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Part : 2N3799 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $1.0599 Price Each : $1.3889
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2N3799 Datasheet

Part Manufacturer Description PDF Type
2N3799 Semelab PNP Low Noise, Amplifier Transistor - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=- / Hfe=250min / fT(Hz)=500M / Pwr(W)=0.36 Original
2N3799 Semico Chip Type 2C2605 Geometry 0220 Polarity NPN - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=- / Hfe=250min / fT(Hz)=500M / Pwr(W)=0.36 Original
2N3799 Advanced Semiconductor Silicon Transistors Scan
2N3799 Central Semiconductor PNP Silicon Transistor, TO-18 Scan
2N3799 Crimson Semiconductor Transistor Selection Guide Scan
2N3799 Micro Electronics Semiconductor Devices Scan
2N3799 Micro Electronics Semiconductor Device Data Book Scan
2N3799 Motorola Motorola Semiconductor Datasheet Library Scan
2N3799 Motorola European Master Selection Guide 1986 Scan
2N3799 N/A Transistor Shortform Datasheet & Cross References Scan
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2N3799 N/A Shortform Transistor PDF Datasheet Scan
2N3799 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
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2N3799 N/A Vintage Transistor Datasheets Scan
2N3799 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3799 National Semiconductor Shortform National Semiconductor Datasheet Scan
2N3799 National Semiconductor PNP Transistors Scan
Showing first 20 results.

2N3799

Catalog Datasheet MFG & Type PDF Document Tags

2N3798

Abstract: 2N3799 ~ 5.0 Vdc) (ic = 10 juAdc, Vce = 5.0 vdc) hFE 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 2N3798 2N3799 VcE(sat) 75 100 225 150 300 75 150 150 300 150 300 125 250 - - - - , | 2N3798, 2N3799 9~ Symbol Min Typ Max j Unit MHz ELECTRICAL CHARACTERISTICS (continued) (Ta = 25 , ) Voltage Feedback Ratio (IC * 1.0 mAdc, Vce = 10 Vdc, f 2N3798 2N3799 hre = *T 30 100 Cobo Cjbo hfe 3.0 , kHz) hfe 2N3798 2N3799 h0e 150 300 5.0 - - - Small-Signal Current Gain dC = 1.0 mAdc, Vce = 10
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2N3799 MOTOROLA 2N3798 MOTOROLA CHARACTERISTICS--2N3798

2N3799 MOTOROLA

Abstract: 2N3799 2N3799 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N3799 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N3799 at our online store! 2N3799 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N3799 Information Did you Know , Test Houses 2N3799 Specifications Military/High-Rel : N V(BR)CEO (V) : 60 V(BR)CBO (V) : 60 I(C
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N3798

Abstract: 2N3799 Datasheet ^^^ _ _ » _ _ â  tm 2N3798 veilera i 2N3799 Semiconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 JEDEC TO , 2N3798, 2N3799 types are Silicon PNP Epitaxial Planar Transistors designed for low noise amplifier , CHARACTERISTICS (TA = 25°C unless otherwise noted) 2N3798 2N3799 symbol test conditions min max min max units , 150 150 125 30 3.0 150 5.0 80 4.0 1.5 2.5 450 5.0 15 15 25 600 60 7.0 3.0 2.5 3.5 2N3799 MIN
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100MH

2n390g

Abstract: 2N390G TRANSISTOR '" 0.1 5 60 4.0 250 1.0 2N3798 TPQ3799 60 60 5 10 300 â'" 0.1 5 60 4.0 250 1.0 2N3799 TPQ3906 40 40 5 , 250 1.0 2N2484/2N3799 Two NPN/Two PNP Devices - Figure 4 TPQ650I 60 30 5 30 40 â'" 150 , 1.0 2N2484/2N3799 TPQ6700 40 40 :> 50 /0 â'" 10 1 200 4.5 250 10 2N3904/2N3906 42
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TPQ3724 2N3724 TPQ3725 TPQ3725A 2N2907 TPQ6502 2n390g 2N390G TRANSISTOR 2N2907 NPN Transistor 2n2222 BVC60 TPQ2221 2N2221 TPQ2222 2N2222 TPQ2483

2N3799

Abstract: 2N3799 MOTOROLA Diodes Device Data 2N3799 ELECTRICAL CHARACTERISTICS {continued} (Ta - 25°C unless otherwise noted , Device Data 2N3799 FIGURE 4 - TYPICAL CURRENT GAIN CHARACTERISTICS - 2N3799 NOISE FIGURE (dB
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2N3799

