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2N5061 Central Semiconductor Corp Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3 visit Digikey Buy
2N5061 LEAD FREE Central Semiconductor Corp SCR 0.8A 60V TO-92 visit Digikey Buy

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Part : 2N5061 Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1639 Price Each : $0.1889
Part : 2N5061G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.0850 Price Each : $0.0940
Part : 2N5061RLRAG Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.21 Price Each : $0.2170
Part : 2N5061G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 3,065 Best Price : $0.22 Price Each : $0.22
Part : 2N5061RLRAG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,012 Best Price : $0.22 Price Each : $0.22
Part : 2N5061 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,330 Best Price : - Price Each : -
Part : 2N5061 Supplier : Motorola Manufacturer : ComSIT Stock : 4,985 Best Price : - Price Each : -
Part : 2N5061G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 355 Best Price : $0.12 Price Each : $1.5680
Part : 2N5061G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0890 Price Each : £0.3380
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2N5061 Datasheet

Part Manufacturer Description PDF Type
2N5061 Central Semiconductor Silicon Controlled Rectifiers - 0.8 To 110 Amperes Rms 15 To 1200 Volts Original
2N5061 Central Semiconductor SCRs - Single, Discrete Semiconductor Products, SCR 0.8A 60V TO-92 Original
2N5061 On Semiconductor THYRISTOR SCR 60V 10A 3TO-92 BOX Original
2N5061 On Semiconductor Thyristor 0.8A 50V; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000 Original
2N5061 On Semiconductor SCRs 0.8 AMPERES RMS 30 thru 200 VOLTS Original
2N5061 Teccor Electronics Thyristor, SCR, 60V Forward Blocking Voltage, 0.51A On-State Current, 5mA Holding Current, 0.8A RMS Current Original
2N5061 Teccor Electronics Cross Reference Data to Teccor Part Numbers (See datasheet appendix) Original
2N5061 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan
2N5061 Boca Semiconductor SCRs (Silicon Controlled Rectifiers) Scan
2N5061 Central Semiconductor Silicon Controlled Rectifiers Scan
2N5061 EIC Semiconductor Thyristors / SCRs Scan
2N5061 General Electric Semiconductor Data Handbook 1977 Scan
2N5061 Loras Industries SILICON CONTROLLED RECTIFIER,600V V(DRM),8A I(T),TO-202 Scan
2N5061 Motorola Motorola Semiconductor Datasheet Library Scan
2N5061 Motorola The European Selection Data Book 1976 Scan
2N5061 Motorola European Master Selection Guide 1986 Scan
2N5061 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5061 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan
2N5061 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N5061 N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

2N5061

Catalog Datasheet MFG & Type PDF Document Tags

2N5061

Abstract: 2n5060 thyristor MOTOROLA Order this document by 2N5060/D SEMICONDUCTOR TECHNICAL DATA 2N5060 2N5061 , 1000 ohms) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (All Conduction Angles) Symbol , © Motorola, Inc. 1995 1 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating Symbol , Current (Continuous dc)(4) *(Anode Voltage = 7 Vdc, RL = 100 Ohms) Min µs tq 2N5060, 2N5061 , 2N5060 2N5061 2N5062 2N5064 FIGURE 1 ­ MAXIMUM CASE TEMPERATURE 130 = CONDUCTION ANGLE 120
Motorola
Original
2n5060 thyristor 2N5060 MOTOROLA Motorola 2n5060 2N5060-D 2N5061/2N5061 2N5061/2N5062

2N5062

Abstract: 2N5061 Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 * â'¢Motorola preferred devices SCRs , 125»C) (RqK= 1000 ohms) 2N5060 2N5061 2N5062 2N5064 VDRM or VrrM 30 60 100 200 Volts On-State Current , best overall value. REV 1 3-2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM , Width = 50 (is, 0.1 % Duty Cycle, di/dt = 6 A/^s, dv/dt = 20 V/jis, Iqt = 1 mA) 2N5060,2N5061 2N5062 , measurement. Motorola Thyristor Device Data 3-3 2N5060 2N5061 2N5062 2N5064 CURRENT DERATING FIGURE 1 -
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OCR Scan
2N506 EB-30 motorola reverse blocking triode thyristor To92 thyristor motorola

