NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N5415S | Microsemi Corporation | PNP Low Power Silicon Transistor |
2 pages, |
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| 2N5415S | Motorola / Freescale Semiconductor | Power Transistor Selection Guide |
6 pages, |
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| 2N5415S | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
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| 2N5415S | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2N5415S | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| 2N5415S | N/A | Shortform Transistor Datasheet Guide |
1 pages, |
Scan | |
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| 2N5415S | SGS-Ates | Semiconductor Data Book 1976/77 |
2 pages, |
Scan | |
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| 2N5415S | SGS-Ates | Small Signal Transistors 3rd Edition 1978 |
2 pages, |
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| 2N5415S | STMicroelectronics | HIGH-VOLTAGE AMPLIFIER |
4 pages, |
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| 2N5415S | N/A | Cross Reference Datasheet |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier , /4 2N5415S THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , MHz 15 pF 2N5415S TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. , D A G I E F H B L P008B P008B 3/4 2N5415S Information furnished is ... | Original |
4 pages, |
2N5415S P008B 2N5415S abstract |
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| Abstract: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416 2N5416S 2N5416S MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range 2N5415 2N5415 , 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 Unit C/W 0 2N5415S, 2N5416S 2N5416S ... | Original |
2 pages, |
transistor 2N5415 2N5415S 2N5416S 2N5416 2N5415 MIL-PRF-19500/485 MIL-PRF-19500/485 abstract |
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| Abstract: INCH-POUND MIL-S-19500/485E MIL-S-19500/485E 18 Aprit 1995 SUPERSEDING MIL-S-19500/485D MIL-S-19500/485D 15 November 1994 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOU-POWER TYPES: 2N5415 2N5415, 2N5415S, 2N5416 2N5416, AND , and 1.75 inches (44.45 mm) maximum. 13. For transistor types 2N5415S and 2N5416S 2N5416S, dimension LL shall , TO 300 V. 100 mA FOR 2N5415.S) 100 mA FOR 2N5416 2N5416.SI (SEE NOTE 1) HEWLETT-PACKARD OSCILLOSCOPE MOOEL , SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POUER, TYPES: 2N5415 2N5415, 2N5415S, 2N5416 2N5416, AND 2N5416S 2N5416S JAN ... | OCR Scan |
15 pages, |
MIL-S-19500/485E MIL-S-19500/485D 2N5415 2N5415S 2N5416 2N5416S MIL-S-19500 MIL-S-19500/485E abstract |
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| Abstract: TOн18 30 10 30 BF257 BF257 2N5415S BF259 BF259 1 2.5 1 30/6 50/5 30/6 90 typ. 15 90 typ. ... | Original |
6 pages, |
sot-23 2N2222A 2N2219 2N2219A 2N2222 2N2222A 2n2222a SOT223 2N2907 SOT-23 2N3700 2N720A 2N1613 BSX33 BFY51 BFY50 BC141 datasheet abstract |
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| Abstract: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415 2N5415, 2N5415S, 2N5415UA 2N5415UA, 2N5415U4 2N5415U4, 2N5416 2N5416, 2N5416S 2N5416S, 2N5416UA 2N5416UA, AND 2N5416U4 2N5416U4 , ) maximum. 12. For transistor types 2N5415S and 2N5416S 2N5416S, dimension LL shall be .5 inch (12.7 mm) minimum and ... | Original |
29 pages, |
2N5416U4 2N5416S 2N5415S 2N5415 JANTXV 2N5415 2N54115 2N5416 2N5415UA 2N5416UA MIL-PRF-19500/485M MIL-PRF-19500/485L 2N5415U4 MIL-PRF-19500 MIL-PRF-19500/485M abstract |
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| Abstract: 50 5 2N3743 2N3743 300 50 50/200 30 1.2 30 3 2N4931 2N4931 250 50 50/200 30 1.2 30 3 2N5415S 200 1000 ... | OCR Scan |
6 pages, |
2N6671 2N6673 2N2905A MOTOROLA 2N3715 MOTOROLA 2N3819 motorola transistor 2N2907A 2n3819 replacement 2N914 JAN 2N5794 2N3741 MOTOROLA JTX 2N3500 2N6385 2N6541 2N2222, 2N2222A MIL-STD-19500 MIL-STD-19500 abstract |
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| Abstract: a8t3571 2N5455 V CE: Case Style: STI Type: 2N5415S Notes: *BVCEO Polarity: PNP Power Dissipation: 10 VCBO , : 15 Case Style: TO-205AD/TO-39 Industry Type: 2N5415S STI Type: 40412L 40412L Notes: Polarity: NPN ... | Original |
75 pages, |
40328 40347 To-206AF A5T4029 40519 40481 40348 DATA SHEET transistor 40411 40408 transistor 40375 40538 2SK989 hfe max 200 40361 2N3389 2N3389 2N3389 abstract |
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| Abstract: 2N 5415S 5415S SILICON PLANAR PNP HIGH-VOLTAGE AMPLIFIER The 2N 5415S 5415S is a silicon planar epitaxial PNP transistor in JedecTO-39 metal case, intended for high voltage switching and linear amplifier applications. The complementary NPN type is 2N 3440S 3440S. ABSOLUTE MAXIMUM RATINGS vcbo Collector-base voltage (lE =0) -200 v vceo Collector-emitter voltage (lB = 0) -200 v Vebo Emitter-base voltage (lc = 0) -4 v I CM Collector peak current -1 a ptot Total power dissipation at Tamb< 25°C 1 W at Tcase ... | OCR Scan |
2 pages, |
5415S 3440S 5415S abstract |
