NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N3904S | Korea Electronics | Switching Transistor |
4 pages, |
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| 2N3904S | Korea Electronics | EPITAXIAL PLANAR NPN TRANSISTOR |
4 pages, |
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| 2N3904S | Korea Electronics | TRANS GP BJT NPN 40V 0.2A 3SOT-23 |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SEMICONDUCTOR 2N3904S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZC 1 2 Item Marking Description Device Mark ZC 2N3904S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B ... | Original |
1 pages, |
ZC marking SOT 23 ZC 2N3904S SOT-23 2N3904S 2N3904S abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : IcEx=50nA(Max.), IBL=50nA(Max. , * Pc : Package Mounted On 99.5% Alumina 10x8x0.6mm 1998. 6. 15 Revision No : 2 KEC 1/4 2N3904S , 2N3904S Ic ~ Vce h.FE ~ le 100 < S H £ H « Dh P o « 0 H 1 O Ü Eh £ W PH Ph 13 O PS o Eh , 1 3 10 30 100 300 COLLECTOR CURRENT IC (mA) 1998. 6. 15 Revision No : 2 KEC 3/4 2N3904S VCE - ... | OCR Scan |
4 pages, |
ph-13 transistor 2N3906S SOT-23 2N3906S 20MS 1N916 2N3904 2N3904S 2N3904S abstract |
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| Abstract: _ SEMICONDUCTOR KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : IcEx=50nA , Mounted On 99.5% Alumina 10x8x0.6mm 1998. 6. 15 Revision No : 2 KEC 1/4 2N3904S ELECTRICAL , //S, Duty Cycled 2% 1998. 6. 15 Revision No : 2 KEC 2/4 2N3904S le - VcE h fe - le Eh fc W « , KEC 3/4 2N3904S VcE - Iß 1 ! ~~ < < a H II -H ... | OCR Scan |
4 pages, |
2N3906S 2N3904S 1n9161 1N916 2N3904S abstract |
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| Abstract: SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES 2 A H @VCE=30V, VEB=3V. 3 G , SOT-23 Marking Type Name Lot No. ZC ) 1/4 2N3904S ELECTRICAL CHARACTERISTICS , 2%. 2003. 2. 25 Revision No : 3 2/4 2N3904S I C - V CE h FE - I C Ta=25 C , I C =10mA 50 I C =1mA COLLECTOR-EMITTER VOLTAGE VCE (V) 2N3904S Revision No : 3 10 ... | Original |
4 pages, |
2N3906S 1N916 2N3904S datasheet abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA 2N3906S 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : Icex=-50nA(Max.), IBL=-50nA(Max.) @VCe=-30V, Veb=-3V. * Excellent DC Current Gain Linearity. * Low Saturation Voltage : VcE(sat)=-0.4V(Max.) @Ic=-50mA, IB=-5mA. * Low Collector Output Capacitance : C0b=4.5pF(Max.) @Vcb=-5V. * Complementary to 2N3904S. LLÂ M dim millimeters a 2.93+0.20 b 1.30+0.20/-0.15 c 1.30 max d 0.45+0.15/-0.05 e ... | OCR Scan |
2 pages, |
2N3906S SOT-23 2N3906S 2N3904S 1N916 2N3906S abstract |
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| Abstract: M K : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904S. DIM A B C D E G H J K ... | Original |
2 pages, |
2N3906S 2N3904S SOT-23 1N916 2N3904S datasheet abstract |
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| Abstract: : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904S. DIM A B C D E G H J K L M N P 1. ... | Original |
2 pages, |
2N3906S 2N3904S SOT-23 2N3904S 1N916 datasheet abstract |
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| Abstract: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906S 2N3906S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES * Low Leakage Current : Icex=-50nA(Max.), IBL=-50nA(Max.) @VCe=-30V, Veb=-3V. * Excellent DC Current Gain Linearity. * Low Saturation Voltage : VcE(sat)=-0.4V(Max.) @Ic=-50mA, IB=-5mA. * Low Collector Output Capacitance : C0b=4.5pF(Max.) @VCb=-5V. * Complementary to 2N3904S. L B L 3 "TT -r -1 1- o _L 2 M 1 r~r -i I- 1_l_ j-: M A ... | OCR Scan |
2 pages, |
2N3904S 1N916 2N3906S 2N3906S abstract |
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| Abstract: quantifies the error induced from beta variation using the 2N3904's tested by SMSC. It should be clearly , 2N3904's tested was found to have a positive temperature coefficient and as a `rule-of-thumb', typically ... | Original |
9 pages, |
MMBT3904-7 MMBT3904LT1 SMBT3904E6327 UMT3904 2N3904, transistor bipolar transistor Transistor 2N3904 2N3904 transistor equivalent mmbt3904n623 2n3904 equivalent transistor for 2N3904 equivalent transistor 2n3904 of 2n3904 EMC1002 EMC1002 abstract |
