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Part : 2N5039 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 75 Best Price : $3.96 Price Each : $4.73
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2N5039 Datasheet

Part Manufacturer Description PDF Type
2N5039 Microsemi NPN HIGH POWER SILICON TRANSISTOR Original
2N5039 On Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Original
2N5039 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Original
2N5039 Semico Silicon NPN Transistor Original
2N5039 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N5039 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan
2N5039 API Electronics Short form transistor data Scan
2N5039 API Electronics Short form transistor data Scan
2N5039 Boca Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan
2N5039 Crimson Semiconductor MULTIEPITAXIAL Transistors Scan
2N5039 Diode Transistor Transistor Short Form Data Scan
2N5039 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N5039 General Diode Transistor Selection Guide Scan
2N5039 General Electric High current, high power, high speed silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan
2N5039 Mospec POWER TRANSISTORS(20A,140W) - Pol=NPN / Pkg=TO3 / Vceo=75 / Ic=20 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan
2N5039 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N5039 Motorola European Master Selection Guide 1986 Scan
2N5039 Motorola Power Transistor Selection Guide Scan
2N5039 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N5039 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N5039

Catalog Datasheet MFG & Type PDF Document Tags

2N5038

Abstract: 2N5039 Qualified Level 2N5038 JAN JANTX JANTXV 2N5039 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N5038 2N5039 Units , Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841
Microsemi
Original
MIL-PRF-19500/

2N5038

Abstract: 2N5039 SavantIC Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , voltage VEBO CONDITIONS 2N5038 Emitter-base voltage 2N5039 2N5038 2N5039 Open emitter , 2N5039 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , CONDITIONS 2N5038 2N5038 V IC=12A ;IB=1.2A 2N5039 IC=10A ;IB=1A Collector-emitter , mA IC=12A ; VCE=5V IC=10A ; VCE=5V VCE=70V; IB=0 2N5039 VCE=55V; IB=0 Base-emitter on
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Original

2N5038

Abstract: r z 7 SCS-THOMSON ^ 7 # KfflOtgÅ"iLiûra®*! 2N5038 2N5039 HIGH CURRENT NPN SILICON TRANSISTOR . 2N5038 IS A SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5038 and 2N5039 are silicon , 2N5039 C ollector-B ase V oltage (I e = 0) 150 120 V V cE X C o lle cto r-E m itte r V , October 1995 5 A 140 W -65 to 200 °C 200 °c 1/5 2N5038/2N5039 THERMAL , 2N5038 fo r 2N5039 Vce = 70 V VCe = 55 V 20 20 mA mA I ebo E m itter C ut-off C urrent
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OCR Scan
2N5038/2N5039 N5038 P003N

2N5038

Abstract: transistor 2n5038 TECHNICAL DATA 2N5038 JAN, JTX, JTXV 2N5039 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N5039 Units VCEO VCBO VEBO IB IC PT 90 150 75 125 Vdc Vdc Vdc Adc Adc W TJ , VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978
New England Semiconductor
Original
transistor 2n5038 JAN 2N5038 MIL-PRF-19500/439

2n5038

Abstract: 2N5039 Back to Bipolar Power Transistors TECHNICAL DATA 2N5038 JAN, JTX, JTXV 2N5039 JAN, JTX, JTXV , VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 , Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 V(BR)CEO 90 75 7.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 Vdc V(BR)EBO 2N5038 2N5039 2N5038 2N5039 ICBO Vdc µAdc ICEO µAdc IEBO 2N5038 2N5039 ICEX µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978
New England Semiconductor
Original

2N5038

Abstract: 2N5039 Product Specification www.jmnic.com 2N5038/2N5039 Silicon NPN Power Transistors , CONDITIONS 2N5038 VCBO Collector-base voltage 90 Open base 2N5039 VEBO V 120 2N5038 Collector-emitter voltage Emitter-base voltage UNIT 150 Open emitter 2N5039 VCEO VALUE V 75 , Product Specification www.jmnic.com 2N5038/2N5039 Silicon NPN Power Transistors , voltage CONDITIONS 2N5038 MIN TYP MAX UNIT 90 IC=0.2A ;IB=0 2N5039 V 75
JMnic
Original
TO-3 140V 20A

