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1 - 50 of about 185 for 2N5088 |
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First line: 5089 silicon npn transistor 2n5088 transistor 2N5089 equivalent 2N5088 equivalent 2N5088/5089 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 2N5088: 2N5089: Collector Dissipation: (max)=625mW Abstract: .. 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089 2N5089 : 25V. • Collector Dissipation: PC max =625mW 625mW . ABSOLUTE MAXIMUM RATINGS .. Tags: 2n5088 transistor 5089 silicon npn transistor transistor 2n5088 equivalent transistor 2N5088 characteristics of 2N5088 2N5089 NPN 2N5089 equivalent 2n5088 transistor 2N5088 equivalent 2N5088 2N508* 2N4403 2N5088 2N5089 |
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First line: 2n5088 transistor 2N5088/5089 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCeo 2N5088: 2N5089: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 Abstract: .. 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR †Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089 2N5089 : 25V †Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088/2N5089 EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER DESCRIPTION device designed noise, high gain, general purpose amplifier applications collector currents from 50mA. Abstract: .. UTC 2N5088/2N5089 2N5089 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040 ,A. NPN GENERAL PURPOSE AMPLIFIER. DESCRIPTION The device is designed for low noise, high .. Tags: 2n5088 transistor transistor 2N5088 characteristics of 2N5088 2N5088 equivalent 2n5088 2N5088 2N5089 |
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First line: 2N5089 NPN 2N5088 equivalent 2N5088/2N5089 EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER DESCRIPTION device designed noise, high gain, general purpose amplifier applications collector currents from 50mA. Abstract: .. UTC 2N5088/2N5089 2N5089 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040 QW-R201-040 ,A. NPN GENERAL PURPOSE AMPLIFIER. DESCRIPTION The device is designed for low noise, high .. Tags: 2N5089 NPNÂ transistor 2N5088 2N5089 NPN 2N5088 equivalent 2n5088 2N5088 2N5089 |
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First line: transistor 2N5086 2N5086 2N5087 2N5088 2N5089 SILICON NOISE SMALL SIGNAL TRANSISTORS 2N5086, 2N5087 (PNP) 2N5088; 2N5089 (NPN) SILICON PLANAR EPITAXIAL TRANSISTORS NOISE PREAMPLIFIER CIRCUITS. CASE T0-92A ABSOLUTE MAXIMUM RATINGS voltage current v.Ium Collector-Base Voltage Collector-Emitter Voltage Abstract: .. 1 I 2N5086 2N5086 2N5087 2N5087 2N5088 2N5089 2N5089 PNP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS THE 2N5086 2N5086 , 2N5087 2N5087 PNP AND 2N5088; 2N5089 2N5089 NPN ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÄF .. Tags: transistor 2N5086 datasheet abstract.. |
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First line: transistor 2n5088 equivalent 2N5089 power ST transistor 2N5087 2N5088 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, thes Abstract: .. ST 2N5088 / 2N5089 2N5089 . NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2N5088 equivalent 2N5087 ST transistor 2N5089 power transistor 2n5088 equivalent 2N5089 NPN 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2N5088 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured different configurations. Absolute M Abstract: .. ST 2N5088 / 2N5089 2N5089 . NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2N5088 equivalent characteristics of 2N5088 2N5089 equivalent 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2N5088 equivalent 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 / MMBT5088 MMBT5088 / 2N5089 2N5089 / MMBT5089 MMBT5089 . 2N5088 2N5089 2N5089 . MMBT5088 MMBT5088 MMBT5089 MMBT5089 . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications .. Tags: 2N5088 equivalent 2n5088 2N5088 2N5089 |
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First line: 2n5089 equivalent ST transistor 2N5088 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured diff Abstract: .. ST 2N5088 / 2N5089 2N5089 . NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2N5088 equivalent ST transistor 2n5089 equivalent 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2N5088 equivalent ST transistor 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured different configuratio Abstract: .. ST 2N5088 / 2N5089 2N5089 . NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: ST transistor 2N5088 equivalent 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2N5088 equivalent Amplifier Transistors Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol 2N5088 2N5089 2N5089 Unit. Collector‐Emitter Voltage VCEO 30 25 Vdc. Collector‐Base Voltage VCBO 35 30 Vdc. Emitter‐Base Voltage VEBO .. Tags: 2N5088 equivalent 2n5088 2/2N5088* datasheet abstract.. |
