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Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,117 Best Price : $0.2030 Price Each : $0.58
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 900 Best Price : €0.2346 Price Each : €0.6981
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2061 Price Each : €0.4085
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,987 Best Price : $0.2030 Price Each : $0.58
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.2550 Price Each : $0.2650
Part : 2N4922 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 7,847 Best Price : $0.19 Price Each : $0.24
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 23,400 Best Price : $0.25 Price Each : $0.31
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Ameya Holding Stock : 1,300 Best Price : $0.59 Price Each : $0.59
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 7,210 Best Price : $0.2180 Price Each : $0.4370
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 312 Best Price : $0.3086 Price Each : $0.5181
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 29 Best Price : $0.24 Price Each : $0.75
Part : 2N4922G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 29 Best Price : £0.2040 Price Each : £0.6070
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2N4922 MOTOROLA

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic NPN Silicon Transistors . . . , Junction Temperature Range Symbol VCEO VCB VEB ic Ib Pd T j' Tstg 2N4921 40 40 2N4922 60 60 5.0 1.0 3.0 1.0 , Motorola Pntonvd Davtct · · 1 AMPERE GENERAL-PURPOSE POWER TRANSISTORS 4 0 -8 0 VOLTS 30 WATTS , limits are applicable and must be observed. Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 3-38 Motorola Bipolar Power Transistor Device Data -
OCR Scan
2N4923 2N4918 2N4919 2N4920
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by2N 492i/D M edium -P ow er P , v CEO VCB Veb ic 2N4921 40 40 2N4922 60 60 5.0 1.0 3.0 1.0 30 0.24 - 6 5 to +150 2N4923 , ust be observed. P referred devices are Motorola recommended choices lor future use and best overall value. REV 7 Motorola, Inc. 1995 ftf) M O T O R O L A 2N4921 thru 2N4923 , cto r-E m itte r Sustaining Voltage (1) (Iq - 0.1 Adc, \ q - 0) v CEO(sus) 2N4921 2N4922 2N4923 ICEO -
OCR Scan
2N4923 MOTOROLA 2N4921/D
Abstract: MOTOROLA Order this document by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 thru , , and amplifier applications. These high­performance plastic devices feature: *Motorola Preferred , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N4921 2N4922 , and must be observed. Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2 Motorola
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2n4923r to.225aa 2N4921-D 12 volt-30 amp power diode
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4921/D M edium -Pow er , Construction - 2N4921 thru 2N 4923* ` Motorola Preferred Device PD = 3 0 W @ T g = 25°C Excellent Safe , VCEO VCB Veb ic 2N4921 40 40 2N4922 60 60 5.0 1.0 3.0 1.0 30 0.24 -6 5 t o +150 2N4923 80 80 Unit Vdc , = 0.1 Adc, Ib = 0) VcEO(sus) 2N4921 2N4922 2N4923 'CEO 2N4921 2N4922 2N4923 ICEX 40 60 80 - Vdc , Motorola Bipolar Power Transistor Device Data 2N 4921 thru 2N 4923 cc o eg o sü I- < J 1 LU -
OCR Scan
transistor 2n
Abstract: MOTOROLA SC (XSTRS/R F) 4bE D â  fc.3b?254 OQTBHm 0 «MOTb TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) T-$2> STYLE 1: vS^fe STYLE 3: PIN 1. EMITTER YSy PIN 1. BASE 2. COLLECTOR J^&OT 2. COLLECTOR 3. BASE ^¿r 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching IcCont Amps Max , 0.1 10 20 20 1 40 2N4921 2N4918 20/100 0.5 0.6 typ 0.3 typ 0.5 3 30 60 2N4922 2N4919 20/100 0.5 0.6 , are preferred MOTOROLA 48 BIPOLAR POWER TRANSISTOR SELECTOR GUIDE & CROSS REFERENCE -
OCR Scan
BD157 BD158 BD232 MJE340 2N5656 BD136 B0139 bd140 cross reference b0135 TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 MJE3439 MJE341 MJE344 2N5655
Abstract: 0.5 3 30 60 2N4922 2N4919 20/100 0.5 0.6 typ 0.3 typ 0.5 3 30 80 2N4923 2N4920 20/100 0.5 0.6 typ , ) (continued) # I h(e I @ 1 MHz MOTOROLA EUROPEAN MASTER SELECTION GUIDE 3-23 -