2N5038

Abstract: 2N5039 VCE(SAT) ^ 2.5 V @ lc=20A MAXIMUM RATINGS Characteristic Symbol 2N5038 2N5039 Unit , u0 25 50 75 100 125 150 175 200 tc , temperature;0 c) NPN 2N5038 2N5039 20 AMPERE NPN , CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (1. = 200 mA, 1- = 0) 2N5038 2N5039 ^CEO(SUS) 90 , ) 2N5039 (Ves=100 V, V = 1.5 V, Tc = 150°C ) 2N5038 (VCE=85 V, VBB(off) = 1.5 V, Tc = 150°C ) 2N5039 'cEX 50 50 10 10 mA Emitter Cutoff Current (V-B = 5.0 V , lc = 0 ) 2N5038 2N5039 (VEB = 7.0V,IC = 0
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OCR Scan
2NS039

2N9038

Abstract: 2N5039 , JANTXV 2N5039 FEATURES â'¢ Collector-Base Voltage: up to 150V â'¢ Peak Collector Current: 30A â'¢ tOT , switching-control amplifiers. ABSOLUTE MAXIMUM RATINGS J*NTX JAN.JANTX fc JANTXV 1JANTXV 2N9038 2N5039 , °C for 10 seconds. JAN, JANTX, JANTXV 2N5038,2N5039 ins. mm a .875 max. 2.22 max. b .135 max. 0.34 , !» 76 UNITRODE JAN, JANTX & JANTXV 2N5038 JAN, JANTX & JANTXV 2N5039 Electrical Specifications (at 25°C unless noted) 2N5038 2N5039 Test Symbol MIN. MAX. MIN. MAX. Units Test Conditions D.C
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OCR Scan
2N503S 2N903 2N5039 JANTX JANTX 2N5039 JANTX 2N5038 MIL-S-19500/439 2N5Q38

2n5038

Abstract: 2N5039 Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , Open emitter 2N5039 VCEO VEBO CON EMI PARAMETER INC 2N5038 Collector-emitter , 2N5039 UNIT V 75 7 V IC Collector current 20 A ICM Collector current-peak , Inchange Semiconductor Product Specification 2N5038 2N5039 Silicon NPN Power Transistors , =1.2A 2N5039 IC=10A ;IB=1A Collector-emitter saturation voltage Base-emitter saturation voltage
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Original
2N5039 inchange

2N5038

Abstract: 2N5039 2N5038 2N5039 HIGH CURRENT NPN SILICON TRANSISTOR n 2N5038 IS A SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5038 and 2N5039 are silicon planar multiepitaxial NPN transistors in Jedec , Unit 2N5038 V CBO Collector-Base Voltage (I E = 0) 2N5039 150 120 V V CEX , W -65 to 200 o C 200 o C 1/5 2N5038/2N5039 THERMAL DATA R thj -ca se , est Con ditio ns for 2N5038 V CE = 140 V V CE = 100 V for 2N5039 V CE = 110 V V CE = 85 V Min
STMicroelectronics
Original
IC 555 DATASHEET OF IC 555 SGS-Thomson TRANSISTOR C 460 sgs 8 r 15

2N5038

Abstract: 2N5039 Qualified Level 2N5038 JAN JANTX JANTXV 2N5039 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N5038 2N5039 Units , Collector-Emitter Cutoff Current VBE = -1.5 Vdc VCE = 100 Vdc VBE = -1.5 Vdc VCE = 85 Vdc 2N5038 2N5039 2N5038 2N5039 ICBO 1.0 1.0 µAdc 2N5038 2N5039 ICEO 1.0 1.0 µAdc IEBO 1.0 µAdc ICEX 5.0 5.0 µAdc 2N5038 2N5039 6 Lake Street, Lawrence, MA 01841 1-800-446-1158
Microsemi
Original

2N5039

Abstract: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N 5038* 2N5039 , Amps *MAXIMUM RATINGS Symbol 2N5038 2N5039 Unit C o llector-B ase Voltage Rating , '" 2N5038 2N5039 lC = 12 AMPS lC = 10 AMPS IÃi = IÃ2 - 1.2 AMPS Ià i = IÃ2 = 1 -0 AMPS , use and best overall value. REV 7 © M otorola, Inc. 1995 ftf) M OTOROLA 2N5038 2N5039 â , Vdc V cE O (su s) 2N5038 2N5039 mAdc ICEX 2N5038 2N5039 2N5038 2N5039 â'" â'" â
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OCR Scan

