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Part : 2N5109UBJAN Supplier : Semicoa Semiconductors Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : JAN2N5109 Supplier : Microsemi Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : JANS2N5109 Supplier : Semicoa Semiconductors Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : JANS2N5109UB Supplier : Semicoa Semiconductors Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2N5109 Supplier : Central Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $1.71 Price Each : $1.71
Part : 2N5109 Supplier : Central Semiconductor Manufacturer : Future Electronics Stock : 688 Best Price : $1.77 Price Each : $4.39
Part : 2N5109 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 7 Best Price : $3.36 Price Each : $3.36
Part : 2N5109 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 213 Best Price : - Price Each : -
Part : JANTX2N5109UB Supplier : Microsemi Manufacturer : NexGen Digital Stock : 148 Best Price : - Price Each : -
Part : JANTXV2N5109UB Supplier : Microsemi Manufacturer : NexGen Digital Stock : 100 Best Price : - Price Each : -
Part : 2N5109 Supplier : Microsemi Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : 2N5109JANTX Supplier : Microsemi Manufacturer : Chip1Stop Stock : 50 Best Price : $110.1200 Price Each : $116.9400
Part : JANTX2N5109 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 46 Best Price : $97.2000 Price Each : $131.00
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2N5109 Datasheet

Part Manufacturer Description PDF Type
2N5109 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
2N5109 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original
2N5109 Central Semiconductor Small Signal Transistors Original
2N5109 Central Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 20V 400MA TO-39 Original
2N5109 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
2N5109 Semico NPN transistor Original
2N5109 Semico Chip: geometry 1007 polarity NPN Original
2N5109 SunLED USA silicon transistors UHF/VHF power transistors Original
2N5109 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5109 Bharat Electronics UHF / VHF RF Transistors Scan
2N5109 Diode Transistor NPN Small Signal Transistors Scan
2N5109 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N5109 General Transistor Transistors for RF Applications Scan
2N5109 Motorola The European Selection Data Book 1976 Scan
2N5109 Motorola European Master Selection Guide 1986 Scan
2N5109 Motorola Power Transistor Selection Guide Scan
2N5109 N/A Transistor Shortform Datasheet & Cross References Scan
2N5109 N/A Basic Transistor and Cross Reference Specification Scan
2N5109 N/A Shortform Transistor PDF Datasheet Scan
2N5109 N/A Transistor Replacements Scan
Showing first 20 results.

2N5109

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: dBmV = 1 millivolt * In accordance with JEDEC registration data 119 2N5109-File IMo. 281 j50 Fig.2-input reflection coefficient (Sj je) vs. frequency for type 2N5109. COLLECTOR-TO-EMITTER VOLTS (VCE) = 15 CASE , . 1 -Gain-bandwidth i/s. collector current for type 2N5109. ¡0 I40 92LS-2I6BR2 118 11-73 File No , -Magnitude of common-emitter forward transfer coefficient (S21e) vs- frequency for type 2N5109. 0 0.2 0.4 0.6 , ($21 eI frequency for type 2N5109. 120 File No. 281 2N5109 j 250 - j250 - j I50 -j50 92SS-4425 -
OCR Scan
RCA-2N5109 TA2800 rca 2N5109 2n5109 rca CF-102-Q1 2NS109-
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. http://store.americanmicrosemiconductor.com/2n5109.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N5109 2N5109 RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , : Americanmicrosemi 2N5109 $ 2.24 Information Spec Sheets Tutorials Shipping FAQs $ 1.79 $ 0.45 Total Price American Microsemiconductor
Original