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First line: 2n5088 transistor SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 200 400 150 ■■Mi ■■■■ 150 15 200 4.0 500 360 103 Silicon Transistors I----1 I F= I I----1 2N5088 2N5089 2N5089 V The General Electric 2N5088 and 2N5089 2N5089 are Silicon NPN Planar Epitaxial Passivated Transistors .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089 2N5089 . Amplifier Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector - Emitter Voltage 2N5088 2N5089 2N5089 . VCEO. 30 25. Vdc .. Tags: 2N5088 equivalent 2n5088 transistor 2N5089 equivalent 2n2089* 2N5088 2N5089 |
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First line: 2N5088G 2n5088 transistor 2/2N5088* 2N5088 equivalent 2n2089* 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089 2N5089 . Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5088 2N5089 2N5089 . VCEO. 30 25. Vdc .. Tags: 2N5088 equivalent 2/2N5088* 2n5088 transistor 2N5088G 2n2089* 2N5088 2N5089 |
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First line: 2N5088 equivalent SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 Abstract: .. NPN SILICON EPITAXIAL TRANSISTORS 2N5088. 2N5089 2N5089 TO-92 TO-92 CBE. Amplifier Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 2N5089 UNITS. Collector -Base Voltage VCBO 35 30 V. Collector .. Tags: 2N5088 equivalent 2N5088 2N5089 |
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First line: 2N5088 USHA (INDIA) AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCeo 2NS088: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Transistors 2N5088 USHA INDIA LTD AMPLIFIER TRANSISTOR †Collector-Emitter Voltage: VCeo = 2NS088 2NS088 : 30V †Collector Dissipation: Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25 C .. Tags: datasheet abstract.. |
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First line: 2N5088 equivalent SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 Abstract: .. NPN SILICON EPITAXIAL TRANSISTORS 2N5088. 2N5089 2N5089 TO-92 TO-92 CBE. Amplifier Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 2N5089 UNITS. Collector -Base Voltage VCBO 35 30 V. Collector .. Tags: 2N5088 equivalent 2N5088 2N5089 |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089 2N5089 . Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5088 2N5089 2N5089 . VCEO. 30 25. Vdc .. Tags: 2N5088 equivalent 2n5088 transistor 2n2089* 2N5088 2N5089 |
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First line: 2n5088 transistor AMER PHIIPS/DISCRETE ------ bbS-3131 001750b 2N5088 2N5089 T-a^-ai SIICON PANAR EPITAXIA TRANSISTOR N-P-N small-signal transistor plastic TO-92 envelope intended low-noise stages audio equipment. Complementary types 2N50S6/2N5087. QUICK REFERENCE DATA Abstract: .. N AMER PHILIPS/DISCRETE I ÃŽ L ------ SSE D â– bbS-3131 bbS-3131 001750b 001750b 7 L 2N5088 2N5089 2N5089 T-a^-ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 TO-92 envelope intended .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: TO-92 SOT-23 Mark: General Purpose Amplifier Abstract: .. Symbol Parameter Value Units VcEO Collector-Emitter Voltage 2N5088 30 V 2N5089 2N5089 25 V VcBO Collector-Base Voltage 2N5088 35 V 2N5089 2N5089 30 V Vebo Emitter-Base Voltage 4.5 V lc Collector Current - Continuous .. Tags: datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5089 MOTOROLA Order this document 2N5088/D Amplifier Transistors Abstract: .. Collector ‐ Emitter Breakdown Voltage 2 IC = 1.0 mAdc, IB = 0 2N5088. 2N5089 2N5089 . V BR CEO. 30 25. — — Vdc. Collector ‐ Base Breakdown Voltage IC = 100 Adc, IE = 0 2N5088. 2N5089 2N5089 . V BR CBO. 35 30. — — Vdc. Collector .. Tags: 2N5088 equivalent 2n5088 transistor 2N5089 MOTOROLA 2N508 2/2N5088* 2N5088 |
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First line: 2N5089 NATIONAL SEMICONDUCTOR National 2N5088 2N5089 MMBT5088 MMBT5089 TO-92 General Purpose Amplifier This device designed noise, high gain, general purpose amplifier applications collector currents from Sourced from Process Absolute Maximum Ratings* Abstract: .. National Semiconductor Discrete POWER & Signal Technologies 2N5088 2N5089 2N5089 MMBT5088 MMBT5088 MMBT5089 MMBT5089 TO-92 TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose .. Tags: 2N5089 NATIONAL SEMICONDUCTOR datasheet abstract.. |
