2C5154 2N4150 2N51512 2N5154 2N5339 2N3998 2N3999 2N4150S 2N5152 2N5152L 2N5154L

Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150, 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa

Data Sheet No. 2C5154 2C5154 Generic Packaged Parts: Chip Type 2C5154 2C5154 Geometry 9201 Polarity NPN 2N4150 2N4150, 2N51512 2N51512, 2N5154 2N5154, 2N5339 2N5339 Chip type 2C5154 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium power amplifier and switching and wide band amplifier applications. Features: · Medium power ratings 2N3998 2N3998, 2N3999 2N3999, 2N4150 2N4150, 2N4150S 2N4150S, 2N5152 2N5152, 2N5152L 2N5152L, 2N5154 2N5154, 2N5154L 2N5154L, 2N5339 2N5339 Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness Chip Area Top Surface Al - 37.5 kÅ min. Au - 6.5 kÅ nom. 12 mils x 40 mils 12 mils x 30 mils 8 mils nominal 100 mils x 100 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter Test conditions Min Max Unit BVCBO IC = 10 mA, IE = 0 80 - V dc ICES VCE = 60 V, IE = 0 - 1.0 µA IEBO VBE = 4.0 VC, IC = 0 - 1.0 µA hFE IC = 50 mA dc, VCE = 5.0 V 50 - - hFE IC = 2.5 A dc, VCE = 5.0 V 70-200 -Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%.