transistor 2N5109
Abstract: 3QE » 7^2=1237 Q 0 312E5 T ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a oe @ |L i O r a ( ô ) [ M D O i Y T ^ s - thom son 2N5109 EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial NPN , V A A W W °C 1/3 407 VcEO V ebo lc Ib Plot Tstg. Tj October 1988 2N5109 S G S -T H , Current Gain. 0Q 31227 3 2N5109 T-31-23 Power Gain vs. Collector Current. f =200MHz V ,= 1 5 -
OCR Scan
2N5109 SGS Max17550 transistor Z2 200MH
Abstract: 2N5109 SILICON NPN RF TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO , Corp. 2N5109 NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3 , GEOMETRY GROSS DIE PER 4 INCH WAFER 44,460 PRINCIPAL DEVICE TYPES 2N5109 B E EPITAXIAL PLANAR 16 x 16 Central Semiconductor
Original
2n5109 transistor chip die npn transistor NPN transistor marking NY transistor marking code AL VCE-15V CP214
Abstract: (1) Derate above 25ºC Note 1. Total Device dissipation at TA = 25ºC is 1 Watt. 2N5109.PDF , Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N5109.PDF 3-10-99 Typ. Max. Unit - , .535 33 .246 140 1000 .655 95 1.02 9.8 .604 35 .320 122 2N5109.PDF , Plastic Package Options 1 1 1 8 2 1 4 2N5109.PDF 3-10-99 1 MACRO X RF (Low , General Purpose RF Discrete Selector Guide Power Macro SO-8 2N5109 2N5109.PDF 3-10-99 Microsemi
Original
for transistor bfr96 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ MRF951 MRF571 BFR91 BFR90 MRF545 MRF544
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions , 1200 - MHz 2N5109 FUNCTIONAL Symbol Test Conditions Value Min. G U max MAG , MSC1304.PDF 10-25-99 2N5109 10 15 12 1200 3.4 30 15 11.4 1000 30 400 , (dB) NPN MRF5943C NF (dB) NF IC (mA) NF VCE 2N5109 TO-39 Type TO-39 400 Microsemi
Original
MRF559 2N4427 MRF4427 RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 RF NPN POWER TRANSISTOR 2.5 GHZ UHF power TRANSISTOR PNP TO-39 MRF5812 2N3866A MRF904
Abstract: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , REVERSE SIDE) R1 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C Central Semiconductor
Original
Abstract: 2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage , =15V, IC=10mA, f=200MHz VCE=15V, IC=50mA, f=200MHz 40 40 20 R4 (7-June 2011) 2N5109 SILICON NPN RF Central Semiconductor
Original
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN, To , dissipation at TA = 25ºC is 1 Watt. 053-7004 Rev - 9-2002 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25 , 2N5109 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain , -30 -35 -46 -76 -94 -115 -145 176 140 122 053-7004 Rev - 9-2002 2N5109 RF Low Power PA, LNA , T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C 2N5179 2N2857 MRF517 Advanced Power Technology
Original
RF NPN POWER TRANSISTOR 1000 WATT TRANSISTOR 12 GHZ MRF555T MRF8372 MRF557 MRF557T
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , . Collector Maximum Unilateral Gain = 12dB (typ) @ 200 MHz TO-39 DESCRIPTION: The 2N5109 is a , factory direct. 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus , Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit MHz 2N5109 , website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 0.5 10 65 7.5 Advanced Power Technology
Original
MRF553 MRF607 2N6255 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ macro x power transistor MRF581A MRF555 MRF553T
Abstract: ¿888888888 p |M iwi B f i HBf s sssBP e m .f rHHHHHHHH h. M m 1 itittnnnnn h hhhhhk. > >itH , Temperature Storage Temperature ¡¡I S G lH F IiC O fR SgdL Data Sheet No. 2N5109 SeMICONDUCTORS -
OCR Scan
MIL-PRF-19500/453
Abstract: MOTOROLA TECHNICAL DATA 2N5109 The R F Lin e 1.2 GHz @50 mAdc NPN SILICO N H IG H -FR EQ , 2N5109 E L E C T R IC A L C H A R A C T E R IS T IC S C h aracteristic O F F C H A R A C T E R I S T IC , MOTOROLA RF DEVICE DATA 2-45 2N5109 F I G U R E 3 - C U R R 6 N T - G A IN - B A N D W ID T H P R O , DEVICE DATA 2-46 2N5109 F IG U R E 7 - IN P U T A D M IT T A N C E versus F R E Q U E N C Y F , L E C T O R C U R R E N T (m A dcl MOTOROLA RF DEVICE DATA 2-47 2N5109 F IG U R E 13 - O U -
