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Part Manufacturer Description Datasheet BUY
RG2012N-4991-B-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 4990ohm, 150V, 0.1% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
RG2012N-4991-D-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 4990ohm, 150V, 0.5% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
RG2012N-4991-W-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 4990ohm, 150V, 0.05% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
RG2012N-4991-W-T1 Susumu Co Ltd Res,SMT,Metal Film,4.99K Ohms,100WV,.05% +/-Tol,-10,10ppm TC,0805 Case visit Digikey Buy

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Part : 2N4991 Supplier : Solid State Devices Manufacturer : Newark element14 Stock : 132 Best Price : $1.96 Price Each : $2.75
Part : 2N4991 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 291 Best Price : $5.51 Price Each : $6.59
Part : 2N4991 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 110,313 Best Price : - Price Each : -
Part : 2N4991 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 5,250 Best Price : $2.2317 Price Each : $5.4432
Part : 2N4991 Supplier : Solid State Devices Manufacturer : element14 Asia-Pacific Stock : - Best Price : $2.61 Price Each : $3.6720
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2N4991 Datasheet

Part Manufacturer Description PDF Type
2N4991 Planeta Semiconductor JSC Silicon bilateral switch Original
2N4991 General Electric Semiconductor Data Book 1971 Scan
2N4991 General Electric Semiconductor Data Handbook 1977 Scan
2N4991 General Electric Planar monolithic silicon bilateral transistor. 1A. Scan
2N4991 N/A Short Form Datasheet and Cross Reference Data Scan
2N4991 N/A Short Form Datasheet and Cross Reference Data Scan
2N4991 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N4991 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N49911 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan

2N4991

Catalog Datasheet MFG & Type PDF Document Tags

2N4991

Abstract: 2N4992 ? _Unijunction Transistors and Switches 2N4991, 2N4992 Silicon Bilateral Switch TO-98 The GE/RCA 2N4991 , 3875081 G E SOLID STATE 01E 18008 D Unijunction Transistors and Switches_ / '¿«LS 2N4991, 2N4992 , SYMBOL LIMITS UNITS 2N4991 2N4992 MIN. TYP. MAX. MIN. TYP. MAX Forward Voltage Drop (on , characteristic. 01E 18009 D . Unijunction Transistors and Switches 2N4991, 2N4992 r- 25-09 500 * 400 I w D , . 2N4991, 2N4992 01 de j 3ä7sdfll d01ö01g 1 01E 18010 D - T'ZS'O^ TEST CIRCUITS vs I 1 I-V« + vf
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GE 2N4992 low voltage scr TRIAC 18007 unijunction application note silicon bilateral switch 2n4992 2CS-4235C 2CS-423S

2n2646 equivalent

Abstract: 2N4991 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 - , Silicon Economy Bilateral Switch 2N4991 CSBS) The General Electric SBS is a silicon planar, monolithic , and Triac phase control circuits. The 2N4991 is in the low cost, TO-98 plastic package. absolute , V 1.0 /¿sec V 30.0 i» sec 443 2N4991 | STATIC CHARACTERISTICS S2 1 P-T-
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2n2646 equivalent 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 THYRISTOR A2f equivalent transistor of 2n6027 2N489-494 2N2646-47 2N489-94 2N602

2N4991

Abstract: silicon bilateral switch 2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol IT(rms) Igm IT(sm) P Parameter, units Limits DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) Power dissipation, mW 200 5 1 300 Electrical Characteristics (TA=25°C) Symbol VS IS IH IB VF Parameter, unit
Planeta JSC
Original
silicon bilateral switch

2N4991

Abstract: 2N4991 Silicon bilateral switch (SBS) in package TO-92 0.7max ^ ,j).45m ax 1 '2 ¡Al < 14.5 » J \3 Pinouts: 1 - Anode II, 2- Gate, 3 - Anode Ratings Symbol ^Tirms) Parameter, units DC forward anode current, mA DC gate current, mA Peak recurrent forward current, A, (1% duty cycle, lO^isec pulse width) Power dissipation, mW Limits 200 5 1 300 Iqm l-r(sm ) P Electrical Characteristics (Ta=25°C) Symbol Vs Is Ih Ib Parameter, unit, test conditions Switching voltage, V
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2N4991

Abstract: MBS4992 MOT OR OL A SC -CDIODES/OPTO 34 DËT|b3b7E5S DD3A1S1 1 M 6367255 MOTOROLA SC (DIODES/OPTO) 34C 38151 SILICON THYRISTOR DIE (continued) T " ' ^ ·$' ' °J DIE NO. LINE SOURCE - DTL71 2C4991 Device assembled from this die type are similar to the fol lowing device types: MBS4991 MBS4992 2N4991 2N4992 2N4993 SBS-Silicon Bidirectional Switch METALLIZATION - T o p . Al Back
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GE TRIAC SC40B