Abstract: 2N3799 SILICON AMPLIFIER TRANSISTORS â'¢ High Current Gain â'¢ High Frequency PNP AMPLIFIER TRANSISTOR TO-18 T0206AA MAXIMUM RATINGS RATINGS SYMBOL 2N3799 UNITS Collector-Emitter Voltage ^CEO -60 Vdc Collector-Base Voltage VcBO -60 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current â'" Continuous Ic -50 mAdc Total Power Dissipation @ Tc = 25UC Derate above 25°C Pd « 1-2 6.86 W mW/°C , ) 794-1666 01841 FAX: (978)689-0803 T4-4.8-860-355 REV: - 2N3799 ELECTRICAL CHARACTERISTICS (Tc - 25 C
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2N3799

Abstract: 2N3799* M A XIM U M RATINGS Characteristic C o lle cto r-E m itte r V o ltage Collector-B ase Voltage E m itter-Base V o ltage C o lle ctor C urrent - C o ntinuous Total Device D issipa tion ( , Diodes Device Data 2N3799 ELECTRICAL CHARACTERISTICS (c ontinue d) (Ta = 25°C unless o th e rw is e , , FETs and Diodes Device Data 3-67 2N3799 FIGURE 3 - FREQ UEN CY EFFECTS FIGURE 4 - TYPICAL CURRENT GAIN CHARACTERISTICS - 2N3799 rmiirTT100 10 R s = 30 Wl R s = 100 kil 10 (dB) m K Rg
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TT100

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE '" 0.1 5 60 4.0 250 1.0 2N3798 TPQ3799 60 60 5 10 300 â'" 0.1 5 60 4.0 250 1.0 2N3799 TPQ3906 40 40 5 , 250 1.0 2N2484/2N3799 Two NPN/Two PNP Devices - Figure 4 TPQ650I 60 30 5 30 40 â'" 150 , 1.0 2N2484/2N3799 TPQ6700 40 40 :> 50 /0 â'" 10 1 200 4.5 250 10 2N3904/2N3906 42 INTEGRATED
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TPQ6002 itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 TPQ2484 2N2484 ICL8008CTY ULN2151D ULN2151M ITT512

2n3810

Abstract: 2N3799 Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N2604, 2N2605, 2N3789, 2N3799, 2N3810, 2N3811 Mechanical Specifications Metallization Bonding Pad Size Top Backside
Semicoa Semiconductors
Original
2n3810 datasheet

TRANSISTOR 3kw

Abstract: 2N3799 SEME 2N3799 LAB MECHANICAL DATA Dimensions in mm (inches) PNP LOW NOISE , AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES · SILICON PLANAR EPITAXIAL PNP TRANSISTOR · CECC SCREENING OPTIONS · LOW NOISE AMPLIFIER 2.54 (0.100) Nom. APPLICATIONS: 3 1 , / °C ­65 to +200°C 0.49°C/mW 0.15°C/mW Prelim. 4/95 SEME 2N3799 LAB ELECTRICAL
Semelab
Original
TRANSISTOR 3kw

4266T

Abstract: TYP ES 2N3798, 2N3799 P -N -P SILIC ON TR A N S IS TO R S B U L L E T IN N O . D L-S 7 3 9 8 9 8 , M A R C H 1 9 6 7 - R E V IS E D M ARCH 1973 F O R L O W - L E V E L , L O W -N O IS E , H I G H , , 2N3799 P -N -P S ILIC O N TR A N S IS TO R S 'electrical characteristics at 25°C free-air temperature , 2N3798 MIN MAX -4 0 -6 0 -5 -1 0 2N3799 MIN MAX -6 0 -6 0 -5 -1 0 -1 0 -2 0 75 UNIT V V V nA f , kü , 10 0 H z , -1 0 Noise B a n d w id th = 20 H z 2N3798 MAX 7 3 2N3799 M AX 4 UNIT dB
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4266T

2N3799

Abstract: 2N3799* MAXIM UM RATINGS Characteristic C o lle c to r -E m itte r V o lta g e C o lle c to r-B a s e V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t - C o n tin u o u s T o , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-79 2N3799 ELECTRICAL CHARACTERISTICS SMALL-SIGNAL , RESISTANCE EFFECTS, f = 10 Hz M OTOROLA SMALL-SIGNAL TRAN SISTO R S, FETs AND DIODES 2N3799 F IG U , 2N3799 NOISE FIGURE (d B ) 1.0 k 10 h 100 k f. FR E Q U E N C Y (H z ) lc . C O LL E C
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T0-206AA
Abstract: S EM E 2N3799 LA B MECHANICAL DATA Dimensions in mm (inches) PNP LOW NOISE , AMPLIFIER TRANSISTOR 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES â'¢ SILICON PLANAR EPITAXIAL PNP TRANSISTOR â'¢ CECC SCREENING OPTIONS â'¢ LOW NOISE AMPLIFIER 2.54 (0.100) Nom , 0.49°C/mW 0.15°C/mW Prelim. 4/95 S EM E 2N3799 LA B ELECTRICAL CHARACTERISTICS (TA = 25 Semelab
Original

