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JANTXV2N4150S Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTX2N4150S Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTX2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JAN2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANTXV2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
JANS2N4150 Microsemi Corporation Small Signal Bipolar Transistor, 10A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy

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2N4150 Datasheet

Part Manufacturer Description PDF Type
2N4150 Microsemi NPN Power Silicon Transistor Original
2N4150 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original
2N4150 Semico Chip: geometry 9201 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original
2N4150 Semico Type 2N4150 Geometry 9201 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=15M / Pwr(W)=5 Original
2N4150 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N4150 API Electronics COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan
2N4150 API Electronics Short form transistor data Scan
2N4150 API Electronics Short form transistor data Scan
2N4150 Crimson Semiconductor Transistor Selection Guide Scan
2N4150 Diode Transistor NPN Transistor Selection Guide Scan
2N4150 Diode Transistor Transistor Short Form Data Scan
2N4150 General Transistor Power Transistor Selection Guide Scan
2N4150 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N4150 Motorola Motorola Semiconductor Datasheet Library Scan
2N4150 N/A Basic Transistor and Cross Reference Specification Scan
2N4150 N/A Transistor Shortform Datasheet & Cross References Scan
2N4150 N/A Shortform Transistor PDF Datasheet Scan
2N4150 N/A Shortform Transistor PDF Datasheet Scan
2N4150 N/A Catalog Scans - Shortform Datasheet Scan
2N4150 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N4150

Catalog Datasheet MFG & Type PDF Document Tags

2N4150

Abstract: Back to Bipolar Power Transistors TECHNICAL DATA 2N4150, 2N4150S JAN, JTX, JTXV 2N5237 , Junction-to-Ambient 1) 2) Symbol VCEO VCBO VEBO IC PT TJ, Tstg 2N4150 2N4150S 70 100 2N4150 2N4150S 120 150 10 10 1.0 5.0 -65 to +200 Max. 0.020 2N4150 2N4150S 170 200 Unit Vdc Vdc Vdc Adc W 0 , Voltage IE = 10 µAdc Collector-Emitter Breakdown Voltage IC = 0.1 Adc V(BR)EBO 2N4150, 2N4150S 2N5237 , Cutoff Current VCB = 80 Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S 2N5237
New England Semiconductor
Original
MIL-PRF-19500/394 1000C

2N4150

Abstract: 2N4150S MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN , VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150, 2N4150S , VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc , Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types
Microsemi
Original
70VDC 110VDC T4-LDS-0014

2N4150

Abstract: 1000C Level 2N4150 2N4150S 2N5237 2N5237S JAN JANTX JANTXV 2N5238 2N5238S MAXIMUM RATINGS , , 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Vdc 2N4150, 2N4150S 2N5237 , Adc, VCE = 5.0 Vdc Symbol 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150 , Vdc, f = 1.0 kHz 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Output Capacitance VCB = 10 Vdc , Max. Unit ICEO 10 10 10 µAdc IEBO 2N4150, 2N4150S 2N5237, 2N5237S 2N5238
Microsemi
Original

2N4150

Abstract: Data Sheet No. 2N4150 Generic Part Number: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/394 Features: · · · · Power switching transistor for high speed switching applicatons. Housed in a TO-5 case. Also available in chip form using the 9201 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets , PT PT C C Data Sheet No. 2N4150 Electrical Characteristics o TC = 25 C unless
Semicoa Semiconductors
Original
MIL-PRF-19500/394C

2N5237

Abstract: 2n52 TECHNICAL DATA 2N4150, 2N4150S JAN, JTX, JTXV 2N5237, 2N5237S JAN, JTX, JTXV 2N5238, 2N5238S , Temperature Range Symbol 2N4150 2N4150S 2N4150 2N4150S 2N4150 2N4150S Unit VCEO VCBO , Breakdown Voltage IC = 0.1 Adc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 2N4150, 2N4150S , / Fax: (978) 689-0803 3/98 REV: C Page 1 of 2 2N4150, 2N4150S, 2N5237, 2N5237S, 2N5238, 2N5238S , = 80 Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX 10 10 10 µAdc
New England Semiconductor
Original
2n52

2n5237

Abstract: MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN , VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150, 2N4150S , VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc , Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types
Microsemi
Original

