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JAN2N3767 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN visit Digikey Buy
JANTXV2N3767 Microsemi Corporation Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN visit Digikey Buy

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Part : 2N3767JANTX Supplier : COBHAM Manufacturer : Avnet Stock : 141 Best Price : $20.99 Price Each : $23.99
Part : 2N3767JANTXV Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $32.39 Price Each : $35.39
Part : JAN2N3767 Supplier : COBHAM Manufacturer : Avnet Stock : - Best Price : $17.69 Price Each : $19.29
Part : JANTX2N3767 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $33.72 Price Each : $35.77
Part : 2N3767 Supplier : Fairchild Semiconductor Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : 2N3767 Supplier : SSI Technologies Manufacturer : Bristol Electronics Stock : 12 Best Price : - Price Each : -
Part : 2N3767 Supplier : NES Manufacturer : Bristol Electronics Stock : 8 Best Price : $5.8240 Price Each : $8.96
Part : 2N3767 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 9 Best Price : $5.8240 Price Each : $8.96
Part : 2N3767-DIE Supplier : Motorola Manufacturer : Bristol Electronics Stock : 147 Best Price : - Price Each : -
Part : JANTX2N3767 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 183 Best Price : - Price Each : -
Part : JANTXV2N3767 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 59 Best Price : - Price Each : -
Part : JANTX2N3767 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 142 Best Price : $35.6400 Price Each : $35.6400
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2N3767 Datasheet

Part Manufacturer Description PDF Type
2N3767 Central Semiconductor Power Transistors Original
2N3767 Microsemi NPN POWER SILICON TRANSISTOR Original
2N3767 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=40-160 / fT(Hz)=10M / Pwr(W)=20 Original
2N3767 Advanced Semiconductor Silicon Transistors Scan
2N3767 API Electronics Transistor Selection Guide Scan
2N3767 API Electronics Short form transistor data Scan
2N3767 API Electronics Short form transistor data Scan
2N3767 Diode Transistor Transistors Scan
2N3767 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3767 General Diode Transistor Selection Guide Scan
2N3767 General Transistor Power Transistor Selection Guide Scan
2N3767 Motorola Motorola Semiconductor Datasheet Library Scan
2N3767 Motorola The European Selection Data Book 1976 Scan
2N3767 Motorola European Master Selection Guide 1986 Scan
2N3767 Motorola Power Transistor Selection Guide Scan
2N3767 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2N3767 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3767 N/A Semiconductor Master Cross Reference Guide Scan
2N3767 N/A Shortform Transistor Datasheet Guide Scan
2N3767 N/A Vintage Transistor Datasheets Scan
Showing first 20 results.

2N3767

Catalog Datasheet MFG & Type PDF Document Tags

2n3767

Abstract: 2N3766 Central 2N3766 2N3767 NPN SILICON POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN power transistors manufactured by the , 2N3767 Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage VCEO 60 , VEB=6.0V 500 A 500 A BVCEO IC=100mA (2N3766) IC=100mA (2N3767) BVCEO VCE(SAT , pF R1 (25-October 2007) Central TM Semiconductor Corp. 2N3766 2N3767 NPN SILICON
Central Semiconductor
Original
transistor 2N3766 TO-66 CASE TRANSISTOR TO-66 100KH

2N3767

Abstract: 2N3766 Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units VCEO VCBO , 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS
Microsemi
Original
2000C MIL-PRF-19500/518
Abstract: 2N3767 NPN Transistor 11.67 Transistors Bipolar Silicon NPN Power T. http://store.americanmicrosemiconductor.com/2n3767.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3767 2N3767 NPN Trans is to r Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , Price: Our Price: You Save: Americanmicrosemi 2N3767 $ 14.59 $ 11.67 $ 2.92 Total Price $ 11.67 American Microsemiconductor
Original
Abstract: Qualified Level 2N3766 JAN JANTX JANTXV 2N3767 MAXIMUM RATINGS Ratings Collector-Emitter , Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol 2N3766 2N3767 Units , 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 ICBO 10 10 µAdc IEBO 500 OFF CHARACTERISTICS , of 2 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (conâ'™t) Characteristics Symbol Microsemi
Original
MIL-PRF-19500/

