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Part : 2N4265 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 58,210 Best Price : $0.7425 Price Each : $2.25
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2N4265 Datasheet

Part Manufacturer Description PDF Type
2N4265 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 12 MinV, TO-92, 3-Pin Scan
2N4265 Central Semiconductor NPN EPOXY Transistors Scan
2N4265 Central Semiconductor NPN Epoxy - Switching and General Purpose Transistors Scan
2N4265 Motorola Motorola Semiconductor Datasheet Library Scan
2N4265 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N4265 N/A Basic Transistor and Cross Reference Specification Scan
2N4265 N/A Transistor Shortform Datasheet & Cross References Scan
2N4265 N/A Shortform Transistor PDF Datasheet Scan
2N4265 N/A Shortform Transistor PDF Datasheet Scan
2N4265 N/A Semiconductor Master Cross Reference Guide Scan
2N4265 N/A Shortform Transistor Datasheet Guide Scan
2N4265 N/A Vintage Transistor Datasheets Scan
2N4265 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N4265 Sprague Small Signal TO-92 Plastic Transistors Scan

2N4265

Catalog Datasheet MFG & Type PDF Document Tags

2N4265

Abstract: 2N4264 Symbol VCEO v CBO Ve b o 2N4264 15 30 6.0 200 350 2.8 1.0 8.0 - 55 to + 150 2N4265 12 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts m w rc 2N4264 2N4265 CASE 29-04, STYLE 1 TO-92 (TO-226AA) Ic PD pd T j , Vdc) hpE 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 VcE(sat , 2N4264 2N4265 V (B R )C B O 30 6.0 Vdc Vdc ¿¿Ade V (B R )E B O - IßE V - - 'C E X , 2N4265 ELECTRICAL CHARACTERISTICS (continued) IT A - 25D C unless otherwise noted.) Characteristic
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OCR Scan
QS 100 NPN Transistor 2N426S

2N4265

Abstract: 2904S 350 2.8 1.0 8.0 -55 to +150 2N4265 12 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts m wr c °C 2N4264 2N4265 CASE 29-04, S T Y LE 1 TO-92 (TO-226AA) GENERAL PURPOSE TRANSISTORS NPN SILICON ELECTRICAL , Vdc) ON CHARACTERISTICS DC Current Gain dC = 1.0 mAdc, V c e = 10 Vdc) 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 2N4264 2N4265 v CE(sat) - | Symbol | Min | Max | Unit Vdc 2N4264 2N4265 VfBRÏCEO 15 12 V{BR|CBO V(BR)EBO 'BEV CEX - 0.1 10 100 30
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OCR Scan
2904S D103324

2N4265

Abstract: 2N4264 Transistors 2N4264 2N4265 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4264 2N4265 Collector ­ Emitter Voltage VCEO Collector ­ Base , Collector ­ Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N4264 2N4265 Vdc , 2N4265 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N4264 2N4265 25 50 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N4264 2N4265 40 100 160
Motorola
Original
vsat 2N4264/D 226AA

2n4265

Abstract: 2N4265 Si NPN LP HF BJT 3.10 Transistors Transistors Bipolar Si NPN. http://store.americanmicrosemiconductor.com/2n4265.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N4265 2N4265 Si NPN LP HF BJ T Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , : Americanmicrosemi 2N4265 $ 3.88 $ 3.10 $ 0.77 Total Price $ 3.10 Company Testimonials Store Policies
American Microsemiconductor
Original

2n426

Abstract: 2n4265 tu re R a ng e 2N4264 2N4265 Symbol v CEO v CBO v EBO 2N4264 15 30 2 N4265 12 Unit , A d c )(1 ) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-21 2N4264, 2N4265 , , FETs AND DIODES 2-22 2N4264, 2N4265 C U R R E N T G A IN C H A R A C T E R IS T IC S F IG U R E , DIODES 2-23 2N4264, 2N4265 " O N " C O N D IT IO N C H A R A C T E R IS T IC S FIG U R E 5 - C O , 2N4264, 2N4265 D Y N A M I C C H A R A C T E R IS T IC S FIG U R E 8 - D ELA Y T IM E F IG U R E 9
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OCR Scan
2n426
Abstract: 2N4265 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A).1uØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq300M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition American Microsemiconductor
Original

2N3646

Abstract: MPS3013 M O T O R O L A SC -CDIODES/OPTOJ 34 DE | b 3 b ? a S 5 0D37Tfl(a [ 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37986 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) T " %5~- t y DIE NO. - NPN LINE SOURCE - DMB104 2C3511 » This die provides performance similar to that of the following device types: 2N2501* 2N3009 2N3013 2N3014 2N3211 2N3510* 2N3S11 2N3646 2N3647 2N3648 2N4264 2N4265 2N5772 MMT3014 MPS2501 MPS3013 MPS3646 MPS5128 MPS5129 Designed for logic
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OCR Scan
SILICON SMALL-SIGNAL DICE SILICON DICE motorola 0D37T MIL-S-19500

