2N3903 2N3904 2N3904ZL1 2N3904RL1 2N3904RLRP 2N3904RLRMG 2N3904RLRM 2N3904RLRE

2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com · Pb-Free Package May be

2N3903 2N3903, 2N3904 2N3904 2N3903 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com · Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 40 VCBO 60 Vdc Emitter -Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C 1 2 Vdc Collector -Base Voltage TO-92 CASE 29 STYLE 1 PD Operating and Storage Junction Temperature Range 625 5.0 TJ, Tstg 2N 3903 YWW W mW/°C -55 to +150 MARKING DIAGRAMS mW mW/°C 1.5 12 3 °C Y WW 2N 3904 YWW = Year = Work Week ORDERING INFORMATION THERMAL CHARACTERISTICS (Note 1) RJC 83.3 °C/W 1. Indicates Data in addition to JEDEC Requirements. COLLECTOR 3 2 BASE 1 EMITTER STYLE 1 2N3904 2N3904 TO-92 5000 Units/Box TO-92 2000/Tape & Reel TO-92 2000/Tape & Reel TO-92 2000/Ammo Pack TO-92 2000/Ammo Pack TO-92 2000/Ammo Pack TO-92 2000/Tape & Reel 2N3904ZL1 2N3904ZL1 Thermal Resistance, Junction-to-Case 2000/Ammo Pack 2N3904RL1 2N3904RL1 °C/W TO-92 2N3904RLRP 2N3904RLRP 200 5000 Units/Box 2N3904RLRMG 2N3904RLRMG RJA TO-92 2N3904RLRM 2N3904RLRM Thermal Resistance, Junction-to-Ambient 2N3903 2N3903 2N3904RLRE 2N3904RLRE Unit Shipping 2N3904RLRA 2N3904RLRA Max Package 2N3903RLRM 2N3903RLRM Symbol Characteristic TO-92 2000/Ammo Pack Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 December, 2003 - Rev. 4 1 Publication Order Number: 2N3903/D 2N3903/D 2N3903 2N3903, 2N3904 2N3904 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 - Vdc Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 - Vdc Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 - Vdc IBL - 50 nAdc ICEX - 50 nAdc 20 40 35 70 50 100 30 60 15 30 - - - - 150 300 - - - - - - 0.2 0.3 0.65 - 0.85 0.95 250 300 - - OFF CHARACTERISTICS Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS hFE DC Current Gain (Note 2) (IC = 0.1 mAdc, VCE = 1.0 Vdc) 2N3903 2N3903 2N3904 2N3904 2N3903 2N3903 2N3904 2N3904 2N3903 2N3903 2N3904 2N3904 2N3903 2N3903 2N3904 2N3904 2N3903 2N3903 2N3904 2N3904 (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector -Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) Base -Emitter Saturation Voltage (Note 2) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) - Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 2N3903 2N3903 2N3904 2N3904 MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo - 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo - 8.0 pF 1.0 1.0 8.0 10 0.1 0.5 5.0 8.0 50 100 200 400 1.0 40 - - 6.0 5.0 td - 35 ns tr - 35 ns ts - - 175 200 ns tf - 50 ns Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) k hie 2N3903 2N3903 2N3904 2N3904 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) X 10- 4 hre 2N3903 2N3903 2N3904 2N3904 Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 2N3903 2N3903 2N3904 2N3904 Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) - NF 2N3903 2N3903 2N3904 2N3904 mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3903 2N3904 2N3904 Fall Time 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%. http://onsemi.com 2 2N3903 2N3903, 2N3904 2N3904 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% 10 k +3 V +10.9 V 275 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 CS < 4 pF* 2N3903 2N3903, 2N3904 2N3904 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 1000 700 500 Cobo 2.0 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Charge Data 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 40 V 15 V 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 300 200 7 5 7 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. Rise Time 500 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 100 70 IC/IB = 20 50 IC/IB = 10 30 20 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) t s, STORAGE TIME (ns) IC/IB = 20 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time 300 200 200 IC, COLLECTOR CURRENT (mA) IC/IB = 20 100 70 50 IC/IB = 10 30 20 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 200 2N3903 2N3903, 2N3904 2N3904 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 SOURCE RESISTANCE = 500 W IC = 100 mA 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) Figure 9. 40 100 5.0 10 5.0 10 RS, SOURCE RESISTANCE (k OHMS) Figure 10. h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain Figure 12. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 10 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 2N3903 2N3903, 2N3904 2N3904 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55 °C TO +25°C -0.5 -55 °C TO +25°C -1.0 +25°C TO +125°C 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 qVB FOR VBE(sat) -1.5 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 2N3903 2N3903, 2N3904 2N3904 PACKAGE DIMENSIONS TO-92 TO-226AA CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 - 0.250 - 0.080 0.105 - 0.100 0.115 - 0.135 - STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 - 6.35 - 2.04 2.66 - 2.54 2.93 - 3.43 - STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE 2N3903 2N3903, 2N3904 2N3904 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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