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2N3866 Central Semiconductor Corp RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, High Frequency Band, Silicon, NPN, TO-39, HERMETIC SEALED PACKAGE-3 visit Digikey Buy
2N3866 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, NPN, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N3866 LEAD FREE Central Semiconductor Corp TRANS RF NPN 30V 400MA TO-39 visit Digikey Buy

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2N3866 Datasheet

Part Manufacturer Description PDF Type
2N3866 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
2N3866 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original
2N3866 Central Semiconductor RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 30V 400MA TO-39 Original
2N3866 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original
2N3866 Microsemi RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 1V 400MA TO39 Original
2N3866 Philips Semiconductors Silicon planar epitaxial overlay transistors Original
2N3866 Philips Semiconductors Silicon Epitaxial Planar Overlay Transistors Original
2N3866 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original
2N3866 Semico Chip Type 2C3866A Geometry 1007 Polarity NPN Original
2N3866 Advanced Semiconductor Silicon Transistors Scan
2N3866 Advani-Oerlikon Television / Video Devices Scan
2N3866 Bharat Electronics UHF / VHF RF Transistors Scan
2N3866 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N3866 Diode Transistor NPN Small Signal Transistors Scan
2N3866 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N3866 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan
2N3866 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N3866 General Transistor Transistors for RF Applications Scan
2N3866 ITT Semiconductors Semiconductor Summary 1969 Scan
2N3866 Motorola Motorola Semiconductor Datasheet Library Scan
Showing first 20 results.

2N3866

Catalog Datasheet MFG & Type PDF Document Tags

2n3866

Abstract: 2n4427 (oC) Tmb = 25 °C. (1) 2N4427. (2) 2N3866. Fig.2 DC SOAR. 1995 Oct 27 Fig.3 Power , DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay , transistors 2N3866; 2N4427 DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal , 2N3866 - 3.5 V 2N4427 - 2.0 V - 0.4 A 2N3866 2N4427 VCEO collector-emitter voltage open base 2N3866 2N4427 VEBO emitter-base voltage open collector IC
Philips Semiconductors
Original
MSA241 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 MBB199

2N3866

Abstract: Transistor 2N3866 %20in%20html%20needs%20conversion/2n3866/2N3866.htm (1 of 2) [8/31/01 2:50:04 PM] 2N3866 Collector-Emitter Saturation Voltage VCE , %20in%20html%20needs%20conversion/2n3866/2N3866.htm (2 of 2) [8/31/01 2:50:04 PM] - , 2N3866 2N3866 Silicon NPN Transistor Frequency Multiplier and Driver in VHF/UHF Transmitters C B E WINTransceiver Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO 30V 55V Collector-Base Voltage, VCBO 3.5V Emitter-Base Voltage, VEBO 400mA Continuous Collector Current, IC 5W
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Original
Transistor 2N3866 voltage multiplier ic 200mhz 1w ic 400ma, npn transistor common emitter amplifier cb radio 3866/2N3866 200MH 400MH

2N3866

Abstract: 2n4427 ï»¿â  bb53131 0Q217Ã1 bQE «APX N AMER PHILIPS/DISCRETE bTE P 2N3866 2N4427 SILICON PLANAR , v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA Collector-emitter voltage Rbe = 10 fi 2N3866 , . performance type number f (MHz) VCE (V) Po 45 2N4427 175 12 1 , Respective Manufacturer AMER PHILIPS/DISCRETE 2N3866 2N4427 A blE D ^53^31 002^762 54^ HAPX RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2n3866 2n4427
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OCR Scan
philips ferroxcube 4312 020 36690 Philips 4312 020 4312 020 36640 transistor 2N4427 2N3866 application RF 2N3866 philips 7Z5S32 7Z08867 7Z10S20 7ZI0624 53T31

2n4427

Abstract: 2N3866 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the , collector-emitter voltage open base 2N3866 2N4427 emitter-base voltage VEBO UNIT R B E=10ii 2N3866 VCEO MAX. open collector 2N3866 Ic 2N4427 collector current (DC) lc(AV , RF performance TYPE NUMBER f (MHz) VCE (V) Po (W) Gp (dB) 11 (%) 2N3866 , SYMBOL VCBO PARAMETER collector-base voltage 2N3866 CONDITIONS MIN. open emitter 55
New Jersey Semiconductor
Original

