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Part Manufacturer Description Datasheet BUY
JANTX2N3749 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-59, Metal, 3 Pin visit Digikey
JAN2N3749 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin visit Digikey
JANTXV2N3749 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin visit Digikey

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Part : JANTXV2N3749 Supplier : Signetics Manufacturer : Bristol Electronics Stock : 84 Best Price : $78.72 Price Each : $96.00
Part : JANTXV2N3749 Supplier : Solitron Devices Manufacturer : Bristol Electronics Stock : 96 Best Price : $78.72 Price Each : $96.00
Part : JANTXV2N3749 Supplier : Microsemi Manufacturer : NexGen Digital Stock : 76 Best Price : - Price Each : -
Part : JANTX2N3749 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 105 Best Price : $148.9600 Price Each : $166.8100
Part : JANTX2N3749 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 14 Best Price : $169.8200 Price Each : $188.6900
Part : JANTX2N3749 Supplier : Microsemi Manufacturer : New Advantage Stock : 52 Best Price : - Price Each : -
Part : JANTXV2N3749 Supplier : Microsemi Manufacturer : New Advantage Stock : 45 Best Price : - Price Each : -
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2N3749 Datasheet

Part Manufacturer Description PDF Type
2N3749 Microsemi NPN Transistor Original
2N3749 API Electronics 5 Amp NPN Transistors Scan
2N3749 API Electronics Short form transistor data Scan
2N3749 API Electronics Short form transistor data Scan
2N3749 Diode Transistor NPN TO-111 / TO-59 Transistors Scan
2N3749 Diode Transistor Transistor Short Form Data Scan
2N3749 General Diode Transistor Selection Guide Scan
2N3749 General Semiconductor Low Frequency Transistors Scan
2N3749 General Transistor NPN Power Transistors Scan
2N3749 Motorola Motorola Semiconductor Datasheet Library Scan
2N3749 N/A Basic Transistor and Cross Reference Specification Scan
2N3749 N/A Transistor Shortform Datasheet & Cross References Scan
2N3749 N/A Shortform Transistor PDF Datasheet Scan
2N3749 N/A Shortform Transistor PDF Datasheet Scan
2N3749 N/A Catalog Scans - Shortform Datasheet Scan
2N3749 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3749 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3749 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3749 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3749 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

