2N4400/2N4401 MIL-STD-202G 2N4401 2N4400 - Datasheet Archive

 

Purpose Transistors (NPN) 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features · NPN Silicon Epitaxial

 

Small Signal General Purpose Transistors (NPN) 2N4400/2N4401 2N4400/2N4401 Small Signal General Purpose Transistors (NPN) Features · NPN Silicon Epitaxial Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: TO-92 TO-92, Plastic Package Solderable per MIL-STD-202G MIL-STD-202G, Method 208 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N4401 2N4401 2N4400 2N4400 Marking Code 2N4400 2N4400 Unit 2N4401 2N4401 VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V Collector Current Continuous 600 mA Power Dissipation at TA=25°C 625 mW Derate above 25°C 5.0 Conditions mW/° C IC PD Power Dissipation at TC=25°C 1.5 W Derate above 25°C 12 mW/° C RJA Thermal Resistance Junction to Ambient Air 200 ° C/W RJC Thermal Resistance Junction to Case 83.3 ° C/W -55 to +150 °C PD TJ ,TSTG Operation and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-03-05 Page 1 of 4 Small Signal General Purpose Transistors (NPN) 2N4400/2N4401 2N4400/2N4401 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) 2N4400 2N4400 Symbol 2N4401 2N4401 Description Unit Min. Max. Min. Conditions Max. V(BR)CBO Collector-Base Breakdown Voltage 60 - 60 - V IC=100µA, IE=0 V(BR)CEO* Collector-Emitter Breakdown Voltage 40 - 40 - V IC=1mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - 6.0 - V IE=100µA, IC=0 VCE(sat) * Collector Emitter Saturation Voltage - 0.40 - 0.40 - 0.75 - 0.75 VBE(sat) * Base Emitter Saturation Voltage 0.75 0.95 0.75 0.95 - 1.20 - 1.20 IC=150mA, IB=15mA V IC=500mA, IB=50mA IC=150mA, IB=15mA V IC=500mA, IB=50mA ICEV Collector Cut­Off Current - 100 - 100 nA VEB=0.4V, VCE=35V IBEV Base Cut­Off Current - 100 - 100 nA VEB=0.4V, VCE=35V - - 20 - VCE=1V, IC=0.1mA 20 - 40 - VCE=1V, IC=1mA 40 - 80 - VCE=1V, IC=10mA 50 150 100 300 VCE=1V, IC=150mA 20 - 40 - VCE=2V, IC=500mA hFE* D.C. Current Gain hie Input Impedance 0.5 7.5 1.0 15 k hre Voltage Feedback Ratio 0.1 8.0 0.1 8.0 x10 Current Gain-Bandwidth Product 200 - 250 - MHz fT 4 CCBO Collector-Base Capacitance - 6.5 - 6.5 pF CEBO Emitter-Base Capacitance - 30 - 30 pF hfe Small Signal Current Gain 20 250 40 500 hoe Output Admittance 1.0 30 1.0 30 S Delay Time - 15 - 15 nS tr Rise Time - 20 - 20 nS ts Storage Time - 225 - 225 nS tf Fall Time - 30 - 30 nS td *Pulse VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0 f=100KHz, VEB=0.5V, IC=0 f=100KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCC=30V, VEB=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA Test: Pulse Width