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First line: 2n 5088 transistor c 5088 /lit EWU') POWER SEMICONDUCTOR 2N5088/5089 MMBT5088/5089 SMALL SIGNAL TRANSISTORS Noise High Gain Epitaxial Planar Construction Available both Through-Hole Surface Mount Packages General Purpose, Noise Amplifier MMBT5088 MMBT5089 Abstract: .. VISHAY /lit EWU' I POWER SEMICONDUCTOR / 2N5088/5089 / MMBT5088 MMBT5088 /5089 NPN SMALL SIGNAL TRANSISTORS Features Low Noise High Gain Epitaxial Planar Die Construction Available in both Through .. Tags: c 5088 2n 5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor mps8097 SAMSUNG SEMICONDUCTOR 17*^4142 000735b MPS8097 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Veso Abstract: .. 625 mW Junction Temperature Tj 150 Â C Storage Temperature Tstg -55-150 Â C Refer to 2N5088 for graphs ELECTRICAL CHARACTERISTICS Ta=25Â C Characteristic Symbol â– Test Conditions Min Typ .. Tags: mps8097 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5210 USHA (INDIA) AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo= Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Temperature Tj 150 "C Storage Temperature Tstg -55-150 Â C 1 Refer to 2N5088 for graphs ELECTRICAL CHARACTERISTICS Ta=25Â C Characteristic Symbol Test Condition Min Typ Max Unit Collector .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089 2N5089 . MMBT5088 MMBT5088 MMBT5089 MMBT5089 . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: 2N5088 equivalent 2n5088 transistor 5088 2N5088 2N5088 2N5089 |
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First line: 2n5088 transistor PIER PHILIPS/DISCRETE bbS3T31 GOSfllbS Dfi? 2N5088 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR small-signal transistor plastic TO-92 envelope intended low-noise stages audio equipment. Complementary type 2N5086. QUICK REFERENCE DATA Collector-emitter voltage (open base) vCE0 max. Col Abstract: .. N A PIER PHILIPS/DISCRETE blE D â– bbS3T31 bbS3T31 GOSfllbS Dfi 2N5088 IAPX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 TO-92 envelope intended for low-noise stages .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5210 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= Collector Dissipation: (max)=625mW Abstract: .. • Refer to 2N5088 for graphs. ELECTRICAL CHARACTERISTICS TA=25 Pulse Test: Pulse Width 300 , Duty Cycle 2% Characteristic Symbol Rating Unit. Collector-Base Voltage Collector-Emitter Voltage .. Tags: 2N5088 equivalent 2n5088 transistor 2n5210 equivalent 2N5210 datasheet 2N5210 |
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First line: 2n5088 transistor 2N5088 equivalent book, halfpage M3D186 Abstract: .. 2N5088 NPN general purpose transistor book, halfpage M3D186 M3D186 1997 Sep 03 2 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES • Low current .. Tags: 2N5088 equivalent 2n5088 transistor TO outline for 2N5088 ic str 6707 datasheet abstract.. |
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First line: c 5088 2n5088 transistor N5088/89 MMBT5088/89 powersemiconductor SMALL SIGNAL TRANSISTOR Noise High Gain Epitaxial Planar Construction Available both Through-Hole Surface Mount Packages General Purpose, Noise Amplifier MMBT5088 MMBT5089 Abstract: .. j M 2N5088 / 2N5089 2N5089 h H I-M bottom [C B ei view i ††! I_11 ^ I „ 11_I HHH LI SOT-23 SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 .. Tags: 2n5088 transistor c 5088 datasheet abstract.. |
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First line: 2N4338 "Siliconix" "JFETs" "Dual" "Siliconix" "JFET" "Dual" datasheet j201 jfet N CHANNEL jfet Low Noise Audio Amplifier AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances With highe Abstract: .. TA = 25C Bipolar 2N5088/2N930 2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930 2N930 . 2N5088. 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 10-Mar-97 10-Mar-97 . The optimum lowest .. Tags: datasheet j201 jfet "Siliconix" "JFET" "Dual" "Siliconix" "JFETs" "Dual" 2N4338 transistor jfet power Junction FET POWER JFET p jfet N CHANNEL jfet Low Noise Audio Amplifier jfet transistor jfet n channel ultra low noise JFET application note J201 equivalent J201 hearing aid AN106 |
