2N5401 datasheet and Application Note, Data Sheet, Circuit, PDF, Pinout

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2N5401 Datasheet, Circuit, PDF, & Application Note Results

Datasheet Search Results			1 - 50 of about 80 for 2N5401
	2N5401	AUK Corp.	PNP Silicon Transistor (General purpose amplifier High voltage application)	198.97 Kb, 3 Pages.	Buy Now!

	2N5401	Boca Semiconductor	Amplifier Transistor PNP Silicon	141.38 Kb, 5 Pages.	Buy Now!

	2N5401	Central Semiconductor	Small Signal Transistors TO-92 Case (Continued)	57.81 Kb, 1 Pages.	Buy Now!

	2N5401	Continental Device India Limited	Semiconductor Device Data Book 1996	103.54 Kb, 1 Pages.	Buy Now!

	2N5401	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb, 36 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	37.24 Kb, 1 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	36.42 Kb, 4 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	45.62 Kb, 1 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	68.85 Kb, 5 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	466.3 Kb, 12 Pages.	Buy Now!

	2N5401	Fairchild Semiconductor	PNP General Purpose Amplifier	108.83 Kb, 4 Pages.	Buy Now!

	2N5401	Honey Technology	150 V, PNP silicon expitaxial planar transistor	123.19 Kb, 2 Pages.	Buy Now!

	2N5401	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	141.07 Kb, 2 Pages.	Buy Now!

	2N5401	Korea Electronics	V(ceo): 40V I(c): 200mA P(c): 625mW NPN Silicon Transistor	495.64 Kb, 5 Pages.	Buy Now!

	2N5401	Korea Electronics	High Voltage Transistor	152.18 Kb, 2 Pages.	Buy Now!

	2N5401	Korea Electronics	TRANS GP BJT PNP 150V 0.6A 3TO-92	65.28 Kb, 2 Pages.	Buy Now!

	2N5401	Micro Commercial Components	TRANS GP BJT PNP 150V 0.6A 3TO-92	679.83 Kb, 4 Pages.	Buy Now!

	2N5401	Micro Electronics	High Voltage Transistors	102.75 Kb, 1 Pages.	Buy Now!

	2N5401	Micro Electronics	Semiconductor Devices	49.59 Kb, 1 Pages.	Buy Now!

	2N5401	Micro Electronics	SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	165.68 Kb, 2 Pages.	Buy Now!

	2N5401	Micro Electronics	Semiconductor Device Data Book	55.26 Kb, 1 Pages.	Buy Now!

	2N5401	Motorola	The European Selection Data Book 1976	67.85 Kb, 2 Pages.	Buy Now!

	2N5401	Motorola	European Master Selection Guide 1986	51.87 Kb, 1 Pages.	Buy Now!

	2N5401	National Semiconductor	PNP General Purpose Amplifier	111.92 Kb, 4 Pages.	Buy Now!

	2N5401	National Semiconductor	PNP Transistor	416.99 Kb, 11 Pages.	Buy Now!

	2N5401	National Semiconductor	High Voltage Amplifier	67.3 Kb, 1 Pages.	Buy Now!

	2N5401	On Semiconductor	Amplifier Transistor (PNP Silicon)	176.29 Kb, 6 Pages.	Buy Now!

	2N5401	Philips Semiconductors / NXP Semiconductors	Small-signal Transistors	4.29 Kb, 1 Pages.	Buy Now!

	2N5401	Philips Semiconductors / NXP Semiconductors	Silicon PNP High Voltage Transistor	55.56 Kb, 3 Pages.	Buy Now!

	2N5401	Philips Semiconductors / NXP Semiconductors	PNP high-voltage transistor	43.97 Kb, 8 Pages.	Buy Now!

	2N5401	ROHM Electronics	General Purpose Bipolar Transistor, PNP, 150V, TO-92, 3-Pin	80.59 Kb, 2 Pages.	Buy Now!

	2N5401	Samsung Electronics	PNP EPITAXIAL SILICON TRANSISTOR	77.31 Kb, 2 Pages.	Buy Now!

	2N5401	Semiconductors, Inc.	High Voltage Transistors	282.75 Kb, 4 Pages.	Buy Now!

	2N5401	Semtech	PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications	123.19 Kb, 2 Pages.	Buy Now!