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| Abstract: 2N 5415S 5415S S|L|C0N pLANAR pNp HIGH-VOLTAGE AMPLIFIER The 2N 5415S 5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high voltage switching and linear amplifier applications. The complementary NPN type is 2N 3440S 3440S. ABSOLUTE MAXIMUM RATINGS VCBO Collector-base voltage (lE := 0) -200 V VCEO Collector-emitter voltage (tB = 0) -200 V VEBO Emitter-base voltage (lc = 0) -4 V IcM Collector peak current -1 A Ptot Total power dissipation at Tamb< 25°C 1 W at Tcas ... | OCR Scan |
2 pages, |
5415S 3440S 5415S abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| -VOLTAGE AMPLIFIER 2N5415S Document Format Size Document Number Date Update Raw Text Format 2N5415S October 1988 HIGH-VOLTAGE AMPLIFIER The 2N5415S is a Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 5 C/W 5 C/W 2N5415S 2/4 DIM DATA P008B P008B P008B P008B 2N5415S 3/4 Information furnished is believed to be accurate and reliable. However, SGS - Thailand - United Kingdom - U.S.A 2N5415S 4/4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5305.htm |
STMicroelectronics | 20/10/2000 | 5.74 Kb | HTM | 5305.htm |
| ST | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER Document Number following formats: Portable Document Format and Raw Text Format 2N5415S October 1988 HIGH-VOLTAGE AMPLIFIER The 2N5415S is a silicon planar epitaxial PNP tran- sistor in Jedec TO-39 metal case, intended for -case Thermal Resistance Junction-ambient Max Max 17.5 175 5 C/W 5 C/W 2N5415S 2/4 DIM. mm inch MIN. TYP. MAX .047 I 0.9 0.035 L 45 o (typ.) L G I D A F E B H TO39 MECHANICAL DATA P008B P008B P008B P008B 2N5415S 3/4 Information www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5305-v1.htm |
STMicroelectronics | 02/04/1999 | 3.74 Kb | HTM | 5305-v1.htm |
| HIGH-VOLTAGE AMPLIFIER 2N5415S Document Format Size 5415S October 1988 HIGH-VOLTAGE AMPLIFIER The 2N5415S is a silicon planar epitaxial PNP tran -case Thermal Resistance Junction-ambient Max Max 17.5 175 5 C/W 5 C/W 2N5415S 2/4 DIM. mm H TO39 MECHANICAL DATA P008B P008B P008B P008B 2N5415S 3/4 Information furnished is believed to be accurate Kingdom - U.S.A 2N5415S 4/4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5305-v3.htm |
STMicroelectronics | 25/05/2000 | 5.51 Kb | HTM | 5305-v3.htm |
| ST | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER Document Number following formats: Portable Document Format and Raw Text Format 2N5415S October 1988 HIGH-VOLTAGE AMPLIFIER The 2N5415S is a silicon planar epitaxial PNP tran- sistor in Jedec TO-39 metal case, intended for -case Thermal Resistance Junction-ambient Max Max 17.5 175 5 C/W 5 C/W 2N5415S 2/4 DIM. mm inch MIN. TYP. MAX .047 I 0.9 0.035 L 45 o (typ.) L G I D A F E B H TO39 MECHANICAL DATA P008B P008B P008B P008B 2N5415S 3/4 Information www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5305-v2.htm |
STMicroelectronics | 14/06/1999 | 3.7 Kb | HTM | 5305-v2.htm |
| ST | HIGH-VOLTAGE AMPLIFIER Datasheet HIGH-VOLTAGE AMPLIFIER 2N5415S Document Format Size Document Number Date Update Pages Portable Document Format 5305 14/10/1997 4 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/5305.htm |
STMicroelectronics | 25/05/2000 | 2.77 Kb | HTM | 5305.htm |
| SGS-THOMSON | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER Document Number: 5305 Date Update: 14/10/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5305.htm |
STMicroelectronics | 06/02/1998 | 0.89 Kb | HTM | 5305.htm |
| ST | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER Document Number: 5305 Date Update: 14/10/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5305-v2.htm |
STMicroelectronics | 14/06/1999 | 0.84 Kb | HTM | 5305-v2.htm |
| ST | HIGH-VOLTAGE AMPLIFIER 2N5415S HIGH-VOLTAGE AMPLIFIER Document Number: 5305 Date Update: 14/10/97 Pages: 4 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5305-v1.htm |
STMicroelectronics | 31/03/1999 | 0.86 Kb | HTM | 5305-v1.htm |
| ST | HIGH-VOLTAGE AMPLIFIER Datasheet HIGH-VOLTAGE AMPLIFIER 2N5415S Document Format Size Document Number Date Update Pages Portable Document Format 5305 14/10/1997 4 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/5305-v3.htm |
STMicroelectronics | 25/05/2000 | 2.72 Kb | HTM | 5305-v3.htm |
| STD 10 1 200 200 4 JANS 2N5415S PPC PNP TO-39 STD 10 1 200 200 4 www.datasheetarchive.com/files/microsemi/products/pnp/60_200.htm |
Microsemi | 04/01/1999 | 5.03 Kb | HTM | 60_200.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N5415(S) | N/A | Silicon PNP | |
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| 2N5415S | N/A | RME | |
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| 2N5415S+JAN | Defense Supply Center Columbus | Si PNP Power BJT | |
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| 2N5415S+JANTX | Defense Supply Center Columbus | Si PNP Power BJT | |
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| 2N5415S+JANTXV | Defense Supply Center Columbus | Si PNP Power BJT | |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |