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1 - 50 of about 10000+ for 2N3904 |
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First line: 2N3903 2N3904 Version 2004-01-20 Switching Transistors Si-Epitaxial PlanarTransistors Power dissipation Verlustleistung Plastic Abstract: .. 2N3903, 2N3904 Switching Transistors. NPN Si-Epitaxial PlanarTransistors NPN. Version 2004-01-20. Power dissipation – Verlustleistung 625 mW. Plastic case TO-92. Kunststoffgehäuse 10D3 .. datasheet abstract.. |
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First line: Small Signal Transistor PROCESS CP392 Amp / Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMPT3904E CMST3904 CXT3904 CZT3904. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R0 06 -April 2004 Process EPITAXIAL PLANAR. Die .. datasheet abstract.. |
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First line: Transmitter Sensitive Transmitter Sensitive Parts List Component Value Datasheet Qty Resistor Abstract: .. Transistor 2N3904 Available 02. Microphone Electret Not Available 01. .. datasheet abstract.. |
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First line: Semiconductor 2N3904 Silicon Transistor Descriptions General small signal application Switching application Features Abstract: .. 2N3904 NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage • Collector output capacitance • Complementary .. datasheet abstract.. |
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First line: 2N3903 2N3904 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3903 / 2N3904. NPN Silicon Epitaxial Planar Transistor. for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special .. datasheet abstract.. |
166.91 Kb |
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First line: LM2940-5.0 24LC16B 4.7K 2N3904 RTCC PBASIC2 / P MCLR OSC1 OSC2 Resonator Vout MN13811 Abstract: .. 2N3904. Q2. 2N3904. 10K 10K. 2. 1. 3. U3. MN13811. R1. 4.7 K. R2. 4.7K. RA0. 6. RA1. 7. RA2. 8. RA3. 9. RB0. 10. RB1. 11. RB2. 12. RB3. 13 .. datasheet abstract.. |
12.71 Kb |
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First line: 2N3904 General Purpose Transistors TO-92 EMITTER BASE COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25 Abstract: .. 2N3904. WEITRON http://www.weitron.com.tw. IC= 10 mAdc, VCE=1.0 Vdc IC= 50 mAdc, VCE= 1.0 Vdc 100 400 1 2 60. 0.3. 0.95. - Classification of hFE 1 Rank O Y G. Range 100-200 200-300 300-400 .. datasheet abstract.. |
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First line: Abt. Allg. Elektrotechnik Mikroelektronik Lares Programmer PC Circuit Diagram 1N4004 Power CON2 Abstract: .. 2N3904 2N3906. E B C. BC516 BC517. C B E. D3 D4 0V +5V +13.5V 0 0 0 1 0. 1 0 0 0 1. 0 1 1 0 0. 1 1 1 0 0. LED Logic. C11 10μF .. 2N3904. R15 680Ω. R16 47K5Ω. D7 1N4148. adjust for. BUSY. 11. MCLR. C8. 100nF K. C10 100nF K. Source of basic .. datasheet abstract.. |
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First line: 2N3903 2N3904 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3903 / 2N3904. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On .. datasheet abstract.. |
297.49 Kb |
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First line: 2N3903 2N3904 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3903 / 2N3904. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On .. datasheet abstract.. |
244.42 Kb |
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First line: 2N3903 2N3904 Silicon Epitaxial Planar Transistor switching amplifier applications. complementary types transistors Abstract: .. ST 2N3903 / 2N3904. NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors ST 2N3905 and ST 2N3906 are recommended. On special .. datasheet abstract.. |
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First line: 2N3904 MMBT3904 SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features Epitaxial Planar Construction Available Abstract: .. 2N3904 / MMBT3904 NPN SMALL SIGNAL TRANSISTORS. Features. • Epitaxial Planar Die Construction • Available in both Through-Hole and Surface Mount Packages • Ideal for Switching and Amplifier Applications .. datasheet abstract.. |
35.69 Kb |
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First line: In-Field Programming Using In-System Programmimg Capability NOTES +5V shown required 74HCT244 74HCT125 Abstract: .. 2N3904. U2A 74HCT125. 2 3. 1. R15 39K. P1. DB25 MALE to computer parallel port. 13 25 12 24 11 23 10 22. 9. 21 8 20 .. Q3 2N3904. Q2 2N3906. R3. 100. J1. 4-pin programming header optional. 1 2 3 4. U3A 74HCT74. D. 2. CLK. 3. Q. 5. Q. 6. PR .. datasheet abstract.. |
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First line: Application Note Layout Power Control ARA05050 RELEVANT PRODUCTS ARA05050 impedance practical. Pins Abstract: .. Q1: 2N3906 Q2: 2N3904. @ #$%% * #$%% 3%0405. 4.*%00*46. $=$. #:E*"F& 7 $/"C0@@C’ 7 $/"C0@@C’$2 .. datasheet abstract.. |
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First line: PROCESS CP192V Small Signal Transistors Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMST3904 CXT3904 CZT3904. Process EPITAXIAL PLANAR. Die Size 13 x 17 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.0 X 3.0 MILS. Emitter .. datasheet abstract.. |
227.51 Kb |
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First line: 2N3904 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Ordering Code 2N3904 2N3904-AP Marking 2N3904 Abstract: .. 2N3904. SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE PNP COMPLEMENTARY TYPE IS. 2N3906. APPLICATIONS .. datasheet abstract.. |
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First line: PROCESS CP392V Smal Signal Transistor Amp / Switch Transistor Chip Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMPT3904E CMST3904 CXT3904 CZT3904. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R1 28 -March 2005 Process EPITAXIAL PLANAR. Die .. datasheet abstract.. |
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First line: PROCESS CP192V Small Signal Transistors Switch Transistor Chip PROCESS DETAILS Process Size Abstract: .. PRINCIPAL DEVICE TYPES 2N3904 CMKT3904 CMLT3904E CMPT3904 CMST3904 CXT3904 CZT3904. Process EPITAXIAL PLANAR. Die Size 13 x 17 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.0 X 3.0 MILS. Emitter .. datasheet abstract.. |
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First line: PROCESS Small Signal Transistor Amp / Switch Transistor Chip CP192 Central Semiconductor Corp. PROCESS Abstract: .. PRINCIPAL DEVICE TYPES 2N3904 CMPT3904 CMST3904 CXT3904 CZT3904. Process EPITAXIAL PLANAR. Die Size 13 x 17 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 3.0 X 3.0 MILS. Emitter Bonding Pad Area .. datasheet abstract.. |
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First line: 5.6V 1 / 2W S4010L S4010L 5.6V 1 / 2W 2N6507 Filter 500K WATT SERIES FILTER Abstract: .. Q4 2N3904. D8. D2. R19 47K. D7. C2 .01. R10. 680K. R12. 4.3K. R22 100. R20 100. D9. R21 2.2K. R6. 5.6M * R18. 10K. R11 33K .. 2N3904. 2. 3. 4. 5. 6. 7. 1. Local OPERATE. D16. 56K R7. 120K R8. .04 C3. +12V. A. B. RTC CTC. RS AR MR. MODE Q/QSEL. Q 12 13. 1 2. 3 .. datasheet abstract.. |
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First line: Notification Date June Process Change Notice Parts Affected Chip processes CP192V NPN Abstract: .. 2N3904 CMPT3904 CMST3904 CMUT3904 CMXT3904 CMXT3946. CXT3904 CZT3904 MMPQ3904 MMPQ6700. MPQ3904 MPQ6700. CP192V-2N3904-WN CP192-CMPT3904-CT CP192-CMPT3904-WN. 2N3906 CMPT3906 CMPT3906E .. datasheet abstract.. |
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First line: Sound Activated Relay Page Parts List C1C2Cbias 100K C4Cx 100K D1D2 0.1uF Abstract: .. Parts List: Rx = 10K C1,C2,Cbias = 0.1uF, ceramic Q1 = 2N2222,2N3904, etc. R1 = 1K C3 = 1uF, electrolytic IC1 = 741 op-amp. R2 = 100K C4,Cx = 10uF, electrolytic MIC = Electret Mike, 2-wire. R3 = 100K Ry .. datasheet abstract.. |
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First line: 2N3903 2N3904 2N3903 Preferred Device General Purpose Transistors Silicon COLLECTOR Symbol Abstract: .. 2N3903, 2N3904 2N3903 is a Preferred Device. General Purpose Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol Value Unit. Collector‐Emitter Voltage VCEO 40 Vdc. Collector‐Base Voltage .. datasheet abstract.. |
98.77 Kb |
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First line: 2N3903 2N3904 2N3903 Preferred Device General Purpose Transistors Silicon Features COLLECTOR Abstract: .. 2N3903, 2N3904 2N3903 is a Preferred Device. General Purpose Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector -Emitter .. datasheet abstract.. |
102.51 Kb |
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First line: UNISONIC TECHNOLOGIES 2N3904 GENERAL PURPOSE AMPLIFIER FEATURES Collector-Emitter Voltage VCEO=40V Collector Dissipation Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N3904 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 3. Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-027,C. NPN GENERAL PURPOSE AMPLIFIER. Ñ FEATURES .. datasheet abstract.. |
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First line: 2N3903 2N3904 2N3903 Preferred Device General Purpose Transistors Silicon Features Pb-Free Abstract: .. 2N3903, 2N3904 2N3903 is a Preferred Device. General Purpose Transistors NPN Silicon. Features ∞ Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish. MAXIMUM RATINGS. Rating .. datasheet abstract.. |
101.03 Kb |
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First line: 2N3904 Vishay Semiconductors Small Signal Transistor NPN Features Silicon Epitaxial Planar Transistor Abstract: .. 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack. Parameter Test condition Symbol Value Unit. Collector - emitter voltage VCEO 40 V. Collector - base voltage VCBO 60 V. Emitter - base voltage VEBO .. datasheet abstract.. |
100.08 Kb |
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First line: 2N3904 Elektronische Bauelemente RoHS Compliant Product suffix specifies halogen lead-free Silicon General Abstract: .. Elektronische Bauelemente. 2N3904 NPN Silicon General Purpose Transistor. TO-92. î FEATURES . Power Dissipation PCM: 625 mW Ta=25 : . Collector Current ICM: 200 mA. . Collector - Base Voltage .. datasheet abstract.. |
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First line: 2N3904 SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Construction Available both Through-Hole Surface Abstract: .. 2N3904. NPN SMALL SIGNAL TRANSISTOR. Features Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary .. datasheet abstract.. |
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First line: 2N3904 EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES Collector-Emitter Voltage VCEO=40V Collector Abstract: .. UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-027,A. GENERAL PURPOSE APPLIATION. FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation .. datasheet abstract.. |
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First line: modem INPUT 200k 8.2nF CMPSH-3 220uF ILIM 0.1uF 9956A Lpri 27.2uH VP3-0084 Abstract: .. 2N3904. R1 1 200k Ohm 5% resistor 0805 R2,R3 2 22 Ohm 5% resistor 0805 R4,R9,R10 3 46.4k Ohm 1% resistor 0805 R5,R8 2 10.0k Ohm 1% resistor 0805 R6,R11 3 220 Ohm 5% resistor 0805 R7 1 30.1k .. datasheet abstract.. |
14.35 Kb |
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First line: CORPORATION Improved Cost Triple Driver CVA2411TX FEATURES DESCRIPTION CVA2411TX improved cost version Abstract: .. Q2 2N3904. R10 1.5K. Ω. 47 Ω. 330nH. 820. Ω. C5 .1. μ F. R-OUTPUT. 5.6K. Ω. C4. 2.2 μ. F. D1. FDH400. D2 FDH400. R7. R11. L1. R12 .. Q1 2N3904. R1 100. Ω. C2 120pF. R13. 120. Ω. C1 120pF. R3 56. Ω 33 Ω. R2. R-INPUT. Q1 2N3904. R1 100. Ω. C2 120pF. R13. 120 .. datasheet abstract.. |
49.72 Kb |
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First line: Cost 100MHz Triple Driver CORPORATION CVA2412AX FEATURES DESCRIPTION CVA2412AX very cost solution Abstract: .. Q2 2N3904. R10 1.5K. Ω. 47 Ω. 330nH. 820. Ω. C5 .1. μ F. R-OUTPUT. 5.6K. Ω. C4. 2.2 μ. F. D1. FDH400. D2 FDH400. R7. R11. L1. R12 .. Q1 2N3904. R1 65. Ω. C2 120pF. R13. 120. Ω. C1 120pF. R3 56. Ω 33 Ω. R2. G-INPUT. Q1 2N3904. R1 65. Ω. C2 120pF. R13. 120. Ω. C1 .. datasheet abstract.. |
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First line: 2N3904 SMALL SIGNAL TRANSISTOR PRELIMINARY DATA Type 2N3904 Marking 2N3904 SILICON EPITAXIAL Abstract: .. 2N3904. SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA. ■ SILICON EPITAXIAL PLANAR NPN. TRANSISTOR ■ TO-92 PACKAGE SUITABLE FOR. THROUGH-HOLE PCB ASSEMBLY ■ THE PNP COMPLEMENTARY TYPE IS. 2N3906. APPLICATIONS .. datasheet abstract.. |
37.35 Kb |
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First line: Philips Semiconductors Small-signal Transistors Diodes PHILIPS TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER Abstract: .. 2N3904 2N3904 2N3904 2N3904 2N3905 2N3906 2N3906 2N3906 2N3906 2N3906 2N4123 2N3904 .. MPS4124 2N3904 MPS4126 2N3904 MPS6531 PH2222A MPS6534 BC327-16 MPS6601 BC368 MPS6602 .. datasheet abstract.. |
239.78 Kb |
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First line: Global Mixed-mode Technology Inc. AN-003 Application Note Speed Controlling Driving with G760A Abstract: .. Q2 2N3904. C1. 1uF. R5 10K. VCC. FANVCC. R6 820. R3 680. OUT. 1. FG. 2. ON/OFF. 3. GND. 4. CLK. 5. SCL. 6. SDA. 7. VCC. 8. U1. G760A .. Q2 2N3904. C1. 1uF. FANVCC .. datasheet abstract.. |
187.17 Kb |
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First line: Remote Thermal Sensing Diode Selection Guide Preface This application note provides guidance Abstract: .. This application note does include a table of qualified discrete 2N3904 NPN transistors, but it is not the definitive or complete set of acceptable BJT’s to be used in temperature sensing applications .. datasheet abstract.. |
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First line: Cost Triple Driver CORPORATION CVA2422TL FEATURES DESCRIPTION CVA2422TL contains three cascode video Abstract: .. Q1 = 2N3904 D1, D2 = FHD400. R1 = 62 R2 = 120 R3 = 180 R4 = 47. C4 = 100 μF C5 = 2.2 μF C6 = 8pF INCLUDING PARASITIC R3. R2. R4. R1. C6. C4 C3. C2 C1. D2. D1. VIDEO INPUT. CVA2422TL. V 11 CC. 1,6,8. 2,7,9. 3,4,10. VOUT. C5. DC ELECTRICAL .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES 2N3904 GENERAL PURPOSE AMPLIFIER FEATURES Collector-Emitter Voltage VCEO=40V Collector Dissipation Abstract: .. UNISONIC TECHNOLOGIES CO., LTD. 2N3904 NPN SILICON TRANSISTOR. www.unisonic.com.tw 1 of 3. Copyright © 2005 Unisonic Technologies Co., Ltd QW-R201-027,B. NPN GENERAL PURPOSE AMPLIFIER. FEATURES .. datasheet abstract.. |
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First line: ERRATA TC237 680- 500-PIXEL IMAGE SENSOR DATA SHEET SOCS044 JUNE REVISED NOVEMBER Abstract: .. 2N3904. 10 k. 22 pF. 10 k. 22 pF. User-Defined Timer TC237. All values are in Ω and μF unless otherwise .. datasheet abstract.. |
40.11 Kb |
