Datasheet Search Results			1 - 50 of about 91 for 2N5401
	2N5401	AUK Corp.	PNP Silicon Transistor (General purpose amplifier High voltage application)	198.97 Kb,  3 Pages.
	2N5401	Boca Semiconductor	Amplifier Transistor PNP Silicon	141.38 Kb,  5 Pages.
	2N5401	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	57.81 Kb,  1 Pages.
	2N5401	Continental Device India Limited	Semiconductor Device Data Book 1996	103.54 Kb,  1 Pages.
	2N5401	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb,  36 Pages.
	2N5401	Diodes, Inc.	PNP GENERAL PURPOSE AMPLIFIER	58.26 Kb,  2 Pages.
	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	36.42 Kb,  4 Pages.
	2N5401	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	37.24 Kb,  1 Pages.
	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	108.83 Kb,  4 Pages.
	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	466.3 Kb,  12 Pages.
	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	68.85 Kb,  5 Pages.
	2N5401	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	45.62 Kb,  1 Pages.
	2N5401	Honey Technology	150 V, PNP silicon expitaxial planar transistor	123.19 Kb,  2 Pages.
	2N5401	Korea Electronics	TRANS GP BJT PNP 150V 0.6A 3TO-92	65.28 Kb,  2 Pages.
	2N5401	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	141.07 Kb,  2 Pages.
	2N5401	Korea Electronics	High Voltage Transistor	152.18 Kb,  2 Pages.
	2N5401	Korea Electronics	V(ceo): 40V I(c): 200mA P(c): 625mW NPN Silicon Transistor	495.64 Kb,  5 Pages.
	2N5401	Micro Commercial Components	TRANS GP BJT PNP 150V 0.6A 3TO-92	679.83 Kb,  4 Pages.
	2N5401	Micro Electronics	Semiconductor Device Data Book	55.26 Kb,  1 Pages.
	2N5401	Micro Electronics	Semiconductor Devices	49.59 Kb,  1 Pages.
	2N5401	Micro Electronics	High Voltage Transistors	102.75 Kb,  1 Pages.
	2N5401	Micro Electronics	SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	165.68 Kb,  2 Pages.
	2N5401	Motorola	European Master Selection Guide 1986	51.87 Kb,  1 Pages.
	2N5401	Motorola	The European Selection Data Book 1976	67.85 Kb,  2 Pages.
	2N5401	National Semiconductor	General Purpose Amplifiers and Switches	320.12 Kb,  10 Pages.
	2N5401	National Semiconductor	PNP General Purpose Amplifiers and Switches	35.68 Kb,  1 Pages.
	2N5401	National Semiconductor	High Voltage Amplifier	67.3 Kb,  1 Pages.
	2N5401	National Semiconductor	PNP Transistor	416.99 Kb,  11 Pages.
	2N5401	National Semiconductor	PNP General Purpose Amplifier	111.92 Kb,  4 Pages.
	2N5401	On Semiconductor	Amplifier Transistor (PNP Silicon)	176.29 Kb,  6 Pages.
	2N5401	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.29 Kb,  1 Pages.
	2N5401	Philips Semiconductors / NXP Semiconductors	PNP high-voltage transistor	43.97 Kb,  8 Pages.
	2N5401	Philips Semiconductors / NXP Semiconductors	Silicon PNP High Voltage Transistor	55.56 Kb,  3 Pages.
	2N5401	ROHM Electronics	General Purpose Bipolar Transistor, PNP, 150V, TO-92, 3-Pin	80.59 Kb,  2 Pages.
	2N5401	Samsung Electronics	PNP EPITAXIAL SILICON TRANSISTOR	77.31 Kb,  2 Pages.
	2N5401	Samsung Electronics	PNP EPITAXIAL SILICON TRANSISTOR	72.34 Kb,  2 Pages.
	2N5401	Semiconductors, Inc.	High Voltage Transistors	282.75 Kb,  4 Pages.
	2N5401	Semtech	PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications	123.19 Kb,  2 Pages.
	2N5401	Sinyork Co., Ltd.	Mini size of Discrete semiconductor elements	494.27 Kb,  15 Pages.
