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Part : 2N4347 Supplier : Harris Semiconductor Manufacturer : Bristol Electronics Stock : 48 Best Price : - Price Each : -
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2N4347 Datasheet

Part Manufacturer Description PDF Type
2N4347 Comset Semiconductors High Power Industrial Transistors Original
2N4347 Comset Semiconductors HIGH POWER INDUSTRIAL TRANSISTORS Original
2N4347 Comset Semiconductors HIGH POWER INDUSTRIAL TRANSISTORS Original
2N4347 Comset Semiconductors HIGH POWER INDUSTRIAL TRANSISTORS Original
2N4347 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N4347 API Electronics COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan
2N4347 API Electronics Short form transistor data Scan
2N4347 API Electronics Short form transistor data Scan
2N4347 Boca Semiconductor HIGH-POWER INDUSTRIAL TRANSISTORS Scan
2N4347 Continental Device India TO-3 Power Package Transistors Scan
2N4347 Continental Device India Semiconductor Device Data Book 1996 Scan
2N4347 Continental Device India TO-3 Power Package Transistors (NPN) Scan
2N4347 Continental Device India TO-3 Power Package Transistors (NPN) Scan
2N4347 Crimson Semiconductor HOMETAXIAL / MULTIEPITAXIAL Transistors Scan
2N4347 Diode Transistor TO-3 / Various Transistor Selection Guide Scan
2N4347 Diode Transistor 35 to 500V Transistor Selection Guide Scan
2N4347 General Diode Transistor Selection Guide Scan
2N4347 General Electric High voltage silicon N-P-N transistor. 140V, 100W. Scan
2N4347 Lucas Semiconductors Semiconductor Products Scan
2N4347 Mospec High-Power Industrial Transistor Scan
Showing first 20 results.

2N4347

Catalog Datasheet MFG & Type PDF Document Tags

2N3442

Abstract: 2N4347 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for , (Max) @ IC = 2.0 Adc ­ 2N4347 · Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) ­ 2N4347 , Value 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 120 140 140 160 7.0 , . COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings
Comset Semiconductors
Original
transistor 2n3442 ic20 2n3442 datasheet

2n6262

Abstract: 2n3442 ra tin g areas fo r type 2N4347. Fig. 4 - C u rre n t d e ra tin g curve fo r a ll types. Fig , p ic a l d c beta cha ra c te ris tic s fo r ty p e 2N4347. Fig. 7 - T ypical d c beta cha ra c , tic s for type 2N3442. Fig. 9 - T ypical In p u t cha ra c te ris tic s for type 2N4347. 02 , - T y p ic a l tra n s fe r cha ra c te ris tic s (or type 2N 3442 a n d 2N4347. Q2 Q4 06 , General-Purpose Power Transistors File N um ber 528 2N3442, 2N4347, 2N6262 High-Voltage
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OCR Scan
D0173

2N3442

Abstract: 2n4347 type 2N4347. Fig. 3 - Current derating curve for ail types. 2-11 POW ER TRANSISTORS 2N3442 , - Typical dc beta characteristics for type 2N4347. COLLECTOR-TO-OMTTCM V M J A S e < ¥ c ^ *4 V , characteristics for type 2N3442. Fig. 7 - Typical input characteristics for type 2N4347. 2-12 , File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T > 2N3442, 2N4347 4 3 0 2 2 , dissipation capability - 100 W (2N4347) - 117 W (2N3442) Maximum area-of-operation curves for dc and pulse
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OCR Scan
E271 T0-204AA

2N3442 RCA

Abstract: 2N6262 . 3 â'" Maximum operating areas tor type 2N4347. Fig. 4 â'" Current derating curve tor all types , type 2N4347. s COLUCTOfl-TO-CUTTCft VOLTA« (Vc(>« 4 V i "" i S to ì " IO S , characteristics for type 2N3442. Fig. 9 â'" Typical Input characteristics for type 2N4347. 0.2 Q4 Q6 OS , 2N3442 and 2N4347. Q2 Q4 06 AS BASE-TO-EWJTTER VOLTAGE (VaEJ â'" V «CS-ISS« COLLECTOR-TO-EUIT TER , Power Transistors File Number 528 2N3442, 2N4347, 2N6262 High-Voltage Silicon N-P-N Transistors
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OCR Scan
RCA-2N3442 2N3442 RCA RCA 2n6262 2SC SERIES TRANSISTORS DG173BL dg173b DG173 2N6262J 92CS-