	2N5401	Sinyork Co., Ltd.	Mini size of Discrete semiconductor elements	494.27 Kb, 15 Pages.	Buy Now!

	2N5401	Sprague	Small Signal TO-92 Plastic Transistors	370.91 Kb, 5 Pages.	Buy Now!

	2N5401	Thomson-CSF	Shortform Semiconductor Catalogue 1982	229.31 Kb, 2 Pages.	Buy Now!

	2N5401	Thomson-CSF	Condensed Data Book 1977	34.63 Kb, 1 Pages.	Buy Now!

	2N5401	Transys Electronics	Plastic-Encapsulated Transistors	63.17 Kb, 2 Pages.	Buy Now!

	2N5401	Usha Ltd.	Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW.	75.64 Kb, 2 Pages.	Buy Now!

	2N5401	Various Russian Datasheets	Transistor	82.42 Kb, 8 Pages.	Buy Now!

	2N5401	Weitron Technology	PNP Transistors	663.45 Kb, 4 Pages.	Buy Now!

	2N5401	Zetex Semiconductors	Quick Reference Guide (Discrete Semiconductors) 1991	51.98 Kb, 1 Pages.	Buy Now!

	2N5401AI	Continental Device India Limited	0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE	58.35 Kb, 3 Pages.	Buy Now!

	2N5401BU	Fairchild Semiconductor	PNP General Purpose Amplifier	36.42 Kb, 4 Pages.	Buy Now!

	2N5401C	Korea Electronics	High Voltage Transistor	168.52 Kb, 2 Pages.	Buy Now!

	2N5401C	Korea Electronics	EPITAXIAL PLANAR PNP TRANSISTOR	155.95 Kb, 2 Pages.	Buy Now!

	2N5401C	Korea Electronics	TRANS GP BJT PNP 150V 0.6A 3TO-92	65.28 Kb, 2 Pages.	Buy Now!

	2N5401CSM	Semelab	Bipolar PNP Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications	10.91 Kb, 1 Pages.	Buy Now!

	2N5401CTA	Fairchild Semiconductor	PNP General Purpose Amplifier	36.42 Kb, 4 Pages.	Buy Now!

	Datasheets per page: 50 \| 250 \| 500

Contextual Datasheet Results		1 - 50 of about 156 for 2N5401
	First line: 2N5400 2N5401 2N5400 2N5401 Version 2006-06-17 Power dissipation Verlustleistung General Purpose Si-Epitaxial Abstract: .. 2N5400 / 2N5401 PNP General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP Version 2006-06-17 Dimensions - Maße [mm] Power .. datasheet abstract..	102.95 Kb	2 Pages

	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are .. datasheet abstract..	311.39 Kb	3 Pages

	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are .. datasheet abstract..	272.72 Kb	3 Pages

	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are .. datasheet abstract..	240.31 Kb	3 Pages

	First line: 2N5400 2N5401 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 / 2N5401. PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are .. datasheet abstract..	197.34 Kb	3 Pages

	First line: 2N5401 Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Rating Collector-Emitter Abstract: .. 2N5401. WEITRON http://www.weitron.com.tw. IC= -1.0/1.0 mAdc, VCE=-5.0 Vdc IC= -10 mAdc, VCE= -5.0 Vdc 80 - 1 2 hFE 3 80. -0.5. -1.0. - Classification of hFE 2 Rank A B C. Range 80-160 120 .. datasheet abstract..	663.45 Kb	4 Pages

	First line: Semiconductor 2N5401 Silicon Transistor Description General purpose amplifier High voltage application Features Abstract: .. 2N5401 PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector .. datasheet abstract..	198.97 Kb	3 Pages

	First line: PROCESS Small Signal Transistor High Voltage Transistor Chip CP716 Central Semiconductor Corp. Abstract: .. 2N5401. Process EPITAXIAL PLANAR. Die Size 20 x 20 MILS. Die Thickness 9.0 MILS. Base Bonding Pad .. datasheet abstract..	208.14 Kb	2 Pages

	First line: Semiconductort Amplifier Transistors Silicon MAXIMUM RATINGS Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Abstract: .. Amplifier Transistors PNP Silicon. MAXIMUM RATINGS. Rating Symbol 2N5400 2N5401 Unit. Collector‐Emitter Voltage VCEO 120 150 Vdc. Collector‐Base Voltage VCBO 130 160 Vdc. Emitter‐Base Voltage .. datasheet abstract..	67.14 Kb	8 Pages