	2N5401	Sprague	Small Signal TO-92 Plastic Transistors	370.91 Kb,  5 Pages.
	2N5401	Thomson-CSF	Condensed Data Book 1977	34.63 Kb,  1 Pages.
	2N5401	Thomson-CSF	Shortform Semiconductor Catalogue 1982	229.31 Kb,  2 Pages.
	2N5401	Transys Electronics	Plastic-Encapsulated Transistors	63.17 Kb,  2 Pages.
	2N5401	Usha Ltd.	Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW.	75.64 Kb,  2 Pages.
	2N5401	Various Russian Datasheets	Transistor	82.42 Kb,  8 Pages.
	2N5401	Vishay	PNP GENERAL PURPOSE TRANSISTOR	80.24 Kb,  2 Pages.
	2N5401	Weitron Technology	PNP Transistors	663.45 Kb,  4 Pages.
	2N5401	Zetex Semiconductors	Quick Reference Guide (Discrete Semiconductors) 1991	51.98 Kb,  1 Pages.
	2N5401	N/A	Shortform Transistor Datasheet Guide	90.39 Kb,  1 Pages.
	2N5401	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	98.44 Kb,  1 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 298 for 2N5401
	First line: 5401 equivalent of 5401 transistor in 5401 diode in 5401 MARKING SPECIFICATION 2N5401 TO-92 PACKAGE Abstract: .. SEMICONDUCTOR 2N5401. 5401. 3 K 816. 2N 1. 2. 4. 1998. 6. 23 1/1. MARKING SPECIFICATION TO-92 TO-92 PACKAGE ..  Tags: equivalent of 5401 transistor data 2n5401 transistor 2N5401  transistor 2N 5401  diode in 5401  diode 2N5401  5401  2n5401 transistor  2N5401   2N5401	22.94 Kb	1 Pages	Original
	First line: 2N5400 2N5401 2N5400 2N5401 Version 2006-06-17 Power dissipation Verlustleistung Abstract: .. 2N5400 2N5400 / 2N5401 PNP General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP Version 2006-06-17 Dimensions - Maße [mm] Power ..  Tags: 2N5401   2N5400 2N5401	102.95 Kb	2 Pages	Original
	First line: diode 2N5401� 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Abstract: .. ST 2N5400 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are ..  Tags: diode 2N5401Â transistor 2N5401  diode 2N5401  2N5401   2N5400 2N5401 2N5550 2N5551	240.31 Kb	3 Pages	Original
	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are ..  Tags: transistor 2N5401  diode 2N5401  2N5401   2N5400 2N5401 2N5550 2N5551	272.72 Kb	3 Pages	Original
	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are ..  Tags: diode 2N5401  2n5401 transistor  2N5401   2N5400 2N5401 2N5550 2N5551	311.39 Kb	3 Pages	Original
	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose, high voltage amplifier applications. complementary types transistors 2N5550 2N5551 recommended. special request, these transistors manufactured different configurations. Absolute Maximum Ratings 25oC) Symbol Collector Emitter Voltag Abstract: .. ST 2N5400 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 2N5550 and ST 2N5551 2N5551 are ..  Tags: diode 2N5401  2N5401   2N5400 2N5401 2N5550 2N5551	197.34 Kb	3 Pages	Original
	First line: 2N5400 MOTOROLA 2N5401 Amplifier Transistors N5400 2N5401* Motorola Preferred Device COLLECTOR Boca Semiconductor Corp. (BSC) EMITTER Abstract: .. Amplifier Transistors PNP Silicon 2 N5400 N5400 2N5401* * Motorola Preferred Device COLLECTOR Boca Semiconductor Corp. BSC BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N5400 2N5400 2N5401 Unit Collector ..  Tags: 2N5401 2N5400 MOTOROLA   datasheet abstract..	159.93 Kb	5 Pages	OCR Scan
	First line: transistor 2N5401 2N5401 Transistors TO-92 EMITTER BASE COLLECTOR Abstract: .. 2N5401. WEITRON http://www.weitron.com.tw. IC= -1.0/1.0 mAdc, VCE=-5.0 Vdc IC= -10 mAdc, VCE= -5.0 Vdc 80 - 1 2 hFE 3 80. -0.5. -1.0. - Classification of hFE 2 Rank A B C. Range 80-160 120 ..  Tags: transistor 2N5401 2n5401   2N5401	663.45 Kb	4 Pages	Original