2n222a

Abstract: 2n222a datasheet 250 10 0.25 1.0 4.0 60 1.5 - 4X 2N3799 B MPQ3904 NPN AMPL/SWITCH , 2N3799 C MPQ6502 NPN/PNP AMPL/SWITCH 60 30 5.0 30 50 30 300 0.40 150
Central Semiconductor
Original
MPQ2222 MPQ2369 MPQ2907A 2N3906 MPQ6100A MPQ6700 2n222a 2n222a datasheet 2n222a npn 2n3762 2N2907 equivalent 2X PNP MPQ2222A 2N222A 2N2369 MPQ2483

2n2222 2n5401 2n5551

Abstract: TPQ6700 0.1 1.0 60 1.0 4.0 2N3799 TPQ3906 -40 -40 -5.0 50 -30 40 60 75 0.1 -1.0 1.0 -1.0 10 -1.0 -0.25 -0.85 , 0.1 5.0 0.5 5.0 1.0 5.0 10 5.0 0.25 0.80 1.0 100 0.5 4.0 2N2484 and 2N3799 NOTESr 1. C. 2. fcts at , 5.0 10 5.0 0.25 0.80 1.0 100 0.5 4.0 2N24.Ì4 and 2N3799 TPQ6700 40 40 5.0 50 30 30 50 70 0.1 1.0 1.0
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TPQ2221A TPQ5400 TPQ2907A TPQA05 TPQ7052 2n2222 2n5401 2n5551 sprague 2N3799 TPQ4002A TPQ2906 TPQ4354 TPQ5550 TPQ2906A

tpq2907

Abstract: . 5â'" 7 8.0 4.5 2N2907 2N3799 2N3906 I ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 , 2N2222 and 2N2907 0.5 4.0 2N2483 and 2N3798 0.5 4.0 2N2484 and 2N3799 ALLEGRO , 0.25 0.80 1.0 100 0.5 4.0 2N24.I4 and 2N3799 0.1 30 1.0 10 1.0 1.0 1.0
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tpq2907 05G433 TPQ2222A TPQ3904 TPQ4001A TPQ5551 TPQ6426

TZ554

Abstract: 2n2907 pnp bipolar transistor 60 â'" -1 2N3799 TPQ3904 1 NPN 60 40 6 50 40 30 â'" 0.1 1 50â'"1 1 75â'"10 1 0.20 â'" 0.85 10 4 250 , 5 150 â'" 1 5 60â'"10 5 0.25 â'" 0.8 1.0 4 100 â'" 0.5 2N2484 and 2N3799 TPQ6501 4 (Note 1) 60 30 , '" 0.8 1.0 4 100 â'" 0.5 2N2484 and 2N3799 TPQ6700 4 (Note 1) 40 40 5 50 30 30 â'" 0.1 1 50 â'" 1 1
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TZ552 TZ554 2n2907 pnp bipolar transistor 2N4258 TZ554 transistor TZ-81 TPP1000 TPP2000 TPP3000 TPP4000 TZ551
Abstract: 2N2907 2N3799 2N3906 I S P R A G U E / S EM I C O N D 8 5 1 4 0 1 9 S P RA GU E, GROUP , 4.0 2N2483 and 2N3798 1.0 1.0 100 0.5 4.0 MPSA55 2N2484 and 2N3799 â , 1.0 10 5.0 5.0 5.0 5.0 0.25 0.80 1.0 100 0.5 4.0 2N24.S4 and 2N3799 -
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TPQ6427 TPQ7041 TPQ7042 TPQ7043 TPQA06 TPQ3798

2N2605

Abstract: 2N3799 PROCESS CP588 Small Signal Transistors PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.0 x 4.0 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES 2N2605 2N3799 PN4250A CMPT5086 CMPT5087 BACKSIDE COLLECTOR
Central Semiconductor
Original
Abstract: 2N3799 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq500M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition American Microsemiconductor
Original

2N3904CSM

Abstract: 2N3904D . Search Results Part number search for devices beginning "2N3799" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N3799 2N3799X Polarity PNP PNP Package TO18
Semelab
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2N3904CSM 2N3904D 2N3904DCSM 2N3810XDCSM PNP TO77 package 2N3791 2N3791CECC 2N3791SMD 2N3791SMD-JQR-B 500MH 2N3807
Showing first 20 results.