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2N3905 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN visit Digikey Buy
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2N3905 Datasheet

Part Manufacturer Description PDF Type
2N3905 Central Semiconductor Small Signal Transistors Original
2N3905 Continental Device India PNP SILICON PLANAR SWITCHING TRANSISTORS Original
2N3905 Diotec Si-Epitaxial PlanarTransistors Original
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Original
2N3905 Fairchild Semiconductor Small Signal Transistor Original
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Original
2N3905 On Semiconductor General Purpose Transistors PNP Original
2N3905 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
2N3905 Allegro MicroSystems General Purpose Bipolar Transistor, PNP, 40 MinV, TO-92, 3-Pin Scan
2N3905 Central Semiconductor NPN EPOXY - LOW NOISE LEVEL AMPLIFIER / NPN EPOXY - RF/IF OSCILLATOR Scan
2N3905 Central Semiconductor Low Noise Level Amp / Oscillator / Switching Transistors Scan
2N3905 Crimson Semiconductor Transistor Selection Guide Scan
2N3905 Diodes LEAD MOUNTED TRANSISTORS Scan
2N3905 Fairchild Semiconductor PNP small signal general purpose amplifier & switch. Scan
2N3905 Fairchild Semiconductor PNP General Purpose Amplifier Scan
2N3905 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3905 Ferranti Semiconductors E-Line Transistors 1977 Scan
2N3905 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N3905 General Electric Semiconductor Data Handbook 1977 Scan
2N3905 General Electric Planar epitaxial PNP Silicon Transistor. -40V, 200mA. Scan
Showing first 20 results.

2N3905

Catalog Datasheet MFG & Type PDF Document Tags

2N3906

Abstract: 2n3905 2N3905/3906 GENERAL PURPOSE TRANSISTOR · Cotlector-Em itter Voltage: V c e o " 4 0 V · Collector , Voltage Collector Cut-off Current Base Cut-off Current *D C Current Gain 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 *C olleclor-Em itter Saturation Voltage *Base-Em itter Saturation Voltage Output Capacitance Current Gain Bandwidth Product :2N3905 2N3906 Turn On Time Turn O ff Time :2N3905 2N3906 t0N toFF Sym bol BVcio BVceo BVu o Icex Ibi hfE Test C onditions lc" -10M , Ie" 0
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OCR Scan
transistor 2N3905 tr 2n3906 2n3906 PNP transistor DC current gain 3906 pnp 2N3906 PNP transistor 2N3905/3906 100MH

2N3905

Abstract: transistor 2N3905 2N3905/3906 2N3905/3906 General Purpose Transistor · Collector-Emitter Voltage: VCEO=-40V · , * DC Current Gain : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 : 2N3906 : 2N3905 , Output Capacitance Current Gain Bandwidth Product : 2N3905 : 2N3906 Turn On Time Turn Off Time : 2N3905 , International Rev. A, February 2000 2N3905/3906 Typical Characteristics VBE(sat), VCE(sat)[V , 2N3906 100 2N3905 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100
Fairchild Semiconductor
Original

2n3906

Abstract: transistor 2N3905 ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , : 09/03/2007 ST 2N3905 / 2N3906 Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE , V -VCEsat -VCEsat - 0.25 0.4 V V -VBEsat -VBEsat 2N3905 2N3906 hFE hFE hFE , Max. -ICBO 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 Min , : 09/03/2007 ST 2N3905 / 2N3906 DC Current Gain 2 VCE=1V TJ=125 C 1 hFE (Normalized
Semtech Electronics
Original
2N3903 2N3904 pin configuration NPN transistor 2N3906 2n3906 equivalent transistor data sheet transistor 2n3906 2n3905 2n3906 2N3906 plastic 2n3906 equivalent

transistor 2N3905

Abstract: 2N3906 hie ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , : 06/12/2005 ST 2N3905 / 2N3906 Characteristics at Tamb = 25 OC Parameter Symbol Min , 20 V, -IC = 10 mA, f = 100 MHz ST 2N3905 fT 200 - MHz ST 2N3906 fT 250 - , , - IC = 100 mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector
Semtech Electronics
Original
2N3906 hie ST 2n3904 transistor 2N3906 datasheet 2n3906 npn transistor 2N3906 st2n3906

