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2N5400 MOTOROLA

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Abstract: Sanyo KRA222S KRA222S 2SB568 2SB568 Hitachi KTB1369 KTB1369 2N5400 Motorola 2N5400 2SA1175 2SA1175 NEC , Maker KEC 2N2222/A 2N2222/A Motorola KTN2222/A KTN2222/A 2SA1150 2SA1150 Toshiba KTA1272 KTA1272 2SA1510 2SA1510 Sanyo KRA1 10S 2SB546A 2SB546A NEC KTB 1369 2N2369/A 2N2369/A Motorola KTN2369/A KTN2369/A 2SA1151 2SA1151 NEC KTA1266 KTA1266 2SA1511 2SA1511 Sanyo KRA1 10M 2SB560 2SB560 Sanyo KTA1 023 2N2906 2N2906 Motorola 2N3906 2N3906 , Motorola KTN2907/A KTN2907/A 2SA1156 2SA1156 NEC KTA1703 KTA1703 2SA1519 2SA1519 Sanyo KRA223S KRA223S 2SB562 2SB562 Hitachi ... Original
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7 pages,
89.84 Kb

2SD1131 BA1F4M KTC3114 KTD2499 BC238 MOTOROLA KTC4369 2SC2320 BC550 MOTOROLA 2SA1019 2SC2320 datasheet 2N3906 MOTOROLA 2N5400 MOTOROLA 2SD1960 2sc1983 2N2222/A 2N2369/A 2N2222/A abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon 2N5400 2N5401 2N5401* ·Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIM UM RATINGS Rating C ollector-E m itter , Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-55 2N5400 2N5401 2N5401 E LE C TR IC A L , and Storage Junction Temperature Range Symbol VCEO VCBO vebo 2N5400 120 130 5.0 2N5401 2N5401 , = 100 Vdc. IE = {VCB = 120 Vdc, lE = v (BR)CEO 2 N5400 N5400 2N5401 2N5401 V(BR)CBO 2N5400 2N5401 2N5401 v (BR)EBO 130 ... OCR Scan
datasheet

4 pages,
117.17 Kb

2N5400 2N5401 MOTOROLA 2N5401 datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon 2N5400 2N5401 2N5401* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 , Device Data © Motorola, Inc. 1996 1 2N5400 2N5401 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless , Collector Cut­Off Region Motorola Small­Signal Transistors, FETs and Diodes Device Data 3 2N5400 , , FETs and Diodes Device Data 5 2N5400 2N5401 2N5401 6 Motorola Small­Signal Transistors, FETs and ... Original
datasheet

8 pages,
76.17 Kb

2N5401 2N5401 motorola 2N5400/D 2N5400/D abstract
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Abstract: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5400 , Figure 9. Turn­Off Time Motorola Small­Signal Transistors, FETs and Diodes Device Data 2N5400 , COLLECTOR 5 2N5400 2N5401 2N5401 Motorola reserves the right to make changes without further notice to ... Original
datasheet

6 pages,
176.3 Kb

transistor 2N5401 motorola 1N914 diode datasheet 2N5400 MOTOROLA 1N914 2N5401 2N5400 2N5400/D 2N5400/D abstract
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Abstract: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 2N5401 Unit Collector ­ Emitter Voltage , Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5400 , Figure 9. Turn­Off Time Motorola Small­Signal Transistors, FETs and Diodes Device Data 2N5400 ... Original
datasheet

5 pages,
117.68 Kb

2N5400 1N914 2N5401 2N5400/D 2N5400/D abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 2N5401 Unit Collector-Emitter Voltage , use and best overall value. © Motorola, Inc. 1996 (M) MOTOROLA 2N5400 2N5401 2N5401 ELECTRICAL , Breakdown VoltageO) (IC = 1.0 mAdc, Ib = 0) 2N5400 2N5401 2N5401 v(BR)CEO 120 150 - Vdc Collector-Base Breakdown Voltage (lC = 100nAdc, Ie = 0) 2N5400 2N5401 2N5401 V(BR)CBO 130 160 - Vdc Emitter-Base Breakdown Voltage (lE = ... OCR Scan
datasheet

5 pages,
222.71 Kb

2N5400 1N914 2N5401 2N5400/D 2N5400/D abstract
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Abstract: A G E (V O L T S ) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-46 2N5400, 2N5401 2N5401 F , Derate above 25°C > , SIST O R S Sym bol R 0JA R ö jc M ax 200 83.3 Unit 'C .W t w PN P SIL IC O N T h is is a Motorola , N 5400 2N5401 2N5401 2 N 5400 2N5401 2N5401 'E B O v (BR)CEO 2N5400 2N5401 2N5401 v (B R )C BO 2N5400 2N5401 2N5401 v (BR|EBO , e - hFE - 5 . 0 Vdc) 2N5400 2N5401 2N5401 2N5400 2N5401 2N5401 2N5400 2N5401 2N5401 v CE(sat) - - v BE(sat) - ... OCR Scan
datasheet