2N5064

Abstract: 2N5062 Current - 5 mA Maximum Passivated Surface for Reliability and Uniformity 2N5060 2N5061 2N5062* 2N5064 , VoltageO) (T j = 25 to 125°C) (RGK = 1000 ohms) 2N5060 2N5061 2N5062 2N5064 O n-State C u rre n t RMS (All , -© M otorola, Inc. 1995 fM) x_- M O T O R O L A 2N5060 2N5061 2N5062 2N5064 , mA) Volts mA - - US td tr 3 0.2 - US 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt , in m easurement. 2 Motorola Thyristor Device Data 2N5060 2N5061 2N5062 2N5064 CURRENT
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OCR Scan

2NS061

Abstract: 2n5061 ity 2N5060 2N5061 2N5062* 2N5064* ·Motorola preferred devices SCRs 0.8 AMPERES RMS 30 thru 200 , and Reverse Blocking VoltageO ) ( T j » 25 to 125-C) (R q k - 1000 ohm s) 2N 5060 2N5061 2N 5062 2N , Data 2N5060 2N5061 2N5062 2N5064 MAXIMUM RATINGS - continued Rating 'O p e ra tin g Junction Tem , _ 5 10 mA ^s td tr 3 0.2 - \iS 2N 5060, 2N5061 2N 5062, 5063, 5064 dv/dt - 10 , 2N5061 2NS062 2N5064 PIQURE 6 - THERMAL RESPONSE t, TIME (SECONDS) TYPICAL CHARACTERISTICS -50
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OCR Scan
2NS061 2n 5064

SCR 2N5060 applications

Abstract: 2n5060 2N5060 Series ORDERING INFORMATION Device 2N5060 2N5060RLRA 2N5060RLRM 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5061RLRM 2N5062 2N5062RLRA 2N5064 2N5064RLRA 2N5064RLRM 2N5060RL1 Package TO-92 TO-92 TO-92 TO , ) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State , - 10 50 mA mA Symbol Min Typ Max Unit tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30
ON Semiconductor
Original
SCR 2N5060 applications SCR 2N5060 102c marking 2N5060-61 2N5062-64 BRD8011/D

2N5064

Abstract: N5062 ifo rm ity 2N5060 2N5061 2N5062* 2N5064* SCRs 0.8 A M PERES R M S 30 thru 200 VOLTS m or oK , Reverse Blocking Voltage, Note 1 (Tj = 25 to 125°C) (R q k = 1000 ohm s) 2N5060 2N5061 2 N5062 2N5064 , 5 10 - mA ms «q us 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt - _ - 10 30 30
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OCR Scan

2n5063 thyristor

Abstract: sm 6aa °C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current RMS (All Conduction Angles) ·Average On-State Current , Ohms) 2N5060 2N5061 2N5062 2N5063 2N5064 ' d r m . IRRM TC = 25°C T C = 125°C Vt M 'g t T C = 25°C T C , mA ¿IS tq JUS 2N5060, 2N5061 2N5062, 5063, 5064 dv/dt - - - 10 30 30 - - - V
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OCR Scan
2n5063 thyristor sm 6aa HI110T7 E6-30
Abstract: 2N5060 2N5061 2N5062 2N5064 Peak repetitive off-state voltage (1) (TJ = -40 to +110°C, sine wave , , IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 DYNAMIC CHARACTERISTICS Critical rate of rise of DIGITRON
Original
2N5060-2N5064 MIL-PRF-19500

2n5064g

Abstract: 2N5061 2N5060RLRA 2N5060RLRAG 2N5060RLRM 2N5060RLRMG 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062 2N5062G , 1 kW) 2N5060 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles , , IGT = 1 mA) mA V V tq mA ms ms - - 10 30 - - - 2N5060, 2N5061
ON Semiconductor
Original
2n5064g scr 2N5062 2N5060G 2N5064RLRAG 2N5061/2N60758 SCR 2N5061