2N3906

Abstract: transistor 2N3905 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR â'¢ Collector-Emitter , :2N3905 Vce=-1V, lc= â'"0.1mA 30 2N3906 60 2N3905 Vce=-1V, lc = â'" 1 m A 40 2N3906 80 2N3905 Vce=-1V, lc= â'" 10mA 50 150 2N3906 100 300 2N3905 Vce=-1V, lc= â'"50mA 30 2N3906 60 2N3905 Vce=-1V, lc= 100mA 15 2N3906 30 â'¢Collector-Emitter Saturation Voltage Ve e , :2N3905 f= 100MHz 200 MHz 2N3906 250 MHz Turn On Time ton Vcc=-3V, Vbe = -0.5V 70 ns Turn Off
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OCR Scan
transistor T43 S03 pnp transistor 3906 3906 transistor pnp 3906 100KH DD2S024

2N3906 JEDEC

Abstract: 2N3906 hie 350 2N3904 NPN 40 100 300 10 iHHj .3 50 â Bl| 350 ?.5 200 350 2N3905 PNP 40 50 150 10 hhmi 50 250 , , 5mA 2N3905 2N 3904 40 1 100-300 10mA 1 0.3 50mA, 5tA 2N3906 2N3905 40 50-1 50 10mA 1 0.4 50mA , mmslSSISm. 3 0.5 2N3905 PNP 40 70 260 mÃÃÃÃÃ^è 1 ^ 3 0.5 2N3906 PNP 40 300 WsSÌÃmM 1 3 0.5 , 2N3905 2N3906 The General Electric 2N3905 and 2N3906 are silicon PNP planar epitaxial transistors , IV, Ic = 100mA) 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 401 SYMBOL
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OCR Scan
2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N3906 JEDEC 2N3905 Equivalent 2N3906/BD559

2N3906 hie

Abstract: 2n3906 ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , ) ® Dated : 06/12/2005 ST 2N3905 / 2N3906 Characteristics at Tamb = 25 OC Parameter Symbol Min , 20 V, -IC = 10 mA, f = 100 MHz ST 2N3905 fT 200 - MHz ST 2N3906 fT 250 - , , - IC = 100 mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector
Semtech Electronics
Original
transistor ST 2N3904 2N3906 TO-92

2N3905 MOTOROLA

Abstract: 2N3906 MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300 (IC = 50
Motorola
Original
2N3905 MOTOROLA 2N3906 MOTOROLA 2N3906 APPLICATION 1N916 2N3905/D 226AA

2N3906

Abstract: 2N3905 Equivalent MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon 2N3905 2N3906 , all-Signal Transistors, FETs and Diodes Device Data 2-9 2N3905 2N3906 ELEC TR IC A L CHARACTERISTICS , OC = 0.1 mAdc, V c e = 1-0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2 , ) fT 2N3905 2N3906 200 250 4.5 MHz C 0bo Cibo hje 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 h0e 2N3905 2N3906 NF 2N3905 2N3906 - PF - 10.0 pF kO 0.5 2.0 8.0 12 X 10~4
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OCR Scan
TR 3906 PNP SM 2904S

2n3906 equivalent transistor

Abstract: 2N3906 Resistance, Junction to Ambient R9JA 200 °c.w 2N3905 2N3906 CASE 29-04, STYLE 1 TO-92 (TO-226AA) GENERAL , ) !CEX â'" 50 nAdc ON CHARACTERISTICS! 1) DC Current Gain j (lc = 0 1 mAdc, Vce = 1 0 Vdc) I 2N3905 2N3906 hFE 30 60 _ I , He = 1 o mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 â'" »C = 10 mAdc, Vce = 1-OVdcl 2N3905 2N3906 50 100 150 300 HC = 50 mAdc. VCE = 1.0 Vdc) 2N3905 2N3906 30 60 â'" ('C = 100 mAdc, Vce = 10 Vdc' 2N3905 2N3906 15 30 â'" Collector-Emitter Saturation Voltage "c - 10 mAdc, Ib = 1 0
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OCR Scan
2N3906 DS PNP switching transistor 2N3906 PNP switching transistor 2N3906 mhz J-150

