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2N3773 applications

Catalog Datasheet MFG & Type PDF Document Tags

2n3773

Abstract: 2n3773 power Amplifier 2N3773 High power NPN silicon transistor General features STMicroelectronics preferred , . It is intended for linear amplifiers and inductive switching applications. 1 2 TO-3 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3773 2N3773 TO-3 Bag April 2006 Rev 1 1/7 www.st.com 7 Electrical ratings 2N3773 1 , 2N3773 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3
STMicroelectronics
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2n3773 power Amplifier 2N3773 applications 2N3773 equivalent 2N3773 datasheets JESD97 2N3773 applications download

2N3773

Abstract: 2N3773 transistor 2N3773 High power NPN transistor Features High power dissipation Low , case. It is intended for linear amplifiers and inductive switching applications. 1 2 TO , Packaging 2N3773 2N3773 TO-3 Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 1 2N3773 Electrical ratings Table 2. Absolute maximum ratings Symbol , 2N3773 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4
STMicroelectronics
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2N3773 transistor 0015923C

RCA-2N3773

Abstract: 2N6259 RCA 17370 D T~ ~/3 2N3773, 2N4348, 2N6259 File Number 526 High-Voltage, High-Current Power Transistors , '" 120W(2N4348), 150 W (2N3773), 250 W (2N6259) a 5-A specification for hFe, VB£l and VCE(sat) (2N4348) m 8-A specification for hF£, Vee, and VC£(sat) (2N3773, 2N6259) TERMINAL DESIGNATIONS 9ZCS-2/516 JEDEC TO-2Q4AA/TO-3 The RCA-2N3773, 2N4348. and 2N6259 are silicon n-p-n transistors intended for a wide variety of medium-voltage, high-current applications. Typical applications for these transistors
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RCA-2N3773 2N6259 RCA 2n3773 rca 2N4348 RCA 8a103 2n6259 solid state 001737D T-33-/3

2n3773

Abstract: 2N3773 High power NPN transistor Features I High power dissipation I Low , case. It is intended for linear amplifiers and inductive switching applications. 1 2 TO , Packaging 2N3773 2N3773 TO-3 Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 1 2N3773 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter , 2N3773 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4
STMicroelectronics
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2N6259

Abstract: 2n3773 Power Transistors 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D File Number 526 , Industrial and Commercial Use Features: High dissipation capability - 120 W (2N4348). 150 W (2N3773). 250 , . VBe. and Vcc(sat) (2N3773, 2N6259) T-33-I5 TERMINAL DESIGNATIONS T " I- 3 92CS*27St6~ JEDEC TO-2Û4AA/TO-3 The 2N3773. 2N4348. and 2N6259 are silicon n-p-n transisTors intended for a wide variety of medium-voltage, high-current applications. Typical applications for these transistors include
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2N3773A 2n3773m 2N 6259 430E271

2N3773

Abstract: 2N3773 transistor 2N3773 High power NPN transistor Features High power dissipation Low , case. It is intended for linear amplifiers and inductive switching applications. 1 2 TO , Packaging 2N3773 2N3773 TO-3 Tray 1/7 7 Electrical ratings 1 2N3773 Electrical , junction-case Value _M_mMax Unit 1.17 °C/W 2N3773 2 Electrical characteristics , Package mechanical data 3 2N3773 Package mechanical data In order to meet environmental
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2N3773 NPN Transistor transistor marking SUs
Abstract: (2N3773), 250 W (2N6269) Rugged High Voltage Devices for Applications in Industrial and Commercial , 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3773, 2N4348, 2N6259 Hometaxial-Base , of high-voltage highcurrent applications. Typical applications for these transistors include , for hFE, VfjE. & VCE (2N4348) 8-A specification for hFE, VBE. & VcE(Mt) (2N3773. 2N6259) 140 V min I2N4348). 160 V min (2N3773) 170 V min (2N6259) â'¢ Low saturation voltaga with high beta New Jersey Semiconductor
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2N434B 100SI

Transistor 2n6099

Abstract: 2N3773 UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 , applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC , RJC TSTG UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-001,A UTC 2N3773/2N6099 P O W E R , -001,A UTC 2N3773/2N6099 P O W E R TRANSISTOR TYPICAL PARAMETERS PERFORAMCES 2N3773 2N6609 , 0.1 1 10 100 UNISONIC TECHNOLOGIES CO. LTD 3 QW-R205-001,A UTC 2N3773/2N6099
Unisonic Technologies
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Transistor 2n6099 2N6099 2N3773/2N6099

2N3773

Abstract: 2N6609 ON Semiconductort NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and , linear applications. These devices can also be used in power switching circuits such as relay or , , 2001 ­ Rev. 9 1 Publication Order Number: 2N3773/D 2 http://onsemi.com Î Î Î Î Î Î , _C unless otherwise noted) 2N3773 2N6609 2N3773 2N6609 NPN 300 200 PNP 300 200 150 , . "On" Voltage Figure 11. "On" Voltage http://onsemi.com 3 10 20 2N3773 2N6609 IC
ON Semiconductor
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2N3773 application 2N3773 NPN Audio Power AMP Transistor 2N3773-D 204AA 2N3773/D