2N3749

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2n3748, 2n3751 ' . 2n3746 2n3749 2n37s2 unit Collectorâ'"Base Voltage VcBO 60 80 100 Volts , SILICON PLANAR POWER TRANSISTORS =13 DE^jl 00435CIE 0000047 7 API ELECTRONICS INC TYPES 2N3746,2N3749 , % duty cycle. 2N3746, 2N3749, 2N37S2 MAXIMUM SAFE OPERATING REGION 7â'"- &S- a ¿D -V CONDITIONS , mA, lâ'ž = 0 70 Volts 'ceo lB = 0, Vce = 50V 100 hFE 1 2N3746 lc = 10 mA, VCE = 2 V j 2N3749 ( 2N3752 15 30 75 h< ' ' ( 2N3746 lc = 1 A, VCE = 5 V ] 2N3749 ( 2N3752 20 40 100 60 120 300 -
OCR Scan
2N3744 2N3751 2N3747 2N3750 2N3748 2N3759 2M3744
Abstract: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on , ://www.microsemi.com. FEATURES â'¢ JEDEC registered 2N3749 â'¢ Low saturation voltage â'¢ Low , : 949-380-6100 sales.support@microsemi.com Page 1 of 6 2N3749 MECHANICAL and PACKAGING â'¢ â'¢ â , Dimensions on last page. PART NOMENCLATURE JAN 2N3749 (e3) Reliability Level JAN = JAN Level , Ph: 949-380-6100 sales.support@microsemi.com Page 2 of 6 2N3749 ELECTRICAL CHARACTERISTICS Microsemi
Original
MIL-PRF-19500/315 MIL-STD-750 H28/1 FED-STD-H28/1 T4-LDS-0328 190-32UNF-2A
Abstract: 2N3749 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV NPN , ://www.microsemi.com. FEATURES â'¢ JEDEC registered 2N3749 â'¢ Internal metallurgical bond option , Page 1 of 6 2N3749 MECHANICAL and PACKAGING â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ CASE: Nickel Plated , JAN 2N3749 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV , -0328, Rev. 1 (11/19/13) ©2013 Microsemi Corporation Page 2 of 6 2N3749 ELECTRICAL CHARACTERISTICS Microsemi
Original
Abstract: 2N3585 2N3619 2N3623 2N3627 2N3675 2N3676 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 JAN 2N3749 JTX 2N3749 JTXV 2N3749 2N3750 Case TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 TO-5 TO-5 TO -
OCR Scan
2N2891 2N3016 2N2892 2N2893 2N2984 2N2985 2N2986
Abstract: N I T JAN, JANTX, & JANTXV 2N2880 JAN, JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN T , -4 A-4 A-4 A-4 Isolation Resistance (2N3749) 70 D.C. Current Gain (1.) D.C. Current Gain (1 , SYMBOL TEST 7Tb M U N I T JAN, JANTX, & JANTXV 2N2880 JAN. JANTX, & JANTXV 2N3749 , ) 8-13 IUNIT JAN. JANTX, & JANTXV 2N2880 JAN. JANTX, & JANTXV 2N3749 MICROSEMI CORP/ UATERTOÃ , 2N3749 T-33-09 Switching Speed TIME (m icroseconds) Switching Speed Characteristics 2 -
OCR Scan
MIL-S-19500/315 2N288U
Abstract: COLLECTOR CURRENT = 5 AMPS NPN TYPES- Continued D evice No 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV 2N3419 2N3420 JAN 2N3420 JTX 2N3420 JTXV 2N3420 2N3421 JAN 2N3421 JTX 2N3421 JTXV 2N3421 2N3469 2N3506 2N35Q7 2N3583 2N3584 2N3585 2N3619 2N3623 2N3627 2N3675 2N3676 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 JAN 2N3749 JTX 2N3749 JTXV 2N3749 2N3750 C ase TO-5 TO111 TO111 TO -5 T O -5 TO -5 TO -5 TO -5 STUD -
OCR Scan
Abstract: 2N3749 FEATURES â'¢ Meets MIL-S-19500/315 â'¢ Collector-Base Voltage: 110V â'¢ Fast Switching: tr tf , ± 016 1 40 ± 254 1 .381 G .424-437 10.77-11.10 H .185-.215 4.70-5.46 JAN, JANTX, & JANTXV 2N3749 T , 60 m JAN, JANTX. & JANTXV 2N2880 JAN. JANTX, & JANTXV 2N3749 ELECTRICAL SPECIFICATIONS (at 25 , 61 PRINTED IN U.S.A. JAN, JANTX, & JANTXV 2N2880 JAN, JANTX, & JANTXV 2N3749 Forward Bias Safe , JANTXV 2N3749 Thermal Response .01 .02 .05 .1 .2 .5 1 2 5 10 20 50 100 200 5001000 TIME (milliseconds -
OCR Scan
200SC 2N2880-2N3749
Abstract: 2N3676 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 JAN 2N3749 JT X 2N3749 JTXV 2N3749 2N3750 C ase TO -5 -
OCR Scan
DDD025E 2N3226 2N3507
Abstract: 3.33 60 2N3749 TO-111/1 100 80 8 40 120 5 1 .25 1.2 1 .1 3. 33 60 JAN TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 m A JTX TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 liiA JTXV TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 111/1 2N3750 TO-111/1 60 40 7 -
OCR Scan
TO61 package TO111 package QQ435T2 Q0435TE
Abstract: 3.33 60 2N3749 TO-111/1 100 80 8 40 120 5 1 .25 1.2 1 .1 3. 33 60 JAN TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 m A JTX TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 111A JTXV TO- 110 80 8 40 120 5 1 .25 1.2 1 .1 3.33 60 2N3749 111/1 2N3750 TO-111/1 60 40 7 -
OCR Scan
UQ43ST2
Abstract: /1 2N3749 TO- 100 80 8 40 120 5 1 .25 1.2 1 .1 3. 33 60 111/1 JAN TO- 110 80 8 40 120 5 1 .25 1.2 1 . 1 3.33 60 2N3749 111/1 JTX TO- 110 80 8 40 120 5 1 .25 1. 2 1 .1 3.33 60 2N3749 111/1 JTXV TO- 110 80 8 40 120 5 1 .25 1. 2 1 .1 3.33 60 2N3749 111/1 2N3750 TO- 60 40 7 100 300 5 1 .25 1. 2 1 .1 3.33 60 111/1 -
OCR Scan
D-733 D-7--33
Abstract: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 1000C (2) Operating & Storage Junction Temperature Range Symbol Value Units , 111604 Page 1 of 2 2N2880, 2N3749 JAN SERIES ELECTRICAL CHARACTERISTICS (Con't) Characteristics Microsemi
Original
JANTXV 2N2880 equivalent
Abstract: TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level 2N2880 JAN JANTX JANTXV 2N3749 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 1000C (2) Operating & Storage Junction Temperature Range Symbol Value Units , 120101 Page 1 of 2 2N2880, 2N3749 JAN SERIES ELECTRICAL CHARACTERISTICS (Con't) Characteristics Microsemi
Original
Abstract: 2N3749+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq40M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
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Abstract: , POWER TYPES 2N2880, 2N3749, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all , 1 (TO ­ 59) and for type 2N3749, see figure 2 (TO ­ 59). 1.3 Maximum ratings. PT 1/ PT 2 , 2, 2N3749 (TO-59). 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF , MIL-PRF-19500/315F FIGURE 2. Physical dimensions of transistor type 2N3749 (TO-59). 5 MIL-PRF , standards for Federal Service Handbook H28, part I. FIGURE 2. Physical dimensions of transistor type 2N3749 -
Original
01903 diode cc 3053 sd 431 transistor MIL-PRF19500 sd 1074 transistor Stancor MIL-S-19500/315E MIL-PRF-19500
Abstract: 14 14 14 14 14 2N3719 2N3720 2N3738 2N3739 2N3740 2N3741 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 JA N 2N3749 J T X 2N3749 2 N 3 ' 50 2N375 1 2N3752 2N3766 2N3767 2N37"1 J A N 2N3771 J T X 2N37"' l -
OCR Scan
2N3186 4116 2n j 5804 tr j 5804 2N3920 2n3442 4116-2n 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715
Abstract: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« 5 Amp, 80V, Planar, NPN Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 FEATURES · Meets MIL-S-19500/315 · Collector-Base Voltage: 110V · Fast Switching: tr t, = 300nSec max · Low Saturation Voltage: 0.25V max @ 1A DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and , D - H ( - H * JAN, JANTX, & JANTXV 2N3749 TO-111 c- ; INCHES 400 - -
OCR Scan
LM 3041 2N2B80-2N3749
Abstract: 2N3749 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq40M @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original
Abstract: 2N3749+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq40M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original
Abstract: 2N3749+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq40M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original
Showing first 20 results.