2N3906 JEDEC

Abstract: 2N3906 MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N3906* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 , 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 2N3905 2N3906 30 60 - - (IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 40 80 - - (IC = 10 mAdc, VCE = 1.0 Vdc) 2N3905 2N3906 50 100 150 300
Motorola
Original
2N3906 OR EQUIVALENT

2N3906

Abstract: 2N3906 die 2N3905, 2N3906 PNP Switching Transistors Si-Epitaxial PlanarTransistors PNP Version , Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) 2N3905 , Gehäuse auf Umgebungstemperatur gehalten werden 32 General Purpose Transistors 2N3905, 2N3906 , Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 0.1 mA 2N3905 2N3906 hFE hFE 30 60 ­ ­ ­ ­ - VCE = 1 V, - IC = 1 mA 2N3905 2N3906 hFE hFE 40 80 ­ ­ ­ ­ - VCE = 1 V, - IC = 10 mA
Diotec
Original
2N3906 die 2n3906 datasheet 2n3904 950 2N3906/C2N3906 c2n3905 10D3 UL94V-0 150/C

2N3906

Abstract: 2N39Q3 N AMER PHILIPS/DISCRETE 2SE D â  bfciS3T31 GD17Mtt. T â  I 2N3905 J2N3906 r- 3 7- SILICON , Respective Manufacturer N AMER PHILIPS/DISCRETE 2N3905 2N3906 2SE D bbS3131 00174b? 1 T-37-15 RATINGS , ~vBEsat < < 400 mV , 950' mV * D.C. current gain * -lC = 0,1 mA;VCE = 1 V 2N3905 2N3906 hFE > 30 60 , â  kbS3131 0Q174iaö 3 â  2N3905 2N3906 T-37-15 V h-parameters (common emitter) -lc = 1 mA;-VCE = 10V;f=1 kHz 2N3905 2N3906 Input impedance Reverse voltage transfer ratio Small-signal
-
OCR Scan
2N39Q3 IEC134 2N3906 transistor by philips 7Z14 2n3823 2N39 S3T31 GD17M S3131 0G174

2n3906

Abstract: 2N3905 ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , , Stock Code: 724) R Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol , )EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 - - MHz ST , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector
Semtech Electronics
Original
transistor ST 2N3906

2N3906

Abstract: transistor 2N3905 ST 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier , Code: 724) Dated : 07/12/2002 ST 2N3905 / 2N3906 Characteristics at Tamb=25 OC Symbol Min , )EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 - - MHz ST , - VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Voltage Collector
Semtech Electronics
Original
Abstract: 2N3905 / 2N3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , distance of 2 mm from case G S P FORM A IS AVAILABLE mW C C 2N3905 / 2N3906 Characteristics at , - - V -V(BR)EBO 5 - - V at -VCE=20V,-IC=10mA,f=100MHz ST 2N3905 fT 200 , - VCE=1V,- IC=50mA at- VCE=1V,- IC=100mA ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 ST 2N3905 ST 2N3906 Collector Saturation Voltage Base Saturation Bytes
Original

transistor 2N3905

Abstract: 2N3905 2N3905 General Purpose Transistor. Collector-emitter Voltage: Vceo = . http://store.americanmicrosemiconductor.com/2n3905.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3905 2N3905 G eneral Purpo se Trans is t o r. C o llec t o r-em it t er Vo lt , ://store.americanmicrosemiconductor.com/2n3905.html Low-Power High-Frequency Page. Order Help Desk U.S Orders Your , : Our Price: You Save: Americanmicrosemi 2N3905 $ 1.51 $ 1.21 $ 0.30 Total Price $ 1.21
American Microsemiconductor
Original

