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2N3789 Datasheet

Part Manufacturer Description PDF Type
2N3789 Central Semiconductor Leaded Power Transistor General Purpose Original
2N3789 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original
2N3789 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original
2N3789 Semico Chip: geometry 0220 polarity NPN - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original
2N3789 Advanced Semiconductor Silicon Transistors Scan
2N3789 API Electronics Short form transistor data Scan
2N3789 Boca Semiconductor SILICON PNP POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan
2N3789 Crimson Semiconductor EPITAXIAL BASE Transistor Scan
2N3789 Diode Transistor TO-3 / Various Transistor Selection Guide Scan
2N3789 Diode Transistor Transistor Short Form Data Scan
2N3789 Diode Transistor 35 to 500V Transistor Selection Guide Scan
2N3789 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3789 General Diode Transistor Selection Guide Scan
2N3789 General Transistor Power Transistor Selection Guide Scan
2N3789 Mospec Silicon PNP Power Transistor Scan
2N3789 Mospec POWER TRANSISTORS(10A,150W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan
2N3789 Motorola Motorola Semiconductor Datasheet Library Scan
2N3789 Motorola The European Selection Data Book 1976 Scan
2N3789 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3789 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

2N3789

Catalog Datasheet MFG & Type PDF Document Tags

2N3789

Abstract: 2N3790 DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the , Thermal Resistance 2N3789 2N3791 60 60 SYMBOL VCBO VCEO VEBO IC IB PD 2N3790 2N3792 80 , =1.5V VCE= Rated VCEO, VEB=1.5V, TC=150°C VEB=7.0V IC=200mA IC=4.0A, IB=400mA (2N3789, 2N3790) IC=5.0A, IB=500mA (2N3791, 2N3792) VCE=2.0V, IC=5.0A (2N3789, 2N3790) VCE=2.0V, IC=5.0A (2N3791, 2N3792
Central Semiconductor
Original

2N3716

Abstract: 2N3714 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP , types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO , IE = 0 IB = 0 IC = 0 COMSET SEMICONDUCTORS Value 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 , 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings IC
Comset Semiconductors
Original
PNP 2N3791 NPN transistor 2n3713 2N3789/2N3790/2N3791/2N3792

2N3792

Abstract: 2N3715 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP , types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCBO , IE = 0 IB = 0 IC = 0 Value 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 , 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings IC
Comset Semiconductors
Original

2N3790

Abstract: 2N3792 CHARACTERISTICS COLLECTOR-EMITTER SUSTAINING VOLTAGE!» (IC = -200m A ) 2N3789.2N3791 2N3790, 2N3792 COLLECTOR CUTOFF CURRENT (VCEO" - 6 0 V ,V b e = 1.5V, T c = 150°C)2N3789,2N3791 (VCEO= - 8 0 V .V B e = 1 .5 V ,T , CES POWER TRANSISTORS 2N3789 2N3790 2N3791 2N3792 INC 61C 00958 7 -13 2 -3 0 PNP , ABSOLUTE MAXIMUM RATINGS 2N3789 2N3791 v GBO VcEO v EBO COLLECTOR-BASE VOLTAGE COLLECTOR-EMITTER VOLTAGE , - I N C 61C00959 D ^- 2N3789 POWER TRANSISTORS 2N3790 2N3791 2N3792
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OCR Scan
IV-22 2N5737 N3789 2N5731 IV-23 C--12/

2N3790

Abstract: 2N3789 2N3789 2N3790 2N3791* 2N3792* SILICON PNP POWER TRANSISTORS .designed for medium-speed , 1-800-446-1158 / (978)794-1666 / FAX: (978)689-0803 T4-4.8-860-321 REV: - 2N3789 2N3790 2N3791* 2N3792 , Collector-Em itter Sustaining Voltage (1) Vdc 60 2N3789, 2N3791 Ic = 200 mAdc, IB = 0 ^C E O (sus) 80 2N3790, 2N3792 Collector-Em itter C utoff C u rren t 1.0 VCE= 60 Vdc, VBE = -1.5 Vdc 2N3789, 2N3791 mAdc 1.0 2N3790, 2N3792 VCF = 80 Vdc, VBF = -1.5 Vdc IcE X 5.0 2N3789, 2N3791 VCE = 60 Vdc, VB E = -1.5 Vdc, Tc
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OCR Scan

2N3789

Abstract: 2N3792 Boca Semiconducotor Corp. BSC FEATURES * Tow Gain Ranges: hFE(Min)= 15 and 30@IC=3A -2N3789.2N3790 , * Complementary NPN Types Available-2N3713 thru 2N3716 MAXIMUM RATINGS Characteristic Symbol 2N3789 2N3791 2N3790 , "o 25 50 75 100 125 150 175 200 Tc, TEMPERATURECC) PNP 2N3789 Thru 2N3792 10 AMPER POWER , 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3789 Thru , ) 2N3789, 2N3791 2N3790, 2N3792 ^CEO (sus) 60 80 V Collector -Emitter Cutoff Current (VCE=60V,VBE(ofâ
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OCR Scan
P125a

2N3792 MOTOROLA

Abstract: GG04 MOTOROLA TECHNICAL DATA SEMICONDUCTOR 2N3789. thru 2N3792 10 A M P E R E S IL IC O N PNP , 30 @ 3 A (2N3789,2N3790) 25 and 50 @ 1 A (2N3791, 2N3792) · Low VcE(sat) = 0 5 V (typ) @ lc = 4.0 A , | fc,3b7aS4 GG04 SQ5 ü I 2N3789 thru 2N3792 ELECTRICAL CH A RA CTERISTICS Characteristic , ) Sym bol V c E O ( s u î )* 2N3789, 2N3791 2 N 3 7 9 0 ,2 N 3 7 9 2 IC E X 2N 3 78 9 ,2 N 3 79 1 2N3790 , 2N379U 2N 3792 2 N 3 7 8 9 ,2 N 3 7 9 0 2 N 3 7 9 1 ,2 N 3 7 9 2 V cE (sa t)* 2N3789, 2 N 3 79 0 2 N 3 7
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OCR Scan
2N3792 MOTOROLA GG04 motorola 2n3789 2N3791 MOTOROLA 2N3713 MOTOROLA 2N3790 MOTOROLA 2N3701
Abstract: 2N3789 2N3790 2N3791 2N3792 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon , 2N3789 2N3791 60 SYMBOL VCBO VCEO 2N3790 2N3792 80 60 UNITS V 80 V VEBO IC , , Tstg ï'JC ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789 2N3791 SYMBOL , 80 - V - 1.0 - 1.0 V - 1.0 - 1.0 V VCE=2.0V, IC=5.0A (2N3789 Central Semiconductor
Original
N3790

2N3790

Abstract: 2N3791 applications FEATURES * Tow Gain Ranges: hFE(Min)= 15 and 30@IC=3A -2N3789.2N3790 25 and 50@lc=1 A -2N3791 , RATINGS Characteristic Symbol 2N3789 2N3791 2N3790 2N3792 Unit Collector-Base Voltage vcbo 60 80 V , "o 25 50 75 100 125 150 175 200 Tc, TEMPERATURECC) PNP 2N3789 Thru 2N3792 10 AMPER POWER , Collector-Emitter Sustaining Voltage (1) (lc= 200 mA, lB= 0 ) 2N3789, 2N3791 2N3790, 2N3792 ^ceo (sus) 60 80 V , )=-1.5V,Tc=150°C) (VCE= 80 V, VBE(eff)= -1,5V,Tc = 150 C ) 2N3789, 2N3791 2N3790, 2N3792 2N3789, 2N3791
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OCR Scan
m0spec

2N3789

Abstract: 2N3789 Chip: geometry 0220; polarity NPN 10.26 Transistors Transistor. http://store.americanmicrosemiconductor.com/2n3789.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3789 2N3789 C hip: geo m et ry 0 2 2 0 ; po larit y NPN Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was , Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3789 $ 12.83 $ 10.26 $
American Microsemiconductor
Original
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 2N3789 Availability Buy 2N3789 at our online store ! 2N3789 Information Cate gory » Transistors Class » Transistors; Bipolar; Si PNP Power Type » Transistors; Bipolar; Si PNP Power 2N3789 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 60 V American Microsemiconductor
Original

2N3790

Abstract: 2N3789 TYPES 2N3789, 2N3790, 2N3791, 2N3792 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS F O R P O W , . 2N3789 2N3790 2N3791 2N3792 -60 V -80 V -60 V -80 V ^ 7v 10 A > 15 A > ^ 4A See Figures 6 and 7 , n t s 5. m P O S T O F F IC E B O X 5 0 1 2 TYPES 2N3789, 2N3790, 2N3791, 2N3792 P-N-P , T E S T CONDITIONS I q -200 m A , See Note 5 VC E - - 3 0 V , VC E-4 0 V f 2N3789 2N3790 , 2 TYPES 2N3789, 2N3790, 2N3791, 2N3792 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS
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OCR Scan