2N3866A

Abstract: RF NPN POWER TRANSISTOR 1000 WATT Purpose Discrete Selector Guide Power SO-8 2N3866 / 2N3866A 2N3866.PDF 10-28-02 Advanced , Thermal Data P D Total Device Dissipation Derate above 25º C 2N3866.PDF 10-28-02 Advanced , - 2.8 3.5 pF 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to , variable . 2N3866.PDF 10-28-02 Advanced Power Technology reserves the right to change, without , ) Selection Low Cost RF Plastic Package Options 1 1 8 1 2 2 3 5 1 4 3 2N3866.PDF
Advanced Power Technology
Original
MRF4427 RF NPN POWER TRANSISTOR 1000 WATT for transistor bfr96 npn power amplifier circuit 2N5179 2N6255 BFR91 BFR90 MRF545 MRF544 MRF5812 MRF555
Abstract: , TA = +150 ºC Forward-Current Transfer Ratio â'" 2N3866UB Low Temperature Operation 2N3866AUB V , SmallSignal Short-Circuit Forward Current 2N3866UB Transfer Ratio 2N3866AUB I C = 50 mA, V CE = 15 V, f = , Collector-Emitter Breakdown Voltage V BE = -1.5 V, I C = 40 mA 20 I CES1 2N3866UB 2N3866AUB 2N3866UB , 2N3866(A)UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier Microsemi
Original
T4-LDS-0175-1

2N3866 JANTXV

Abstract: CES2 2.0 mA h FE3 7 12 |h FE | 2N3866 2N3866A Output Capacitance V CB = 28 V, I , â'" Low Temperature Operation 2N3866 V CE = 5.0 V, I C = 50 mA, TA = -55 ºC 2N3866A DYNAMIC , mA, V CE = 15 V, f = 200 MHz Unit I CEO 2N3866 2N3866A 2N3866 2N3866A I C = 360 mA, V , 2N3866(A) Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier
Microsemi
Original
2N3866 JANTXV T4-LDS-0175

2N3866

Abstract: Transistor 2N3866 Thermal Data P D Total Device Dissipation Derate above 25ºC PRELIMINARY 2N3866/2N3866A.PDF , ) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 , otherwise indicated. Tuning capacitors are air variable . PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 , PRELIMINARY 2N3866/2N3866A.PDF 3-10-99 200 200 8000 Low Cost RF Plastic Package Options 4 , Purpose) Selection 2 1 Power SO-8 2N3866 / 2N3866A PRELIMINARY 2N3866/2N3866A.PDF
Microsemi
Original
low cost BFR90 transistor 2N3866 equivalent BFR91 parameter S 2N3866/2N3866A MRF555T MRF559 MRF8372 MRF557 MRF557T

2N3866 equivalent

Abstract: 2n3866a Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866A 2N3866UB 2N3866AUB JAN JANTX , . Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2 , ¼Adc, VCE = 5.0Vdc IC = 360mAdc, VCE = 5.0Vdc 2N3866, 2N3866UB 2N3866A, 2N3866AUB 2N3866, 2N3866UB , VCE = 5.0Vdc 2N3866, 2N3866UB IC = 50mAdc, TA = -55°C 2N3866A, 2N3866AUB HFE3 Min. Max , 15Vdc, f = 100MHz 2N3866, 2N3866UB 2N3866A, 2N3866AUB Output Capacitance VCB = 28Vdc, IE = 0, 100kHz
Microsemi
Original
MIL-PRF-19500

2N3866 equivalent

Abstract: 2N3866 Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866A 2N3866UB 2N3866AUB JAN JANTX , linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB / 2N3866AUB) above TA > +25°C 2. TA = room , , VCE = 5.0Vdc 2N3866, 2N3866UB 2N3866A, 2N3866AUB 2N3866, 2N3866UB hFE 2N3866A, 2N3866AUB , Current Transfer Ratio IC = 50mAdc, VCE = 15Vdc, f = 100MHz 2N3866, 2N3866UB 2N3866A, 2N3866AUB Output , Power Dissipation @ TA = +25°C 2N3866, A 2N3866UB / AUB Operating & Storage Junction Temperature
Microsemi
Original
2N3866 JANTX 2N3866 JAN