2N3767

Abstract: 2N3766 TECHNICAL DATA 2N3766 JAN, JTX, JTXV 2N3767 JAN, JTX, JTXV MIL-PRF QPL DEVICES , 2N3767 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W 6.0 , otherwise noted) Characteristics Symbol Min. Max. Unit 2N3766 2N3767 V(BR)CEO 60 80 2N3766 2N3767 ICEO 500 500 µAdc 2N3766 2N3767 ICEX 10 10 µAdc 2N3766 2N3767 , 2N3766, 2N3767 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max
New England Semiconductor
Original

2N3767 JANTX

Abstract: 2N3767 NPN Power Silicon Transistor 2N3766 & 2N3767 Features · · Available in JAN, JANTX, and JANTXV per , 60 80 6.0 2.0 4.0 25 -65 to +200 2N3767 80 100 Units Vdc Vdc Vdc Adc Adc W °C Thermal , 2N3767 Collector - Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector - Emitter Cutoff Current , VCB = 100 Vdc Emitter - Base Cutoff Current VEB = 6.0 Vdc 2N3766 2N3767 2N3766 2N3767 2N3766 2N3767 , 2N3766 & 2N3767 Electrical Characteristics -con't ON Characteristics (2) Forward Current Transfer Ratio
Aeroflex / Metelics
Original
2N3767 JANTX 888-641-SEMI

2N3767

Abstract: 2N3766 2N3766 and 2N3767. 14 MIL-PRF-19500/518D 5. PACKAGING * 5.1 Packaging. For acquisition purposes , , SILICON, POWER, TYPE 2N3766, 2N3767, JAN, JANTX, AND JANTXV This specification is approved for use by , , TC = +25°C. 2N3766 2N3767 PT (1) VCBO VCEO VEBO IB IC TJ and TSTG RJC , 20 20 Type 2N3766 2N3767 Max 50 50 VCE(sat)1 VCE(sat)2 IC = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max Min 2.5 2.5
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Original
C-2688 MIL-PRF-19500/518C MIL-PRF-19500 T0-66
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 2N3767 Availability Buy 2N3767 at our online store ! 2N3767 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3767 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V American Microsemiconductor
Original

2N3767

Abstract: 2N3766 Centralâ"¢ Semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦ I 2N3766 2N3767 NPN SILICON POWER TRANSISTOR JEDEC TO-66 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types are silicon NPN by the epitaxial base process designed for power amplifier and appli cat i ons. MAXIMUM RATINGS (TC=25°C unless otherwise noted) symbol 2N3766 2N3767 vCB0 80 100 vCE0 60 80 , =0, f=100kHz 60 30 ko 20 ko 10 2N3767 20 ko 10 V V V A A W 3C 'C/W MAX MIN MAX UNIT 0, . 1
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OCR Scan
TO-66

2N3766 MOTOROLA

Abstract: 2N3766 TECHNICAL DATA SEMICONDUCTOR 2N3766 2N3767 M E D IU M - P O W E R N P N S IL IC O N T R A N S I S T , -213AA Package Complementary to PNP 2N3740 (2N3766) and 2N3741 (2N3767) M A X IM U M R A TIN G S Rating C o , tu re R ange = 2 5°C Symbol VC E O «? 2N3766 i 60 80 1 2N3767 60 100 Unit V de V dc V , >7554 00044=10 2N3766, 2N3767 fl I 7 " 3 3 -0*7 E L E C T R IC A L C H A R A C T E R IS T IC S , 2N376S 2N3767 2N3786 2N3767 2N3766 2N3767 *CBO *CEO 2N376Ö 2N3767 v (BR)CEO Vdc 60 so _ (Tc = 25*C u
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OCR Scan
2N3766 MOTOROLA 2N3741 MOTOROLA 2n3767 motorola motorola 2n3766 2N3740 motorola 2h37