	First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES continued HIGH-VOLTAGE LOW-POWER TRANSISTORS TYPE NUMBER Abstract: .. 2N5551 TO-92 160 300 630 80 >80 100 2N5401 184. BF420L TO-92 300 50 625 50 >50 60 BF421L 536. BF422L TO-92 250 50 625 50 >50 60 BF423L 536. MPSA42 TO-92 300 100 500 40 >40 50 MPSA92 822. MPSA43 TO-92 200 100 500 .. datasheet abstract..	4.27 Kb	1 Pages

	First line: 2N5401 AMPLIFIER TRANSISTOR Collector-Emitter Voltage VCEO= 150V Collector Dissipation max =625mW EPITAXIAL SILICON Abstract: .. 2N5401 PNP EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW. ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL .. datasheet abstract..	51.81 Kb	2 Pages

	First line: 2N5401 Preferred Device Amplifier Transistors Silicon Features Pb-Free Packages Available COLLECTOR Abstract: .. 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features ∞ Pb-Free Packages are Available* MAXIMUM RATINGS. Rating Symbol 2N5400 2N5401 Unit. Collector - Emitter Voltage VCEO 120 .. datasheet abstract..	69.43 Kb	6 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5400 2N5401 high-voltage transistors Product Abstract: .. 2N5400; 2N5401 PNP high-voltage transistors book, halfpage M3D186 1997 May 22 2 Philips Semiconductors Product specification PNP high-voltage transistors 2N5400; 2N5401 FEATURES .. datasheet abstract..	66.13 Kb	8 Pages

	First line: UNISONIC TECHNOLOGIES 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-emitter voltage VCEO -150V Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N5401 PNP SILICON TRANSISTOR. www.unisonic.com.tw 1 of 4. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-001,D. HIGH VOLTAGE SWITCHING TRANSISTOR. FEATURES .. datasheet abstract..	48.81 Kb	4 Pages

	First line: 2N5400 2N5401 Preferred Device Amplifier Transistors Silicon Features Pb-Free Packages Available Abstract: .. 2N5400, 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol 2N5400 2N5401 Unit. Collector Emitter Voltage .. datasheet abstract..	79.83 Kb	6 Pages

	First line: 2N5401 MMBT5401 Discrete POWER Signal Technologies 2N5401 MMBT5401 TO-92 SOT-23 Mark General Abstract: .. 2N5401 / MMBT5401. PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. MMBT5401 .. datasheet abstract..	102.47 Kb	4 Pages

	First line: 2N5401 2N5401 MMBT5401 Discrete POWER Signal Technologies MMBT5401 TO-92 SOT-23 Mark General Abstract: .. 2N5401 / MMBT5401. NDiscrete POWER & SignalTechnologies. PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages .. datasheet abstract..	64.2 Kb	4 Pages

	First line: 2N5401 MMBT5401 2N5401 Discrete POWER Signal Technologies MMBT5401 TO-92 SOT-23 Mark General Abstract: .. MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES .. datasheet abstract..*	116.41 Kb	4 Pages

	First line: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document 2N5400 / D Amplifier Transistors Silicon 2N5400 Abstract: .. Rating Symbol 2N5400 2N5401 Unit. Collector ‐ Emitter Voltage VCEO 120 150 Vdc. Collector ‐ Base Voltage VCBO 130 160 Vdc. Emitter ‐ Base Voltage VEBO 5.0 Vdc. Collector Current — Continuous IC 600 mAdc .. datasheet abstract..	176.3 Kb	6 Pages

	First line: 2N5401 MMBT5401 2N5401 MMBT5401 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol .. datasheet abstract..*	68.86 Kb	5 Pages

	First line: 2N5401 Silicon Amplifier Transistor 625mW Through Hole Abstract: .. Through Hole Package 150oC Junction Temperature. Case: TO-92, Molded Plastic. Marking: 2N5401. Charateristic Symbol Value Unit. Collector-Emitter Voltage VCEO 150 V. Collector-Base Voltage .. datasheet abstract..	679.85 Kb	4 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5401 high-voltage transistor Product specification Abstract: .. 2N5401 PNP high-voltage transistor book, halfpage M3D186 2004 Oct 28 2 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES • Low current max .. datasheet abstract..	46.35 Kb	6 Pages