2N3442

Abstract: 2N4347 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for , (Max) @ IC = 2.0 Adc ­ 2N4347 · Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) ­ 2N4347 , Value 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 120 140 140 160 7.0 , . COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings
Comset Semiconductors
Original
VCE-40

2N3442

Abstract: 2N4347 power switches. FEATURES: * Collector-Emitter Sustaining Voltage -^ceo(sus) = 120 V (Min.) - 2N4347 = , A, lB = 0.2 A - 2N4347 MAXIMUM RATINGS Boca Semiconductor Corp. BSC FIGURE -1 POWER DERATING 140 50 75 100 125 150 175 200 TC,TEMPERATURE( °C) NPN 2N3442 2N4347 Characteristic Symbol 2N4347 , CHARACTERISTICS Characteristic Symbol 2N4347 2N3442 Unit Thermal Resistance Junction to Case Rejc 1.75 1.5 , 4.36 K 10.67 11.18 http://www.bocasemi.com 2N3442, 2N4347 NPN ELECTRICAL CHARACTERISTICS (Tc = 25Â
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OCR Scan
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 2N344 AREA-2N3442 AREA-2N4347

2N3442

Abstract: 2N4347 2N4347. Fig. 3 - Currant derating curve for all types. 2-11 POWER TRANSISTORS 2N3442, 2N4347 , for type 2N4347. 0.2 0.4 0.C 0.B 1.0 1.2 1.4 1.6 02 0.4 0.6 0.8 , input characteristics for type 2N4347. BASE-TO-EMITTEH VOLTAGE ~V 92SS-3228 Fig. 8 - Typical transfer characteristics for type 2N3442 and 2N4347. Fig. 9 - Typical saturation-voltage , File Num ber 528.1 2N3442, 2N4347 High-Voltage Silicon N-P-N Transistors H ig h-P o w er
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OCR Scan

2N3422

Abstract: 2N3442 TECHNICAL DATA SEMICONDUCTOR MOTOROLA 2N3442 2N4347 5.0 AND 10 AMPERE HIGH-POWER INDUSTRIAL , Collector-Emitter Saturation Voltage - V cE(sat) = 1.0 Vdc (Max) @ lG * 2.0 Adc - 2N4347 POWER TRANSISTORS NPN , (sus) = 120 Vdc (M'ni " 2N4347 140 Vdc (Min) - 2N3442 · Excellent Second-Breakdown Capability STYLE , Junction Temperature Range Symbol V fiE O 2N4347 120 140 7.0 5.0 10 3.0 8.0 100 0.57 10 15" 7.0 - -»l , , Junction to Case Symbol 2N4347 1.75 2N3442 1.5 U nit °C/W Rfljc ·indicates JE D E C Registered Data
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OCR Scan
2N3422 2N4327 C0440 T01ERANCING YI45M C0NTR01UNG

2N3442

Abstract: 2N4347 2N4347 = 140 V (Min.) - 2N3442 * Low Collector-Emitter Saturation Voltage - vCE(sat) = 10 V (Max.) @ lc = 2.0 A, lB = 0.2 A - 2N4347 MAXIMUM RATINGS FIGURE -1 POWER DERATING 140 50 75 100 125 150 175 200 TC,TEMPERATURE( °C) NPN 2N3442 2N4347 Characteristic Symbol 2N4347 2N3442 Unit , 2N4347 2N3442 Unit Thermal Resistance Junction to Case Rejc 1.75 1.5 °C/W 5.0 and 10 AMPERE NPN , Collector - Emitter Sustaining Voltage (1) (lc = 200 mA, lB = 0) 2N4347 2N3442 ^CEO(SUS) 120 140 V
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OCR Scan
HF9 transistor NPN Transistor 10A 70V NPN 300 VOLTS vce POWER TRANSISTOR pec 928
Abstract: Power Transistore File Number 528 HARRIS S E M I C O N D 2N3442, 2N4347, 2N6262 S E CT , p a b ility â'" 100 W (2N4347) â'" 117 W (2N3442) â'" 150 W (2N6262) m M a xim u m a re a -o l-o p e ra tio n curves lo r d c a n d p u lse o p e ra tio n JEDEC TO-204AA T h e 2N3442, 2N4347 , . 2N4347 140 120 140* 7 100 117 150 w 3 7 -6 5 to +200 . *T l , , R D F -2 ). 2-41 3 HHAS Power Transistors, 2N3442, 2N4347, 2N6262 T - 33-/3 E L E -
OCR Scan