	First line: 2N5401 Silicon Transistor Abstract: .. 2N5401 PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V -160V , VCEO = -150V -150V • Low collector ..  Tags: 2N5401   2N5401	198.97 Kb	3 Pages	Original
	First line: data 2n5401 AUER PHLPS/DSCRETE bbS3T31 DaSfilb7 2N5401 SLCON P-N-P HGH-VOLTAGE TRANSSTORS P-N-P high-voltage small-signal transistors general purposes especially telephony applications encapsulated TO-92 envelope. N-P-N complements 2N5550 2N5551. QUCK REFERENCE DATA 2N5400 2N5401 Abstract: .. N AUER PHILIPS/DISCRETE bRE D bbS3T31 bbS3T31 DaSfilb7 "ÃŒST ' �NÖ4UU 2N5401 I IAPX SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage small-signal transistors for general purposes and ..  Tags: data 2n5401   datasheet abstract..	74.14 Kb	3 Pages	OCR Scan
	First line: 2N5401 2N5401 Silicon Transistor Abstract: .. 2N5401 2N5401 TO-92 TO-92 . Outline Dimensions unit : mm. S Se em mi ic co on nd du uc ct to or r. PIN Connections 1. Emitter 2. Base 3. Collector. 1 2 3. KST-9040-001 KST-9040-001 2. 2N5401 Absolute maximum ratings Ta=25 �C Characteristic ..  Tags: 2N5401   2N5401	237.57 Kb	4 Pages	Original
	First line: Small Signal Transistor High Voltage Transistor Chip CP716 Abstract: .. 2N5401. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad ..  Tags: diode 2N5401  2N5401 die  2N5401   CP716	208.14 Kb	2 Pages	Original
	First line: Amplifier Transistors Abstract: .. Amplifier Transistors PNP Silicon. MAXIMUM RATINGS. Rating Symbol 2N5400 2N5400 2N5401 Unit. Collector‐Emitter Voltage VCEO 120 150 Vdc. Collector‐Base Voltage VCBO 130 160 Vdc. Emitter‐Base Voltage ..  Tags: diode 2N5401  2N5401   datasheet abstract..	67.14 Kb	8 Pages	Original
	First line: 2N5401 2N5401 FEATURE Power dissipation TRANSISTOR (PNP) Abstract: .. 2N5401 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W Tamb=25 �C Collector current ICM : - 0.6 A Collector-base voltage V BR CBO : -160 V Operating and storage junction temperature ..  Tags:   2N5401	113.42 Kb	1 Pages	Original
	First line: transistor 2N5401 2N5401 GENERAL PURPOSE TRANSISTOR BOTTOM VIEW TO-92 4.32 4.83 4.32 4.78 12.50 15.62 Abstract: .. 2N5401 PNP GENERAL PURPOSE TRANSISTOR hEH hH BOTTOM C B E\ VIEW TO-92 TO-92 Dim Min Max A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 D 0.36 0.56 E 3.15 3.94 G 2.29 2.79 H 1.14 1.40 All Dimensions in mm VISHAY /LITEMSI ..  Tags: transistor 2N5401   datasheet abstract..	98.76 Kb	2 Pages	OCR Scan
	First line: 2N5401 Small-signal Transistors LEADED DEVICES (continued) HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER 2N5550 2N5551 BF420L BF422L MPSA42 MPSA43 MPSA44 MPSA45 PN3439 PN3440 PACKAGE TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 VCEO max. max. (mA) Ptot max. (mW) min. max. min. (MHz) Abstract: .. 2N5551 2N5551 TO-92 TO-92 160 300 630 80 >80 100 2N5401 184. BF420L BF420L TO-92 TO-92 300 50 625 50 >50 60 BF421L BF421L 536. BF422L BF422L TO-92 TO-92 250 50 625 50 >50 60 BF423L BF423L 536. MPSA42 MPSA42 TO-92 TO-92 300 100 500 40 >40 50 MPSA92 MPSA92 822. MPSA43 MPSA43 TO-92 TO-92 200 100 500 ..  Tags: MPSA93  MPSA42  diode 2N5401  630-60  2N5551  2N5401   2N5550 2N5551	4.27 Kb	1 Pages	Original