MPSL08

Abstract: MPS3640 Package Complement © MPS834 2N5134 EN3011 2N4274 EN744 2N4265 25 10 12 12 12 12 12 15 15 15 15
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OCR Scan
MPSL08 MPS3640 TO-106 2N5140 EN2894A 2N2894A EN2984A 2N5910

NS100-MA

Abstract: MPS634 100 m A 4 pF 300MHz@10mA 35nS@100mA 2N4265 T092 30 V lOOnA @ 12 V CCEX) 50 100-400 90 55 35 @
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OCR Scan
MPS706 MPS706A MPS634 MPS2369 2N2713 MPS2713 NS100-MA 2n5845 2N3606 NS-500 500MH

2N3565

Abstract: 2N5137 10 0.22 10 300 4 â'" 20 â'" â'" TO-92 2N4265 12 12 6 100 400 10 10 0.22 10 300 4 â'" 20 â
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OCR Scan
2N5137 2N5172 2N5219 2N5220 2N5225 2N5368 2N3565 2N5381 2N4967 2N5136 2N5136- 2NS223
Abstract: V V V min ma mA V V mA MHz pF 2N3646 2N4264 2N4265 2N4274 -
OCR Scan
2N5371 2N5380 2N5810 2N5812 2N5814 2N5816

2N4265

Abstract: 2N3565 -92 2N4265 12 12 6 100 400 10 10 0.22 10 300 4 â'" 20 â'" â'" TO-92 2N4274 30 12 4 35 120 10 1 0.2 10 400 4
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OCR Scan
2N5369 2N5370 2N5824 2N5856 2N3565 to-106 2N5858 2N3692 T0-105 2N5818 2N5825

AL102 ATES

Abstract: 2N2222A mps , BSY17-21, 2N4265. 2N4123. â  BF188, BSX20. BSY18-21, 2N4265. 2N4123. MPS3708. MPS3709. 2N4124. BCY59 , . 40412, 2N4410. MPS634, 2N929-930. BSX20, 2N4265. 2N4265. 2N964-972-4265. 2N964-972. 2N2145. ' MPS6530 , , 2N2639-2640. BSX20, 2N4265. 2N797. BC107B, BCY58-65-85EVII, BFY27, MPSA05, 2SC648, 2N2484. BC107-107B, BCY59 , , 2N708-2926-3710. BC168A-238A, MPS2715, TIS98, 2SC458, 2N3663. BC168A-238A, MPS2716, 2SC458, 2N3683. 2N2635. 2N4265.
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OCR Scan
2N2431 AL102 ATES 2N2222A mps AD149 KR206 TIS58 RS276-2001 RS276-2002 RS270-2003 RS276-2004 BS276-200S RS276-2008

diode bsy28

Abstract: CS9018 RF LOW-POWER SILICON NPN Item Number Part Number Manufacturer V(BR)CEO (V) fT (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) tr Max (5) tf Max (5) Po Max (W) Toper Max eC) Package Style V(BR)CEO BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E >= 10 V, (Contld) NthAmerSemi NthAmerSemi Hybrid Semi See Index See Index See Index NthAmerSemi Motorola Hybnd Semi SDace Power -cnmsoriSeml
Advanced Semiconductor
Original
diode bsy28 CS9018 BF152 BF158 2N3984 bsy28 diode

Npn 310

Abstract: 2N4126 2N4264 2N4265 NPN PNP PNP NPN NPN TO-92 TO-92 TO-92 TO-92 TO-92 310 310 310
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OCR Scan
Npn 310 2N3903 2N3904 2N3905 2N3906 2N4125 2N4400

2N2222A mps

Abstract: 2N512AB / 2N4247 2N4264 2N4265 2N4271 2N4272 2N4273 2N4300 2N4305 2N4307 2N4309 2N4311 2N4320/ 2N4337 Page 39 32
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OCR Scan
1N120 1N445 1N589 1N2637 2N512AB 2n2222 mps 2N698 SCR 1n4007 - 2n4001 1N1096 1N34A 1N44/ 1N55AB 1N100 1N102 1N103

2N4265

Abstract: 2N2926-1 '" 100 1 20 â'" 200 1 0.22 0.65 0.80 10 0.35 0.75 0.95 100 4 300 â'" 10 35"S1 2N4265 CT 310 NPN 30 12 6
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OCR Scan
2N2711 2N2712 2N2926-1 2N5832 Sprague Electric 2N3859 660111 sprague TO92 2N2714 2N2923 2N2924 2N2925
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