2N3866A

Abstract: 2n3866 2N3866 2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a , =5.0mA BVEBO IC=100uA VCE(SAT) IC=100mA, IB=20mA hFE VCE=5.0V, IC=50mA (2N3866 only) hFE VCE=5.0V, IC=50mA (2N3866A only) hFE fT fT Cob GPE VCE=5.0V, IC=360mA VCE=15V, IC=50mA, f=200MHz (2N3866 only) VCE=15V, IC=50mA, f=200MHz (2N3866A only) VCB=28V, IE=0, f=1.0MHz VCC=28V, Pout=1.0W, f=400MHz (Figure 1.) VCC
Central Semiconductor
Original

2n4427

Abstract: 2N3866 b5E D 711Dfl2b 00L3b7fl CHG â  PHIN PHILIPS INTERNATIONAL 2N3866 2N4427 SILICON PLANAR , v.h.f. and u.h.f. equipment. QUICK REFERENCE DATA R.F. performance Collector-emitter voltage 2N3866 , . 500 500 MHz type number f (MHz) VCE (V) Po (W) Gp (dB) V 10 >45 2N4427 175 12 , Respective Manufacturer 2N3866 2N4427 bSE D 711DÃSb â¡Dt.3t.7c] T27 IPHIN PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N3866 2N4427
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OCR Scan
2N3866 RF CLASS A PHILIPS 4312 amplifier Silicon Epitaxial Planar Transistor philips

2N3866

Abstract: mrf571 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · Silicon NPN, To , mW/ ºC 059-7001 Rev - 9-2002 2N3866 / 2N3866A ELECTRICAL SPECIFICATIONS (Tcase = 25 , , VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A , 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2N3866 2N3866A 500 800 Value Typ. 800 2.8 Max. 3.5 Unit MHz COB pF 059-7001 Rev - 9-2002 2N3866 / 2N3866A
Advanced Power Technology
Original
mrf571 MRF5943 MRF951 MRF571

RF 2N3866

Abstract: 2N3866 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon , our web site at www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A ELECTRICAL , ) 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF Rev , . 2N3866 / 2N3866A FUNCTIONAL Symbol Test Conditions Value Min. GPE Pout Power Gain , www.microsemi.com or contact our factory direct. 2N3866 / 2N3866A NPN NPN NPN NPN NPN NPN NPN 175
Microsemi
Original
MRF553 MRF607 MRF581A BFY90 MRF914 MRF581 MRF586

RF 2N3866

Abstract: Transistor 2N3866 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · Silicon NPN , (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter , (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) MSC1067.PDF 3-10-99 2N3866 2N3866A Typ. Max. Unit 500 800 800 - - MHz - 2.8 3.5 pF 2N3866 / 2N3866A FUNCTIONAL Symbol , capacitors are air variable MSC1067.PDF 3-10-99 2N3866 / 2N3866A . TO-39 2N5109 NPN 200
Microsemi
Original
npn UHF transistor UHF power TRANSISTOR PNP TO-39 transistor BFR91 4600 8 pin ic

t 3866 power transistor

Abstract: transistor 3866 s â  bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D , pre-driver stages in v.h.f. and u.h.f. equipment. Q U IC K R E F E R E N C E D A T A 2N3866 Collector-em , *T min. 500 500 M Hz R.F. performance type number 2N3866 2N4427 f (MHz) V C E , values in accordance w ith the A b s o lu te M ax im u m System ( I E C 134) 2N3866 Collector-base , specified 2N3866 Collector cut-off current 2N4427 'C E O 'C E O < < 20 MA 20 p A v
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OCR Scan
t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866 175MH 550S7

RCA 2N3866

Abstract: 2N3866 RF output Design File No. 80 QUGB/JD RF Power Transistors Solid State Division 2N3866 Silicon N-P-N Overlay , S a: LU 1 10 û. li. « 0.8 0.6 200 400 FREQUENCY (f)â'" MHz RCA-2N3866 is an , substantially higher power gain. The 2N3866 is intended for class-A, -B, or -C amplifier, frequency-multiplier , - Dissipation derating curve 74 File No. 80 2N3866 92CS-I767I Fig. 5 - Safe area for dc , . frequency 75 2N3866 File No. 80 too FREQUENCY HIâ'"MHz ioo FREQUENCY If)â'"MHz Fig. 8 - Typical
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OCR Scan
RCA-2N3866 RCA 2N3866 2N3866 RF output Design rca 0190 transistor rca 711 transistor c3-12

