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2N3771 power transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N3771

Abstract: 2n3772 3.75 2.5 Adc _ - 2 Motorola Bipolar Power Transistor Device Data 2N3771 2N3772 0.02 , Bipolar Power Transistor Device Data 3 2N3771 2N3772 100 50 VCC = 30 V _ IC /lB = 10 lB1 - lB2 T , -204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3771 2N3772 M otorola , Gain Figure 9. Collector Saturation Region 4 Motorola Bipolar Power Transistor Device Data , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771/D High Pow er NPN
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LB2T 2N3771 power circuit motorola 2n3771 2N3771/D

3771- IC

Abstract: 2N3772 motorola choices for future use and beat overall value. REV 7 Motorola Bipolar Power Transistor Device Data , the power handling ability of a transistor: average Junction temperature and second break down. Safe , Circuit Figure 5. Turn-On Time Motorola Bipolar Power Transistor Device Data 3-19 V V * · O , . DC Current Gain Figure 9. Collector Saturation Region 3-20 Motorola Bipolar Power Transistor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Power NPN Silicon Power Transistors . designed
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3771- IC 2N3772 motorola 1N5825 MSD6100
Abstract: Motorola Bipolar Power Transistor Device Data 2N37712N3772 0.05 0.1 5.0 2000 10 t, TIME (ms) Figure 2. Thermal Response â'" 2N3771, 2N3772 There are two limitations on the power , BELOW lB = 100 mA Figure 4. Switching Time Test Circuit Motorola Bipolar Power Transistor Device , ) Figure 8. DC Current Gain Figure 9. Collector Saturation Region Motorola Bipolar Power Transistor , : COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 -
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2N3772 motorola

Abstract: 1N5825 Bipolar Power Transistor Device Data 5 2N3771 2N3772 Motorola reserves the right to make changes , Motorola Bipolar Power Transistor Device Data *2N3771/D* 2N3771/D Motorola , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Preferred , 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER , MOTOROLA 2 Motorola Bipolar Power Transistor Device Data ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î
Motorola
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2N6257

2n3772

Abstract: 2N3771 power circuit ON Semiconductort High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. 2N3771* 2N3772 *ON Semiconductor , ÎÎÎ IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Rating Symbol VCEO VCEX VCB VEB IC IB *MAXIMUM RATINGS 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS 2N3771 40 50 50 2N3772 60 80 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter
ON Semiconductor
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2N3772

Abstract: 2N3771 two limitation on the power handling ability of a transistor:average junction temperature and second , MOS PEC HIGH POWER NPN SILICON POWER TRANSISTORS General-purpose linear amplifiers,series pass , ) = 4 0 v (max ) @ lc = 30 a, 'b = 6 0 A - 2N3771 vce(sat) = 4 0 v (max ) @ lc = 20 a "b = 4 0 a ~ 2N3772 MAXIMUM RATINGS FIGURE -1 POWER DERATING 150 Ã' £ 125 I 1 100 I 75 to !2 S 50 5 o 0 , , TEMPERATI!RE(°C) NPN 2N3771 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO
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2N3771 power transistor S200 203-CA 2N3772 APPLICATIONS

2N3772

Abstract: 2N3771 HIGH POWER NPN SILICON POWER TRANSISTORS General-purpose linear amplifiers,series pass , Voltage- BSC vce(sat) = 4 0 v (max ) @ lc = 30 a, >b = 6 0 a - 2n3771 vce(sat) = 4 0 v (max ) @ lc = 20 A. "b = 4 0 A - 2n3772 MAXIMUM RATINGS Corp. FIGURE -1 POWER DERATING 150 125 100 75 50 25 0 N V, 0 25 50 75 100 125 150 175 200 Tc, TEMPERATI!RE(°C) NPN 2N3771 2N3772 Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage VCEO 40 60 V
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transistor 2n3772

2N3771

Abstract: 2N3771 power circuit ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , Publication Order Number: 2N3771/D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , 2000 Figure 2. Thermal Response - 2N3771, 2N3772 There are two limitations on the power handling , Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS · Forward Biased Second Breakdown Current Capability w IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771
ON Semiconductor
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Power Transistor 2N3771 transistor 2N3771