	First line: TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) Abstract: .. 2N5401 TRANSISTOR PNP FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current max. 600mA 600mA z High voltage max.160v 160v MAXIMUM RATINGS TA ..  Tags:   2N5401	141.16 Kb	2 Pages	Original
	First line: 2N5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: (max)=625mW Abstract: .. 2N5401 PNP EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 150V 150V • Collector Dissipation: PC max =625mW 625mW . ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL ..  Tags: diode 2N5401  2n5401 transistor  2N5401   2N5401	51.81 Kb	2 Pages	Original
	First line: 2N5401 2N5401 Amplifier Transistors Abstract: .. 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features ∞ Pb-Free Packages are Available* MAXIMUM RATINGS. Rating Symbol 2N5400 2N5400 2N5401 Unit. Collector - Emitter Voltage VCEO 120 ..  Tags: diode 2N5401  2N5401   2N5401	69.43 Kb	6 Pages	Original
	First line: transistor 2N 5551 2N5400 2N540 2N5550 2N555 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 2N5400, 2N540 (PNP) 2N5550, 2N555 (NPN) COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER SWITCHING APPLICATIONS. CASE TO-92A ABSOLUTE MAXIMUM Abstract: .. 2N5400 2N5400 2N5401 2N5550 2N5550 2N5551 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 THE 2N5400 2N5400 , 2N5401 PNP AND 2N5550 2N5550 , 2N5551 2N5551 NPN ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL ..  Tags: transistor 2N 5551   datasheet abstract..	184.18 Kb	2 Pages	OCR Scan
	First line: book, halfpage M3D186 Abstract: .. 2N5400 2N5400 ; 2N5401 PNP high-voltage transistors book, halfpage M3D186 M3D186 1997 May 22 2 Philips Semiconductors Product specification PNP high-voltage transistors 2N5400 2N5400 ; 2N5401 FEATURES ..  Tags: 2n5401 transistor  2N5401   datasheet abstract..	66.13 Kb	8 Pages	Original
	First line: UNISONIC TECHNOLOGIES CO., 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR Collector-emitter voltage: VCEO -150V High current gain Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N5401 PNP SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright � 2005 Unisonic Technologies Co., Ltd QW-R201-001 QW-R201-001 ,D . HIGH VOLTAGE SWITCHING TRANSISTOR ..  Tags: transistor 2N5401  diode 2N5401  2N5401-X-AB3-R  2N5401   2N5401	48.81 Kb	4 Pages	Original
	First line: diode 2N5401 2N5400, 2N5401 Amplifier Transistors Abstract: .. 2N5400 2N5400 , 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol 2N5400 2N5400 2N5401 Unit. Collector Emitter Voltage ..  Tags: diode 2N5401  2N5401   2N5400 2N5401	79.83 Kb	6 Pages	Original
	First line: 25401 25401 MMBT5401 Abstract: .. 2N5401 / MMBT5401 MMBT5401 . NDiscrete POWER & SignalTechnologies. PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages ..  Tags: 2N5401 SOT-23 mark 2L SOT-23  diode 2N5401  2N5401   2N5401	64.2 Kb	4 Pages	Original
	First line: 2N5401 SOT-23 2N5401 MMBT5401 2N5401 MMBT5401 Abstract: .. 2N5401 / MMBT5401 MMBT5401 . PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. MMBT5401 MMBT5401 ..  Tags: 2N5401 SOT-23 pnp general purpose amplifier  mark 2L SOT-23  2N5401   2N5401	102.47 Kb	4 Pages	Original
	First line: 25401 MMBT5401 25401 Abstract: .. MMBT5401 MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES ..  Tags: pnp general purpose amplifier  mark 2L SOT-23  diode 2N5401  2N5401   2N5401	116.41 Kb	4 Pages	Original
