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2N4036 Central Semiconductor Corp Small Signal Bipolar Transistor, 1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
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2N4036 Datasheet

Part Manufacturer Description PDF Type
2N4036 Boca Semiconductor PNP SILICON PLANAR TRANSISTOR - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Original
2N4036 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 65V 1A TO-39 Original
2N4036 Continental Device India General Purpose Transistor, TO-39 Original
2N4036 Motorola CASE 79.04, STYLE 1 TO-39 (TO-205AD) - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Original
2N4036 On Semiconductor TRANS GP BJT PNP 65V 1A 3TO-39 - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Original
2N4036 Philips Semiconductors PNP switching transistor - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Original
2N4036 Philips Semiconductors Small-signal Transistors Original
2N4036 Semelab High Speed Meduim Voltage Switches Original
2N4036 Siemens Cross Reference Guide 1998 Original
2N4036 STMicroelectronics MEDIUM-SPEED SWITCH Original
2N4036 Advanced Semiconductor Silicon Transistors Scan
2N4036 Central Semiconductor BJT: PNP: Small Signal Transistor: IC 1A Scan
2N4036 Central Semiconductor PNP METAL CAN Transistors Scan
2N4036 Crimson Semiconductor Transistor Selection Guide Scan
2N4036 Fairchild Semiconductor PNP general purpose transistor. - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Scan
2N4036 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N4036 Ferranti Semiconductors Power Transistors 1977 Scan
2N4036 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N4036 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N4036 General Electric Medium power silicon N-P-N planar transistor. - Pol=PNP / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=40-140 / fT(Hz)=60M / Pwr(W)=1 Scan
Showing first 20 results.

2N4036

Catalog Datasheet MFG & Type PDF Document Tags

2N4036

Abstract: 2N4314 . 11 - Typical collector cutoff current vs. junction temperature for 2N4036. -600 -500 4 E t- te » o , («ol)-V 92LS-l26aRf Fig. 12- Typical saturation- voltage characteristics for 2N4036. Z 4 6 e z -100 , CHANNEL 6 z.io6n Fig. 13 - Typical saturated switching times for type 2N4036. 92LS-I2C2RS Fig. 14 - Circuit used to measure switching times for type 2N4036. 90* - g 10% r \ -1â'"r- â'"♦l'oh1*â , File Number 216 2N4036, 2N4037, 2N4314 Medium-Power Silicon P-N-P Planar Transistors General-Purpose
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OCR Scan
transistor 2N4314 2N4036 solid state jf27 tr 2n 60b I292 G01711E JEDECTO-205AD 0D1711 92CS-222H 0-20C

2N4036

Abstract: 2n4037 MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4036 2N4037 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 Unit Collector ­ Emitter Voltage VCEO ­ 65 ­ 40 Vdc , Symbol Thermal Resistance, Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W , = 0) VCEO(sus) 2N4036 2N4037 Collector ­ Base Breakdown Voltage (IC = ­ 0.1 mAdc) 2N4037
Motorola
Original
2n4037 motorola MOTOROLA TO205AD 2N4036/D 205AD

2n4036

Abstract: 2N4037 EBO b < C Pd 2N4036 -6 5 -90 - 7.0 - 0 .5 - 1 .0 5.0 28.6 2N4037 -40 - 60 -7 .0 Unit Vdc Vdc Vdc Ade Ade 2N4036 2N4037 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 5.0 28.6 1.0 5.72 Watts , Characteristic Thermal Resistance, Junction to Case Symbol Rfiuc 2N4036 35 2N4037 35 GENERAL PURPOSE , ) (I q = -0 .1 mAdc) 2N4036 2N4037 2N4037 2N4036 2N4037 2N4036 2N4037 2N4036 2N4037 VCEOtsusJ VfBRICBO , Gain de = -0 .1 mAdc, V ce de = - 1.0 mAdc, V ce (lc = = = - 1 0 V) - 1 0 V) 2N4036 2N4037
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2n4036

