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Part : 2N4900 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 46 Best Price : $3.1362 Price Each : $6.72
Part : 2N4900 Supplier : RCA Manufacturer : Bristol Electronics Stock : 4 Best Price : $6.72 Price Each : $6.72
Part : 2N4900 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 133 Best Price : - Price Each : -
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2N4900 Datasheet

Part Manufacturer Description PDF Type
2N4900 Central Semiconductor Leaded Power Transistor General Purpose - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=20-100 / fT(Hz)=3M / Pwr(W)=25 Original
2N4900 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N4900 API Electronics Short form transistor data Scan
2N4900 API Electronics Transistor Selection Guide Scan
2N4900 API Electronics Short form transistor data Scan
2N4900 Crimson Semiconductor EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors Scan
2N4900 Diode Transistor Transistor Short Form Data Scan
2N4900 Diode Transistor Transistors Scan
2N4900 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N4900 General Diode Transistor Selection Guide Scan
2N4900 General Electric Silicon P-N-P medium power transistor. 80V, 25W. - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=20-100 / fT(Hz)=3M / Pwr(W)=25 Scan
2N4900 General Transistor Power Transistor Selection Guide Scan
2N4900 Mospec POWER TRANSISTORS(1A, 25W) - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=20-100 / fT(Hz)=3M / Pwr(W)=25 Scan
2N4900 Mospec Medium-Power PNP Silicon Transistor Scan
2N4900 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N4900 Motorola Motorola Semiconductor Datasheet Library Scan
2N4900 Motorola The European Selection Data Book 1976 Scan
2N4900 Motorola European Master Selection Guide 1986 Scan
2N4900 Motorola Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=20-100 / fT(Hz)=3M / Pwr(W)=25 Scan
2N4900 N/A Transistor Shortform Datasheet & Cross References Scan
Showing first 20 results.

2N4900

Catalog Datasheet MFG & Type PDF Document Tags

2N4900 MOTOROLA

Abstract: 2N4898 motorola SEMICONDUCTOR TECHNICAL DATA 96D 8Ã338 _ D T-33-il 2N4898 thru 2N4900 MEDIUM-POWER PNP SILICON , Operating Area â'¢ Gain Specified to lc " 1.0 Ampere â'¢ 2N4900 Complementary to NPN 2N4912 4 AMPERE , Symbol VÇEO VCB Veb Pd Tj.Tjtg 2N4898 2N4899 2N4900 60 -1.0-4.0- â'" 2B â'" -0.143- Unit Vdc , â¡â¡fl033c] t> 6367254 MOTOROLA.SC. , CHARACTERISTICS Collector-Emitter Sustaining Voltage* (I_ = 0.1 Adc, Iâ'ž = 0) 2N4898 2N4899 2N4900
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OCR Scan
2N490 2N4900 MOTOROLA 2N4898 motorola te 2443 MOTOROLA transistor 2N48 2N4912 MOTOROLA 2N49 T-33- T-33-/1

2N4898

Abstract: 2N4900 SavantIC Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power , area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and , 2N4898 VCBO Collector-base voltage 2N4899 VALUE -40 Open emitter -60 2N4900 Collector-emitter voltage -40 2N4899 Open base 2N4900 VEBO V -80 2N4898 VCEO UNIT , UNIT /W SavantIC Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP
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Original

2N4900

Abstract: 2N4898 Inchange Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power , area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and , 2N4899 Open emitter -60 V -80 2N4898 Collector-emitter voltage UNIT -40 2N4900 -40 2N4899 Open base 2N4900 VEBO VALUE Emitter-base voltage -60 V -80 Open , Semiconductor Product Specification 2N4898 2N4899 2N4900 Silicon PNP Power Transistors CHARACTERISTICS
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Original

2N4899

Abstract: 2n4900 Product Specification www.jmnic.com 2N4898 2N4899 2N4900 Silicon PNP Power Transistors , 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier , VCBO Collector-base voltage 2N4899 VALUE 40 Open emitter 60 2N4900 Collector-emitter voltage 40 2N4899 Open base 2N4900 VEBO V 80 2N4898 VCEO UNIT , junction to case JMnic Product Specification www.jmnic.com 2N4898 2N4899 2N4900 Silicon PNP
JMnic
Original

8130A

Abstract: 2N4900 ; point "8" for type 2N4899; and point "C" for type 2N4900. Fig. 4 â'" Oscilloscope display for , , 2N4899, 2N4900 3875081 G E SOLID STATE File Number 1150 Silicon P-N-P TERMINAL DESIGNATIONS Â , 2N4900 are multiple-epitaxial p-n-p transistors. All are supplied In the JEDEC TO-213AA package. All , , Absolute-Maximum Values: 2N4898 2N4899 2N4900 40 60 BO V Vctx(sus) I Vbe = -1.5 V, R8E = 100n , Transistors_' â'¢ â 2N4898, 2N4899, 2N4900 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tq) = 25Â
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OCR Scan
RCA-2N4898 8130A 2N4891 TO-213AA Package clare mercury relay s2c-s 2N4898 equivalent S2CS-2751S 2CM-31120

2N4900

Abstract: 2N4900 Medium-power PNP Silicon Power Transistor. 4 A - 80 V - 25 W. http://store.americanmicrosemiconductor.com/2n4900.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N4900 2N4900 M edium - po w er PNP Silic o n Po w er Trans is t o r. 4 A - 8 0 V - 2 5 W. Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were , 2N4900 $ 27.50 $ 22.00 $ 5.50 Total Price $ 22.00 Company Testimonials Store Policies Contact Us
American Microsemiconductor
Original

2N4898

Abstract: 2N4899 2N4898, 2N4899, 2N4900 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (lc= 100mA, lB = 0) 2N4898 2N4899 2N4900 VCEO(sus) 40 60 80 V Collector Cutoff Current (VCE = 20 V, lB = 0 ) 2N4898 (VCE = 30 V, lB = 0 ) 2N4899 (VCE = 40V,IB = 0) 2N4900 'ceo 0.5 0.5 0.5 mA Collector Cutoff , (1) Pulse Test: Pulse width =300 us , Duty Cycle ^ 2.0% (2) fT = |hfJ-fteâ'ž 2N4898, 2N4899, 2N4900
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OCR Scan
ib10s

te 2443 MOTOROLA transistor

Abstract: 2N4912 if ES SEMICONDUCTOR TECHNICAL DATA MOTOROLA 2N4898 thru 2N4900 4 AMPERE M EDIUM -PO , 2N4899 2N4900 U n it Vdc 40 80 Vdc Vdc =2 5 ° C Pd - 25 - -0 .1 4 3 - W atts , 2N4898 thru 2N4900 E L E C T R IC A L C H A R A C T E R IS T IC S Characteristic OFF CHARACTERISTICS , r-E m itter Sustaining Voilage* (Ir = 0.1 Ade, I - = O) 2N4898 2N4899 2N4900 C ollector Cutoff C urrent (VCE « 20 Vdc, IB « 0) (VCE = 30 Vdc* IB = 0) < VCE = 40 VdC) = 0) 2N4898 2N4899 2N4900 - 1 . 5
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TO-213AA Package

Abstract: ZI-49 . Power Transistors File Num ber 1150 S E CT OR S7E D 2N4898, 2N4899, 2N4900 4302271 , sate-area-of-operation curves TERMINAL DESIGNATIONS JEDEC TO-213AA The 2N4898, 2N4899 and 2N4900 are m , 40 40 5 1 4 1 25 2N4899 60 60 60 5 1 4 1 · 2N4900 80 80 80 5 1 4 1 25 V V V V A A A W °C ·c · Pt , 2N4898, 2N4899, 2N4900 ELEC TR IC AL CHARACTERISTICS, A t Case Temperature (T q ) = 25° C unless , ITS 2N4898 2N4899 2N4900 U N 1 S Q 0 n f l 44 c b Min. Max Min. Max. Min. Max. 100 100
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ZI-49 D0L18H3 ZI49Z 2CU-3II20

2N4900

Abstract: Submit ¡ ¡ 2N4900 Availability Buy 2N4900 at our online store ! 2N4900 Information Cate , 2N4900 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V(BR )C BO (V) : 80 I(C ) Max . (A
American Microsemiconductor
Original

2N4900

Abstract: Search Results Part number search for devices beginning "2N4900" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N4900 2N4900X Polarity PNP PNP Package TO66 TO66 VCEO 80V 80V IC(cont) 4A 4A HFE(min) 20 20 HFE(max) 100 130 @ VCE/IC 1/0.5 1/0.5 FT 3MHz 3MHz PD 25W 25W Searched through 3083 records and found 2 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. Semelab
Semelab
Original

2N4888

Abstract: 2N4900 MOTOROLA TECHNICAL DATA 2N4898 thru 2N4900 4 AM PERE MEDIUM-POWER PNP SILICO N TRA N SISTO RS . . . designed , Specified to lc 1-0 Ampere · 2N4900 Complementary to NPN 2N4912 A,r,P G E N E R A L PURPOSE POWER TRAN , F) 96D 80339 2N4898 thru 2N4900 E L E C T R IC A L C H A R A C T E R IS T IC S , 2N4888 2N4900 C ollector Cutoii C urrent (VCE - 20 Vdc, IB « 0) (VCE = 3 0 V d c , I B = 0) {VCE = 4 0 V , Cutoff C urrent {VB E - 5 . 0 Vdc, Ic = 0) 2N4898 2N4899 2N4900 *CEX VcEO(Bua)* (Tc = 25 *C u n î« » c
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2N488 2f5 transistor Motorola 2N4898 N4088

2N3741 MOTOROLA

Abstract: MJ2254 MOTOROLA SC OIODES/OPTOJ 34 DE | b 3 t i 7 S S S 0037^30 T | §387255 MOTOROLA SC (DIODES/OPTO) 3^C 37930 D SILICON POW ER TRANSISTOR DICE (continued) p 3 3 -0 / DIE NO. - PNP LINE SOURCE - PL500.37 This die provides performance equal to or better than that of the following device types: 2N3740, A 2N3741, A 2N4898 2N4699 2N4900 MJ2253 MJ2254 MJ3701 MJ3702 MJ3703 MJ3704 2C4900 Designed for driver circuits, switching, and amplifier applications
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OCR Scan
2N3741 MOTOROLA 2N3740 motorola motorola transistor PNP
Abstract: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES May 1998 TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269 2N4269S 2N4272 2N4272A 2N4273 2N4300 2N4311 2N4358 2N4388 2N4395 2N4396 2N4399 2N4427 2N4863 2N4864 2N4895 2N4896 2N4897 2N4898 2N4898 CECC 2N4899 2N4899 CECC 2N4900 2N4900 CECC 2N4901 2N4901-220SM 2N4902 2N4903 2N4904 2N4905 2N4906 -
OCR Scan
2N4907 2N4908 2N4909 2N4910 2N4910-SM 2N4911
Abstract: NEW ENGLAND SEMICONDUCTOR PNP TRANSISTOR TO-66 PACKAGE PNP TO-66 DEVICE TYPE 2N3740A 2N3740A 2N3741A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6211A 2N6212A 2N6213A 2N6312 2N6313 2N6314 2N6317 2N6318 * Tr = 25 C hV V CER BIPOLAR (sus) VOLTS 60 60 80 80 40 60 80 80 80 40 250h 325h 375h 40 60 80 60 80 V cE O Ic (max) AMPS 1 1 1 1 1 1 1 1*FE@ I C/ V c E (min/max @ A/V) @ ^C'/Iß (V@ A/A) .6@1/.125 .6@1/.125 .6@1/.125 .6@1/.125 ,6@ l/.l ,6@ l/.l ,6@ l/.l l@2/.2 l -
OCR Scan

transistor A7a

Abstract: 2N6211A NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE ^CEO (sus) VOLTS Ic (max) AMPS hFE@ Ic/ VCE (min/max @ A/V) VcE(s»t) @IC/IB (V @ A7A) p * WATTS fx (MHz) PNP 2N3740A 60 1 30-100@.25/l .6@1/.125 25 4 TO-66 2N3740A 60 1 30-100@.25/l .6@1/.125 25 4 2N3741A 80 1 30-100@.25/l .6@1/.125 25 4 2N3741A 80 1 30-100@.25/l .6@1/.125 25 4 ir^ 2N4898 40 1 20-100@.5/l .6@l/.l 25 3 2N4899 60 1 20-100@.5/l ,6@l/.l 25 3 2N4900 80 1 20-100@.5/l ,6@l/.l 25 3 2N5954 80 6 20-100@2/4 1 @2/.2
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OCR Scan
transistor A7a

FT428

Abstract: MPS-U05F 2N3741 80 30/100 0.25 0.6 1.0 4.0 25 TO-66 8 2N4900 80 20/100 0.50 0.6 1.0 3.0 25 TO-66 9 2N4912 80
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OCR Scan
D40D7F D40D10F D40D13F TIP29B TIP30B SE9331 FT428 MPS-U05F D41D7F D41D10F D41D13F

2N3775

Abstract: 2N3777 Device Type VCEO hFE (V) Min/Max @ IC (A) 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N4234 2N4235 2N4236 2N4898 2N4899 2N4900 2N5415 2N5416 2N3660 2N3661 40 60 80 100 40 60 80 100 40 60 80 40 60 80 200 300 30 50 20/60 20/60 20/60 20/60 10/40 10/40 10/40 10/40 30/150 30/150 30/150 20/100 20/100 20/100 30/150 30/120 25/100 25/100 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.25 0.25 0.50 0.50 0.50
Solitron Devices
Original
to-5 DSASW0036860 DATASHEET 2N3777

2N6121

Abstract: 2N6122 TRANSISTORS-POWER PNP TO-66 PACKAGE V CEO !C h FE h FE V CE(sat) PD fT VOLTS AMPS TYPE 2N4898 2N4899 2N3740 2N4900 2N3741 MIN 40 50 60 80 80 MAX 1 1 1 1 1 @ 'c AMP .50 .50 .25 .50 .25 VOLTS MAX 0.6 0.6 0.6 0.6 0.5 @ lc T c =25°C MHz MIN 3 3 4 3 4 NPN COMPLEMENT 2N4910 2N4911 2N4912 MIN-MAX 20 - 100 2 0 - 100 3 0 - 100 20 - 100 30 - 100 @ @ @ @ @ AMP @ @ @ @ @ 1.0 1.0 1.0 1.0 1.0 w 25 25 25 25 25 NPN TO-220 (PLASTIC TO-66) PACKAGE *c VOLTS AMPS V CEO h
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OCR Scan
2N6121 2N6122 2N6124 2N6123 2N6125 2N6126

2N4912

Abstract: 2N4910 SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS
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2N4898

Abstract: cecc00200 C C 00200 2N4898 2N4899 2N4900 T h ir d a n g le p r o je c t io n For ordering inform , storage temperature range M a x i m u m collector-base contin uo us (direct) voltage 2N4898 2N4H99 2N4900 , 2N4899 2N4900 - vLB0 Ma x i m u m emitter-base c o nt in uo us (direct) reverse voltage Ma x i m u m
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OCR Scan
cecc00200 marking W1A t009 transistors 6822 2NA900 PD9002

2N4912

Abstract: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES May 1998 TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269 2N4269S 2N4272 2N4272A 2N4273 2N4300 2N4311 2N4358 2N4388 2N4395 2N4396 2N4399 2N4427 2N4863 2N4864 2N4895 2N4896 2N4897 2N4898 2N4898 CECC 2N4899 2N4899 CECC 2N4900 2N4900 CECC 2N4901 2N4901-220SM 2N4902 2N4903 2N4904 2N4905 2N4906
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OCR Scan
N4900

2N438b

Abstract: 2N1702 MOTOROLA SC OIODES/OPTOJ 34 DE | b 3 t i 7 S S S 0037^30 T | §387255 MOTOROLA SC (DIODES/OPTO) 3^C 37930 D SILICON POW ER TRANSISTOR DICE (continued) p 3 3 -0 / DIE NO. - PNP LINE SOURCE - PL500.37 This die provides performance equal to or better than that of the following device types: 2N3740, A 2N3741, A 2N4898 2N4699 2N4900 MJ2253 MJ2254 MJ3701 MJ3702 MJ3703 MJ3704 2C4900 Designed for driver circuits, switching, and amplifier applications
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OCR Scan
2N3782 2N4387 SDT3501 SDT3502 2N1702 2N438b SDT3503 SDT3504

4912

Abstract: 40VVCR 2N3741 80 30/100 0.25 0.6 1.0 4.0 25 TO-66 8 2N4900 80 20/100 0.50 0.6 1.0 3.0 25 TO-66 9 2N4912 80
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OCR Scan
4912 40VVCR 4911 2N491Q 100KHZ
Showing first 20 results.