2N5038

Abstract: 2N5039 @ lc=20A MAXIMUM RATINGS Boca Semiconductor Corp. (BSC) NPN 2N5038 2N5039 Characteristic Symbol 2N5038 2N5039 Unit Collector-Emitter Voltage vceo 90 75 V Collector-Base Voltage ^cbo 150 120 V , : //www. bo casemi. com http://www.bocasemi.com 2N5038, 2N5039 NPN ELECTRICAL CHARACTERISTICS (Tc = 25Â , Emitter Sustaining Voltage (1) (1. = 200 mA, 1- = 0) 2N5038 2N5039 ^CEO(SUS) 90 75 V Collector Cutoff Current (VCB=140 V, VBE(off, = 1.5 V) 2N5038 (Vcs=110 V, VBE)ff, = 1.5 V) 2N5039 (Ves=100 V, V = 1.5 V
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OCR Scan
2N6039 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND

2n5038

Abstract: 2n5039 industrial and commercial applications. 2N5038 * 2N5039 *ON Semiconductor Preferred Device · High , 2N5038 150 150 2N5039 120 120 Unit Vdc Vdc Vdc Adc Adc Collector­Base Voltage Collector­Emitter Voltage , IB2 = 1.2 AMPS 2N5039 IC = 10 AMPS IB1 = IB2 = 1.0 AMPS Figure 1. Switching Time Test Circuit , 0) VCEO(sus) Vdc 2N5038 2N5039 90 75 - - - - - - Collector Cutoff Current (VCE = 140 Vdc, VBE , = 0) ICEX mAdc 2N5038 2N5039 2N5038 2N5039 50 50 10 10 IEBO mAdc 2N5038 2N5039 Both - - - 5 15 50
ON Semiconductor
Original

2n5039

Abstract: 2n5038 2N5038* 2N5039 "Motorola Preferred Device 20 AMPERE NPN SILICON POW ER TRANSISTORS 75 and 90 VOLTS , 'b PD T j' Tstg 2N5038 150 150 7 20 30 5 140 0.8 -6 5 t o +200 2N5039 120 120 Unit Vdc Vdc Vdc Ade , Power Transistor Device Data 2NS038 2N5039 'E LEC TR IC A L CHARACTERISTICS (Tc 25 ° C unless , , Ib - 0) VCEO(sus) 2N5038 2N5039 'CEX 2N5038 2N5039 2N5038 2N5039 2N5038 2N5039 Both 'EBO 90 75 mAdc , 2N5038 2N5039 v CE(sat) VßE(sat) 20 20 - - 100 100 2.5 3.3 Vdc Vdc lhfel 12 - - V
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OCR Scan
2N5038 transistor

2N5038

Abstract: 2N5039 2N5039 ­5 V ­9 V 1N4933 PW = 20 µs DUTY CYCLE = 1% 0 +11 V 10 VCC + 30 V RC 2.5 , Symbol 2N5038 2N5039 Unit Collector­Base Voltage VCBO 150 120 Vdc , applications. *Motorola Preferred Device NPN Silicon Transistors 2N5038* 2N5039 SEMICONDUCTOR , THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C 2N5039 0.5 1 There are two limitations on the , = IB2 = 1 Adc) 2N5039 tf - 0.5 µs Collector­Emitter Saturation Voltage (IC = 20
Motorola
Original

2n5039

Abstract: 2n5038 0.8 - 6 5 t o +200 2N5039 120 120 Unit Vdc Vdc Vdc Ade ic 'CM 'B PD T j. Tstg Ade , AMPS 2N5039 lC = 10 AMPS > B 1=> B 2 = 10 amps Figure 1. Switching Time Test Circuit P referred , . 1995 ftf) M O TO R O LA 2N5038 2N5039 ` ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise , mAdc, \ q = 0) v CEO(sus) 2N5038 2N5039 'CEX 2N5038 2N5039 2N5038 2N5039 'EBO 2N5038 2N5039 Both 90 75 , = 5 Ade) hFE 2N5038 2N5039 v CE(sat) 20 20 - 100 100 2.5 Vdc v BE(sat) - 3.3
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OCR Scan

RCA-2N5038

Abstract: 2N5038 equivalent - Typical input characteristics for 2NS038 and 2N5039. IU ly 20 25 30 35 40 COLLECTOR-TO-EMITTER VOLTAGE , Vrcvlsusl «" acceptable when the traces fall to the right of point "A" for type 2N5039. point "B ' for type , _ 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar , -2N5038,2N5039 and 2N6496 are epitaxial silicon n-p-n planar transistors. They differ in breakdown-voltage , . (0.8 mm) from seating plane for 10 s max. 2N5038 2N5039 2N6496 vCBO 150 120 150 V VCEX(sus) 150
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OCR Scan
RCA-2N5038 2N5038 equivalent 2N6496 RCA 2N5039-1 AALI 2n5038 sol STATE111 92SS-S636 2N3678 2CS-22377R