Abstract: MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector â'" Emitter Voltage VCEO â'" 65 , Thermal Resistance, Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W , Voltage(1) (IC = â'" 100 mAdc, IB = 0) VCEO(sus) 2N4036 2N4037 Collector â'" Base Breakdown
Motorola
Original

2N4036

Abstract: 2N4314 a R I Fig. 11 - Typical c o lle cto r c u to ff current vs, ju n c tio n tem perature fo r 2N4036. , 2N4036. Fig. 14 - C irc u it used to measure sw itching times fo r type 2N4036. -20us-*j 90% - , / _ H ig h-S p eed Pow er Transistors File Number 216 2N4036, 2N4037, 2N4314 Medium-Power , TO-20SAD TER M IN AL DESIGNATIONS T h e 2N4036, 2N4037, and 2N4314 are doubled-dlffused , 2N4036 is useful in high-speed saturated switching applications. MAXIMUM RATINGS, Absolute-Maximum
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and/tp 4036 92LS-1257R1 92LS-I295

2n4037

Abstract: 2N4036 MOTOROLA Order this document by 2N4036/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N4036 2N4037 PNP Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS Symbol 2N4036 2N4037 Unit Collector ­ Emitter Voltage VCEO ­ 65 ­ 40 , , Junction to Case 2N4036 2N4037 Unit RqJC 35 35 °C/W ELECTRICAL CHARACTERISTICS (TA , CHARACTERISTICS Collector ­ Emitter Sustaining Voltage(1) (IC = ­ 100 mAdc, IB = 0) VCEO(sus) 2N4036 2N4037
Motorola
Original
2n4036 equivalent

2n4036

Abstract: MOTOROLA TO205AD MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2N4036 2N4037 BASE MAXIMUM RATINGS Rating Symbol 2N4036 2N4037 , +200 230 TH ERM AL CHARACTERISTICS Characteristic Symbol 2N4036 2N4037 Unit Thermal Resistance , Vdc, lc = 0) (VEB = -5 .0 Vdc, lc = 0) v CEO(sus) 2N4036 2N4037 v (BR)CBO Vdc -6 5 -4 0 -6 0 Vdc mAdc - - 0 1 -10 0 nAdc - - -1.0 -0.25 nAdc - - -1 0 -1 .0 2N4037 'CEX 2N4036 2N4037 'CBO
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B0217

2n4036

Abstract: 2N4036 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N4036 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N4036 at our online store! 2N4036 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N4036 Information Did you Know , Request a Quote Test Houses 2N4036 Specifications Military/High-Rel : N V(BR)CEO (V) : 65 V(BR)CBO (V
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N4314

Abstract: 2N4036 characteristics fo r 2N4036. SECTOR 27E D CO LLECTO R CURRENT ( I c ) - m A 9 2 L S -I2 8 7 R I SEMICOND Fig. 13 - Typical saturated switching times fo r type 2N4036. Fig. 14 - C ircuit used to measure sw itching times fo r type 2N4036. HARRIS ' 'ONf*- {*- OFF - Fig. 15 · Oscilloscope , P ow er Transistors ~r-3^>- ì i F ile N u m b e r 2N4036, 2N4037, 2N4314 216 HARRIS , h e 2N4036, 2N4037, a n d 2N 4314 are d o u b le d -d iffu s e d , e p ita x ia l-p la n a r, s ilic
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92LS-I267RI 92LS-I282 92CS-2221I PN4036

2N4036

Abstract: Schlum berger Com pany 2N4036/2N4037 r-z? -^ PNP G eneral Purpose Transistor ABSOLUTE M AXIM , oltage lc C o lle c to r C u rre n t (C ontinuous) lB Base C u rre n t (C ontinuous) PACKAGE 2N4036 , u to ff C urrent C o lle cto r C u to ff C u rre n t C o lle c to r C u to ff C urrent 2N4036 MIN , temperature of 200° C and (2N4036) junction-to-case thermal resistance of 35°C /W (derating factor of 28.6 m W , 4 0 DS 7 S 7 D 7 T ~ 8 84 4D D 27 2 75 57 70 0 D * 2N4036/2N4037 T -3 A . X2
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2N4036/2N4037