2n4150

Abstract: NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features · · Available in JAN, JANTX, and , ) @ TA = +25 °C (2) Symbol VCEO VCBO VEBO IC PT Top, Tstg RJC RJA 2N4150 70 100 2N5237 120 150 10.0 , 0.1 mAdc 2N4150 2N5237 2N5238 Collector - Emitter Cutoff Current VBE = 0.5 Vdc, VCE = 60 Vdc VBE = 0.5 , Current VCB = 100 Vdc VCB = 150 Vdc VCB = 200 Vdc VCB = 80 Vdc 2N4150 2N5237 2N5238 All Types 2N4150 2N5237 2N5238 2N4150 2N5237 2N5238 Symbol V(BR)CEO Mimimum 70 120 170 -Maximum -Units Vdc ICEX 10
Aeroflex / Metelics
Original
MIL-PRF-19500/384 888-641-SEMI
Abstract: NPN Power Silicon Transistor 2N4150, 2N5237 & 2N5238 Features â'¢ Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/384 â'¢ TO-5 Package Maximum Ratings Symbol 2N4150 , Collector - Emitter Breakdown Voltage IC = 0.1 mAdc 2N4150 2N5237 2N5238 Mimimum Maximum Units , 60 Vdc VBE = 0.5 Vdc, VCE = 110 Vdc VBE = 0.5 Vdc, VCE = 160 Vdc 2N4150 2N5237 2N5238 ICEX , 160 Vdc 2N4150 2N5237 2N5238 ICEO - 10 10 10 µAdc IEBO - 10 0.1 Aeroflex / Metelics
Original

2N4150

Abstract: 2N4150S , SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S, JAN, JANTX , visual (design verification) 4/ Subgroup 2 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S , 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S 70 120 170 V dc V dc V dc 3061 VEB = 7 , 10 10 10 Emitter to base cutoff current A dc A dc A dc ICEO1 2N4150, 2N4150S 2N5237 , emitter cutoff current 3041 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Bias condition A
-
Original
JAN 2N4150 equivalent MIL-PRF-19500/394M MIL-PRF-19500/394L MIL-PRF-19500 JANHCA2N4150 JANKCA2N4150 JANHCB2N4150
Abstract: NPN Power Silicon Transistor 2N4150 Features â'¢ Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 â'¢ TO-5 Package Maximum Ratings Symbol 2N4150 Units Collector - Emitter Voltage Ratings VCEO 70 Vdc Collector - Base , VCB = 80 Vdc ICBO - 10 0.1 Revision Date: 4/22/2014 μAdc 1 2N4150 Electrical , Date: 4/22/2014 2N4150, 2N5237 & 2N5238 Outline Drawing Note: All dimensions are inches [mm]. Aeroflex / Metelics
Original

Stancor C-2691

Abstract: 2N4150 SWITCHING TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND , 2075 n = 4 device, c = 0 Subgroup 2 Collector to base cutoff current 2N4150, 2N4150S 2N5237 , 4.5.1) V dc V(BR)CEO 70 120 170 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S See , = 60 V dc VCE = 110 V dc VCE = 160 V dc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Collector to emitter cutoff current 3041 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Bias
-
Original
Stancor C-2691 MIL-STD-750 METHOD 1022 MIL-PRF-19500/394G MIL-PRF-19500/394F
Abstract: POWER TRANSISTORS 10 Amp, 70V, Planar NPN JAN, JANTX & JANTXV 2N4150 FEATURES · M e ets , °C M E C H A N IC A L S P E C IF IC A T IO N S JAN , J A N T X & J A N T X V 2N4150 T0-5 INCHES v , 2-26 UNITRODE jan ; JANTX & JANTXV 2N4150 E L E C T R IC A L S P E C IF IC A T IO N S (at , > tn II > < _ > II P R IN T E D IN U .S .A . JAN, JANTX & JANTXV 2N4150 Forward Bias , & JANTXV 2N4150 Sw itching Speed Characteristics Sw itching Speed Characteristics lc - C O -
OCR Scan
MIL-S-19500/394

2N5339

Abstract: 2N4150 Data Sheet No. 2C5154 Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150, 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium power amplifier and switching and wide band amplifier applications. Features: · Medium power ratings 2N3998, 2N3999, 2N4150, 2N4150S, 2N5152, 2N5152L, 2N5154, 2N5154L, 2N5339 Mechanical Specifications
Semicoa Semiconductors
Original
2n5339 data sheet