	First line: 2N5401 EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage VCEO=-150V Abstract: .. UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-001,A HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES Collector-Emitter Voltage: VCEO=-150V Collector .. datasheet abstract..	44.2 Kb	2 Pages

	First line: 2N5401 TO-92 Plastic-Encapsulate Transistors Transistor PNP FEATURE Power dissipation Tamb=25 Collector current -0.6 Abstract: .. TO-92 Plastic-Encapsulate Transistors Transistor PNP 2N5401. FEATURE. Power dissipation P :0.625 W Tamb=25 C Collector current I :-0.6 A. Collector-base voltage V :-160 V. Operating and storage .. datasheet abstract..	167.73 Kb	2 Pages

	First line: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. 2N5401 EPITAXIAL PLANAR Abstract: .. 2N5401. * Pulse Test : Pulse Width# 300 Ã S, Duty Cycle# 2%. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO. VCB=-120V, IE=0 - - -50 nA. VCB=-120V, IE=0, Ta .. datasheet abstract..	65.26 Kb	2 Pages

	First line: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.LTD TO-92 Plastic-Encapsulate Transistors 2N5401 FEATURE Power dissipation Abstract: .. 2N5401 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM : - 0.6 A Collector-base voltage V BR CBO : -160 V Operating and storage junction .. datasheet abstract..	38.07 Kb	2 Pages

	First line: Transys Electronics TO-92 Plastic-Encapsulated Transistors 2N5401 FEATURE Power dissipation TRANSISTOR PNP TO-92 Abstract: .. TO-92 Plastic-Encapsulated Transistors 2N5401 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM : - 0.6 A Collector-base voltage V BR CBO .. datasheet abstract..	63.17 Kb	2 Pages

	First line: General Purpose Amplifier FEATURES High Collector Breakdown Voltage Noise Complementary 2N5401 Abstract: .. ★ High Collector Breakdown Voltage; Low Noise; ★ Complementary to 2N5401 ★ This device is designed as a general purpose amplifier and switch for applications requiring high voltages. TO – 92 .. datasheet abstract..	20.63 Kb	1 Pages

	First line: 2N5401 2N5401 Amplifier Transistor Collector-Emitter Voltage VCEO= 150V Collector Dissipation max =625mW Suffix Abstract: .. ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004. 2N5401. PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted. Electrical Characteristics Ta .. datasheet abstract..	36.42 Kb	4 Pages

	First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D186 2N5401 high-voltage transistor Product specification Abstract: .. 2N5401 PNP high-voltage transistor book, halfpage M3D186 1999 Apr 08 2 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES • Low current max .. datasheet abstract..	46.75 Kb	8 Pages

	First line: Philips Semiconductors Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER Abstract: .. 2N5400 2N5401 2N5401 2N5401 2N5401 2N5401 2N5550 2N5550 2N5551 2N5551 2N5551 2N5551 .. MPSL51 2N5401 MPSW01 BC635-16 MPSW01A BC635-16 MPSW05 MPSA06 MPSW06 MPSA06 MPSW13 .. datasheet abstract..	239.78 Kb	9 Pages

	First line: 2N5401 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Transistor Plastic-Encapsulate Abstract: .. 2N5401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 4.55±0.2 3.5±0.2 4.5 ± 0.2 14.3 ± 0.2 2.54±0.1 1.27 Typ. 0.46+0.1 –0.1 0.43+0 .. datasheet abstract..	158.9 Kb	1 Pages

	First line: 2N5401 Preferred Device Amplifier Transistors Silicon Features These Pb-Free Devices COLLECTOR Abstract: .. 2N5401 Preferred Device. Amplifier Transistors PNP Silicon. Features. • These are Pb Free Devices* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage VCEO 150 Vdc. Collector .. datasheet abstract..	82.64 Kb	5 Pages

	First line: COMPONENTS LTD. 2N5401 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS EPITAXIAL PLANAR TRANSISTOR Description Designed Abstract: .. 2N5401. DISCRETE SEMICONDUCTORS. R. DC COMPONENTS CO., LTD.. TECHNICAL SPECIFICATIONS OF PNP .. datasheet abstract..	207.35 Kb	1 Pages