2N4036

Abstract: 2n4037 2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small , TJ, Tstg JC 2N4036 90 65 7.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4036 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V 1.0 ICBO VCB=60V ICEX VCE=85V, VEB , V V V MHz pF ns ns R1 (1-April 2010) 2N4036 2N4037 PNP SILICON TRANSISTOR TO
Central Semiconductor
Original
2N40* Central

2N4036

Abstract: 2N4037  2N4036 2N4037 Central Semiconductor corp. Central semiconductor corp. 41 ! , ) SYMBOL 2N4036 2N^037 UNIT Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage V , =25°C) SYMBOL TEST CONDITIONS 2N4036 MIN 2N4037 MAX MIN MAX UNIT cbo Vcb=60V 0.02 0.25 uA 1 eb0 Veb
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2N4036

Abstract: 2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor , Temperature ­ 0.5 A 1 7 W W ­ 65 to 200 °C 1/5 2N4036 THERMAL DATA R t h j- cas e , IC = 0 f = 1 MHz V ­ 1.1 V CE = ­ 10 V h F E* ­ 0.65 ns 110 ns 700 2N4036 Test Circuit for ton, toff. 3/5 2N4036 TO39 MECHANICAL DATA mm inch DIM. MIN. A , (typ.) L D A G I E F H B L P008B 4/5 2N4036 Information
STMicroelectronics
Original

2N210

Abstract: 2N4036 2N2102 - 2N4036 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N210?(NPN) AND 2N4036(FNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER , icev iebo %e * 2N2102 MIN MAX 120 80 65 7 10 20 40 25 10 35 120 2N4036 MIN MAX 90 85 65 7 100 , "MICROTRON" 430181-6 -3-003361). : 3-092423 - uonxinueo. - - - PARAMETER SYMBOL 2N2102 MIN MAX 2N4036 MIN , ® 2N4036 TO OSCILLOSCOPE tr< IB n« Z|N » 100 kii Ptot VS TA *tOt V (W) Si
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OCR Scan
2N4056 rG510 2N21Q2 150OC VGE-10V VCE-10V 8100B

2N2102

Abstract: 2N4036 V 2N2102 2N4036 COMPLEMENTARY SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES Wi i I « ^M mm-m |p t ; ^ ¿P. . . CASE TO-39 THE ?N210?(NPN) AND 2N4036(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL. AS" FOR SWITCHING , otherwise noted) SYMBOL 2n2102 min max 2N4036 MIN MAX UNIT 90 V V 85 V 65 V 7 V nA 100 nA TEST CONDITIONS , +4V o -30V 120Ã1 tr
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TAC250C RG-510A IC-150
Abstract: 2N2102 â'¢ 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210?(NPN) AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER , BVEBO Collector Cutoff Current ICBO PARAMETER * * 2N4036 [u n i t MIN MAX 90 V ,   3 - 8 9-2 4 2 3 . - - - uon x m u e u - - - SYMBOL PARAMETER 2N2102 MIN MAX 2N4036 , 200A 20uS i oV0UT 120Ã1 r 9 V (w ) 5pF -Ar AA- 2N4036 300a tr -
OCR Scan
BOX69477 0810B

sot511

Abstract: transistor 2n4036 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor , Jun 19 Philips Semiconductors Product specification PNP switching transistor 2N4036 , specification PNP switching transistor 2N4036 LIMITING VALUES In accordance with the Absolute Maximum , transistor 2N4036 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT5/11 , Product specification PNP switching transistor 2N4036 DEFINITIONS Data sheet status Objective
Philips Semiconductors
Original
sot511 transistor 2n4036 BP317 MAM318 SCA54

2N4036

Abstract: 2N4036 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.89 (0.35) 9.40 (0.37) 7.75 (0. 305) 8.51 (0. 335) 4.19 (0. 165) 4.95 (0. 195) 2. 54 (0.100 , (0. 305) 8.51 (0. 335) dia. 3 0.66 (0. 026) 1.14 (0. 045) The 2N4036 is a silicon , ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated 2N4036 VCBO Collector ­ Base , °C Prelim. 7/98 2N4036 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 25 °C
Semelab
Original