OCR Scan
2N5109 motorola
Abstract: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: · VHF-UHF amplifier silicon transistor. · Housed in TO-39 case. · Also available in chip form using the 1007 chip geometry. · The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases , Operating Junction Temperature Storage Temperature o C o C Data Sheet No. 2N5109 Semicoa Semiconductors
Original
19500/453 2N5109 JAN
Abstract: 1988_-j/3 407 2N5109_ S G S-thomson_ 3QE » H 7WZ37 0Q3122b 1 â  T-31-23 THERMAL , 30E D â  7TET237 0031225 T T' SCS-THOMSON OOMmLUOTI^ÃlMDÃl_2N5109 Y G S-THOMSON EPITAXIAL PLANAR NPN CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR The 2N5109 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is designed for CATV-MATV amplifier applications , Transfer Coefficient Si2e. 30" T-37-23 Power Gain vs. Collector Current. 2N5109 f =200MHz V,p -
OCR Scan
multi-emitter transistor P15V 0Q3122 2TS37
Abstract: DATA SHEET 2N5109 NPN SILICON RF TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base , (Continued) R2 2N5109 NPN SILICON RF TRANSISTOR TO-39 PACKAGE - MECHANICAL OUTLINE A B D C E Central Semiconductor
Original
Abstract: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage SYMBOL VCBO 40 , 0.5 150 MHz 3.5 3.0 11 pF dB dB R3 (23-June 2005) Central TM 2N5109 Central Semiconductor
Original
Abstract: 39 ohm +15 VDC 1 uf + RFC ( 1000 uh / Freq. in MHz ) L1 L2 10 ohm C1 Out Q1 13 dBm FD 700 1000 pf C2 C3 Freq. P out C1 C2 C3 L1 L2 Q1 RFC 30 MHz 30 dBm 150 pf 15 pf 39 pf 1.5 uh 1.2 uh 33 uh 2N5109 100 MHz 24 dBm 68 pf 10 pf none .82 uh .47 uh 10 uh 2N5109 200 MHz 30 dBm 33 pf 10 pf none .47 uh .27 uh 5.6 uh MRF227 One Watt Class-C Amplifier The FD700 diode keeps the duty-cycle near 50% for good efficiency for a wide range of input power levels. - -
Original
100 uH Diode C3 uH33 C3 DIODE
Abstract: 4b E D h3b?2S4 OOcmOb b 1 flOTb T -3 3 -n 2N5109 MOTOROLA TECHNICAL DATA SEM ICONDUCTOR MOTOROLA SC (XSTRS/R F) The RF Line 1.2 GHz © 50 mAdc NPN SILICON , M P R - C A S E 79-04 TO-205AO (TO-39) MOTOROLA RF DEVICE DATA 2-44 I 2N5109 MbE D , ) i c ,COLLECTOR CURRENT imAdd NJ 2N5109 MOTOROLA SC (XSTRS/R F) 4bE ]> b3b75S4 x - 3 3 - n , b3b?554 QQ'JMO?! S ttOTb 2N5109 T-S3-U F IG U R E 18 - F O R W A R D T R A N SM IS SIO N -
OCR Scan
c0851
Abstract: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 -
OCR Scan
2N5829 2N5031 2N5032 MRF901 MRF911 BFR96 MRF531 2n3866 noise MFR901 BFR90 amplifier 2N4958 MRF902
Abstract: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 , T072 2N6305 5/2-10 1200 5.5/450 T072 BFX89 - 1200 6.5/500 T072 2N5109 15/10-50 1200 3.0 -
OCR Scan
MM4049 2N5835 2N3960 MHW562 MHW570 MHW580 MOTOROLA 2N5179 BFR90 MOTOROLA 2N5836 2N584I 2N5841
Abstract: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF , 10-25-99 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions , 1200 - MHz 2N5109 FUNCTIONAL Symbol Test Conditions Value Min. G U max MAG , MSC1304.PDF 10-25-99 2N5109 10 15 12 1200 3.4 30 15 11.4 1000 30 400 , (dB) NPN MRF5943C NF (dB) NF IC (mA) NF VCE 2N5109 TO-39 Type TO-39 400 -
OCR Scan
2N 5109 B5/100
Abstract: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 , T072 2N6305 5/2-10 1200 5.5/450 T072 BFX89 - 1200 6.5/500 T072 2N5109 15/10-50 1200 3.0 -
OCR Scan
LA 4440 IC LA 4127 IC LA 4127 t 3866 power transistor ic la 4440 2N3927 T0-60CE 25PEP 20PEP 40PEP 80PEP
Abstract: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage SYMBOL VCBO 40 , 0.5 150 MHz 3.5 3.0 11 pF dB dB R3 (23-June 2005) Central TM 2N5109 -
OCR Scan
transistor amplifier 5v to 15v
Showing first 20 results.