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2N5303 Central Semiconductor Corp Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
2N5303 LEAD FREE Central Semiconductor Corp TRANS NPN 80V 20A TO-3 visit Digikey Buy
JANTX2N5303 Microsemi Corporation Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, SIMILAR TO TO-3, 2 PIN visit Digikey Buy

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2N5303 Datasheet

Part Manufacturer Description PDF Type
2N5303 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 20A TO-3 Original
2N5303 Microsemi NPN Transistor Original
2N5303 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original
2N5303 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original
2N5303 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5303 API Electronics Short form transistor data Scan
2N5303 Central Semiconductor NPN Silicon Power Transistor, TO-3 Scan
2N5303 Diode Transistor Transistor Short Form Data Scan
2N5303 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5303 General Diode Transistor Selection Guide Scan
2N5303 General Electric High current, high power, high speed N-P-N power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan
2N5303 General Transistor Power Transistor Selection Guide Scan
2N5303 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan
2N5303 Mospec NPN Silicon High-Power Transistor Scan
2N5303 Motorola The European Selection Data Book 1976 Scan
2N5303 Motorola European Master Selection Guide 1986 Scan
2N5303 Motorola Power Transistor Selection Guide Scan
2N5303 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5303 N/A Semiconductor Master Cross Reference Guide Scan
2N5303 N/A Shortform Electronic Component Datasheets Scan
Showing first 20 results.

2N5303

Catalog Datasheet MFG & Type PDF Document Tags

2N5302

Abstract: 2N5303 Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C 0 C , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES
Microsemi
Original
1000C 2n5302 transistor 2N5302 JANTXV TRANSISTOR 2n5302 MIL-PRF-19500/456

2N5302

Abstract: 2N5303 TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF , 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc , 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 5.0 µAdc OFF , / (978) Fax: (978) 689-0803 Vdc 03/98 REV: C Page 1 of 2 2N5302, 2N5303 JAN SERIES
New England Semiconductor
Original
jantx 2n5302 adc ic

2n5302

Abstract: 2N5301 VcEO(sus) = 80 Vdc (Min) @ lc = 200 mAdc (2N5303) · Low Collector-Emitter Saturation Voltage - VCE(sat) = °-75 Vd0 (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303) · Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc (2N5303) · Complements to PNP 2N4398, 2N4399 , 30 2N5302 60 60 30 7.5 200 1.14 -6 5 t o +200 2N5303 80 80 20 Unit Vdc Vdc Ade Ade Watts W , 3-54 Motorola Bipolar Power Transistor Device Data 2NS301 2N 5302 2N5303 ELECTRICAL
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OCR Scan
Motorola transistor 358 motorola 2n5303 358 motorola 2N4399 pnp 2N5745 2NS302 2NS303

2N5303

Abstract: 2n5302 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E .FO R U SE IN P , (2N5303) PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS Low C o lle c to r -E m itte r , (Max) @ Ic = lOAdc (2N5303) E x c e lle n t S a fe O p e ra tin g A re a C o m p le m e n ts t o 200 W att dc Power Rating to 30 Vdc (2N5303) PNP 2N4398, 2N4399 a n d 2N5745 MAXIMUM RATINGS 2N5301 , 2N5303 80 80 20 Unit Vdc Vdc Ade Ade W atts W/°C "C Symbol " JC " CA Max 0.875 34 Unit "crw
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OCR Scan
2N530I 2N5302 EB

2n5302

Abstract: 2n5301 Collector-Emitter Sustaining Voltage - VcEO(sus) = 80 Vdc (Min) @ Iq = 200 mAdc (2N5303) Low Collector-Emitter Saturation Voltage - = ° '75 Vdc < Max) @ 'C = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303) Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc (2N5303) Complements to PN P 2N4398 , 'c Iß Pd 2N5301 40 40 30 2N5302 60 60 30 7.5 200 1.14 - 6 5 t o +200 2N5303 80 80 20 , , Inc. 1995 (M) MOTOROLA \ 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS (T q = 2 5 °C
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OCR Scan
200WATT 2N5301/D 2N530

2N5301

Abstract: 2N5302 SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , VCBO Collector-base voltage 2N5302 VALUE 40 Open emitter 60 2N5303 Collector-emitter voltage 40 2N5302 Open base 2N5303 VEBO V 80 2N5301 VCEO UNIT Emitter-base voltage 60 V 80 Open collector 5 2N5301/5302 30 2N5303 20 IC , SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors
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Original
2n53 2N4398/4399/5745

