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2N3819 fet

Catalog Datasheet MFG & Type PDF Document Tags

7483 IC

Abstract: ic 7483 pin configuration 1M-2 2 mF combination The 2N3819 FET biased by the voltage across the 2 2 mF capacitor is used to , Q3-Q5 collector line The LF353 FET amplifier provides gain and buffering Power supply dependence is , two complementary voltages are each gated by the 2N4393 FET switches which are controlled by the , amplitude-stable triangle current into the LF357 FET amplifier The LF357 is used to drive a shaper circuit of the
National Semiconductor
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7483 IC ic 7483 pin configuration of IC 7483 ic 7483 pin diagram for IC 7483 applications of IC 7483 LM386 AN-263

ic LM386 wein bridge

Abstract: sine wave crystal controlled oscillator 2N3819 FET, biased by the voltage across the 2.2 µF capacitor, is used to control the AC loop gain by , line. The LF353 FET amplifier provides gain and buffering. Power supply dependence is eliminated by , control-loop time constants. two complementary voltages are each gated by the 2N4393 FET switches, which are , counters to produce an amplitude-stable triangle current into the LF357 FET amplifier. The LF357 is used
National Semiconductor
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ic LM386 wein bridge sine wave crystal controlled oscillator 2N3819 fet lm311 lm386 controlling ic lm311 2n3819 equivalent ic LM313

alternative of LM386

Abstract: LM386 FIXED LOW GAIN AUDIO POWER AMPLIFIER . The 2N3819 FET, biased by the voltage across the 2.2 F capacitor, is used to control the AC loop gain , by the LC in the Q3-Q5 collector line. The LF353 FET amplifier provides gain and buffering. Power , is inverted by the LF351. The two complementary voltages are each gated by the 2N4393 FET switches , the LF357 FET amplifier. The LF357 is used to drive a shaper circuit of the type shown in Figure 11
National Semiconductor
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alternative of LM386 LM386 FIXED LOW GAIN AUDIO POWER AMPLIFIER 2N3819 NATIONAL SEMICONDUCTOR 2N3810 NATIONAL SEMICONDUCTOR LM3900 VCO sine wave Oscillator jfet circuit

2n3819 equivalent ic

Abstract: 2N5045-7 monolithic dual n-channel JFET designed for. â  FET Input Amplifiers â  Low and Medium Frequency Amplifiers â  Impedance Converters â  Precision Instrumentation Amplifiers â  Comparators Siliconix BENEFITS: â'¢ Minimum System Error and Calibration 5 mV Offset Maximum (J401) 95 dB Minimum , , 2N5556-58 2N3819, 2N5457-9, MPF109, MPF111 2N3921-2, 2N4084-5, 2N5045-7, U401-6 All of the above except 2N3819 PERFORMANCE CURVES (25°C unless otherwise noted) Output Characteristic I /QS "
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2N4085CHP 2N5045 2N3819 equivalent MPF111 equivalent 2N4223-24 MONOLITHIC DUAL N-CHANNEL JFET transconductance 2N5046CHP-47CHP U403CHP-06CHP

2N3819 NATIONAL SEMICONDUCTOR

Abstract: Kt 0936 Min Max Min (MHz) Max (MHz) Max* â'¢ -. » St».-. â'¢ (MHz) 2N3819 : 25 8 15 2 1.6 100 8 4 , ) 0.170-0.210 (4.318-5.334) i nnr 0 o o 1 ^ 0.030 0.500 Pin T(18) FET N(25, 29) Pin T(18) FET P(23) 1 E , (1.016) (12.70) MAX MIN T ]_SEATING PLANE 0.100 0.016-0.019 (0.406-0.483) 0.200 Pin T(30) FET(24 , 0.135â'"0.146 ( 3.429-3.863 ) kT Pin (96) T FET 1 C G 2 E D 3 B S Pin (92) STD T FET DMOS 1 C G S 2 B S G 3 E D D Pin (94) T FET 1 B S 2 C G 3 E D NATIONAL SEMICONDUCTOR DISCRETE DEVICES
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MMBF5484 Kt 0936 National 2N3819 to92 fet p channel MMBFJ305 T0-92 2N44-16 PW4416 MMBF441S 2N5Z45