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First line: 2n5088 transistor 2N4393 2N5088 equivalent AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances With higher source impedances, common sensitive transducers, JFET amplifiers exhibit dr Abstract: .. TA = 25C Bipolar 2N5088/2N930 2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930 2N930 . 2N5088. 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 10-Mar-97 10-Mar-97 . The optimum lowest .. Tags: 2N5088 equivalent 2N4393 2n5088 transistor transistor jfet SST4393* power Junction FET POWER JFET p jfet N CHANNEL jfet Low Noise Audio Amplifier JFET Transistor jfet n channel ultra low noise hearing aid datasheet for jfet 2N4339 AN106 |
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First line: 6428A 2N6428/6428A AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEo= Collector Dissipation: Pc(max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vobo Collector-Emitter Voltage Vceo Abstract: .. Temperature Tj 150  C Storage Temperature Tstg -55 ~150  C †Refer to 2N5088 for graphs ELECTRICAL CHARACTERISTICS TA=25 C Characteristic Symbol Test Conditions Min Typ Max Unit Collector .. Tags: 6428A 2n5088 transistor 6428A* datasheet abstract.. |
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First line: 2n5088 transistor 2N5210 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCeo=50V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Abstract: .. Temperature Tj 150  C Storage Temperature Tstg -55-150  C †Refer to 2N5088 for graphs ELECTRICAL CHARACTERISTICS Ta=25 C Characteristic Symbol Test Condition Min Typ Max Unit Collector .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N6428/6428A EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo=50V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Vbltage Vceo Collector-Emitter Voltage VcEO Emitter-Base Voltage Vebo Abstract: .. Temperature Tj 150  C Storage Temperature Tstg -55 — 150  C ■Refer to 2N5088 for graphs TO-92 TO-92 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS Ta =25 C Characteristic Symbol .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N4393 AN106 Low-Noise JFETs Superior Performance Bipolars Junction field effect transistors continue outperform best bipolar transistors low-frequency noise source impedances With higher source impedances, common sensitive transducers, JFET amplifiers exhibit dr Abstract: .. TA = 25C Bipolar 2N5088/2N930 2N930 ‐ VCE = 5 V FET ‐ VDG = 10 V. 10 Hz 100 Hz 1 kHz. J/SST201 SST201 ‐4. 10 Hz. 1 kHz. 100 Hz 2N930 2N930 . 2N508 2N508 8. 1 0. 5. 2. 1. 100. 50. 20. 0.01 0.02 0.050.1 0.2 0.5 1 2. AN106 AN106 . 4 Siliconix. 26-Jul-94 26-Jul-94 . The optimum lowest .. Tags: 2N4393 2N5088 equivalent 2n5088 transistor transistor jfet SST404 power Junction FET POWER JFET p jfet N CHANNEL jfet Low Noise Audio Amplifier JFET Transistor jfet n channel ultra low noise JFET application note J/SST201 hearing aid AN106 |
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First line: 2n5088 transistor SAMSUNG SEMICONDUCTOR ?1b4l42 G0071T3 2N6428A EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo =50V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Refer 2N5088 graphs T-29-21 Characteristic Symbol Rating Unit Abstract: .. : Pc max =625mW 625mW ABSOLUTE MAXIMUM RATINGS Ta=25Â C 1 Refer to 2N5088 for graphs T-29-21 T-29-21 Characteristic ! Symbol Rating Unit Collector-Base \foltage 1 Vceo 60 V Collector-Emitter Voltage .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor SAMSUNG SEMICONDUCTOR 7^142 0007181 2N5089 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: =25V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Refer 2N5088 graphs T-29-21 Characteristic Symbol Rating Unit Abstract: .. ABSOLUTE MAXIMUM RATINGS Ta=25Â C ' Refer to 2N5088 for graphs T-29-21 T-29-21 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter \foltage VCEO 25 V Emitter-Base .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: SAMSUNG SEMICONDUCTOR 7^145 0007133 2N5210 EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR Collector-Emtter Voltage: Vceo =50V Collector Dsspaton: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characterstc Symbol Ratng Abstract: .. Pc 625 mW Junction Temperature Tj 150 Â C Storage Temperature Tstg -55-150 Â C Refer to 2N5088 or graphs ELECTRICAL CHARACTERISTICS Ta=25Â C Characteristic Symbol Test Conditions Mln Typ .. Tags: datasheet abstract.. |