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First line: ERRATA TC237 680- 500-PIXEL IMAGE SENSOR DATA SHEET SOCS044 JUNE REVISED NOVEMBER Abstract: .. 2N3904. 10 k. 22 pF. 10 k. 22 pF. User-Defined Timer TC237. All values are in Ω and μF unless otherwise .. datasheet abstract.. |
58.34 Kb |
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First line: 2N3903 2N3904 2N3903 Preferred Device General Purpose Transistors Silicon Features COLLECTOR Abstract: .. 2N3903, 2N3904 2N3903 is a Preferred Device. General Purpose Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter .. datasheet abstract.. |
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First line: Current Sense Solutions InfoCard Linear Technology Offers Complete Range High Side Side Abstract: .. 2N3904. S1. S1 = OPEN, GAIN = 1 S1 = CLOSED, GAIN = 10 RA = RB VS = 5V, 0V. 10k 90.9k. VOUT. LOGIC. LOGIC HIGH .. 2N3904. RS 0.2Ω. CHARGER VOLTAGE A. 1/4 LT1491A. B. 1/4 LT1491A. RA' 2k. RB 2k. VBATT = 12V. IBATT. + RB' 2k .. datasheet abstract.. |
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First line: PRODUCT PRODUCT PRODUCT 2N3904 SMALL SIGNAL TRANSISTORS NPN TO-92 min. FEATURES Silicon Abstract: .. 2N3904. SMALL SIGNAL TRANSISTORS NPN FEATURES. ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N3906 is recommended .. datasheet abstract.. |
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First line: 2N3904 MMBT3904 MMPQ3904 PZT3904 2N3904 Discrete Power Signal Technologies MMBT3904 TO-92 SOT-23 Abstract: .. Discrete Power & Signal Technologies. N. 2N3904 / MMBT3904 / MMPQ3904 / PZT3904. 2N3904 MMBT3904. MMPQ3904 PZT3904. NPN General Purpose Amplifier This device is designed as a general purpose amplifier .. datasheet abstract.. |
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First line: 2N3904 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURE Power dissipation Tamb=25 Collector current Collector-base Abstract: .. TO-92 Plastic-Encapsulate Transistors Transistor NPN 2N3904. FEATURE. Power dissipation P :0.625 W Tamb=25 C Collector current I :0.2 A. Collector-base voltage V :60 V. Operating and storage .. datasheet abstract.. |
155.6 Kb |
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First line: UMT3904 SST3904 MMST3904 2N3904 Transistors General Purpose Transistor UMT3904 SST3904 MMST3904 2N3904 Abstract: .. UMT3904 / SST3904 / MMST3904 / 2N3904. Transistors. NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904. ! ! ! !Features 1 BVCEO > 40V IC = 1mA 2 Complements the UMT3906 / SST3906 .. datasheet abstract.. |
88.58 Kb |
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First line: 2N3904 MMBT3904 PZT3904 2N3904 MMBT3904 TO-92 SOT-23 Mark PZT3904 SOT-223 General Purpose Abstract: .. 2N3904 / MMBT3904 / PZT3904. 2N3904 MMBT3904. PZT3904. NPN General Purpose Amplifier. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA .. datasheet abstract.. |
62.54 Kb |
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First line: UMT3904 SST3904 MMST3904 2N3904 Transistors General Purpose Transistor UMT3904 SST3904 MMST3904 2N3904 Abstract: .. UMT3904 / SST3904 / MMST3904 / 2N3904 Transistors. Rev.A 1/4. NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904. z Features 1 BVCEO > 40V IC = 1mA 2 Complements the UMT3906 / SST3906 .. datasheet abstract.. |
155.63 Kb |
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First line: 2N3904 2N3904 MMBT3904 MMPQ3904 PZT3904 Discrete POWER Signal Technologies MMBT3904 TO-92 SOT-23 Abstract: .. 2N3904 / MMBT3904 / MMPQ3904 / PZT3904. Discrete POWER & Signal. Technologies. N. 2N3904 MMBT3904. MMPQ3904 PZT3904. NPN General Purpose Amplifier This device is designed as a general purpose amplifier .. datasheet abstract.. |
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