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NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
2N5460/5461/5462 2N5460 2N5461 2N5462 - Datasheet Archive
Siliconix PChannel JFETs Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 0.75 to 6 40
2N5460/5461/5462 2N5460/5461/5462 Siliconix PChannel JFETs Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N5460 2N5460 0.75 to 6 40 1 -1 2N5461 2N5461 1 to 7.5 40 1.5 -2 2N5462 2N5462 1.8 to 9 40 2 -4 Features Benefits Applications D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA D Low Signal Loss/System Error D High System Sensitivity D HighQuality LowLevel Signal Amplification D LowCurrent, LowVoltage Amplifiers D HighSide Switching D Ultrahigh Input Impedance PreAmplifiers Description The 2N5460/5461/5462 2N5460/5461/5462 are pchannel JFETs designed to provide allaround performance in a wide range of amplifier and analog switch applications. The TO226AA (TO92) plastic package provides a low cost option, and the series is also available in tapeandreel for automated assembly, (see Packaging Information). TO226AA (TO92) S 1 D 2 G 3 Top View Absolute Maximum Ratings GateDrain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V GateSource Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C P-37410-Rev. B (07/04/94) Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C 1 2N5460/5461/5462 2N5460/5461/5462 Siliconix Specificationsa Limits 2N5460 2N5460 2N5461 2N5461 2N5462 2N5462 Symbol Test Conditions Typb V(BR)GSS IG = 10 mA , VDS = 0 V 55 VGS(off) VDS = -15 V, ID = -1 mA 0.75 6 1 7.5 1.8 9 Saturation Drain Currentc IDSS VDS = -15 V, VGS = 0 V -1 -5 -2 -9 -4 -16 mA Gate Reverse Current IGSS Parameter Min Max Min Max Min Max Unit Static GateSource Breakdown Voltage GateSource Cutoff Voltage Gate Operating Current Drain Cutoff Current VGS = 20 V, VDS = 0 V TA = 100_C 40 V 5 5 5 nA 0.0003 1 1 1 mA IG VDG = -20 V, ID = -0.1 mA 3 ID(off) VDS = -15 V, VGS = 10 V -5 VGS VGS(F) VDS = -15 V 15 1.3 ID = -0.2 mA pA 2.3 ID = -0.4 mA GateSource Forward Voltage 40 0.003 ID = -0.1 mA GateSource V l G S Voltage 40 3.8 IG = -1 mA , VDS = 0 V 0.5 4 0.8 4.5 V 1.5 6 2 6 mS mS -0.7 Dynamic CommonSource Forward Transconductance gfs CommonSource Output Conductance gos CommonSource Input Capacitance Ciss CommonSource Reverse Transfer Capacitance Crss CommonSource Output Capacitance Coss 1 VDS = -15 V, VGS = 0 V , f = 1 kH kHz 1.5 5 75 4.5 VDS = -15 V, VGS = 0 V 15 V f = 1 MHz 4 75 75 7 7 7 1.2 pF F 1.5 2 2 2 Equivalent Input Noise Voltage en VDS = -15 V, VGS = 0 V f = 100 Hz 15 115 115 115 nV/ Hz Noise Figure NF VDS = -15 V, VGS = 0 V f = 100 Hz, RG = 1 MW, BW = 1 Hz 0.2 2.5 2.5 2.5 dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. 2 PSCIB P-37410-Rev. B (07/04/94) 2N5460/5461/5462 2N5460/5461/5462 Siliconix -20 5 gfs -12 IDSS 2.5 -8 -4 0 gfs @ VDS = -15 V, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 10 0 OnResistance and Output Conductance vs. GateSource Cutoff Voltage 1000 800 80 600 400 40 200 0 0 0.2 V 0.4 V 0.6 V -0.8 0.8 V -0.4 4 6 8 10 0 VGS(off) = 3 V I D - Drain Current (mA) I D - Drain Current (mA) 2 Output Characteristics VGS = 0 V -1.2 20 rDS @ ID = -100 mA, VGS = 0 V gos @ VDS = -15 V, VGS = 0 V f = 1 kHz -10 -1.6 gos VGS(off) - GateSource