3713

Abstract: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON â LEOT®«! S 6 b â  3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T > EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714 , the 2N3789, 2N3790, 2N3791 and 2N3792 respectively. INTERNAL SCH EM ATIC DIAGRAM S ABSOLUTE M AXIMUM RATINGS Symbol Param eter PNP* PN P * N pN NPN 2N3789 2N3791 2N3713 2N3715 2N , 2N3789/90 Transition Frequency Unit > > Coiiector-emitter Saturation Voltage ft Max
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OCR Scan
3713 2N3789/90/91/92 2N3713/14/15/16-2N3789/90/91

2N5068

Abstract: 2n3055 complement 4.0 4.0 2.0 4.0 4.0 2.5 2.5 0.8 2.0 4.0 4.0 2.5 2.5 2.0 2N4901 2N4904 2N4398 2N4902 2N4905 2N3789 , 2N3716 2N4904 2N4907 2N4398 2 5 -1 0 0 @ @ @ @ @ @ @ 2N4902 2N4905 2N3789 2N4908
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OCR Scan
2N5068 2N3055 2n3055 complement 2N5067 2N4399 2N4903 2N4906 2N4913 2N5301

2N5627

Abstract: 2N3789 37 SILICON POWER TRANSISTORS CURRENT GAIN 9 SATURATION VOLTAGES tnl TYPE CASE VCBO VCEO VEBO hFE YCE â c VCE«s. VBE(s> â'¢c 'b NUMBER TYPE V V V MIN. MIAX. v A V V A I A 10 AMP SILICON NPN SDT7909 TO-66 300 300 8.0 15 5.0 5.0 .50 1.20 2.0 .200 SDT7910 TO-66 150 150 8.0 10 5.0 5.0 .50 1.20 2.0 .200 IO AMP SILICON PNP Observe (-) Negative Polarity 2N3789 TO , Dbserve (- ) Negative P< Dlarity 1.20 50.0 67 2N3789 1.20 50.0 67
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OCR Scan
2N5007 2N5009 2N5290 2N5291 2N5312 2N5627 2N5314

2N3789

Abstract: 10 amp npn power transistors 1.0 0.1 350S1G 10 2N3789 PNP T03 to 80 10 150 20 90 2.0 1.0 1.0 S.0 0.5 35M3B 10 2N3790 PNP TO 3 ao
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OCR Scan
2N3442 SDT413 10 amp npn power transistors IC 351 Solidev Solidev Semiconductors 3M54E 35BSIA
Abstract: 2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can Semelab
Original

2N3789

Abstract: 2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 10A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
Original
Abstract: 2N3789 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can Semelab
Original

icl8083

Abstract: ICL8063 equivalent 2N3789 (PNP)>. The outputs from the ICL8063 supply up to 100mA to the base leads of the external power , to beta values. For 2N3055 and 2N3789 transistors used in this circuit, beta should be no more than , shunted to +30V the output transistors (2N3055 and 2N3789) will be destroyed, but since the safe operating , COLLECTOR TO BASE ON 2N3789 S A WIT FRO TO 1 A 1000pF M COLLEC ASE ON 2 TOR N3789 \\ 1 1 \ \ 1k
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OCR Scan
icl8083 ICL8063 equivalent 2n3055 Equivalent ICL8063CPE 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit JCL8063 400V2 ICH8510/8520/8530

2N3055 equivalent transistor NUMBER

Abstract: Y2w TRANSISTOR ±11V) from an op amp and boosts them to ± 30V to drive power transistors, (e.g. 2N3055 (NPN) and 2N3789 (PNP , external power transistors, careful attention should be paid to beta values. For 2N3055 and 2N3789 , . However if Vout is shunted to ± 30V the output transistors (2N3055 and 2N3789) will be destroyed, but
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OCR Scan
Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W T-19-23 ICHB510/8520/8530

2N4148

Abstract: 2N3638 transistor 2N3118 2N3789 2N4044 2N4214 2N4902 2N2642 2N3119 2N3790 2N4045 2N4215 2N4903 2N2643 2N3120 2N3791
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OCR Scan
2N3731 2N2492 2N4147 2N4148 2N2646 2N2706 2N3638 transistor 2N3638 Transistor 2n3005 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299
Showing first 20 results.