	First line: Order this document 2N5400/D Amplifier Transistors Abstract: .. Rating Symbol 2N5400 2N5400 2N5401 Unit. Collector ‐ Emitter Voltage VCEO 120 150 Vdc. Collector ‐ Base Voltage VCBO 130 160 Vdc. Emitter ‐ Base Voltage VEBO 5.0 Vdc. Collector Current — Continuous IC 600 mAdc ..  Tags: transistor 2N5401  diode 2N5401  2N5401 MOTOROLA  2N5401  2N5400 MOTOROLA  2n5400   2N5400	176.3 Kb	6 Pages	Original
	First line: 2N5401 MMBT5401 2N5401 MMBT5401 Abstract: .. MMBT5401 MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25 �C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol ..  Tags: 2N5401   2N5401	68.86 Kb	5 Pages	Original
	First line: 2N5401 Silicon Amplifier Transistor 625mW )HDWXUHV Abstract: .. Through Hole Package 150oC 150oC Junction Temperature. Case: TO-92 TO-92 , Molded Plastic. Marking: 2N5401. Charateristic Symbol Value Unit. Collector-Emitter Voltage VCEO 150 V. Collector-Base Voltage ..  Tags: 2N5401   2N5401	650.45 Kb	4 Pages	Original
	First line: )HDWXUHV omponents 20736 Marilla Street Chatsworth Abstract: .. Through Hole Package 150oC 150oC Junction Temperature. Case: TO-92 TO-92 , Molded Plastic. Marking: 2N5401. Charateristic Symbol Value Unit. Collector-Emitter Voltage VCEO 150 V. Collector-Base Voltage ..  Tags: 2N5401   datasheet abstract..	679.85 Kb	4 Pages	Original
	First line: book, halfpage M3D186 Abstract: .. 2N5401 PNP high-voltage transistor book, halfpage M3D186 M3D186 2004 Oct 28 2 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES • Low current max ..  Tags: 2N5401   datasheet abstract..	46.35 Kb	6 Pages	Original
	First line: GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. Abstract: .. 2N5401. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=-120V -120V , IE=0 - - -50 nA. VCB=-120V -120V , IE=0, Ta ..  Tags: 2N5401   2N5401	65.26 Kb	2 Pages	Original
	First line: 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR Abstract: .. UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-001 QW-R201-001 ,A HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V -150V *Collector ..  Tags: 2N5401   2N5401	44.2 Kb	2 Pages	Original
	First line: 2N5401 TO-92 Plastic-Encapsulate Transistors Transistor(PNP) FEATURE Power dissipation :0.625 (Tamb=25 Collector current :-0.6 Collector-base voltage (BR)CBO :-160 Operating storage junction temperature range :-55 +150 TO-92 Abstract: .. TO-92 TO-92 Plastic-Encapsulate Transistors Transistor PNP 2N5401. FEATURE. Power dissipation P :0.625 W Tamb=25 C Collector current I :-0.6 A. Collector-base voltage V :-160 V. Operating and storage ..  Tags: 2N5401   2N5401	167.73 Kb	2 Pages	Original
	First line: 2N5401 RoHS Compliant Product suffix "-C" specifies halogen lead-free -0.6 -160 Plastic Encapsulated Transistor Abstract: .. Elektronische Bauelemente. 2N5401 -0.6 A, -160 V. PNP Plastic Encapsulated Transistor. 4-Feb-2010 4-Feb-2010 Rev. B Page 1 of 2. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed ..  Tags:   2N5401	337.15 Kb	2 Pages	Original
	First line: General Purpose Amplifier FEATURES High Collector Breakdown Voltage; Noise; Complementary 2N5401 This device designed general purpose amplifier switch applications requiring high voltages. Abstract: .. Æ High Collector Breakdown Voltage; Low Noise; Æ Complementary to 2N5401 Æ This device is designed as a general purpose amplifier and switch for applications requiring high voltages. TO – 92 ..  Tags: diode 2N5401  2N5551  2N5401   2N5401	20.63 Kb	1 Pages	Original
