2N3905 2N3906 071105E 2002/96/EC C-120

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3905 / 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3905 2N3905 / 2N3906 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation Ta=25ºC Derate Above 25ºC Power Dissipation Ta=60ºC Power Dissipation Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junction to Ambient in free air SYMBOL VCEO VCBO VEBO IC PD VALUE 40 40 5.0 200 625 UNITS V V V mA mW PD PD 5.0 250 1.5 mW/ºC mW W 12 mW/ºC Tj, Tstg -55 to +150 ºC Rth (j-c) Rth (j-a) 83.3 200 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Base Cut Off Current DC Current Gain SYMBOL VCEO VCBO VEBO ICEX IBL *hFE Collector Emitter Saturation Voltage *VCE (sat) Base Emitter Saturation Voltage *VBE (sat) TEST CONDITION IC=1mA, IB=0 IC=10µA. IE=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=30V, VEB=3V IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=50mA, VCE=1V IC=100mA, VCE=1V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA 2N3905 2N3905 2N3906 2N3906 >40 >40 >40 >40 >5.0 >5.0 < 50 < 50 < 50 < 50 >30 >60 >40 >80 50-150 100-300 >30 >60 >15 >30 < 0.25 < 0.25 < 0.40 < 0.40 0.65 - 0.85 0.65 - 0.85 < 0.95 < 0.95 UNITS V V V nA nA V V V V *Pulse Condition: =300µs, Duty Cycle=2% µ 2N3905 2N3905_3906Rev_1 071105E 071105E Continental Device India Limited Data Sheet Page 1 of 5 2N3905 2N3905 / 2N3906 2N3906 PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E BC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) SMALL SIGNAL CHARACTERISTICS DESCRIPTION SYMBOL TEST CONDITION fT IC=10mA, VCE=20V, f=100MHz Transistors Frequency Cob VCB=5V, IE=0, f=100KHz Output Capacitance Cib VEB=0.5V, IC=0, f=100KHz Input Capacitance 2N3905 2N3905 >200 < 4.5 250