2N3904

Abstract: 2n3906 transfer ratio characteristics for 2N3905. iôôôe e 4 E 2 U Ib COLLECTOR-TO-EMITTER VOLTAGE (VCE , Transistors- _- 2N3903, 2N3904, 2N3905, 2N3906 r~ 3S"/; Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905, tions. PNP values are negative; observe proper polarity. 2N3906 PNP types , : 2N3903 2N3905 2N3S04 2N3906 collector to emitter voltage (vce0 , 17925 D -â'" Signal Transistors 2N3903, 2N3904, 2N3905, 2N3906 -T-yi-ts ELECTRICAL CHARACTERISTICS
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OCR Scan
for 2N3904 2n3906 rca 2N3906-O 2N3904 230 307SQ HCS427U 2C3-42772 V2CS-42774
Abstract: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 â'¢ Collector-Em itter Voltage: V Ceo =40V â'¢ C o llector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS , Base Cut-off Current *DC Current Gain :2N 3905 2N3906 2N3905 2N3906 2N 3905 2N3906 2N3905 2N3906 2N3905 2N3906 "Collector-Emitter Saturation Voltage B V cbo BV ceo BV bbo *Base-Emitter , ) Typ T43 â  V V V V PF MHz MHz ns ns ns 2N3905/3906 PNP EPITAXIAL SILICON -
OCR Scan
0D2S02M

transistor 2N3905

Abstract: 2N3905 2N3905 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise , 2N3905 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3905 Discrete POWER & Signal , Time I B1 = IB2 = 1.0 mA 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 2N3905
Fairchild Semiconductor
Original
Abstract: 2N3905 2N3905 C BE TO-92 PNP General Purpose Amplifier This device is designed for , Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 2001 Fairchild Semiconductor Corporation 2N3905, Rev A 2N3905 PNP General Purpose Amplifier (continued , % 2N3905 PNP General Purpose Amplifier (continued) Typical Characteristics V CESAT - COLLECTOR , AMBIE NT TEMP ERATURE (° C) 125 1 REVERSE BIAS VOLTAGE (V) 10 2N3905 PNP General Purpose Fairchild Semiconductor
Original

TR 3906 PNP SM

Abstract: N3906 NEC ELECTRON DEVICE PNP SILICON TRANSISTORS 2N3905,2N3906 GENERAL PURPOSE SW ITCHING AND AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR 2 DESCRIPTION The 2N 3905, 2N3906 are PNP transistors, designed for general purpose switching and amplifier application, feature injection-molded plastic package for high reliability. PA CKA G E DIMENSIONS in inches (millimeters) FEA TU R ES · High Pow er · , ) 2N3905 C H A R A C T E R IS T IC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
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OCR Scan
N3906 2N3906-G N3904
Abstract: MOTOROLA Order this document by 2N3905/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N3905 2N 3906* PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating , © M otorola, Inc. 1996 2N3905 2N3906 ELECTRICAL CHARACTERISTICS (T /\ = 2 5 °C un le ss o th e , Transistors, FETs and Diodes Device Data 2N3905 2N3906 'T o ta l s h u n t c a p a c ita n c e o f te s , 6. Fall Time Motorola Sm all-S ignal Transistors, FETs and Diodes Device Data 3 2N3905 -
OCR Scan

transistor pnp 3906

Abstract: transistor c 3906 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR · Collector-Emitter Voltage: Veto* 40V · Collector DiMipation: Pc (max)=625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta , 3906 2N3905 2N3906 2N 3905 2N 3906 2N 3905 2N 3906 2N 3905 2N 3906 'C olle ctor-Em itter Saturation Voltage 'B a se -E m itte r Saturation Voltage Output C apacitance Current Gain Bandw idth Product 2N3905 , 2N3905/3906 DC CURRENT OAIN PNP EPITAXIAL SILICON TRANSISTOR CURRENT OAIN-BANDWIDTH PRODUCT IC
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OCR Scan
transistor c 3906 pnp transistor 2n 3906 Transistor 2n 3906 18 3906 2n 3906 TRANSISTOR 3906 TRANSISTOR PNP
Showing first 20 results.