2N5038 JANS

Abstract: 2N5038 , SILICON, HIGH-POWER, TYPES 2N5038 AND 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This , = +25°C W 2N5038 2N5039 VCBO VCEO VEBO IB IC TJ and TSTG V dc V dc V , = 2.0 A dc IC = 10 A dc (2N5039) Pulse Response IC = 10 A dc IB = 1.0 A dc f = 5 MHz IE = 0 100 kHz f 1MHz (2N5039) Min Max 15 ton toff V dc pF µs µs °C , (saturated) MIL-STD-750 Method Conditions 2N5039 3 Collector to emitter cutoff current 2N5038
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Original
2N5038 JANS qci sample 2N5039 JANS MIL-PRF19500 MIL-PRF-19500/439F MIL-PRF-19500/439E MIL-PRF-19500 JANHCA2N5038 JANHCA2N5039 JANKCA2N5038

U3540

Abstract: 2n5039 characteristics fo r 2N 5038and 2N5039. Fig. 7 - Maximum reverseras, second-breakdown characteristics fo r , 5039. Fig, 12 -Typica! de beta characteristics fo r 2N5039. C O L L E C T O R -T O -E M IT T E R , Typical o u tp u t characteristics fo r 2N5039. Fig. 18 - Typical in p u t characteristics fo r 2NS038 and 2N5039. 3 10 IS 20 29 90 35 COLLECTOR-TO-EMITTER VOLTAGE (VCE>- V 9 2 C S -2 2 8 0 I , 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR SbE ] > File Number 698 43G2271 GD4044fl
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OCR Scan
U3540 GD4044 22377R

2n5038

Abstract: FO152 3875081 G E SOLID STATE ^ 2N5038, 2N5039, 2N6496 High-Speed Power iransisiors , , 2N5039, 2N6496 ELECTRICAL CHARACTERISTICS, A t Case Temperature (Tq) = 25° C Unless Otherwise Specified , G E SOLID S T A T E ~ ^ 2N5038, 2N5039, 2N6496 D E ^ 3 Û 7 S 0 Û 1 dDlT-Liil < ` , p''2>3*, ' , 0017150 3 T " ' 3 `S " I 3 High Speed Power Transistors 2N5038, 2N5039, 2N6496 92CS-220I2 , . 123 3875081 G E SOLID STATE 2N5038, 2N5039, 2N6496 01 DE § 3fl?s0fll DD17151 5
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OCR Scan
FO152

2n5038

Abstract: C 5039 @ lc=20A MAXIMUM RATINGS Boca Semiconductor Corp. (BSC) NPN 2N5038 2N5039 Characteristic Symbol 2N5038 2N5039 Unit Collector-Emitter Voltage vceo 90 75 V Collector-Base Voltage ^cbo 150 120 V , : //www. bo casemi. com http://www.bocasemi.com 2N5038, 2N5039 NPN ELECTRICAL CHARACTERISTICS (Tc = 25Â , Emitter Sustaining Voltage (1) (1. = 200 mA, 1- = 0) 2N5038 2N5039 ^CEO(SUS) 90 75 V Collector Cutoff Current (VCB=140 V, VBE(off, = 1.5 V) 2N5038 (Vcs=110 V, VBE)ff, = 1.5 V) 2N5039 (Ves=100 V, V = 1.5 V
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OCR Scan
C 5039 2N5038-1 lc 112 503B 20S2 CB-19

TIC 2260

Abstract: si5464 2N5038 2N5039 HIGH CURRENT NPN SILICON TRANSISTOR n 2N5038 IS A SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5038 and 2N5039 are silicon planar multiepitaxial NPN transistors in Jedec , Unit 2N5038 V CBO Collector-Base Voltage (I E = 0) 2N5039 150 120 V V CEX , W -65 to 200 o C 200 o C 1/5 2N5038/2N5039 THERMAL DATA R thj -ca se , est Con ditio ns for 2N5038 V CE = 140 V V CE = 100 V for 2N5039 V CE = 110 V V CE = 85 V Min
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OCR Scan
TIC 2260 si5464 RF Transistor 2n5038
Showing first 20 results.