2N3766

Abstract: 2N3767 operating area graph (continuous dc) for types 2N3766 and 2N3767. 12 MIL-PRF-19500/518C(USAF) 5 , , TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV This specification is approved , 100 60 80 6 6 2 2 4 4 -65 to +200 -65 to +200 7 7 2N3766 2N3767 1 , mA dc f = 10 MHz Max Min IC = 1 A dc IB = 0.1 A dc Type Min 2N3766 2N3767 20 20 , = 1 A dc IB = 0.1 A dc Type IC = 500 mA dc IB = 50 mA dc Min 2N3766 2N3767 Max
-
Original
MIL-PRF19500 MIL-S-19500/518B
Abstract: na. TELEPHONE: (973) 378-2008 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA (212) 227-8008 FAX: (973) 3784080 2N3767 MAXIMUM RATINGS (Tc = 25'Cunlwoth.rwlse notad) (TO-66) 2N3767 Unit 100 Vdc V EB 6.0 Vdc VCEO 80 Vdc 4.0 Adc Symbol Rating Collector-Base Voltage VCB Emitter-Base Voltage Collector-Emitter Voltage Collector Current - Continuous 'c Peak 4.0 Base Current 2.0 Adc 20 0.133 7.5 Watts W/"C °C/W -65 to New Jersey Semiconductor
Original
J300M
Abstract: 2N3767+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2N3767

Abstract: LE17 SILICON NPN TRANSISTOR 2N3767 · Low Saturation Voltage · High Gain Characteristics · Hermetic TO66 Metal Package · High Reliability Screening Options Available · Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT Collector ­ Base Voltage Collector ­ Emitter Voltage Emitter ­ , Number 9157 Issue 1 Page 1 of 2 SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25
Semelab
Original
LE17
Abstract: SILICON NPN TRANSISTOR 2N3767 â'¢ Low Saturation Voltage â'¢ High Gain Characteristics â'¢ Hermetic TO66 Metal Package â'¢ High Reliability Screening Options Available â'¢ Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PT Collector â'" Base Voltage Collector â'" Emitter Voltage , Number 9157 Issue 1 Page 1 of 2 SILICON NPN TRANSISTOR 2N3767 ELECTRICAL CHARACTERISTICS (TC = 25 Semelab
Original

2N3767

Abstract: 2N3767 JANTX 2N3767 Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. VCEO = 80V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX
Semelab
Original
Abstract: 2N3767+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.160 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq10M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2N1716

Abstract: 2N3879 BIPOLAR NPN MESA POWER TRANSISTORS DEVICE TYPE PEAK c AMPS VCE (sat) max VOLTS PACKAGE bvceo VOLTS hFE min/max < o m < c @ ' b A A / T0-205 (T° -5) o 2N1714* 2N1715* 2N1716 2N1717* 60 100 60 100 0.75 0.75 0.75 0.75 20 min 20 min 40 min 40 min 0.2/5.0 0.2/5.0 0.2/5.0 0.2/5.0 2.0 2.0 2.0 2.0 0.2/0.02 0.2/0.02 0.2/0.02 0.2/0.02 nr ^ TO-213 (TO-66) - 2N3584* 2N3585* 2N3766* 2N3767* 2N3738 2N3739* 2N3879" 300 400 60 80 225 300 75 5.0 5.0 1.0
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OCR Scan
2N3741A

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N3767 YES YES YES /518A 10-A 2N3846 YES YES X /412 11-C 2N3847 YES YES X /412 11-C 2N3867 YES YES YES , 75V 80V 2N1047A 2N1049A 2N424 2N3419 2N3421 2N3767 2N1722 2N1724 90V
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OCR Scan
2N389 2N1479 2N1489 2N6352 2N6350 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N1016B

2N3820

Abstract: RF 2N3766 2N3767 2N3791 2N3792 2N3821 through 2N3823 2-5 2-5 2-6 2N4948 2N4949
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OCR Scan
2N3820 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468

2N372A

Abstract: 2N3680 20 2N3767 HR NPN T066 80 A AO- â'¢160 5/0.5 10M 20 2N3789 CECC PNP T03 60 10 25- â'¢90 2/1 AM 150
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OCR Scan
2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N372A 2N3680 2N3809 T072 2N2979DCSM 150M

2NXXXX

Abstract: NPN Transistor 10A 400V to3 7.5V @0.5A 20@0.2A 2N17R2N1715 40@0.2A 2N 1716.2N 1717 2.0V @0.2A 2N424 2N3419 2N3421 2N3767
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OCR Scan
transistor 2n 523 transistor 2N 3440 2n3741 MIL c 3420 transistor TO-59 Package NPN Transistor 15A 400V to3 88DQ0787 2N1016C 2N1016D 2N1480 2N1481 2N1484
Showing first 20 results.