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2N3904/06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: or can be a discrete device (2N3904/06), accurate to 1ï'°C. A novel measurement technique cancels , Unit â'0.3, +5.5 V â'0.3 to VDD + 0.3 V Dâ' to GND â'0.3 to +0.6 V SCLK , 0.6 V 6.0 â' â' mA ALERT Output Low Sink Current ALERT Forced to 0.4 V 1.0 â , % Points 0.6 â' â' ms 600 â' â' ns Start Condition Setup Time, tSU:STA , Limit 0101 0101 (55h) (85ï'°C) 06 0C Local Temperature Low Limit 0000 0000 (00h) (0ï ON Semiconductor
Original
ADM1032 2N3904/06 846AB ADM1032/D

1032AR

Abstract: SOT-23 marking t1c or can be a discrete device (2N3904/06), accurate to 1°C. A novel measurement technique cancels out , Voltage (VDD) to GND Unit -0.3, +5.5 V -0.3 to VDD + 0.3 V D- to GND -0.3 to +0.6 , ) SDATA Output Low Sink Current SDATA forced to 0.6 V 6.0 mA ALERT Output Low Sink Current , , tHIGH tHIGH between 90% points 0.6 ms 600 ns Start Condition Setup Time, tSU:STA , Temperature High Limit 0101 0101 (55h) (85°C) 06 0C Local Temperature Low Limit 0000 0000 (00h
ON Semiconductor
Original
1032AR SOT-23 marking t1c ADM1032ARZ transistor T1J 1032AR01 2N3906 ADM1032-1 ADM1032-2

1032AR

Abstract: SOT23 NPN marking 4d can be a discrete device (2N3904/06), accurate to 1°C. A novel measurement technique cancels out the , 0.3 -0.3 to +0.6 -0.3 to +5.5 -0.3 to VDD + 0.3 -1, +50 ±1 >1000 150 -65 to +150 220 260 300 Unit V V , SDATA to 10% of SCLK tLOW between 10% points tHIGH between 90% points 1.3 0.6 600 600 600 100 300 1.3 300 300 25 SDATA forced to 0.6 V ALERT forced to 0.4 V 6.0 1.0 -1.0 5.0 400 64 +1.0 mA mA mA pF kHz ms , Registers Read Address (Hex) Not Applicable 00 01 02 03 04 05 06 07 08 Not Applicable 10 11 12 13 14 19
ON Semiconductor
Original
SOT23 NPN marking 4d T1C MSOP-8 0250C

1032ar

Abstract: T1J marking diode can be a discrete device (2N3904/06), accurate to 1C. A novel measurement technique cancels out the , Temperature for Pb-Free Lead Temperature (Soldering 10 sec) Rating -0.3, +5.5 -0.3 to VDD + 0.3 -0.3 to +0.6 , to 0.6 V ALERT Forced to 0.4 V VDD = 3.0 V to 5.5 V VDD = 3.0 V to 5.5 V 2.1 - - 6.0 1.0 -1.0 - - - , tLOW between 10% Points tHIGH between 90% Points - - 1.3 0.6 600 600 600 100 300 1.3 - - - 25 - - - - - , ADM1032 REGISTERS Read Address (Hex) Not Applicable 00 01 02 03 04 05 06 07 08 Not Applicable 10 11 12 13
ON Semiconductor
Original
T1J marking diode 1023A 1023AR

ADM1032 D

Abstract: can be a discrete device (2N3904/06), accurate to 1°C. A novel measurement technique cancels out the , (Soldering 10 sec) Rating -0.3, +5.5 -0.3 to VDD + 0.3 -0.3 to +0.6 -0.3 to +5.5 -0.3 to VDD + 0.3 -1, +50 ±1 , Current, IIH, IIL Input Capacitance, SCLK, SDATA SDATA Forced to 0.6 V ALERT Forced to 0.4 V VDD = 3.0 V , - - 1.3 0.6 600 600 600 100 300 1.3 - - - 25 - - - - - - - - - - 400 64 - - - - - - - - 300 300 kHz , ADM1032 REGISTERS Read Address (Hex) Not Applicable 00 01 02 03 04 05 06 07 08 Not Applicable 10 11 12 13
ON Semiconductor
Original
ADM1032 D

ADM1032ARMZ T1J

Abstract: ADM1032ARMZ-1 thermal diode, which can be located on the processor die or can be a discrete device (2N3904/06 , ns ns s ns ns SDATA forced to 0.6 V ALERT forced to 0.4 V ±1 ±3 Resolution Remote , 0.6 600 600 600 100 300 1.3 300 300 1 0 TA 100°C, VCC = 3 V to 3.6 V 60°C TD 100 , (Soldering 10 sec) tLOW Rating -0.3 V, +5.5 V -0.3 V to VDD + 0.3 V -0.3 V to +0.6 V -0.3 V to +5.5 , (Hex) Not Applicable 00 01 02 03 04 05 06 07 08 Not Applicable 10 11 12 13 14 19
Analog Devices
Original
ADM1032ARMZ T1J ADM1032ARMZ-1 ADM1032ARMZ-2REEL MO-187-AA MS-012-AA ADM1032ARMZ-REEL7 C01906-0-11/05

transistor T1J

Abstract: 2N3904 or can be a discrete device (2N3904/06), accurate to 1°C. A novel measurement technique cancels out , mV VDD = 3 V to 5.5 V mA mA SDATA forced to 0.6 V ALERT forced to 0.4 V ±1 ±3 , 0.6 600 600 600 100 300 1.3 300 300 A pF kHz ms s s ns ns ns ns ns s ns ns , GND SCLK, SDATA, ALERT Rating -0.3 V, +5.5 V -0.3 V to VDD + 0.3 V -0.3 V to +0.6 V -0.3 V to , 05 06 07 08 Not Applicable 10 11 12 13 14 19 Write Address (Hex) Not Applicable Not
ON Semiconductor
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ADM10321

2N3904

Abstract: transistor ST 2N3904 : 06/12/2005 ST 2N3903 / 2N3904 Characteristics at Tamb=25 OC Parameter Symbol Min. Max , ) R Dated : 06/12/2005 ST 2N3903 / 2N3904 h Parameters (VCE=10V, Ta=25 °C, f=1kHz) Output , ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier , MHz ST 2N3903 fT 250 - MHz ST 2N3904 fT 300 - MHz CCBO - 4 pF , 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA ST 2N3903 ST 2N3904 ST 2N3903 ST
Semtech Electronics
Original
2N3905 transistor ST 2N3904 ST 2n3904 TRANSISTOR PNP ST 2n3904 h 2n3904 2N3904 plastic 2N3903 transistor

2N3904

Abstract: transistor ST 2N3904 , Stock Code: 724) R Dated : 16/06/2004 ST 2N3903 / 2N3904 Characteristics at Tamb=25 oC Symbol , Stock Exchange, Stock Code: 724) R Dated : 16/06/2004 ST 2N3903 / 2N3904 DC Current Gain 2 , ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier , - - V at VCE=20V,IC=10mA,f=100MHz ST 2N3903 fT 250 - - MHz ST 2N3904 , 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904
Semtech Electronics
Original
transistor 2n3903 2N3904 equivalent 2N3904 transistor data sheet free download 2N3906 hie 2N3904H

transistor ST 2N3904

Abstract: ST 2n3904 TRANSISTOR PNP : 06/12/2005 ST 2N3903 / 2N3904 Characteristics at Tamb=25 OC Parameter Symbol Min. Max , ) ® Dated : 06/12/2005 ST 2N3903 / 2N3904 h Parameters (VCE=10V, Ta=25 °C, f=1kHz) Output Amittance , : 06/12/2005 ST 2N3903 / 2N3904 DC Current Gain 2 VCE=1V TJ=125°C 25°C hFE (Normalized , ST 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier , MHz ST 2N3903 fT 250 - MHz ST 2N3904 fT 300 - MHz CCBO - 4 pF
Semtech Electronics
Original
2n3904 TRANSISTOR PNP ST 12 55C transistor 2n3904 pin configuration NPN transistor 2N3904 ST2N3904