2N5301

Abstract: 2N5303 Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power , 2N5302 NG S HA 2N5303 VCEO VEBO OND MIC E 2N5301 Collector-base voltage INC Collector-emitter voltage TOR UC CONDITIONS 2N5301 2N5302 Open emitter Open base 2N5303 , A Base current Tj V 30 2N5303 PD V 80 Collector current IB V 80 , 2N5302 2N5303 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL
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Original
53-02V 2N5302 data sheet 2N5302 inchange

2N5302

Abstract: 2N5303 , HIGH-POWER, TYPES 2N5302 AND 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved for use , W 2N5302 2N5303 PT (1) TA = +25C W V dc V dc V dc A dc A dc C C/W Max , 2N5303 Pulse response V dc Min Max 15 60 2N5303 V dc 2N5302 V dc 2N5303 V dc , 3041 Emitter - base cutoff current 3061 Collector - emitter cutoff current 2N5302 2N5303 3041 Collector - base cutoff current 2N5302 2N5303 3036 Base - emitter saturated voltage
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Original
MIL-PRF-19500/456E MIL-PRF-19500/456D MIL-PRF-19500

2N5302

Abstract: 2N5303 .) @ lc = 10 A - 2N5303, * Complements to PNP 2N4398.2N4399 and 2N5745 MAXIMUM RATINGS Characteristic Symbol 2N5301 2N5302 2N5303 Unit Collector-Emitter Voltage vCBO 40 60 80 V Collector-Emitter , \ 25 50 75 100 125 150 175 200 T c , TEMPERATURE)0 C) NPN 2N5301 2N5302 2N5303 20 AND 30 AMPERE NPN , G 1.38 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N5301, 2N5302, 2N5303 NPN , mA, lB = 0 ) 2N5301 2N5302 2N5303 ^CEO(SUS) 40 60 80 V Collector Cutoff Current ( VCE = 40 V, lB =
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OCR Scan
N5303
Abstract: Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C 0 C , . Max. Unit 2N5302 2N5303 V(BR)CEO 60 80 2N5302 2N5303 ICEO 10 10 µAdc IEBO 5.0 µAdc 2N5302 2N5303 ICEX 5.0 5.0 µAdc 2N5302 2N5303 ICBO 5.0 , 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N5302, 2N5303 JAN SERIES Microsemi
Original
MIL-PRF-19500/
Abstract: 9C-99 ?S27f l Fig. 3 Derating curves fo r 2N5301, 2N5302, and 2N5303. 2-39 â'" Typical dc beta characteristics as a function o f collector current fo r 2N5301, 2N5302, and 2N5303. , function o f collector current fo r 2N5301, 2N5302, and 2N5303. Fig. 7 â'" Typical storage-time , 2N5303. OSCILLOSCQPe 1 £20n r s Z > 10 K -2 V -J INPUT PULSE t f < 2 0 ft* P W - K > TO , File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ] > High-Current -
OCR Scan
43D2271 TQ-204AA 004D4

2N5301

Abstract: 2N5302 ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use , VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) Low Collector­Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302) 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc (2N5303) Complements to PNP 2N4398, 2N4399 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60
ON Semiconductor
Original

2N5302

Abstract: 2N5303 , SILICON, HIGH-POWER TYPE 2N5302 and 2N5303, JAN, JANTX, JANTXV, AND JANS This specification is approved , 7.5 30 20 -65 to +200 -65 to +200 0.875 0.875 2N5302 2N5303 1/ Derate linearly , 2N5303 V dc Min Max Pulse response 15 60 15 60 2N5302 V dc 2 40 1.8 2N5303 2N5302 2N5303 V dc V dc V dc 2 1 1.5 ton toff pF µs µs 800 1.1 3.0 , 2N5302 2N5303 60 80 V dc V dc ICEO 10.0 µA dc Bias condition D; VEB = 5 V dc
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Original
MIL-PRF19500 MIL-S-19500/456C

2N5303

Abstract: 75 watt npn switching transistor  , 2N5303 SPT5303 Unit Collector-Emitter Voltage vCE0 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc , * 2N5303 BVCE0(sus)* 80 Vdc (lc= 200 mAdc, lB = 0 ) SPT5303 100 Collector Cutoff Current 'ceo mAdc (VCE= 80 Vdc, lB = 0 ) 2N5303 5 (Vc£= 100 Vdc, lB = 0 ) SPT5303 5 Collector Cutoff Current 'CEX mAdc
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OCR Scan
75 watt npn switching transistor TWX-910-583-4807
Abstract: (Min) @ Iq = 200 mAdc (2N5303) Low C ollector-Em itter Saturation Voltage â'" V C E ( s a t) = 0 75 Vdc (Max) @ lc = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ Iq = 10 Ade (2N5303) Excellent Safe Operating Area â'" 200 Watt dc Power Rating to 30 Vdc (2N5303) Complements to PNP 2N4398, 2N4399 and 2N5745 â'˜ MAXIMUM RATINGS Rating Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 , Derating Curve >M otorola, Inc. 1995 fM) MOTOROLA 2N5301 2N5302 2N5303 ELECTRICAL CHARACTERISTICS -
OCR Scan