OCR Scan
MJE340S B0166 BD169 BD139 BD170 hie bd135 2N4918 MOTOROLA MJe340 350 B0180 mje520 MJE350 BD159 BD165 BD135
Abstract: following device types: NPN 2N4921 2N4922 2N4923 MJE520 MJE720 MJE721 MJE722 2N4918 2N4919 2N4920 MJE370 , your Motorola sales representative. 3-7 4 -
OCR Scan
37931 MJE520 MOTOROLA mje712 PL500 2C4923 2C4920 MJE710 MJE711 MJE712
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium-Power Plastic NPN Silicon Transistors . . . , 2N4923* *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ , 40 2N4922 60 60 2N4923 80 80 Unit Vdc Vdc Vdc Adc Adc Collector­Emitter Voltage Collector­Base , . Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 3­38 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Motorola
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2SC105 bd139 equivalent transistor 2sd718 amplifier BU100 BU108 BU326 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by2N 49ia/D M edium -P ow er P , Operating Area Gain Specified to Iq = 1.0 Amp Complement to N PN 2N4921, 2N4922, 2N4923 3 AMPERE , are Motorola recommended choices lor future use and best overall value. REV 7 © Motorola, Inc , Circuit Figure 3. Turn-On Time 2 Motorola Bipolar Power Transistor Device Data 2N4918 thru , Iq , COLLECTOR CURRENT (mA) Figure 6. Storage Time Figure 7. Fall Time Motorola Bipolar -
OCR Scan
transistor m 1104 2N4918/D
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4918/D M edium -Pow er P , Construction - 2 N 49 18 thru 2N 4920* ` Motorola Preferred Device PD = 3 0 W @ T g = 25°C Excellent Safe Operating Area Gain Specified to Iq = 1.0 Amp Complem ent to NPN 2N 4921, 2N4922, 2N4923 3 , . Switching Time Equivalent Test Circuit Figure 3. Turn-On Time 2 Motorola Bipolar Power Transistor , ) Figure 6. Storage Time Figure 7. Fall Time Motorola Bipolar Power Transistor Device Data 3 -
OCR Scan
N4918
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium -Pow er Plastic PNP Silicon Ttansistors . . . , Gain Specified to lc = 1-0 Amp Complement to NPN 2N4921, 2N4922, 2N4923 2N 4918 thru 2N 4920* ` Motorola Praftm d Dtvtot 3 AMPERE QENERA L-PUR PO SE POW ER TRANSISTORS 4 0 - 8 0 VOLTS 30 WATTS ` , REV 7 3-34 Motorola Bipolar Power Transistor Device Data 2 N 4 9 1 8 thru 2 N 4 9 2 0 , Motorola Bipolar Power Transistor Device Data 3-35 2 N 4 9 1 8 thru 2 N 4 9 2 0 0.02 0.03 0.05 -
OCR Scan
ba 4918 2N4B18
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium-Power Plastic PNP Silicon Transistors . . . , Specified to IC = 1.0 Amp · Complement to NPN 2N4921, 2N4922, 2N4923 *MAXIMUM RATINGS Ratings 2N4918 thru 2N4920* *Motorola Preferred Device ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ , TEMPERATURE (°C) 125 150 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 3­34 Motorola Bipolar Power Transistor Device Motorola
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2n4920R 2N6124 334 bdw93c BU806 Complement BDX54 2SA981 equivalent MJ15016 BU208A MJE16106 MJ16012 MJ10009 TIP101
Abstract: MOTOROLA Order this document by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 thru , , and amplifier applications. These high­performance plastic devices feature: *Motorola Preferred , Specified to IC = 1.0 Amp · Complement to NPN 2N4921, 2N4922, 2N4923 3 AMPERE GENERAL­PURPOSE POWER , Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2 Motorola
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Abstract: Genrl Diode SemiconTech Genrl Diode Genrl Diode SemiconTech See Index See Index See Index Motorola Motorola Motorola NECElecslnc NECElecslnc NECElecslnc See Index Matsushita Matsushita ToshibaCorp , Power otorola PhilipsElec Telefunken ToshibaCorp See Index PhilipsElec Telefunken ToshibaCorp Motorola Motorola Genrl Diode SemiconTech Genrl Diode SemiconTech See Index SG5-Ates Telefunken See Index Telefunken SGS-Ates Motorola SemiconTech Semicoa Motorola Semicoa SemlconTech Matsushita Hitachi ltd NEC Corp JA Sanyo Space Power Electronics
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2N4947 API 160 2N4418 2N4881 2N4889 2N4906 MOTOROLA BF470S BF472 BF472S HA7725 HA7734 HA7737