2N3819 junction fet

Abstract: transistor 2N3819  2N3819 central Semiconductor Corp. centralâ"¢ semiconductor corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 145 Adams Avenue Hauppauge, New York 11 788 1 DSS 1 gss 1 gss bvgss > gs(off) r â'¢ ISS Crss lyfsl lyfsl lyos I VDS=1 vgs=1 vgs=1 lG=1. VDS=1 VDS=1 VDS=1 VDS=1 VDS=1 vds=1 vds=1 5V 5V 5V, TÃ"=100°C OyA 5V, ID=200UA 5V, Iq=2.OnA 5V, VGS=0, f=1.OMHz 5V, VGS=0, f=1.OMHz 5V, VGS=0, f=1.OMHz 5V, VGS=0, f=1OOMHz 5V, VGS=0, f=1.OkHz 25 0.5 2000 1600 20
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2N3819 junction fet transistor 2N3819 2N3O19 2n3819 transistor VGD25 VDS1

2N2926

Abstract: R-067 250mW + 30 90-330 1mA Amplifiers 0.10 2N3711 S/NPN X20A â 250mW + 30 1801" 1mA 0.10 2N3819 X20 200mW + 25 'n' channel FET 0.35
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2N2926 2N3053 2N3054 2N3133 2N3134 2N3227 R-067 2N3055 2N3404 x20a 115W15

TIS58

Abstract: TIS58 fet : FET's Silect For General Purpose Amplifiers Typo No. Case Pol O O a . IGSS Idss Yfs VGS Ciss Crss NF CD 1 max. min. min. max. max. max. max. Notes V nA mA li mho V pF pF dB TIS58 T092 N 25 4 2.5 1300 5 6 3 Available with IDSS groups TIS59 TO 92 N 2b 4 6 2300 9 b 3 oa c o * â a nnn 7 R e o BF245 TQ18 pin circle BF244A* T092 N 30 5 2* 3000 2.2 6 2 BF245A T018 pin circle , T018 pin circle 2N3819 T092 N 25 2 2 2000 7.5 8 4 2N3820 T092 P 20 20 0.3 800 7.9 32 16 2 N5460
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TIS88A 2N5245 BF246 BF256LA BF256LB BF256LC TIS58 fet TIS88 A5T4261 BF244B BF245B BF244C BF245C A5T5460

2N2147

Abstract: fet 2n2646 250mW + 30 90-330 1mA Amplifiers 0.10 2N3711 S/NPN X20A â 250mW + 30 1801" 1mA 0.10 2N3819 X20 200mW + 25 'n' channel FET 0.35
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2N1131 2N1132 2N1146A 2N1304 2N1305 2N1307 2N2147 fet 2n2646 2n3055 tos npn 2N2926 2N987 2N697 2N1146B

2n3819 replacement

Abstract: MPF102 JFET SMALL SIGNAL FET Cross Reference (Cont'd) Industry Pari Number Type and Classification Recommended Replacement Data Sheet Page Geometry Page Industry Part Number Type and Classification Recommended Replacement 2N6453 N JFET 2N4393 202S N JFET 2N4392 2N6454 N JFET 2N4393 203S N JFET 2N3821 2N6483 D N JFET U401 204S N JFET 2N3821 2N6484 D N JFET U402 210U N JFET 2N4416 2N6585 D N JFET U404 231S , « H â'" 30 < a m < ö J232-18 J270-18 2N3819 2N3823 2N4223 2N4224 2N4416 2N4416A 2N5078
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2N6658 2N4340 2n3819 replacement MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference 2N3954 2N6568 2N3955 2N6656 2N3956 2N6657

2N2386

Abstract: TIS26 F.E.T. Parameters F.E.T. Formulae . . . . 15 Parameter Measurement 16 F.E.T. Applications 1 6 Linear Application Summary 20 Non-Linear Application Summary 31 F.E.T , Guide (P Channel) Equivalents List . F.E.T. Data Sheets . . 3 5 . 36 The Field Effect Transistor JUNCTIO N F.E.T. CONSTRUCTION â â'" N TYPE SILICON « Diffused Planar Silicon Uses , ­ sarily cause catastrophic failure. P TYPE DIFFUSION DRAIN GATE SOURCE TETRODE F.E.T. GATE 1
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2N2386 TIS26 Germanium itt 2N3575 TIS69 equivalent 2N4856 2N4861 2N486 2N5046 2N5047

Yamatake R31

Abstract: MST105D output of approximately ± 19V at 16 Hz. This square wave is used to drive junction FET switches in the , current test, the FET drivers, Q8 and Q9, are switched by out of phase signals from Q10 and Q11. This opens the FET switches Q6 and Q7 on alternate half cycles of the square wave output of the function generator. During the offset voltage, offset current test, the FET drivers are operated synchronously from , turning off Q11. R42 and R45 maintain the gates of the FET switches at zero gate to source voltage for
National Semiconductor
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Yamatake R31 MST105D DATASHEET YAMATAKE R31 Yamatake, R31 LM709 equivalent Astable Multivibrator operation amplifier LM709 LM101