2N3904

Abstract: 2N3904 SOT-23 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features â'¢ This device is designed , and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E TO-92 SOT , . Parameter 2N3904 625 5.0 Total Device Dissipation Derate above 25°C RθJC Thermal Resistance , the collector lead min. 6 cm2. © 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 www.fairchildsemi.com 1 2N3904 / MMBT3904 / PZT3904 â'" NPN General Purpose
Fairchild Semiconductor
Original
2N3904 SOT-23 2n3904 npn

2N3903

Abstract: 2N3904 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http , Device 2N3903 2N3903RLRM 2N3904 2N3904RLRA 2N3904RLRE 2N3904RLRM 2N3904RLRP 2N3904RL1 2N3904ZL1 Package , : 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , , IB = 5.0 mAdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) ­ ­ , = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF ­ ­ 6.0 5.0 50 100
ON Semiconductor
Original
2N3904 hfe 2000/A 2000/T

2n3904

Abstract: 2N3904G 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features , June, 2004 - Rev. 5 59 Publication Order Number: 2N3903/D 2N3903, 2N3904 ELECTRICAL , ) 2N3903 2N3904 td tr ts tf - - - - - 35 35 175 200 50 ns ns ns ns 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 fT MHz 250 300 - - 1.0 1.0 0.1 0.5 50 100 1.0 - - - - 4.0 8.0 8.0 10 5.0 8.0 - 200 400 40 6.0 5.0 mmhos dB pF pF kW 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904
ON Semiconductor
Original
2N3904G

NPN transistor 2n 3904

Abstract: tr 2n3904 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features , EMITTER STYLE 1 2N3904 TO-92 5000 Units/Box TO-92 2000/Tape & Reel TO-92 2000/Tape & , Publication Order Number: 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , ) (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0
ON Semiconductor
Original
NPN transistor 2n 3904 tr 2n3904 2N3904 pin diagram data sheet transistor 2n3904 tr 3904 2n 3904 ic

2N3904

Abstract: 2N3904RLRA 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features , : 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc , ) fT 2N3903 2N3904 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo -
ON Semiconductor
Original

ST 2n3904

Abstract: transistor ST 2N3904 2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications , distance of 2 mm from case G S P FORM A IS AVAILABLE mW C C 2N3903 / 2N3904 Characteristics at , ST 2N3904 fT 300 - - MHz CCBO - - 4 pF CEBO - - 8 DC , =1V, IC=100mA ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 ST 2N3903 ST 2N3904 Collector Saturation Voltage Base Saturation Voltage Collector Cutoff
Bytes
Original

2N3904

Abstract: equivalent al 2n3904 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon http , ­92 5000 Units/Box 2N3903RLRM TO­92 2000/Ammo Pack 2N3904 TO­92 5000 Units/Box , Publication Order Number: 2N3903/D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0
ON Semiconductor
Original
equivalent al 2n3904 2n3904 application 2N 3904 transistor

2N3904

Abstract: 2N3904RLRA 2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features , /D 2N3903, 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , , VCE = 1.0 Vdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 , 2N3904 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo - 4.0 pF , 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) kW hie 2N3903 2N3904 Voltage Feedback Ratio (IC = 1.0
ON Semiconductor
Original
2n3904 transistors

2N3904h

Abstract: 2N3904 2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com · , , 2010 January, 2010 - Rev. 7 1 Publication Order Number: 2N3903/D 2N3903, 2N3904 , CHARACTERISTICS DC Current Gain (Note 2) (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = , mAdc, VCE = 20 Vdc, f = 100 MHz) 2N3903 2N3904 fT MHz Output Capacitance (VCB = 5.0 Vdc
ON Semiconductor
Original
2n390

SOT-23 EBC

Abstract: 2N3904 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features · This device is designed as , and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E TO-92 SOT , . Parameter 2N3904 625 5.0 Total Device Dissipation Derate above 25°C RJC Thermal Resistance , collector lead min. 6 cm2. © 2011 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. B0 www.fairchildsemi.com 1 2N3904 / MMBT3904 / PZT3904 - NPN General Purpose Amplifier
Fairchild Semiconductor
Original
SOT-23 EBC MMBT3904 SOT-523F 2n3904 TO-92 MMBT3904 1A 2n3904 npn fairchild 2N3904 ammo package
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