3 pages,
97.18 Kb

2N5400 2N5401 2N5400 abstract
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Abstract: Amplifier Transistors PNP Silicon 2 N5400 N5400 2N5401 2N5401* * Motorola Preferred Device COLLECTOR Boca Semiconductor Corp. (BSC) BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 2N5401 Unit Collector-Emitter , Collector-Emitter Breakdown VoltageO) (IC = 1 0 mAdc, Ib = 0) 2N5400 2N5401 2N5401 v(BR)CEO 120 150 - Vdc Collector-Base Breakdown Voltage (iC = 100 nAdc, lE = 0) 2N5400 2N5401 2N5401 V(BR)CBO 130 160 - Vdc Emitter-Base Breakdown Voltage (lE = 10nAdc, lc = 0) v(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB =100 Vdc, Ie = 0) 2N5400 ... OCR Scan
datasheet

5 pages,
141.38 Kb

N5400 2N5400 MOTOROLA 2N5400 2N5401 datasheet abstract
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Abstract: MOTOROLA SC OIODES/OPTO} 34 D lF | b 3 b ? 2 S S G0 3 -GD1 i 6367255 MOTOROLA SC CDIODES/OPTO) 3^C 38001 D SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) DIE NO. - PNP LINE SOURCE - DMB156 DMB156 This die provides performance similar to that of the following device types: 2N5400 2NS401 2NS401 MM4001 MM4001 MPS4B88 MPS4B88 MPS4889 MPS4889 MPSD52 MPSD52 MPSD53 MPSD53 MPSLS1 2C5401 2C5401 Designed for , s 300 jis, duty cycle = £ 2%. 2. Detailed device characteristics are available from your Motorola ... OCR Scan
datasheet

1 pages,
64.6 Kb

SILICON SMALL-SIGNAL DICE 2NS40 MPS4889 2ns401 datasheet abstract
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Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon 2N5400 2N5401 2N5401* COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m , g e J u n c tio n T e m p e ra tu re R ang e T j , TSfg Symbol VCEO v CBO Vebo 2N5400 120 , (W ) © M otorola, Inc. 1996 M O T O R O L A 2N5400 2N5401 2N5401 ELECTRICAL CHARACTERISTICS (T , NF hfe 30 40 - 20 0 20 0 8.0 dB C 0 bo f t MHz 100 100 - 40 0 30 0 6.0 PF 2 Motorola S m ... OCR Scan
datasheet

5 pages,
222.5 Kb

Diodes 5401 2n 5401 2N5400/D 2N5400/D abstract
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CJC=17.5P VJC=0.3 MJC=0.3 TF=636P TR=442N) *2N5400 MCE 5-27-97 *Ref: Motorola Small-Signal Device CJC=17.9P VJC=.3 MJC=.3 TF=795P TR=552N) *2N3903 2N3903 2N3903 2N3903 MCE 5-20-97 *Ref: Motorola Small-Signal Device Databook VJE=1.1 MJE=0.5 CJC=4.73P VJC=0.3 MJC=0.3 TF=636P TR=298N) *2N4123 2N4123 2N4123 2N4123 MCE 5-20-97 *Ref: Motorola *Ref: Motorola Small-Signal Device Databook, Q4/94 Q4/94 Q4/94 Q4/94 *Si 350mW 15V 200mA 300MHz GenPurp pkg:TO-92B 1,2,3 ) *2N4265 2N4265 2N4265 2N4265 MCE 5-20-97 *Ref: Motorola Small-Signal Device Databook, Q4/94 Q4/94 Q4/94 Q4/94 *Si 350mW 12V 200mA 300MHz
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*= *Copyright (c) 1997 MicroCode Engineering, Inc. *All Rights Reserved *= *= *NPN Trans Pinout: C,B,E *= *NPN *Default NPN BJT pkg:TO-92B 1,2,3 .MODEL NPN~ NPN() *QNPN *pkg:TO-92B 1,2,3 .MODEL QNPN NPN(IS=3.2E-16 2E-16 2E-16 2E-16 BF=141 VAF=35 ISE=2.6 NE=1.46 CJE=1E-13 1E-13 1E-13 1E-13 + MJE=0.333 TF=6E-11 6E-11 6E-11 6E-11 CJC=1E-13 1E-13 1E-13 1E-13 CJS=2.2E-13 2E-13 2E-13 2E-13 MJS
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