2N4150 MIL-PRF-19500 2N4150J 2N4150JX 2N4150JV MIL-STD-750 MIL-PRF-19500/394

Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low

2N4150 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low power, High voltage · NPN silicon transistor · Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E · JAN level (2N4150J 2N4150J) · JANTX level (2N4150JX 2N4150JX) · JANTXV level (2N4150JV 2N4150JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Features · · · · Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 3101 Reference document: MIL-PRF-19500/394 MIL-PRF-19500/394 Benefits · Qualification Levels: JAN, JANTX, and JANTXV · Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 70 Collector-Base Voltage VCBO 100 Unit Volts Volts Emitter-Base Voltage VEBO 10 Volts IC 10 A 1 5.7 5 50 .175 .020 W mW/°C W mW/°C -65 to +200 °C Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 100°C PT PT Thermal Resistance RJA RJC Operating Junction Temperature Storage Temperature TJ TSTG Copyright 2002 Rev. F °C/W Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4150 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 100 mA Typ Max Units Volts 70 Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 100 Volts VCB = 80 Volts, 10 100 Collector-Emitter Cutoff Current ICEO VCE = 60 Volts 10 µA nA µA Collector-Emitter Cutoff Current ICEX1 ICEX2 VCE = 60Volts, VEB= .5Volts VCE = 60Volts, VEB= .5Volts, TA = 150°C VEB = 7 Volts VEB = 5 Volts 10 100 µA 10 100 µA nA Emitter-Base Cutoff Current IEBO1 IEBO2 On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 1 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 10 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts TA = -55°C IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A IC = 5 A, IB = 500 mA IC = 10 A, IB = 1 A Min 50 40 10 20 Test Conditions VCE = 10 Volts, IC = 200 mA, f = 10 MHz VCE = 5 Volts, IC = 50 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max 200 120 Units 1.5 2.5 0.6 2.5 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| hFE COBO Typ 1.5 7.5 40 160 350 pF 50 500 1.5 500 ns Switching Characteristics Delay Time Rise Time Storage Time Fall Time Copyright 2002 Rev. F td tr ts tf IC = 5 A, IB = 500 mA, IC = 5 A, IB1= -IB2 = 500 mA µs ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2