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| Abstract: : Cob=4.5pF(Max.) @VCB=-5V. DIM A B C D E G H J K L M N P Complementary to 2N3904S. 1. ... | Original |
4 pages, |
za sot23 1N916 2N3904S 2N3906S datasheet abstract |
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| Abstract: 59 ^Ja&uX Electronic Valves Z& I Aero Services Ltd London England 1972 - 73 Transistors Continued Type Constr Outline P.O, Vcbo "f. aH Notes- Price £ 2N3904 2N3904 S/NPN X20B 310mW 300mc ... | OCR Scan |
1 pages, |
transistor t05 2S002 2S005 2S012A 2S013A 2S017 2S034 2S102 3906 npn T018 2N3904 2S701 2S702 2S746 2N3904 abstract |
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| Abstract: ELECTRONICS 2N39Q4 2N39Q4 S/S TR GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEOm40V Collector Dissipation: P>(;(max)a6i5mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic symbol Rating Unit Collector-Base Voltage Vcija 60 V Collector-Emitter Voltage VCEC 40 V Emitter-Base Voltage VEOp 6 V Collector Current k 200 mA Collector Dissipation Pç 525 mW Junction Temperature Tj 150 'C Storage Temperature T5Te â- 55 ~ 150 "C 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T ... | OCR Scan |
2 pages, |
pc 525 2N3903 h 2n3904 2N3304 2N3904 2N39D4 2N39Q4 2N39Q4 abstract |
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| Abstract: 2N3904 2N3904 ® SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type 2N3904 2N3904 s s s Marking 2N3904 2N3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 2N3906 APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit ... | Original |
4 pages, |
ST 2n3904 TRANSISTOR PNP 2N3906 2N3904 2n3904 specification 2N3904 abstract |
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| ® Processors or diode connected 2N3904s. The temperature of any ASIC can be detected using the LM82 as long as www.datasheetarchive.com/files/national/pf/lm82.html |
National | 17/02/2005 | 15.24 Kb | HTML | lm82.html |
| devices, such as Pentium II® Processors or diode connected 2N3904s. The temperature of any ASIC can be www.datasheetarchive.com/files/national/htm/nsc02412-v5.htm |
National | 01/11/2002 | 19.53 Kb | HTM | nsc02412-v5.htm |
| ® Processors or diode connected 2N3904s. The temperature of any ASIC can be detected using the LM83 as long as www.datasheetarchive.com/files/national/htm/nsc04381-v1.htm |
National | 28/06/2001 | 17.57 Kb | HTM | nsc04381-v1.htm |
| , such as Pentium II® Processors or diode connected 2N3904s. The temperature of any ASIC can be detected www.datasheetarchive.com/files/national/lm82.html |
National | 25/09/2003 | 12.88 Kb | HTML | lm82.html |
| ® Processors or diode connected 2N3904s. The temperature of any ASIC can be detected using the LM82 as long as www.datasheetarchive.com/files/national/htm/nsc02407-v5.htm |
National | 01/11/2002 | 20.17 Kb | HTM | nsc02407-v5.htm |
| 2N3904s. The temperature of any ASIC can be detected using the LM82 as long as a dedicated diode www.datasheetarchive.com/files/national/htm/nsc04377-v1.htm |
National | 28/06/2001 | 18.03 Kb | HTM | nsc04377-v1.htm |
| or diode connected 2N3904s. The temperature of any ASIC can be detected using the LM82 as long as a www.datasheetarchive.com/files/national/htm/nsc03183-v2.htm |
National | 14/09/2000 | 14.21 Kb | HTM | nsc03183-v2.htm |
| 2N3904s. The temperature of any ASIC can be detected using the LM82 as long as a dedicated diode www.datasheetarchive.com/files/national/htm/nsc03511-v1.htm |
National | 16/08/2002 | 18.5 Kb | HTM | nsc03511-v1.htm |
| devices, such as Pentium II® Processors or diode connected 2N3904s. The temperature of any ASIC can be www.datasheetarchive.com/files/national/htm/nsc03186-v2.htm |
National | 14/09/2000 | 16.82 Kb | HTM | nsc03186-v2.htm |
| II® Processors or diode connected 2N3904s. The temperature of any ASIC can be detected using the LM83 www.datasheetarchive.com/files/national/htm/nsc03516-v1.htm |
National | 16/08/2002 | 17.84 Kb | HTM | nsc03516-v1.htm |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| 2N3904S Buy | 2SC4667 Buy | Toshiba | BJT | Switching Transistor |
| 2N3904S Buy | MMBT3904 Buy | On Semiconductor | BJT | Switching Transistor |
| NTE Electronics Part | Industry Part |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SC3325 Buy | 2N3904S Buy | KEC | Transistor for Low-Frequency Small-Signal Amplification - S-Mini - SOT-346 | Transistors |