Abstract: Index V / O Electro Diode Trans See Index See Index Elec Trans CnmsonSemi CentralSemi Motorola NthAmerSemi See Index CrimsonSemi See Index See Index See Index See Index See Index Motorola Texas Instr See Index Elec Trans SGS-Ates CrimsonSemi See Index Motorola Texas Instr See Index Sld St Dvcs Advncd Semi , 2N4922 2SB954 DTL1642 DTL1652 SD1527-8 2N3767 2N4900 2N4912 PNP 60 30 30 15 15 15 15 15 30 30 Interconnect Devices
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BD171 BD173 2N5483 MJE30 diode 2U 66 KT821V1 DTL3512 BD172 2SA843 MJE341K
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TM Data Sheet SWITCHMODETM NPN Designer's Bipolar , Turn­Off (No Current Tail) · Full Characterization at 125_C · Motorola "6 SIGMA" Philosophy Provides Tight , boundaries on device characteristics - are given to facilitate "worst case" design. Motorola Bipolar , TC = 25°C @ 3 us @ TC = 125°C 15 MJE18204 MJF18204 3­760 Motorola Bipolar Power Transistor , MJF18204 Motorola Bipolar Power Transistor Device Data 3­761 MJE18204 MJF18204 TYPICAL STATIC Motorola
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TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3055 transistor equivalent 2N3792 MOTOROLA mjf18204 equivalent mje13005 ballast MJE/MJF18204 TIP102 TIP106 TIP107 TIP31C TIP32C
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Transistors These , Leakage Currents · · · · · Designer's TM Data Sheet MJE16002* MJE16004* *Motorola Preferred , characteristics - are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 3­688 Motorola Bipolar Power Transistor Device , : PW = 300 us, Duty Cycle I *f = C IB1 2%. Motorola Bipolar Power Transistor Device Data 3­689 Motorola
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D45H11 equivalent replacement transistor equivalent book 2SC2073 BDX36 equivalent P6042 mje521 equivalent transistor mj15003 equivalent MJH16002 TIP120 TIP121 TIP122 TIP125 TIP126
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 TM Data Sheet Switchmode Series Ultra-Fast NPN , representing boundaries on device characteristics - are given to facilitate "worst case" design. Motorola , %. 3­152 Motorola Bipolar Power Transistor Device Data 2N6836 TYPICAL STATIC CHARACTERISTICS VCE , . Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3­153 , . Crossover Time Figure 12. Crossover Time 3­154 Motorola Bipolar Power Transistor Device Data Motorola
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MJ802 EQUIVALENT bd139 equivalent MJE3055T equivalent TIP41C EQUIVALENT mje521 equivalent mje340 equivalent 204AA TIP127 TIP73B TIP74 TIP74A TIP74B
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon High-Power Transistors , Thermal Resistance, Junction to Ambient * Indicates JEDEC Registered Data. * Motorola guarantees this , by Figure 13. All limits are applicable and must be observed. REV 7 Motorola Bipolar Power , * Indicates JEDEC Registered Data. * Motorola Guarantees this Data in Addition to JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% (continued) v v 3­30 Motorola Bipolar Power Motorola
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audio output TRANSISTOR PNP MJ15022 equivalent 2SA1046 OF TRANSISTOR tip122 MJ2955 2n3055 200 watts amplifier mj15004 equivalent 2N4398 2N5745 2N5301 2N5302 2N5303 2N4399
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Power Darlingtons · · · · · · · , ) Proper strike and creepage distance must be provided. 3­788 Motorola Bipolar Power Transistor , Motorola Bipolar Power Transistor Device Data 3­789 MJF122 MJF127 TA TC 4 80 PD, POWER DISSIPATION , breakdown. 100 Figure 5. Maximum Forward Bias Safe Operating Area 3­790 Motorola Bipolar Power , , BASE CURRENT (mA) Figure 9. Typical Collector Saturation Region Motorola Bipolar Power Transistor Motorola
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tip122 tip127 audio amp schematic tip122 tip127 audio amp 2sa940 2sc2073 pin configuration PNP transistor tip42c 2Sd331 npn transistor E69369 TIP75 TIP75A TIP75B TIP75C 2N6488
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