2n3773

Abstract: 2N3773 transistor UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 , applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC , RθJC TSTG UNISONIC TECHNOLOGIES CO. LTD 1 UTC 2N3773/2N6099 P O W E R TRANSISTOR , UTC 2N3773/2N6099 P O W E R TRANSISTOR TYPICAL PARAMETERS PERFORAMCES 2N3773 2N6609 , UTC 1 10 100 0.1 1 10 UNISONIC TECHNOLOGIES CO. LTD 100 3 UTC 2N3773
Unisonic Technologies
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Abstract: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 , applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC , RθJC TSTG UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-001,A UTC 2N3773/2N6099 P O W E R , QW-R205-001,A UTC 2N3773/2N6099 P O W E R TRANSISTOR TYPICAL PARAMETERS PERFORAMCES 2N3773 , -001,A UTC 2N3773/2N6099 P O W E R TRANSISTOR Figure 7 Turn-on Switching times 10 Figure 8 -
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Abstract: UTC 2N3773/2N6099 P O W E R TRANSISTOR COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 , applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC , RθJC TSTG UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-001,A UTC 2N3773/2N6099 P O W E R , QW-R205-001,A UTC 2N3773/2N6099 P O W E R TRANSISTOR TYPICAL PARAMETERS PERFORAMCES 2N3773 , 100 0.1 UNISONIC TECHNOLOGIES 1 10 100 CO. LTD 3 QW-R205-001,A UTC 2N3773 Unisonic Technologies
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Abstract: 2N3773 High power NPN transistor Features â  High power dissipation â  Low , -3 metal case. It is intended for linear amplifiers and inductive switching applications. du o 1 2 , Packaging 2N3773 2N3773 TO-3 Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3773 Electrical ratings 1 Table 2. Absolute maximum ratings Symbol , 1.17 °C/W 2N3773 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified STMicroelectronics
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Abstract: 2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power , Order Number: 2N3773/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , . Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 4. Indicates JEDEC Registered Data. 2N3773 , and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2N3773 NPN 300 ON Semiconductor
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2N3773G
Abstract: 2N3773 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Complementary 2N6609 General Purpose Amplifier specially suited for Power Conditioning Applications ABSOLUTE MAXIMUM RATINGS , TRANSISTOR 2N3773 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified , % µ Continental Device India Limited Data Sheet Page 2 of 4 2N3773 TO-3 Metal Can , Sheet Page 3 of 4 2N3773 Notes TO-3 Metal Can Package Disclaimer The product Continental Device India
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C-120 2N3773R 280202E

2N3773 MOTOROLA

Abstract: MOTOROLA 2N3773 = 0.8 A · For Low Distortion Complementary Designs The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices , Preferred Device Complementary Silicon Power Transistors 2N6609 PNP 2N3773* NPN SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3773/D MOTOROLA 2 Motorola Bipolar Power Transistor , ) Characteristic ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) 2N3773 2N6609 2N3773
Motorola
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2N3773 MOTOROLA MOTOROLA 2N3773 motorola 2n6609
Abstract: NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 , other linear applications. These devices can also be used in power switching circuits such as relay or , Publication Order Number: 2N3773/D 2 http://onsemi.com â' For information on tape and reel , Specifications Brochure, BRD8011/D. 2N6609 2N3773G 2N3773 Device Package Shippingâ'  TOâ'204 100 , 2N3773*, PNP 2N6609 NPN 2N3773*, PNP 2N6609 NPN 300 200 PNP 300 200 150°C 150°C hFE ON Semiconductor
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2N3773 MOTOROLA

Abstract: 2N3773 transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3773/D NPN Com plem entary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power , A For Low Distortion Com plem entary Designs 2N3773* PNP 2 N 66 09 ` Motorola Preferred , L A 2N3773 2N6609 ELECTRICAL CHARACTERISTICS (T q = 2 5 °C unless otherwise noted
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transistor 2n3773 2n3773 on

2N3773G

Abstract: 2N3773 NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 , other linear applications. These devices can also be used in power switching circuits such as relay or , , LLC, 2004 July, 2004 - Rev. 10 1 Publication Order Number: 2N3773/D 2 http , , please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N6609 2N3773G 2N3773 , otherwise noted) NPN 2N3773*, PNP 2N6609 NPN 2N3773*, PNP 2N6609 NPN 300 200 PNP 300 200
ON Semiconductor
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8 pin ic 3773

2N6099L

Abstract: 2N3773G UNISO TE NIC CHNO G SCO LTD LO IE ., 2N3773/2N6099 POWER TRANSISTOR COM PLEM EN T ARY SI LI CON T RAN SI ST ORS Ì DESCRI PT I ON The UTC 2N3773/2N6099 are complement silicon power transistors designed for high power audio, disk head positions and other linear applications. These device , Packing Tray Tray 1 of 3 QW-R205-001,Ba 2N3773/2N6099 Ì POWER TRANSISTOR ABSOLU T E M AX , 60 1.4 4 2.2 1.5 V V V A 2 of 3 QW-R205-001,Ba 2N3773/2N6099 POWER TRANSISTOR
Unisonic Technologies
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2N6099L 2N3773L-T30-Y 2N3773G-T30-Y 2N6099L-T30-Y 2N6099G-T30-Y
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