Abstract: 2n4992 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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SC40B GE TRIAC SC40B 3N84 transistor 2n4992 2N4992 equivalent SBS thyristor

2n2646 equivalent

Abstract: 2N2646 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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triac phase control EQUIVALENT 2N1671 four-layer diode 2N4987 2N4983 2N4985 INI4993

2N4983

Abstract: transistor 2N4983 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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2N4986 transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 GE C22B scs thyristor S-2N4983 2N4963

2N2646 equivalent

Abstract: SUS-2N4989 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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2N4988 SUS-2N4989 20 amp 800 volt triac 3N81 D5K2 2n4989 047/1F 2N4989 GEC32U J2N2647

2N4985

Abstract: 2N2646 cross reference , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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2N4984 2N2646 cross reference GE SCR cross reference SUS 2N4984 GE SCR 1000 AMP 2N4991 "cross reference" I2N2647

four-layer diode

Abstract: transistor 2N4983 .75 3.5 â'¢= 2N4991 â S 2N4992 175 1.0 300 10 500 1.0 1.7 1.5 3.5 200 1.0 350 Â
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D13V1 D13V2 D13V3 2N4990 GE 2N4988 RA1C RA3A B13V4

2n2646 equivalent

Abstract: IN5059 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500 1.0 3 5 1.0 350 -
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SUS-2N4986 IN5059 SUS 2N4987 2N4987-90 2N4987 equivalent ge motor capacitor cross reference

UJT 2N2646

Abstract: UJT 2N2646 specification , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E
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UJT 2N2646 UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 SCR firing inverter circuit 2IM2646 26B-2N2647-HI

2n2646 ujt

Abstract: applications of ujt with circuits PUT 150 40 0.2-1.6 TO-92 GES6028 PUT 150 40 0.2-0.6 TO-92 2N4991 SBS 175 - 6.0-10.0 TO-98 2N4992 SBS
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MPS2906A GES2646 applications of ujt with circuits applications of ujt 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56

ujt transistor 2n2160

Abstract: 2N2160 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E
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ujt transistor 2n2160 2N2160 General electric SCR 2n2222 germanium 2N4891 UJT 43 Programmable Unijunction Transistor

2n2646 equivalent

Abstract: UJT 2N2646 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F e
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2N2646 replaced by ujt 2N6027 D13T1 ujt transistor equivalent 2n2646 UJT 2N2646 operation 2N5I72 IN4I54 2N6028 2N2926 GE76F02FC100

TDA3541

Abstract: tda3510 ) (mW) min 2N4991 200 5 1 300 6 10 500 1.5 0.1 5 1.5 175 TO , TO-92 7 2N4991 TO-92 10 BD139 TO-126 7 SS9014C TO-92 7 2N4992 TO
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Original
TDA3541 TDA8305A tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 MMBR941 TDA3530 DIP28 7908AC MMBT3904

UJT 2N2646

Abstract: 2n2646 ujt , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E
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UJT 2N2646 POWER RATING UJT 2N491 UJT APPLICATION UJT 2N2646 ratings scr firing circuit UJT triggering circuit General electric SCR manual 2N494

3N81

Abstract: IN4148 anode cathode 1.0 300 200 0.1 .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500
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IN4148 anode cathode eto thyristor thyristor igc TRANSISTOR BO 344 SCR thyristor test IR SCR 16 RC 100A 2N499

UJT 2N2646 specification

Abstract: 2N1671 , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E
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2N1671B SCR Manual, General electric GE SCR Manual thyristor scr oscillator circuit uni junction transistor 2N2646 2N1671A 2NI67IA 2NI67IA-2NI67IB 2N1671-2N1671A

3n84

Abstract: SCR nomenclature, General electric 1.0 300 200 0.1 .75 3 â > 262 â = 2N4991 â B 2N4992 2N4993 200 175 1.0 300 10 500
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SCR nomenclature, General electric scr 6A 9019 transistor 3N83 n4148 NPN Monolithic Transistor Pair IN4I48 IN4I46 500PPS

UJT 2N2646 specification

Abstract: UJT 2N2646 ratings , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E
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UJT 2N2646 RANGE d5k2 application Complementary UJT ujt free 2N2646 Vp ujt timer CIRCUIT
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