A23041

Abstract: 2N4150 POWER TRANSISTORS JAN JANT* & JANTXV 2N4150 10 Amp, 70V, Planar NPN FEATURES â'¢ Meets MIL-S-19500/394 â'¢ Collector-Base Voltage: up to 100V â'¢ Peak Collector Current: 10A â'¢ Fast Switching â , .029-045 .736-1.14 L .100 2.54 TO-5 72 run UNITRODE JAN, JANTX & JANTXV 2N4150 ELECTRICAL , 95-1064 73 PRINTED IN U.S.A. JAN, JANTX & JANTXV 2N4150 Forward Bias Safe Operating Area 12 5 10 20 , , JANTX & JANTXV 2N4150 Switching Speed Switching Speed Characteristics Characteristics lc â
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OCR Scan
A23041 Unitrode transistors data To5 2N41S0

TRANSISTOR SE 135

Abstract: 2N3421 ' f e Typical Device Types: 2N3418 - 2N3421, 2N4150 nnAi u ui ItPfJ 0.1(XT lC B = 1 0 m A ebo General Semiconductor Industries, Inc. | NPN T R A N S IS T O R C H IP "11" DIODE & TRANSISTOR CHIPS 10 AMP Fast Switching Bonding Pad Areas Base (1) 31 x 13.5 mils Emitter (1) 19 x 10 , ITCHING SYMBOL
-
OCR Scan
TRANSISTOR SE 135 11C1 diode p 11C-1 11C-2

2n3920

Abstract: 2n8249 0043592 A P I A P I ELECTRONICS INC _ 2 6 C 2b D eT | O D ^ S 1 ^ n- - a< ELECTRONICS INC 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048 2N5049 2N5083 2N5084 2N5085 2N5152 2N5154 2N5218 2N5237 JAN 2N5237 JT X * 2N5237 2N5238 2N5264 2N5288 2N5289 2N5317 2N5319 2N5327 2N5328 2N5540 2N5542 2N5552 2N5559 2N5622 2N5624 2N5626 2N5628 2N5632 2N5633 2N5634 2N5730 2N5758
-
OCR Scan
2n8249 2N5759 2N5760 2N5854 2N5877 2N5878 2N6077

2N4150

Abstract: NS2N General ^ ^ Semiconductor ^ ® Industries, Inc. D IFFU SED S ILIC O N PLANAR PA SSIVATED TR A N SISTO R S 2N4150 NPN SILICON HIGH POWER T R A N SIST O R S These devices are designed for use in , re lia bility. JAN /JA N TX 2N4150 transistors to MIL-S-19500/394 are also available. FEATURES · · · , derating factor V ceo V CBO V EBO -6 5 °C to 2 0 0 °C + 200°C + 300°C 5 W atts 50 m W /0C 2N4150 JAN 2N4150 Maxim um Voltages and Current C ollector to Em itter Voltage C ollector to Base Voltage E m
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OCR Scan
NS2N
Abstract: 20 40 50 Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JT X * 2N4150 2N4301 2N4347 2N4348 -
OCR Scan
111/I 2N6128 2N6232

2N4150

Abstract: 2N4150J 2N4150 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose · Low power, High voltage · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N4150J) · JANTX level (2N4150JX) · JANTXV level (2N4150JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for , www.SEMICOA.com Page 1 of 2 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS
Semicoa Semiconductors
Original
Abstract: 2N4150 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N4150J) · JANTX level (2N4150JX) · JANTXV level (2N4150JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · General purpose · Low , www.SEMICOA.com 2N4150 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics Semicoa Semiconductors
Original
Abstract: ¿888888888 p |M iwi B f i HBf ssssBP e m .f rHHHHHHHH h. M m1 1 itittnnnnn h hhhhhk. > >itH -
OCR Scan
L-PRF-19500/394

4116 2n

Abstract: j 5804 Data Sheet No. 2C5154 Generic Packaged Parts: Chip Type 2C5154 Geometry 9201 Polarity NPN 2N4150, 2N51512, 2N5154, 2N5339 Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for medium power amplifier and switching and wide band amplifier applications. Features: · Medium power ratings 2N3998, 2N3999, 2N4150, 2N4150S, 2N5152, 2N5152L, 2N5154, 2N5154L, 2N5339 Mechanical Specifications
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OCR Scan
2N2891 2N3186 4116 2n j 5804 tr j 5804 2N375 N5339 2n3442 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715
Showing first 20 results.