SCR 2N5060 applications

Abstract: 2N5060 2N5060RLRAG 2N5060RLRM 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5061RLRM 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG , ) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) *Average On-State , Min Typ Max Unit tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - Voltage
ON Semiconductor
Original
2n5062 free

2N5060

Abstract: SCR 2N5060 2N5060G 2N5060RLRA 2N5060RLRAG 2N5060RLRM 2N5060RLRMG 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG , 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 80°C) IT , tq mA ms ms - - 10 30 - - - 2N5060, 2N5061 2N5062, 2N5064 30 -
ON Semiconductor
Original
asme y14.5m to-92 scr 2N5064 equivalent 2n5060 SCR VAK marking

2N5060

Abstract: SCR 2N5060 applications ORDERING INFORMATION Device 2N5060 2N5060G 2N5060RLRA 2N5060RLRAG 2N5060RLRM 2N5060RLRMG 2N5061 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062 2N5062G 2N5062RLRA 2N5062RLRAG 2N5064 2N5064RLRA 2N5064RLRM 2N5064RLRMG , °C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction , td tr tq ms 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - Voltage Current
ON Semiconductor
Original

BRX49

Abstract: 2N5061/2N5062 SCRS (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) 0.8 @ Tc (°C) 55 55 55 55 60 60 ITSM(AMPS) 6.0 6.0 6.0 6.0 10 10 CASE TO-18 TO-92 f TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 300 2N882 2N890 2N6564 BRX48 400 2N883
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OCR Scan
N6565 BRX49 BRX47 BRX49 2N6565 2N891

2N5061/2N5062

Abstract: BRX49 (Silicon Controlled Rectifiers) Metal/Plastic Packages Boca Semiconductor Corp. BSC onAmKer6S RMS http://www.bocasemi.com 15 to 1200 Volts F It (AMPS) 0.8 @ Tc (°C) 55 55 55 55 60 60 ITSM(AMPS) 6.0 6.0 6.0 6.0 10 10 CASE TO-18 TO-92 f TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 300
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OCR Scan
2N6564 BOCA 2N65 2N5061/BRX45

TA112

Abstract: ohm s, T q - * 125r ,C) 2N5060 2N5061 2N5062 2N5063 2N5064 On-State Current R M S (AH Conduction A , 2N5060 2N5061 2N5062 2N5063 2N 5064 ' d r m . Ir r m Tc Tc 25 C 125C Vt m - - - M ax 75 200 U n , flS 2N5060, 2N5061 2N5062, 5063, 5064 dv dt - - _ 10 30 30 - - - Forw ard
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OCR Scan
TA112

bry55

Abstract: 2N5061  Metal/Plastic Packages 0.5 to 100 Amperes RMS 25-800 Volts On-State (RMS) Current NOTE: Industry Standards, with 0.8 AMP 1.5 AMPS a variety of Custom Specifications and Leadforms available TC = 58°C Tc = 50°C / / Sensitive Gate LEAD FORM: (TO-18) Case 29-02 TO-226AA (TO-92) Style 10 BRX44/BRY55-30 2N5060 30 V BRX45/BRY55-60 2N5061 50 V BRX46/BRY55-100 MCR100-3 2N5062 MCR22-4 100 V BRX47/BRY55-200 MCR100-4 2N5064 200 V vdrm B RX49/ B R Y55-400 MCR100-6 MCR22-6 400 V
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OCR Scan
MCR100-7 MCR100-8 bry55 mcr100 BRY55-400 BRY55-200 RX49 BRY55-500 BRY55-600 MCR22-8

SCR 2N5060

Abstract: SCR 2N5061 2N5061RLRA 2N5061RLRAG For information on tape and reel specifications, including part orientation and , *40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 On-State Current , = 25°C TC = -40°C ms tq 2N5060, 2N5061 2N5062, 2N5064 - - 10 30 - - - , 2N5060RLRM TO-92 2,000 / Ammo Pack 2N5061 TO-92 5,000 Units / Box TO-92 (Pb-Free) 5,000 Units / Box TO-92 2,000 / Tape & Reel TO-92 (Pb-Free) 2,000 / Tape & Reel 2N5061RLRM
ON Semiconductor
Original