BFR90 transistor

Abstract: 2n5583 Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 , J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 , Conditions Device Type f MHz Vcc Volts out mW Typ* Min. H MHz Typ* Min. Package 2N3866 2N5179 , PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501 MRF501 MRF501 2N3866 2N4073 MM4019 2N3553 MM4019 2N3553 PNP NPN 0.5 V MRF532* MRF531 * MRF532
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OCR Scan
2N6166 MRF306 2N5032 MFR901 2N5841 BFR90 transistor mrf502 transistor transistor bfr96 BFR91 transistor npn UHF transistor 2N5179 144B-04 2N5643 MRF313A MRF517A 2N5635

2n3866

Abstract: Transistor 2N3866 2N3866 55 V - Silicon Planar Epitaxial Overlay Transistor 2.75 Transisto. http://store.americanmicrosemiconductor.com/2n3866.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3866 2N3866 5 5 V - Silic o n Planar Epit ax ial O v erlay Trans is t o r , ://store.americanmicrosemiconductor.com/2n3866.html 2 of 2 4/12/2010 9:33 PM American Microsemiconductor , 2N3866 $ 3.44 $ 2.75 $ 0.69 Total Price $ 2.75 Company Testimonials Store Policies Contact Us
American Microsemiconductor
Original
N3055

2N3866 MOTOROLA

Abstract: s-parameter 2N3866A Vdc) hFE Both 2N3866 2N3866A 5.0 10 25 200 200 â'" 1.0 500 800 - Cob , = 200 MHz) MHz fT 2N3866 2N3866A Output Capacitance (Vcb - 28 Vdc, Ig = 0, f - 1.0 MH 2 , â MOTb i 2N3866, 2N3866A MOTOROLA SC (XSTRS/R F) 4bE D â  FIG U R E 2 - POW ER , â  SEMICONDUCTOR 2N38G6 2N3866A TECHNICAL DATA The RF Line 1.0 W - 400 M Hz HIGH FREQ , C A SE 79*04 TO-205AD
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OCR Scan
2N3866 MOTOROLA s-parameter 2N3866A 2n3866a Motorola motorola 2N3866 0QT4032 Q0101 15V0C T-33-05
Abstract: , TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, TYPES 2N3866, 2N3866A, 2N3866UB, 2N3866AUB, JAN, JANTX, JANTXV , °C/W 2N3866, 2N3866A 1.0 2.9 60 30 3.5 0.4 60 175 2N3866UB, 2N3866AUB , (2N3866, 2N3866A) and 3.08 mW/°C (2N3866UB, 2N3866AUB) above TA ≥ +25°C. (2) TA = room ambient as , = 200 MHz hFE (1) VCE = 5.0 V dc IC = 50 mA dc 2N3866 2N3866A 2N3866 2N3866A 2N3866UB , case. f. Maximum limit of RθJC shall be 60°C/W for 2N3866, 2N3866A; RθJA shall be 325°C/W for Microsemi
Original
MIL-PRF-19500/398K MIL-PRF-19500/398J JANHCA2N3866 JANHCA2N3866A

t 3866 power transistor

Abstract: t 3866 transistor cuivre ( 1 mml ; 0 intérieur 7 mm ; pas 2,5 mm ; deux connexions de 15 mm. 3/4 261 2N3866 TYPICAL
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OCR Scan
c 3866 transistor transistor t 3866 3866 transistor C 3866 t 3866 3866 250MH

2N3866 MOTOROLA

Abstract: s-parameter 2N3866 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N3866 2N3866A The RF Line 1.0 W - 400 MHz H , 0 C A S E 7 9 -0 4 T O -2 0 5 A D IT O -3 9 ) MOTOROLA RF DEVICE DATA 2N3866, 2N3866A , 5.0 0.1 hFE Both 2N3866 2N3866A v CE(sat) 5.0 10 25 - 200 200 1.0 Vdc fT 2N3866 2N3866A MHz , I D , 3 / 1 6 " lo n g R 1: 5 6 Ohm s MOTOROLA RF DEVICE DATA 2-11 2N3866, 2N3866A F IG U R , S IG N A L C U R R E N T G A IN MOTOROLA RF DEVICE DATA 2-12 2N3866, 2N3866A F IG U R E 8
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OCR Scan
s-parameter 2N3866 2n3866 211 sm 190 e3055 U028
Showing first 20 results.