	First line: 2N5401 GENERAL PURPOSE TRANSISTOR BOTTOM VIEW TO-92 4.32 4.83 4.32 4.78 12.50 15.62 0.36 0.56 Abstract: .. 2N5401 PNP GENERAL PURPOSE TRANSISTOR BOTTOM fC B E Ã VIEW TO-92 TO-92 Dim Min Max A 4.32 4.83 B 4.32 4.78 C 12.50 15.62 D 0.36 0.56 E 3.15 3.94 G 2.29 2.79 H 1.14 1.40 All Dimensions in mm VISHAY LITEMZI POWER ..  Tags:   datasheet abstract..	59.62 Kb	1 Pages	OCR Scan
	First line: 2N5401 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEo =150V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Coilector-Base Voltage VcBO -160 Collector-Emitter Voltage VcEO -150 Emitter-Base Voltage Vebo Abstract: .. 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †� Collector-Emitter Voltage: VCEo =150V 150V †� Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 �C Characteristic ..  Tags:   datasheet abstract..	90.87 Kb	2 Pages	OCR Scan
	First line: TO-92 Plastic-Encapsulate Transistors 2N5401 FEATURE Power dissipation Abstract: .. 2N5401 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W Tamb=25 �C Collector current ICM : - 0.6 A Collector-base voltage V BR CBO : -160 V Operating and storage junction ..  Tags: 2N5401   2N5401	38.07 Kb	2 Pages	Original
	First line: SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N5401 EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage VCbo=-160V, VCeo=-150V Leakage Current. Abstract: .. _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES * High Collector Breakdwon ..  Tags:   datasheet abstract..	160.15 Kb	2 Pages	OCR Scan
	First line: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. High Collector Breakdwon Voltage Vcbo=-160V, VCEo=-150V Leakage Current. Icbo=-50nA(Max.), @VCb="120V Saturation Voltage Abstract: .. KEC SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES †� High Collector Breakdwon Voltage : Vcbo=-160V -160V ..  Tags:   datasheet abstract..	171.16 Kb	2 Pages	OCR Scan
	First line: SAMSUNG SEMICONDUCTOR 0007185 2N5401 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vcco-160V Collector ABSOLUTE MAXIMUM Characteristic Symbol Rating Unit Collector-Base Voltage VcsO Collector-Emitter Voltage Abstract: .. SAMSUNG SEMICONDUCTOR INC 14E D | 0007185 7 | 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †� Collector-Emitter Voltage: Vcco-160V Vcco-160V †� Collector Di �sipatlon:Pc m �x =825mW 825mW ..  Tags:   datasheet abstract..	95.79 Kb	2 Pages	OCR Scan
	First line: 2N5401 2N5401 Amplifier Transistor Collector-Emitter Voltage: VCEO= 150V Collector Dissipation: (max)=625mW Suffix "-C" means Conter Collector Emitter Collector Base) Abstract: .. �2004 Fairchild Semiconductor Corporation Rev. B, May 2004. 2N5401. PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 �C unless otherwise noted. Electrical Characteristics Ta ..  Tags: diode 2N5401  2N5401   2N5401	36.42 Kb	4 Pages	Original
	First line: TO-92 Plastic-Encapsulated Transistors Abstract: .. TO-92 TO-92 Plastic-Encapsulated Transistors 2N5401 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W Tamb=25 �C Collector current ICM : - 0.6 A Collector-base voltage V BR CBO ..  Tags: 2N5401   datasheet abstract..	63.17 Kb	2 Pages	Original
	First line: book, halfpage M3D186 Abstract: .. 2N5401 PNP high-voltage transistor book, halfpage M3D186 M3D186 1999 Apr 08 2 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES • Low current max ..  Tags: 2N5401   datasheet abstract..	46.75 Kb	8 Pages	Original