Cutoff Voltage (V) Output Characteristics VGS(off) = 1.5 V 60 rDS VGS(off) - GateSource Cutoff Voltage (V) -2 100 g os - Output Conductance (mS) -16 rDS(on) - DrainSource OnResistance ( W ) Drain Current and Transconductance vs. GateSource Cutoff Voltage g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA) Typical Characteristics -8 -6 VGS = 0 V 0.5 V -4 1.0 V 1.5 V -2 1.0 V 2.0 V 0 0 -4 -8 -12 -16 0 -20 0 -0.4 0.6 V 0.2 V -16 0.8 V -0.2 1.0 V 0.5 V -1.6 1.0 V -1.2 1.5 V -0.8 2.0 V -0.4 -0.1 1.2 V 0 -20 VGS = 0 V VGS(off) = 3 V 0.4 V VGS = 0 V -0.3 -12 Output Characteristics -2 I D - Drain Current (mA) I D - Drain Current (mA) Output Characteristics VGS(off) = 1.5 V -8 VDS - DrainSource Voltage (V) VDS - DrainSource Voltage (V) -0.5 -4 0 -0.2 -0.4 -0.6 -0.8 VDS - DrainSource Voltage (V) P-37410-Rev. B (07/04/94) 2.5 V -1 0 0 -0.2 -0.4 -0.6 -0.8 -1 VDS - DrainSource Voltage (V) 3 2N5460/5461/5462 2N5460/5461/5462 Siliconix Typical Characteristics (Cont'd) Transfer Characteristics -5 VDS = -15 V VGS(off) = 3 V -4 I D - Drain Current (mA) I D - Drain Current (mA) VGS(off) = 1.5 V -3 TA = -55_C -2 Transfer Characteristics -10 25_C -1 -8 -6 TA = -55_C -4 25_C -2 125_C 0 0 125_C 0.4 0.8 1.2 1.6 0 2 0 OnResistance vs. Drain Current 1000 1 3 4 5 Gate Leakage Current 10 nA TA = 25_C -5 mA 1 nA 800 VGS(off) = 1.5 V 600 3V 400 4V 200 0 -0.1 TA = 125_C 100 pA 10 p A -1 TA = 25_C 0.1 pA -10 IGSS @ 25_C 0 -10 TA = -55_C 3 2 25_C 1 125_C 0 0 0.4 0.8 1.2 -30 -40 -50 1.6 VGS - GateSource Voltage (V) Transconductance vs. GateSource Voltage 5 VDS = -15 V f = 1 kHz 4 -20 VDG - DrainGate Voltage (V) g fs - Forward Transconductance (mS) VGS(off) = 1.5 V -0.1 mA -5 mA 1 pA Transconductance vs. GateSource Voltage 5 -1 mA IGSS @ 125_C ID - Drain Current (mA) g fs - Forward Transconductance (mS) 2 VGS - GateSource Voltage (V) I G - Gate Leakage rDS(on) - DrainSource OnResistance ( W ) VGS - GateSource Voltage (V) 4 VDS = -15 V 2 VGS(off) = 3 V 4 VDS = -15 V f = 1 kHz TA = -55_C 25_C 3 2 125_C 1 0 0 1 2 3 4 5 VGS - GateSource Voltage (V) P-37410-Rev. B (07/04/94) 2N5460/5461/5462 2N5460/5461/5462 Siliconix Typical Characteristics (Cont'd) Circuit Voltage Gain vs. Drain Current VGS(off) = 1.5 V 80 AV - Voltage Gain 10 g fs - Forward Transconductance (mS) 100 60 VGS(off) = 3 V 40 20 0 Assume VDD = -15 V, VDS = -5 V gfs RL RL + 10 V AV + ID 1 ) RLgos -0.01 -0.1 VGS(off) = 3 V TA = -55_C 1 25_C 125_C VDS = -15 V f = 1 kHz 0.1 -1 CommonSource Forward Transconductance vs. Drain Current -0.1 -1 -10 CommonSource Input Capacitance vs. GateSource Voltage 10 ID - Drain Current (mA) CommonSource Reverse Feedback Capacitance vs. GateSource Voltage Crss - Reverse Feedback Capacitance (pF) ID - Drain Current (mA) Ciss - Input Capacitance (pF) f = 1 MHz 8 6 4 -5 V 2 0 -15 V 0 4 8 12 16 5 f = 1 MHz 2.5 -5 V -15 V 0 20 0 VGS - GateSource Voltage (V) 100 20 ID = -0.1 mA ID = -1 mA 10 100 1k f - Frequency (Hz) P-37410-Rev. B (07/04/94) 12 16 20 Output Conductance vs. Drain Current VGS(off) = 3 V g os - Output Conductance (mS) en - Noise Voltage (nV / Hz) VDS = -15 V 1 8 VGS - GateSource Voltage (V) Equivalent Input Noise Voltage vs. Frequency 10 4 10 k 100 k 16 TA = -55_C 12 25_C 8 125_C 4 0 -0.1 VDS = -15 V f = 1 kHz -1 -10 ID - Drain Current (mA) 5