	First line: 2N5400 Discrete POWER Signal Technologies 2N5400 TO-92 General Purpose Amplifier This device Abstract: .. See 2N5401 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may .. datasheet abstract..*	22.68 Kb	2 Pages

	First line: CMLT5554 SURFACE MOUNT PICOmini DUALCOMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS Central Semiconductor Corp. Abstract: .. of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface .. datasheet abstract..	88.41 Kb	2 Pages

	First line: MPSA94 High-Voltage Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Rating Abstract: .. 2N5401. WEITRON http://www.weitron.com.tw. MPSA94. FIG3. FIG2. FIG1. WEITRON http://www.weitron.com.tw. MPSA94. Dim A B C D. E G H J K. L. Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30. Max. TO-92. TO-92 Outline .. datasheet abstract..	1936.28 Kb	4 Pages

	First line: Semiconductor 2N5551 Silicon Transistor Descriptions General purpose amplifier High voltage application Features Abstract: .. collector saturation voltage : VCE sat =0.5V MAX. • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO-92 Outline Dimensions unit : mm .. datasheet abstract..	196.55 Kb	3 Pages

	First line: MPSL51 Discrete POWER Signal Technologies MPSL51 TO-92 General Purpose Amplifier This device Abstract: .. See 2N5401 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may .. datasheet abstract..*	22.68 Kb	2 Pages

	First line: 2N5401 MMBT5401 2N5401 MMBT5401 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol .. datasheet abstract..*	471.29 Kb	12 Pages

	First line: 2N5401 MMBT5401 2N5401 MMBT5401 TO-92 SOT-23 Mark General Purpose Amplifier This device Abstract: .. MMBT5401 2N5401. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol .. datasheet abstract..*	466.3 Kb	12 Pages

	First line: 2N5550 2N5551 2N5550 2N5551 Version 2006-06-17 Power dissipation Verlustleistung General Purpose Si-Epitaxial Abstract: .. 2N5400 / 2N5401 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden .. datasheet abstract..	102.38 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. datasheet abstract..	235.14 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be. manufactured in different pin configurations. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value .. datasheet abstract..	229.35 Kb	3 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. datasheet abstract..	217.02 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. datasheet abstract..	184.49 Kb	2 Pages

	First line: 2N5550 2N5551 Silicon Epitaxial Planar Transistors general purpose high voltage amplifier applications. Abstract: .. ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be. manufactured in different pin configurations. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value .. datasheet abstract..	223.8 Kb	3 Pages

	First line: Semiconductor 2N5401N Silicon Transistor Description General purpose amplifier High voltage application Features Abstract: .. 2N5401N 2N5401 TO-92N. Outline Dimensions unit : mm. S Se em mi ic co on nd du uc ct to or r. PIN Connections 1. Emitter 2. Base 3. Collector. 3.09~3.29. 0.40 Max. 1.27 Typ. 4.20~4.40. 0.52 Max. 2.25 Max. 13 .. datasheet abstract..	247.36 Kb	4 Pages

	First line: LESHAN RADIO COMPANY LTD. Amplifier Transistors Silicon L2N5401 L2N5401 MAXIMUM RATINGS Rating Abstract: .. Rating Symbol 2N5401 Unit. Collector Emitter Voltage VCEO 150 Vdc. Collector Base Voltage VCBO 160 Vdc. Emitter Base Voltage VEBO 5.0 Vdc. Collector Current Continuous IC 600 mAdc. Total Device .. datasheet abstract..	93.49 Kb	4 Pages

	First line: Continental Device India Limited IS / ISO IECQ Certified Manufacturer IS / ISO QSC / L- IECQC IECQC Abstract: .. PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE. High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg .. datasheet abstract..	58.75 Kb	3 Pages

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Specsheet Results
	2N5401	N/A	Silicon PNP	Specification

	2N5401	N/A	RME	Specification

	2N5401LT1	N/A	PNP Transistor	Specification

	2N5401T/R	Philips Semiconductors / NXP Semiconductors	Si PNP Lo-Pwr BJT	Specification

Cross References
	2N5401	Cross References (60)

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