2N5152 MIL-PRF-19500 2N5152J 2N5152JX 2N5152JV 2N5152JS MIL-STD-750

Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · High-speed power switching

2N5152 2N5152 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · High-speed power switching · Low power · PNP silicon transistor · Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E · JAN level (2N5152J 2N5152J) · JANTX level (2N5152JX 2N5152JX), · JANTXV level (2N5152JV 2N5152JV) · JANS level (2N5152JS 2N5152JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 MIL-STD-750 method 2072 for JANTXV and JANS Features · Radiation testing (total dose) upon request · · · · Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9701 Reference document: MIL-PRF-19500/544 MIL-PRF-19500/544 Benefits · Qualification Levels: JAN, JANTX, JANTXV and JANS · Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25°C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 80 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 5.5 Volts IC 2 A 1 5.7 11.8 66.7 175 15 W mW/°C W mW/°C -65 to + 200 °C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC PT PT Thermal Resistance RJA RJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright 2002 Rev. D °C/W Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5152 2N5152 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Emitter Cutoff Current ICEX Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Min IC = 100 mA ICEO Collector-Emitter Cutoff Current Test Conditions Typ On Characteristics Units Volts 50 µA 500 µA 1 1 1 1 µA mA µA mA 80 VCE = 40 Volts VCE = 60 Volts, VEB = 2 Volts, TA = 150°C VCE = 60 Volts VCE = 100 Volts VEB = 4 Volts VEB = 5.5 Volts ICES1 ICES2 IEBO1 IEBO2 Max Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 50 mA, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 2.5 A, VCE = 5 Volts TA = -55°C VCE = 5 Volts, IC = 2.5 A IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA IC = 2.5 A, IB = 250 mA IC = 5 A, IB = 500 mA Min 20 30 20 15 Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCE = 5 Volts, IC = 100 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, f = 1 MHz Min Typ Max Units 90 1.45 1.45 2.20 0.75 1.50 Volts Volts Volts Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ Max Units 250 pF 1.4 0.5 0.5 1.5 µs 6 20 Switching Characteristics Storage Time Fall Time Saturated Turn-On Time Saturated Turn-Off Time Copyright 2002 Rev. D ts tf tON tOFF IC = 5 A, IB1=IB2 = 500 mA, VBEoff = 3.7 Volts, RL = 6 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2