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First line: 2n5088 transistor SAMSUNG SEMICONDUCTOR 2N6428 7^1,4142 00071^5 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Veto =50V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. 150 '  C Storage Temperature Tstg -55-150  C †Refer to 2N5088 for graphs ELECTRICAL CHARACTERISTICS Ta =25 C Characteristic Symbol Test Conditions Min iyp Max Unit Collector-Base .. Tags: 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089 2N5089 . MMBT5088 MMBT5088 MMBT5089 MMBT5089 . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: 2N5088 equivalent 2n5088 transistor cjc - CDP 007 5088 2N5088 2N5089 |
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First line: 2n5088 transistor 2N5088 equivalent 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089 2N5089 . MMBT5088 MMBT5088 MMBT5089 MMBT5089 . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: 2N5088 equivalent 2n5088 transistor 5088 2N5088 2N5089 |
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First line: 2n5088 transistor PN2484 MMBT2484 PN2484 MMBT2484 Abstract: .. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may .. Tags: 2n5088 transistor PN2484 MMBT2484 PN2484 |
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First line: bc547 philips bc557a NPN general purpose transistor BC337 equivalent for BC337* BC327 NPN transistor datasheet Small-signal Transistors LEADED DEVICES (continued) GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER 2N4126 2N5087 2PA733 2PA733K 2PA733P 2PA733Q 2PA1015 2PA1015BL 2PA1015GR 2PA1015Y BC177 Abstract: .. 2N5087 2N5087 TO-92 TO-92 50 100 500 250 >250 40 2N5088 173. 2PA733 2PA733 TO-92 TO-92 50 100 500 135 600 100 2PC945 2PC945 190. 2PA733K 2PA733K TO-92 TO-92 50 100 500 300 600 100 2PC945K 2PC945K 190. 2PA733P 2PA733P TO-92 TO-92 50 100 500 200 400 100 2PC945P 2PC945P 190. 2PA733Q 2PA733Q TO .. Tags: BC327 NPN transistor datasheet NPN general purpose transistor BC337 bc557a transistor BC548 Data Sheet transistor bc107b Transistor BC107 equivalent for BC337* bc558c datasheet BC556A BC548B PHILIPS BC548b npn* BC548 BC547C bc547 philips 2N4126 2N5087 |
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First line: 2n5088 transistor 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors manufactured different configurations. Absolute Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic .. Tags: 2n5088 transistor 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: 2n5088 transistor ST transistor 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors manufactured different configurati Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 TO-92 Plastic .. Tags: ST transistor 2n5088 transistor 2N5087 equivalent 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: bc107 transistor 2n5088 transistor BC108B bc108 TO-92 bc109b datasheet Small-signal Transistors LEADED DEVICES GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER 2N2484 2N4124 2N5088 2PC945 2PC945K 2PC945P 2PC945Q 2PC1815 2PC1815BL 2PC1815GR 2PC1815Y BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC Abstract: .. 2N5088 TO-92 TO-92 30 100 500 350 >350 50 2N5087 2N5087 175. 2PC945 2PC945 TO-92 TO-92 50 100 500 135 600 150 2PA733 2PA733 206. 2PC945K 2PC945K TO-92 TO-92 50 100 500 300 600 150 2PA733K 2PA733K 206. 2PC945P 2PC945P TO-92 TO-92 50 100 500 200 400 150 2PA733P 2PA733P 206. 2PC945Q 2PC945Q TO .. Tags: bc109b datasheet bc108 TO-92 2n5088 transistor bc107 transistor transistor bc107b Transistor BC107 equivalent for BC337* equivalent bc108b DATASHEET Transistor BC109 DATASHEET Transistor BC107 BC556A bc547 philips BC547 BC546 philips semiconductors BC546B BC546 2N2484 2N4124 2N5088 |
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First line: 2n5088 transistor 2N5210 datasheet 2n5210 equivalent 2N5210 2N5210 Abstract: .. See 2N5088 for characteristics. NOTES: 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications .. Tags: 2n5088 transistor transistor 2N5210 2n5210 equivalent 2N5210* 2N5210 |
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First line: 2n5088 transistor MPSA18 MPSA18 MPSA18 Abstract: .. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may .. Tags: 2n5088 transistor MPSA18* MPSA18 |
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First line: 2n5088 transistor Current Code Digitizer Technical Data BCC-0500 Abstract: .. 1 2N5088. 1 2N3904 2N3904 . 2 10 kΩ. 1 220 kΩ. 1 1.0 MΩ. 1 2.0 MΩ. 1 3.3 nF. 1 1.0 μF. 4-35. Recommended Schematic Shown is .. 2N5088. 75 pF. 0.1 μF. 6.8 MΩ. +5 V. 8. 1. 2 6. 2N4403 2N4403 . LED ANODE LED CATHODE. DETECTOR CATHODE. DETECTOR ANODE .. Tags: 2n5088 transistor 2N4403 Transistor Schematic Symbol 2N4403 Schematic symbol HBCC-0500 |
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