2N5301

Abstract: 2N5302 collector current for 2N5301. 2N5302, and 2N5303. INPUT PULSE tr & 20 ni P.W.'IOTOIOOm» OC «2% Fig. 8 â , , and 2N5303. 391 , Power Transistors_ 2N5301, 2N5302, 2N5303 File Number 1029 High-Current High-Power High-Speed N-P-N , capability TERMINAL DESIGNATIONS JEDEC TO-2Q4AA The RCA-2N5301, 2N5302 and 2N5303 are epitaxial-base , . MAXIMUM RATINGS, Absolute-Maximum Values: 2N5301 2N5302 2N5303 â'¢ VCBO
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OCR Scan
DD173 2NB301

2N5303

Abstract: 2N5301 Symbol Parameter PNP 2N5301 2N5302 2N5303 Unit NPN 2N4398 2N4399 2N5745 VcEO Collector-emitter , 60 V for 2N5745, 2N5303 80 V hFE* DC Current Gain lc = 1A Vce = 2 V 40 for 2N5745, 2N5303 lc = 10 A Vce = 2 V 15 60 lc = 20 A Vce = 2 V 5 for 2N4398/99, 2N5301/2 , = 10 A ib = 1 A Voltage for 2N4398/99, 2N5301/2 0.75 V for 2N5745, 2N5303 1 V lc = 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 1 V for 2N5745, 2N5303 1.5 V lc = 20
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OCR Scan
n439 2N5301-3 2N5301/02/03 2N4398/99/5745 2N5301/2/3 2N5301/2/3-2N4398/99-2N5745 N4398/9A- G-SI94

108 motorola transistor

Abstract: 2N5301 to + 200 _C Symbol 2N5301 2N5302 2N5303 Unit VCEO 40 60 80 Vdc , · High Collector­Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) · , ) VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303) · Excellent Safe Operating Area - 200 Watt dc Power Rating to 30 Vdc (2N5303) · Complements to PNP 2N4398, 2N4399 and 2N5745 20 AND 30 AMPERE POWER , circuits applications. High-Power NPN Silicon Transistors 2N5301 2N5302 2N5303 SEMICONDUCTOR
Motorola
Original
108 motorola transistor

2N5301

Abstract: 2N5303 5 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS FEBRUARY 1969 - REVISED OCTOBER 1984 , Collector Current (2N5301, 2N5302) 20 A Continuous Collector Current (2N5303) 50 A Peak Collector Current , ~70PTÃ">-62C 36594 D T" 33-/S- 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS electrical , 2N5303 UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX vIBR)CEO lc = 0.2 A, Ib = 0, See Note 5 40 60 80 V , 9&1726 TEXAS INSTR (OPTO) 62C 36595 T-3S-/S- 2N5301,2N5302,2N5303 N-P-N SILICON POWER TRANSISTORS INPUT
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OCR Scan
2N6303 9S1726 7S265

2N5302

Abstract: V ce = rated V qeo lc = 200 mA for 2N4398, 2N5301 for 2N4399, 2N5302 for 2N5745, 2N5303 > lc = 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lG = 20 A lB = 2 A for 2N4398/99, 2N5301/2 lc = 20 A lc = 4 A for 2N5745, 2N5303 S T 7 SGS-THOMSON â' â ! 1 Typ. 40 60 80 lG = 10 A lB = 1 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lc ° 15 A I b = 1.5 A for 2N4398/99, 2N5301/2 for 2N5745, 2N5303 lc = 20 A lB = 2 A for 2N4398/99, 2N5301/2 lc =
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OCR Scan
2N4398/9 GQS1334

2N5301

Abstract: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS 3 J CD H FOR , 2N5303 ` Collector-Base V o lta g e , fc · 1 5.2ii TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS ` , , 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS thermal characteristics | 1 PA R A M , 2 2 2 5-213 TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYP
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OCR Scan
1EA05
Showing first 20 results.