2n4347

Abstract: 2N6262 2N4347, 2N6262 2N4347, 6262 NPN POWER TRANSISTORS High Power and High Voltage Applications DIM A B C D E F G H J K L M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to T c - 25° C Junction temperature Collector-emitter saturation voltage 1 C = 2 A; IB = 0.2 A IC = 3 A; IB = 0.3 A D.C. current gain , 5-17 2N4347, 2N6262 Collector current Collector current (peak) Base current Base current (peak
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OCR Scan

2N6274

Abstract: transistor 2n6512 2.0 2.5 150 2.8 TO-3 2N4347 2N4347 100 140 120* 120 4.0 15 2.0 1.7 2.0 2.0 200 1.0 TO-3 2N5157
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OCR Scan
2N3902 2N5239 2N5240 2N5466 2N5467 2N5685 2N6274 transistor 2n6512 2N6511 A13L45B 413LS

2N3Q55

Abstract: 2SC1413 M X /-Y - PIN CONFIGURATION 1. BASE 2. EMiTTfcR 3. COLLECTOR ALL DIMENSIONS ARE IN MW. TO-3 Power Package Transistors (NPN) Mrrimum (V1& M ©(A) Va. Mr ttii 2N3Q55 2N3773 2N4347 '2000 125 2N6257 2W371 2NW71HV #1600 2SC1308 2SC1413 2SC1413A 3 $1000 1500 2 SC 1454 »NOTE: Vcâ'ž 'NOTE; lcc, SNOlE ; Ice,
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OCR Scan
2sc130 2N3773 transistor 2sc1454

L3713

Abstract: SDT9309 2.20 5.0 .500 2N4301 TO-61 100 80 8.0 30 120 4.0 5.0 1.00 1.20 10.0 1.300 2N4347 TO-3 140 120 7.0 15 , 2N4111 84 2N4112 84 2N4113 85 2N4301 1.0 45 2N4347 31 2N4348 86 2N5006 86
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OCR Scan
2N3232 2N3233 2N3234 2N3863 2N3864 2N5387 L3713 SDT9309 SDT9301 SDT9304 2N41

2N5296 RCA

Abstract: RCA 40373   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , lc = â'"3 A VERSAWATT ITO-2201 676 2N4347 VCEV(SUS) - 140 V lc = 4 A (TO-31 528 2N5954» VCER(SUSI , J 2N3772 2N5575 60 to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 150 to 400 , max 2N4347 120-V, 100-W Hometax ial-Base 120 130 140 15-60 2 4 2 10 120 1 2 0.2 2 2 2N3442* 140
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OCR Scan
2N1482 2N3054 2N3055 2N5296 RCA RCA 40373 amplifier ocl 2n3055 RCA 40347 2N5415 ITO-391- ITO-220 ITO-31 2N5786

2N3773 equivalent

Abstract: transistor c113 TYPICAL DEVICE TYPES: JAN2N3771. JAN2N3772. 2N3773. 2N4347. 2N4348. 2N6262 1S/B rated
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OCR Scan
2N3773 equivalent transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 C-112 C-113

RCA 40313

Abstract: 2N3054   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , lc = â'"3 A VERSAWATT ITO-2201 676 2N4347 VCEV(SUS) - 140 V lc = 4 A (TO-31 528 2N5954» VCER(SUSI , L 2N3771 J 2N3772 2N5575 60 to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 , [n-p-n] (silicon) fy = 0.8 MHz typ; Pj up to 150 W max 2N4347 120-V, 100-W Hometax ial-Base
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OCR Scan
2N5298 2N6478 RCA 40313 RCA 40250 2N5496 2N6103 2N5295 2NS296