SCR 2N5060

Abstract: SCR 2N5060 applications ,000 / Tape & Reel Device 2N5060RLRAG 2N5061G 2N5061RLRA 2N5061RLRAG 2N5062G 2N5062RLRA , 2N5061 2N5062 2N5064 On-State Current RMS (180° Conduction Angles; TC = 80°C) IT(RMS) Value , mA) mA IGT TC = 25°C TC = -40°C ms tq 2N5060, 2N5061 2N5062, 2N5064 - - 10 , -92 (Pb-Free) 2,000 / Tape & Reel 2N5060RLRM TO-92 2,000 / Ammo Pack 2N5061 TO-92 5,000 , ) 2,000 / Tape & Reel 2N5061RLRM TO-92 2,000 / Ammo Pack 2N5062 TO-92 5,000 Units
ON Semiconductor
Original
2n*064

BRX49 equivalent

Abstract: 2N5064 equivalent SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 TO-92 Pinout CASE Pinout CGA TO-18 AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44* 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45* 100 2N879 2N887 2N3003 2N3007 2N5062
Central Semiconductor
Original
BRX49 equivalent 2N5064 equivalent BRX49 pinout 2n5062 datasheet free download
Abstract: SCRS (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts 0.8 IT (AMPS) 55 ITSM (AMPS) 55 55 55 60 60 6.0 @ Tc (°C) 6.0 6.0 6.0 10 10 11 TO-18 CASE TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 1(H) 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 -
OCR Scan

58930A2

Abstract: IC uc3843 e can e xce e d 40 v o lts . S h o u ld th is happen, a 2N5061 th y ris to r w h ic h is sensitive , assured by th e c o m b in a tio n o f th e MC34181 o p e ra tio n a l a m p lifie r and th e 2N5061 th y , Kohm 100 Kohm 150 Kohm 10 M ohm Transistors 2 MTP3055E 1 2N5061 PERFORMANCE A fte r having charged
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OCR Scan
EB126 58930A2 IC uc3843 58930-a2 ic UC3843 motorola IC uc3843 AN MOSFET uc3843 EB126/D C69740
Abstract: °C, Sine Wave, 2N5060 50 to 60 Hz, RGK = 1 kW) 2N5061 2N5062 2N5064 VDRM, VRRM On-State Current , tq ms â' â' 2N5060, 2N5061 2N5062, 2N5064 10 30 â' â' â' 30 â ON Semiconductor
Original
92/TO-226AA

LZ 173 relay

Abstract: specifications 2N1597 2N2345 7N1595, A C106F1 C107F1 C108F1 60 :!N878 C103YY 2N5061 C703YY - " - 100 7N870 c103a 2ND062 , * 2N5061 60 Volts* 60 Volts* 80 Volts* 2N5062 100 Volts* 100 Volts* 125 Volts* 2N5063 150 Volts* 150
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OCR Scan
2N2322-29 LZ 173 relay specifications 2N1597 2N5062 SILICON CONTROL RECTIFIER GE C106A1 scr C106 2N1597 specifications 2N877-81 2N5060-64 2N1595-99 II111I811S

TIC 160

Abstract: 2N5064 temperature 2NS060 2N5061 2N5062 2N5063 2N5064 UNIT TIC60 TIC61 TIC62 TIC63 TIC64 â'¢Repetitive Peak
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OCR Scan
TIC 160 thyristor tic 126 AGT Thyristor tic 120 TIC 160 D TIC45 AGK L-STD-202C TI145AO TI145A1 TI145A2

2N5060 equivalent

Abstract: 2N5064 equivalent 60 Hz, Gate Open) 2N5060 2N5061 2N5062 2N5064 Symbol VDRM, VRRM 30 60 100 200 IT(RMS) IT(AV) 0.51 , tr - - - - - - 200 350 0.8 1.2 Volts Volts - - 1.7 Volts µA tq µs 2N5060, 2N5061
ON Semiconductor
Original
2N5060 equivalent 2N5062 equivalent 2N5061 equivalent EQUIVALENT 2N5064 scr 2N5061 equivalent 226AA 64RLRA 64RLRM
Showing first 20 results.