fet BF244

Abstract: BF320 2N3819 TMPF-3819 (1 6W NJ32 IQ=»HA -25 V0S-15V 20 VOJ^ÃIQ 2nA -80 V^-l^lo-ÃOCia -0.5 -7.5 V0S-W 2 20 , 0.10 0.25 0.46 jIJF 0.065 0.130 L 2'oe I 3.04 1 , 0.89 M=Jâ'"-i t. (FET PINOUTS: 1-Drain, 2 , 00984 0.0472 0,0551 0,0177 0.0236 " 0.0098 (FET PINOUTS: 1-Drain, 2-Source, 3-Gate) 0.0052 0.1102
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TMPFJ308 TMPFJ309 TMPF3820 fet BF244 BF320 FET BF256 bc264 FET j303 FET 2N5458 000D073 VOS-10 VGS-10V VGS-15V

function generator circuit schematic diagram full

Abstract: Yamatake R31 FET switches in the test set and to generate the pulse and triangular waveforms The pulse generator , R42 and R45 maintain the gates of the FET switches at zero gate to source voltage for maximum , D5 and D6 The input for the integrator-feedback buffer A7 is selected by the FET switches Q4 and , factor of 1 000 before presenting them to the measurement system FET switches Q4 and Q5 are turned on by switch section S1b during these tests FET switches Q4 and Q5 are turned off during the transfer
National Semiconductor
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function generator circuit schematic diagram full MST-105D 2N3819 Application Note Results square wave signal generator charge generator fet chopper Triad F-90X AN-24

F245B

Abstract: BF256 BC264D 2N3819 BF 320 BF320A BF320B BF320C 2N3820 * * * * X-55 X-55 X-55 X-55 X-55 TO-92 TO-92 TO , (gepaarte FET's) Typ Gehäuse Pol. BUog O mm V 25 25 25 'GSS max nA Up max V 2.5 2.5 2.5 , 2N3329 2N3330 2N3331 2N3332 2N3573 2N3819 2N3820 2N3821 2N3822 2N3823 2N3824 2N3909 2N3909A 2N3970 2N3971
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3N211 F245B BF256 BFS21A U1898E vergleichsliste MPF105 3N204 3N206 3N213 100-MH

FET package TO-71

Abstract: 2N4416A JANTX ) VGS(off) (V) Min Max Min Max J204 2N3819 0.2 2 3 20 0.5 2 6.5 , *Typical Value at VDS = ­15 V, ID = ­1 mA, f = 1 KHz N-Channel Lateral DMOS FET Switches Part Number
Temic Semiconductors
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VP0808L VP1008L TP1220L BSS92 VP2020L TP2020L FET package TO-71 2N4416A JANTX SST271 TO72 package n-channel jfet jfet 2N5198 2n51* "P jfet sot23"

2N4360

Abstract: J411 fet //nlitrnn_ iFia@BOJ©Tr ©A'um©® mm M Devices. Inc. O R D E R IN G IN F O R M A T IO N (FOtHL® ItM FO K gir l® The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego's standard for Q . A. production, marketing and sales. All products that deviate from the standard JEDEC , 2N3686A 2N3687 2N3687A 2N3695 2N3696 2N3697 2N3698 2N3819 2N3820 2N3821 2N3822 2N3823 2N3824 2N3909
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MEM511 2N4360 J411 fet 2N3459 Solitron 2N3821 2N5906 uc451 MIL-SDT-750 MIL-SDT-883 2N5114 KD5I14M 2N2497 2N2498

bc547 spice model

Abstract: SPICE model BC237 reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N­Channel FET , on the FET. Step 5: Calculate R6 = (VGS + EGS) Iout Step 6: From Figure 1, read Vref for VCC & Iout , . Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 2­830 Motorola Small­Signal
ON Semiconductor
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bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MDC5001T1 MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1

BC237

Abstract: 2N3819 junction fet MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N­Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage - Continuous - Non­repetitive (tp 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM 3 1 2 Value 100 ± 20 ± 40 0.17 0.68 Unit Vdc Vdc Vpk Adc CASE 318 ­ 08, STYLE 21 SOT­ 23 (TO ­ 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR­ 5 Board(3
ON Semiconductor
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BC237 MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1 MMPQ3799

BC237

Abstract: Fet BF245 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N­Channel - Enhancement 2 GATE 3 DRAIN VN0300L Motorola Preferred Device ® 1 SOURCE MAXIMUM RATINGS Rating Drain ­ Source Voltage Drain ­ Gate Voltage Gate ­ Source Voltage ­ Continuous ­ Non­repetitive (tp 50 µs) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 -
ON Semiconductor
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Fet BF245 226AA MMSV3401T1 MPF970 MPF971 MPF3821 MPF3822
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