RCA 40313

Abstract: RCA 528   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 150 to 400 f 2N3440 1 BFT 19,A,B , max 2N4347 120-V, 100-W Hometax ial-Base 120 130 140 15-60 2 4 2 10 120 1 2 0.2 2 2 2N3442* 140
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OCR Scan
RCA 528 RCA 40349 2n3773 rca 40349 2N6264 2N3441 RCA 2N6263 FE-20-100 2N6477 2N5491 2N5490

2N3441

Abstract: 2N1479 (n-p-n) 150W max 2N4347 120 140D 100 15-60 2 4 1 2 0.2 0.4 T0-204AA/ 2N3442 140 160D 117 20-70 3
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OCR Scan
2N1479 2N1481 2N1700 40347V1 2N1480 40348V1 00DS7

BU102

Abstract: BDX71 ) BDX12 100 120 140 5 20-70 4 â'" 31540H 94 (2N4347) 31548C BDX13 117 40 50 15 15-60 4 0.5 94
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OCR Scan
BSV90 BSV92 BSV95 BSX20 BSX27 2N2475 BU102 BDX71 40636 2N3055V 30801C BSV91 30803X

sso-12

Abstract: 2N4347 TECHNICAL DATA SEMICONDUCTOR MOTOROLA 2N3442 2N4347 5.0 AND 10 AMPERE HIGH-POWER INDUSTRIAL , Collector-Emitter Saturation Voltage - V cE(sat) = 1.0 Vdc (Max) @ lG * 2.0 Adc - 2N4347 POWER TRANSISTORS NPN , (sus) = 120 Vdc (M'ni " 2N4347 140 Vdc (Min) - 2N3442 · Excellent Second-Breakdown Capability STYLE , Junction Temperature Range Symbol V fiE O 2N4347 120 140 7.0 5.0 10 3.0 8.0 100 0.57 10 15" 7.0 - -»l , , Junction to Case Symbol 2N4347 1.75 2N3442 1.5 U nit °C/W Rfljc ·indicates JE D E C Registered Data
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OCR Scan
Q62901-B11-A Q62901-B13-C sso-12 N3442 zc 442 4347 Q62702-U38-F100 Q62702-U59-F100

2N4347

Abstract: 3632N power switches. FEATURES: * Collector-Emitter Sustaining Voltage -^ceo(sus) = 120 V (Min.) - 2N4347 = , A, lB = 0.2 A - 2N4347 MAXIMUM RATINGS Boca Semiconductor Corp. BSC FIGURE -1 POWER DERATING 140 50 75 100 125 150 175 200 TC,TEMPERATURE( °C) NPN 2N3442 2N4347 Characteristic Symbol 2N4347 , CHARACTERISTICS Characteristic Symbol 2N4347 2N3442 Unit Thermal Resistance Junction to Case Rejc 1.75 1.5 , 4.36 K 10.67 11.18 http://www.bocasemi.com 2N3442, 2N4347 NPN ELECTRICAL CHARACTERISTICS (Tc = 25Â
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OCR Scan
3632N w15c CB-19

104 cev

Abstract: 2n3442 2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for , (Max) @ IC = 2.0 Adc ­ 2N4347 · Collector-Emitter Sustaining VoltageVCEO(sus) = 120 Vdc (Min) ­ 2N4347 , Value 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 2N4347 2N3442 120 140 140 160 7.0 , . COMSET SEMICONDUCTORS 1/3 2N3442 2N4347 THERMAL CHARACTERISTICS Symbol RthJC Ratings
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OCR Scan
104 cev H1010 Q62901-B Q62702-U 38-F100

2N6262

Abstract:   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , lc = â'"3 A VERSAWATT ITO-2201 676 2N4347 VCEV(SUS) - 140 V lc = 4 A (TO-31 528 2N5954» VCER(SUSI , J 2N3772 2N5575 60 to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 150 to 400
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OCR Scan
TWX-510-224-6582

NPN Transistor 2N3055

Abstract: 2N5415   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , lc = â'"3 A VERSAWATT ITO-2201 676 2N4347 VCEV(SUS) - 140 V lc = 4 A (TO-31 528 2N5954» VCER(SUSI , J 2N3772 2N5575 60 to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 150 to 400
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OCR Scan
2N6177 2N3439 2N6213 2N6079 2N5840 2N6175 NPN Transistor 2N3055 2n1488 2N2102 TQ-66 2N358S
Showing first 20 results.