	First line: 2n5401 2n3906 bc557 cross reference BC517 "cross reference" MPSa06 equivalent 2n5401 2n3904 Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER 2N2925 2N3903 2N3904 2N3904 2N3905 2N3906 2N3906 2N4123 2N4124 2N4125 2N4400 2N4401 2N4401 2N4402 2N4403 2N4403 2N441 Abstract: .. 2N5400 2N5400 2N5401 2N5401 2N5401 2N5401 2N5401 2N5550 2N5550 2N5550 2N5550 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 2N5551 .. MPSL51 MPSL51 2N5401 MPSW01 MPSW01 BC635-16 BC635-16 MPSW01A MPSW01A BC635-16 BC635-16 MPSW05 MPSW05 MPSA06 MPSA06 MPSW06 MPSW06 MPSA06 MPSA06 MPSW13 MPSW13 ..  Tags: 2n5401 2n3904 MPSa06 equivalent BC517 "cross reference" bc557 cross reference 2n5401 2n3906 UMH3N  SSTA14  SSTA13  SSTA05*  SST6427*  SMBTA56  RXT2222A  PZT2222A  pxt2222a  PUMX1  PMBT4401   2SC1651S 2SC2062S 2SC2411K 2SC2412K 2SC2413K 2SC4081 2SC4097 2SC4098 2SC4102 2SC4132 2SC4505 2SC4617 2SC4618 2SC4672 2SC4997 2SC4998 2SC5053 2SA1036K 2SA1037AK 2SA1576A 2SA1579 2SA1759 2SA1774 2SA1797 2SA1900 2SB1132 2SB1189 2SB1260 2SB1424 2SB1561 2N2925	239.78 Kb	9 Pages	Original
	First line: sot-23 marking LC iPLO 2N5401 BT5401 GENERAL PURPOSE AMPLFER NCORPORATED High Collector-Emitter Breakdown Voltage Epitaxial Planar Construction Available both Thru-Hole Surface Mount Packages Abstract: .. I II UEO iPLO 2N5401 / M M BT5401 BT5401 PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in both Thru-Hole ..  Tags: sot-23 marking LC   datasheet abstract..	76.79 Kb	2 Pages	OCR Scan
	First line: 2N6719 High VoltageAmplifiers bSQ1130 OOBiSaE bfll NSCS NATL SEHICOND (DISCRETE VCEO<sust) (Volts) Device (mA) hFE@lc VcEfsat) (MHz) Package (Amb) (mW) (mA) (Volts) (mA) (mA) 2N6719 TO-237(91 MMBTA42 TO-236* MPSA42 TO-92(92) MMBTA92 TO-236* Abstract: .. 10 0.2 50 5.0 100 TO-92 TO-92 92 350 MMBT5551 MMBT5551 600 80 10 0.2 50 5.0 100 TO-236 TO-236 * 350 150 2N5401 600 60 10 0.5 50 5.0 100 TO-92 TO-92 92 625 MMBT5401 MMBT5401 600 60 10 0.5 50 5.0 100 TO-236 TO-236 * 350 140 2N5550 2N5550 600 60 10 0.25 50 5.0 ..  Tags: 2N6719   datasheet abstract..	85.8 Kb	1 Pages	OCR Scan
	First line: SAMSUNG TlbMlMS 0007154 2N5400 EPITAXIAL SILICON TRANSISTOR 29-21 AMPLIFIER TRANSISTOR Collector-Base Voltage: Veto =120V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Abstract: .. 150  �C : Storage Temperature Tstg -55-150  �C †� Refer to 2N5401 for graphs ELECTRICAL CHARACTERISTICS Ta=25 �C [ Characteristic â– Symbol Test Condition Min iyp Max Unit i Collector-Base ..  Tags:   datasheet abstract..	52.83 Kb	1 Pages	OCR Scan
	First line: 2N5401 RoHS Compliant Product suffix "-C" specifies halogen lead-free 4.55±0.2 Abstract: .. 2N5401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 4.55 �0.2 3.5 �0.2 4.5 � 0.2 14.3 � 0.2 2.54 �0.1 1.27 Typ. 0.46+0.1 –0.1 0.43+0 ..  Tags: 2N5401   2N5401	158.9 Kb	1 Pages	Original
	Datasheets per page:  50 | 250 | 500

Specsheet Results
	2N5401	N/A	Silicon PNP	Specification
	2N5401	N/A	RME	Specification
	2N5401LT1	N/A	PNP Transistor	Specification
	2N5401T/R	Philips Semiconductors / NXP Semiconductors	Si PNP Lo-Pwr BJT	Specification

Stock photo available at buy-transistors.com - (+44) 191-417-7003 or enquiries@buy-transistors.com for quote.

Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive