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2N5460 Datasheet

Part Manufacturer Description PDF Type
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original
2N5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original
2N5460 InterFET P-Channel silicon junction field-effect transistor Original
2N5460 Motorola CASE 2904, STYLE 7 TO92 (TO226AA) Original
2N5460 On Semiconductor JFET Amplifier P-Channel Original
2N5460 On Semiconductor JFET Amplifier P-Channel - Depletion Original
2N5460 Philips Semiconductors P-Channel JFETS Original
2N5460 Vishay Telefunken TRANS JFET P-CH 5MA 3TO-226AA Original
2N5460 Calogic P-ChanneI JFET Low Noise Amplifier Scan
2N5460 Central Semiconductor FET, P Channel, 0.75 VThreshold Scan
2N5460 Central Semiconductor Low Frequency / Low Noise Amplifiers Scan
2N5460 Intersil Shortform Data Book 1983/4 Scan
2N5460 Intersil Data Book 1981 Scan
2N5460 Motorola The European Selection Data Book 1976 Scan
2N5460 Motorola European Master Selection Guide 1986 Scan
2N5460 Motorola JFET - General Purpose / Amplifiers Scan
2N5460 N/A Semiconductor Master Cross Reference Guide Scan
2N5460 N/A Semiconductor Reference and Application Handbook 1978 Scan
2N5460 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

2N5460

Catalog Datasheet MFG & Type PDF Document Tags

2N5460

Abstract: "P-Channel JFETs" 2N5460/5461/5462 P-channel J-FETs DESCRIPTION P-channel silicon junction field-effect transistor in a , Maximum System (IEC 134) 2N5460/5461/5462 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±Vds drain-source , 2N5460/5461/5462 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS , = 100 °C 1 HA -Idss drain-source leakage current -Vos = 15 V Vgs = 0 2N5460 2N5461 2N5462 1 2 4 5 9 16 mA mA mA Vgs gate-source voltage -Id = 0.1 mA -Vos = 15 V 2N5460 0.5 4 V Vgs gate-source
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OCR Scan
transistor 2N5461 P-Channel JFETs CONFIGURATION 2N5461 jfets Philips MBB 2N5460/5461/5462 LL53131 3TO-92

2N5460

Abstract: 2N5461 ON Semiconductort 2 DRAIN JFET Amplifiers 2N5460 2N5461 2N5462 3 GATE P­Channel - , 2N5460, 2N5461, 2N5462 - - 5.0 nAdc 2N5460, 2N5461, 2N5462 - - 1.0 µAdc , Vdc, VDS = 0, TA = 100°C) 2N5460, 2N5461, 2N5462 IGSS Gate­Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc) 2N5460 2N5461 2N5462 Gate­Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) 2N5460 2N5461 2N5462 © Semiconductor
ON Semiconductor
Original
jfet 2N5461 transistor 2N5461 equivalent 226AA 2N5460/D
Abstract: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461 , 3 source April 1995 822 Preliminary specification Philips Semiconductors 2N5460 , temperature. April 1995 823 Preliminary specification Philips Semiconductors 2N5460/5461/5462 , 1 CONDITIONS PARAMETER gate-source leakage current pA mA mA mA V 2N5460 2N5461 , V gate-source cut-off voltage - I d = 1 pA -V DS = 15 V 2N5460 2N5461 2N5462 0.75 1 -
OCR Scan
MGA004 N5462 N5460

2N5461

Abstract: 2N5462 ON Semiconductort JFET Amplifiers P­Channel - Depletion 2N5460 2N5461 2N5462 MAXIMUM , Components Industries, LLC, 2001 1 March, 2001 ­ Rev. 1 Publication Order Number: 2N5460/D 2N5460 2N5461 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , ) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) - - 0.75 1.0 1.8 0.5 0.8 1.5 - - - - - - - - 5.0 1.0 6.0
ON Semiconductor
Original

2N5460

Abstract: 2N5481 " , 0 ^ A dc. , OS - 0 TEST CONDITIONS 2N5460, 2N5461, 2N5462 2N5463, 2N5464, 2N5465 2N5460, 2N5461, 2N5462i " 2N5460. 2N5463, 2N5460, 2N5463, 2N 5463 2N5464 2N5465 2N5461, 2N5464, 2N 5461, 2N5464 , D lfÜ Ü H ID U 2N5460 - 2N5465 P-Channel JFET PIN CONFIGURATION TO-92 S D G , 60 60 Vdc Vdc mAdc mW m W /°C bC "C U N IT S ORDERING INFORMATION TO-92 2N5460 2N5461 2N5462 2N5463 2N5464 2N5465 WAFER 2N5460/W 2N5481/W 2N5462/W 2N5463/W 2N5464/W 2N5465/W DICE '2N5460/D 2N5461/D
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OCR Scan
2M5462 2N5481 equivalent 2N5462 2N5464 equivalent 2n 5464 2N5460-2N5465 5503B 2N5460/W 2N5462/D 2N5463/D 2N5464/D 2N5465/D

P-Channel JFETs

Abstract: "P-Channel JFETs" Tem ic - _ 2N5460/5461/5462 P-Channel JFETs Product Summary P a rt N um ber 2N5460 2N5461 2N5462 VGS(off) (V) 0.75 to 6 1 to 7.5 1.8 to 9 V(BR)GSS M in (V) 40 40 40 gii, M , Switching · Ultrabigh Input Impedance Pre-Amplifiers Description The 2N5460/5461/5462 are p-channel , 2N5460/5461/5462 Specifications3 L im its 2N5460 P a ra m e te r S tatic Gate-Source Breakdown Voltage , |xs duty cycle s2 % . PSCIB 9-24 P-37410-Rev. B (07/04/94) Tem ic Siliconix 2N5460
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OCR Scan
P-37410--R

2N5462

Abstract: equivalent 2N5462 ON Semiconductort 2N5460 2N5461 2N5462 2 DRAIN JFET Amplifiers P­Channel - Depletion , 40 - - Vdc 2N5460, 2N5461, 2N5462 - - 5.0 nAdc 2N5460, 2N5461, 2N5462 , , ID = 0.4 mAdc) 2N5460, 2N5461, 2N5462 IGSS 2N5460 2N5461 2N5462 VGS(off) VGS 2N5460 , 1.0 kHz) 2N5460 2N5461 2N5462 IDSS ­1.0 ­2.0 ­4.0 - - - ­5.0 ­9.0 ­16 mAdc 2N5460 2N5461 2N5462 yfs 1000 1500 2000 - - - 4000 5000 6000 mmhos
ON Semiconductor
Original
Abstract: Philips Components Data sheet status Preliminary specification date of issue 2N5460/5461 , .1 Symbol. 249 ^ 53 ^ 31 003SaAT 013 Preliminary specification Philips Com ponents 2N5460 , Preliminary specification P-channel J -F E T s 2N5460/546175462 CHARACTERISTICS Tamb = 25 °C unless , . * MAX. UNIT 5 nA 1 VGS = 20 V Vps = 0 HA mA mA mA V 2N5460 2N5461 2N5462 2N5460 1 2 4 0.5 5 9 16 4 - I d = 0.2 mA -V os = 15 V 2N5461 0.8 4.5 V -
OCR Scan
MBB163 S3531 2N5460/546175462 53T31 003SST3

2N5460

Abstract: 7-segment+4+digit+5461 qualification data Product 2N5460 2N5460_D27Z 2N5460_D74Z 2N5460_D75Z 2N5460_L99Z back to top © 2007 Fairchild , ) 2N5460_D27Z Full Production N/A TO-92 3 TAPE REEL 2N5460_D74Z Full Production N/A TO-92 3 AMMO 2N5460_D75Z Full Production N/A TO-92 3 AMMO &3 (3-Digit Date Code) Line 2: 2N Line 3: 5460 2N5460_L99Z Lifetime Buy N/A TO-92 3 BULK Line , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460-5462 350 2.8 125 357
Fairchild Semiconductor
Original
7-segment+4+digit+5461 MMBF5460 MMBF5461 MMBF5462 MMBF5460-5462 2N5460/5461/5462/MMBF5460/5461/5462

2N5462

Abstract: 2n5461 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-G ate , A = 1 0 0 X ) 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 - - 5.0 1.0 nAdc fxAôc Vdc - - Gate So urce Cutoff Voltage (V q s = 15 V d c, Id = 1 .0 /iA d c) v G S Io ff) 2N5460 2N5461 2N5462 VGS 2N5460 2N5461 2 N 5462 0.5 0.8 1.5 - - 0.75 1.0 1.8 - - - 6.0 7.5 9.0 , = 15 V d c ' v g s = o. - 'D S S 2N5460 2N5461 2N5462 - 1 .0 - 2.0 - 4 .0 - - m Adc - 5
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OCR Scan

2N5462

Abstract: MICDNDUCTQR tm MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 ' S Mark: 6 E /6 , 2N5460 625 5.0 83.3 *MMBF5460 350 2.8 200 357 mW mW/°C °C/W °C/W 2N5460 , 9.0 4.0 4.5 6.0 2N5460 2N5461 2N5462 - 1.0 - 2.0 -4.0 - 5.0 - 9.0 - 16 mA mA mA , VG = 20 V, VD = 0, TA = 100°C S S VD = 15 V, lD= 1.0 pA S 2N5460 2N5461 2N5462 VD = 15 V, lD= 0.1 mA 2N5460 S VD = 15 V, lD= 0.2 mA 2N5461 S VD = 15 V, lD= 0.4 mA 2N5462 S nA fa V V
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OCR Scan

2n5461

Abstract: 2n5462 TJ Tstg 3 GATE 1 SOURCE 2N5460 2N5461 2N5462 Value 40 40 10 350 2.8 ­65 to +135 ­65 to , Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) - - 0.75 1.0 1.8 0.5 , Order Number: 2N5460/D 2N5460 2N5461 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS ­1.0 ­2.0 ­4.0 - - - ­5.0 ­9.0 ­16
ON Semiconductor
Original

2N5460

Abstract: 2N5460 MOTOROLA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D J F E T A m p lifiers P-Channel - Depletion 2 DRAIN 2N5460 thru 2N5462 MAXIMUM RATINGS Rating D rain-G ate Voltage , = 30 Vdc. VDS (V q s = 20 Vdc, V q s (VGS = 30 Vdc, V DS V(BR)GSS 2N5460, 2N5461, 2N5462 'GSS = = = = 0) °) 0, TA = 100°C) 0, TA = 100°C) 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 - - 0.75 1.0 1.8 0.5 0.8 1.5 - - - - - - - - 5.0 1.0 6.0 7.5 9.0
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OCR Scan
2N5460 MOTOROLA 2N5461 MOTOROLA

2N5463

Abstract: 2N5463 MOTOROLA MOT OR OL A SC XSTRS/R F 13E D | b3h7S54 GOflbbM? 3 | 2N5460 thru 2N5465 CASE 29-04, STYLE 7 TO-92 (TO-226AA) M A X I M U M R A T IN G S 2N5460 2N5461 2NS462 40 40 10 310 ·2,82 - 6 5 to , , V q s (Vq s = 30 Vdc, V q s V{BR)G SS 2N5460, 2N5461, 2N 5462 2N5463, 2N5464, 2N5465
-
OCR Scan
2N5463 MOTOROLA 2N5465 MOTOROLA 2N546S

2N5462

Abstract: 2N5461 0, f = 100 Hz, BW = 1.0 Hz) ORDERING INFORMATION Device 2N5460 2N5460G 2N5461 2N5461G , 2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features · Pb-Free Packages are , , 2006 March, 2006 - Rev. 5 1 Publication Order Number: 2N5460/D 2N5460, 2N5461, 2N5462 , - Vdc 2N5460, 2N5461, 2N5462 - - 5.0 nAdc 2N5460, 2N5461, 2N5462 - - , , TA = 100°C) (VGS = 30 Vdc, VDS = 0, TA = 100°C) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS Gate
ON Semiconductor
Original
2N5461RLRA 2N5461RLRAG 2N5462G 2N546

n5460

Abstract: N5462 1990 VllOSEti DDbflCHl b'Ji â  PHIN 2N5460/5461/5462 P-channel J-FETs DESCRIPTION P-channel , Semiconductors â  7110flEb 00b60^3 Mb 6 â PHIN Preliminary specification P-channel J-FETs 2N5460/5461/5462 , drain-source leakage current -VDS = 15 V VGs = 0 2N5460 2N5461 2N5462 1 2 4 5 9 16 mA mA mA Vgs gate-source voltage -Id = 0.1 mA -Vds = 15 V 2N5460 0.5 4 V Vgs gate-source voltage -Id = 0.2 mA -Vos = 15 V 2N5461 , cut-off voltage -id = 1 ha -Vos = 15 V 2N5460 2N5461 2N5462 0.75 1 1.8 6 7.5 9 V V V ly-fsl transfer
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OCR Scan
N5460/5461/5462

2n5461

Abstract: 2N5462 2N5460 / 2N5461 I 2N5462 I MMBF5460 I MMBF5461 National S e m i c o n d u c t o r " Discrete POW ER & Signa l Technologies 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 SOT-23 Mark: 6E /61U , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5460 625 5.0 83.3 200 , 0.06 " bSGii3D ocmoRbß mo 7-47 2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461 P-Channel , Gate-Source Voltage VD s = 15 V, lD = 0.1 mA VD s = 15 V, lD = 0.2 mA VD S = 15 V, Id = 0.4 mA 2N5460
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OCR Scan
Low noise audio amplifier 50113D SQ1130 004CH71

2N5461 MOTOROLA

Abstract: 2N5460 MOTOROLA MOTOROLA Order this document by 2N5460/D SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P­Channel - Depletion 2N5460 thru 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating , ) Characteristic Symbol Min Typ Max Unit V(BR)GSS 40 - - Vdc 2N5460, 2N5461, 2N5462 - - 5.0 nAdc 2N5460, 2N5461, 2N5462 - - 1.0 µAdc 0.75 1.0 1.8 , 100°C) 2N5460, 2N5461, 2N5462 IGSS Gate ­ Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc
Motorola
Original
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5460/D JF E T A m p lifie rs , Voltage (V d s = 15 Vdc, I q = 1.0 nAdc) 2N5460, 2N 5461, 2N5462 Ig s s 2N5460, 2N 5461, 2N5462 2N5460, 2N 5461, 2N5462 - - - - 5.0 1.0 nAdc HAdc V(BR)GSS 40 - - Vdc 2N5460 2N5461 2N5462 v GS(off , 0.1 mAdc) (V d s = 15 Vdc, I q = 0.2 mAdc) (V d s = 15 Vdc, I q = 0.4 mAdc) V GS 2N5460 2N5461 , Current (V DS = 15 Vdc, V GS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 Id s s - 1 .0 - 2 .0 - 4 .0 - - -
OCR Scan

2N5465

Abstract: 2N5460-2N5465 C Q IO Q IC CORPORATION P-Channel JFET Low Noise Amplifier 2N5460- 2N5465/ SST5460- SST5465 ABSOLUTE MAXIMUM RATINGS (T a = 25°C unless otherwise specified) Drain-Gate or Source-Gate Voltage 2N5460 , +135°C MARK soo SOI S02 P/N SST5463 SST5464 SST5465 MARK S 03 S04 S05 2N5460-65 Plastic TO , 8-13 2N5460- 2N5465/ SST5460 - SST5465 C O ÌC X fiC CORPORATION V ELECTRICAL CHARACTERISTICS (Continued) (Ta = 25°C unless otherwise specified) SYMBOL PARAMETER 2N5460, 2N5463 9*9 MIN
-
OCR Scan
SST5461 SST5462

5461 AB

Abstract: 2N5460 thru 2N5462* CASE 29-04, STYLE 7 TO-92 (TO-226AA) MAXIMUM RATINGS Rating D rain-G ate Voltage R e v e rse G ate-S ource Voltage F o rw ard G ate Curren t Total D evice D issip a tio n ut T a - 2 5 X Derate ab o ve 2 5 X Ju n c tio n T e m p e ratu re Range S to rag e C han nel T em p , o s = V d c, I q = 1.0 /¿Ade) v G S (o ff) 2 N 5460 2N5461 2 N 5462 VGS 2N5460 2N5461 2N5462 0.5 , m Adc 5.0 - 9.0 -1 6 - ¡Yfsl 2N5460 2N5461 2N5462 Ivoal C is s C rs s 1000 1500 2000 - - -
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OCR Scan
5461 AB

2N5461

Abstract: 5461 AS 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 , " X 0.06." 2001 Fairchild Semiconductor Corporation 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier (continued , % 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier (continued , 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier (continued
Fairchild Semiconductor
Original
5461 AS MMBF5462 61V
Abstract: - 1.0 2.5 dB Motorola Small-Signal Transistors, FETs and Diodes Device Data 4-113 2N5460 , 4-114 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5460 2N5461 2N5462 ( k -
OCR Scan
Abstract: " X 0.06." ©2001 Fairchild Semiconductor Corporation 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 MMBF5460 MMBF5461 MMBF5462 2N5460 2N5461 , % 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier 5 , . Temperature 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 / MMBF5462 P-Channel General Purpose Amplifier , Conductance vs. Drain Current Noise Voltage vs. Frequency Capacitance vs. Voltage 2N5460 / 5461 Fairchild Semiconductor
Original
Showing first 20 results.