1N5825

Abstract: 2N3771 ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 , , COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature
ON Semiconductor
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Abstract: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , otherwise noted) 2N3771, 2N3772 2N3771, 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125 , There are two limitations on the power handling ability of a transistor: average junction temperature , is permissible to increase the pulse power limits until limited by T J(max). 40 ms 2N3771 , Adc @ VCE = 40 Vdc â' 2N3771 = 2.5 Adc @ VCE = 60 Vdc â' 2N3772 Pbâ'Free Packages are Available ON Semiconductor
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2N3772

Abstract: 2N3771 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , , COLLECTOR CURRENT (AMP) 30 There are two limitations on the power handling ability of a transistor , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS ÎÎ Î Î Î , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (Note 1) Symbol 2N3771
ON Semiconductor
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2N3772G 2N3771G

2N3772

Abstract: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 518 Devices Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Symbol @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 2N3771 2N3772 Unit , Base Current Collector Current Total Power Dissipation 40 50 7.0 7.5 30 60 100 7.0 5.0 , ) Characteristics Symbol Min. Max. Unit 2N3771 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772
Microsemi
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2N3771

Abstract: 2N3772 TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Symbol @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 2N3771 2N3772 Unit , Base Current Collector Current Total Power Dissipation 40 50 7.0 7.5 30 60 100 7.0 5.0 , ) Characteristics Symbol Min. Max. Unit 2N3771 2N3772 V(BR)CEO 40 60 Vdc 2N3771 2N3772
Microsemi
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2n377

2N3771

Abstract: 2N3772 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit 2N3771 , 2N3771/2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W , 2N3771 V CB = 50 V for 2N3772 V CB = 100 V o for ALL V CB = 30 V T j = 150 C 2 5 10 mA mA
STMicroelectronics
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P003N 2N3771/2N3772

2N3772

Abstract: 2N3771 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N3771 V , o C 1/4 2N3771/2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case , Current (V BE = -1.5V) for 2N3771 for 2N3772 for all V CB = 50 V V CB = 100 V VCB = 30 V T j =
STMicroelectronics
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P003F
Abstract: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR I STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 V CEO 2N3772 Collector-Emitter Voltage (I E = 0) 40 60 V V CEV , Temperature December 2000 150 -65 to 200 W o C 1/4 2N3771/2N3772 THERMAL DATA R thj-case , CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V STMicroelectronics
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2N3771

Abstract: 2N3772 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 2N3772 60 V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV , T stg December 2000 150 -65 to 200 W o C 1/4 2N3771/2N3772 THERMAL DATA R , . Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB =
STMicroelectronics
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2N3771

Abstract: 2n3771 ssl 2N3771 NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMP. http://store.americanmicrosemiconductor.com/2n3771.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3771 2N3771 NPN PLANAR SILIC O N TRANSISTO R( AUDIO PO W ER AM PLIF IER DC TO , 2N3771 $ 6.25 $ 5.00 $ 1.25 Total Price $ 5.00 Company Testimonials Store Policies Contact Us , )CBO (V): I(C) Max. (A): Absolute Max. Power Diss. (W): Maximum Operating Temp (øC): I(CBO) Max. (A): h
American Microsemiconductor
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2n3771 ssl

2N3772

Abstract: 2N3771 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Uni t 2N3771 V CEO Collector-Emitter Voltage (IE = 0) 2N3772 40 60 V V CEV , December 2000 150 -65 to 200 A W o C 1/4 2N3771/2N3772 THERMAL DATA R t hj-ca se , I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 for 2N3772 for all VCB = 50 V
STMicroelectronics
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diode cc 3053

Abstract: cc 3053 , Transistor, NPN, Silicon, High-Power Types 2N3771, and 2N3772, JANTX and JANTXV 4. NATURE OF CHANGE , -19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for use by all , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1
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MIL-PRF-19500 diode cc 3053 cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT MIL-PRF-19500/413C MIL-S-19500/413B 17C/W
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