40636

Abstract: 40872 transistor - - - - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - 40815 (2N4036) - - - 16 45 25W Comp , ) 40876 (2N6111) 40635 (2N2102) 40634'' (2N4036) - 40360 (2N2102) - Quasi-Comp. - - 40360 (2N2102) - 25 75 40W True Comp. 40877 (TA8323) 40844 (2N6103) 40878 (TA8326) 40635 (2N2102) 40634 (2N4036) -
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OCR Scan
2N6386 TA8201 2N3055 40636 40872 transistor 40872 40871 npn 40872 2N6292 2N5492 2N5840 2N6320

RCA 40411 transistor

Abstract: rca 40411 ] 2N2102 [N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N5322 [P-N-P] F 2N6178 [N-P-N] Nnily Designation 2N6180 , V hpE = 40 120 ca 150 mA lT = 120 MHz mm. CT 106E 2N4036 VCERISUSI - -85 V hpE - 40-140 0 150 mA fj , VCER1SUS) »80V lc - 1 A (TO-39) 106E 2N4036 VCER (SUS) - -85 V lc-1 A (TO-39) 216 E 2N6178 Vcer(SUS) , (2N6111) - - - - - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - 40815 (2N4036) - - - 16 45 25W , (2N5492) 40876 (2N6111) 40635 (2N2102) 40634'' (2N4036) - 40360 (2N2102) - Quasi-Comp. - - 40360
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OCR Scan
RCA 40411 transistor rca 40411 BUX18 transistor audio amplifier with rca 40411 RCA 40872 2n3283 ITO-391 80-12SW 2N3879 2N6482 2N6354 2NS038

2N40

Abstract: Symbol v CEO v CBO vebo 2N4036 -6 5 -9 0 - 7 .0 - 0 .5 - 1 .0 2N4037 -4 0 -6 0 - 7 .0 Unit Vdc Vdc Vdc A de Ade 2N4036 2N4037 CASE 79-04, STYLE 1 TO-39 (TO-205AD) Iß >C PD 5 .0 2 8 .6 , to C a s e GENERAL PURPOSE TRANSISTORS Symbol R (iJC 2N4036 35 2N4037 35 Unit C W , MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2N4036, 2N4037 FIGU RE 1 - CU R R EN T GAIN CH
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OCR Scan
2N40

2N4036

Abstract: 150 15 40 120 150 0.1 120 1000 TO-39 2N4036 MC10 NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW , 60 50 1000 TO-39 2N4036 ZT88 100 80 500 0.2 50 5 75 170 10 200 10 300 TO-18 - ZT86 100 80 500 0.2 , 40 120 150 60 50 1000 TO-39 ZT90/95 2N4036 90 65 1000 0.65 150 15 40 140 150 1000 TO-39 2N2102 , 2N2102 65 1000 0.5 1150 15 40 120 150 60 50 (note 1) TO-39 2N4036 BFX85 60 1000 0.35 1150 15 70 - 150 , ZT189 70 500 0.2 50 5 75 250 10 150 10 120* 250* 20 TO-18 ZT89 2N4036 65 1000 0.65 150 15 40 140 150 -
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OCR Scan

2N4036

Abstract: TRANSISTOR BC140  2N4036 2N4037 Central Semiconductor corp. Central semiconductor corp. 41 ! , ) SYMBOL 2N4036 2N^037 UNIT Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage V , =25°C) SYMBOL TEST CONDITIONS 2N4036 MIN 2N4037 MAX MIN MAX UNIT cbo Vcb=60V 0.02 0.25 uA 1 eb0 Veb
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OCR Scan
2N918 2N2708 2N3866 2N4427 BUY90 TRANSISTOR BC140 transistor 2N2219 high voltage transistor to-39 BC177 NPN transistor transistor 2n2218 bc107 transistor BUY82 BUY81
Showing first 20 results.