MIL-PRF-19500/402F MIL-PRF-19500/402E 2N3739 MIL-PRF-19500 MIL-STD-750 T58220 - Datasheet Archive
The documentation and process conversion measures necessary to comply with this document shall be completed by 12 November 2009.
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 12 November 2009. MIL-PRF-19500/402F MIL-PRF-19500/402F 12 August 2009 SUPERSEDING MIL-PRF-19500/402E MIL-PRF-19500/402E 12 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3739 2N3739, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500 MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500 MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66). 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. PT (1) TC = +100C W 2N3739 2N3739 PT (1) TC = +25C Types RJC VCBO VCEO VEBO IB IC TSTG and TJ W C/W V dc V dc V dc A dc A dc C 20 13 7.5 325 300 6.0 0.5 1.0 -55 to +200 (1) For temperature-power derating curves, see figure 2. Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://assist.daps.dla.mil/. AMSC N/A FSC 5961 MIL-PRF-19500/402F MIL-PRF-19500/402F Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS1 S Term 1 Term 2 Dimensions Inches Millimeters Min Max Min Max .620 15.75 .250 .340 6.35 8.64 .350 8.89 .115 .145 2.92 3.68 .050 .075 1.27 1.91 .028 .034 0.71 0.86 .360 .500 9.14 12.70 .050 1.27 .142 .152 3.61 3.86 .958 .962 24.33 24.43 .190 .210 4.83 5.33 .093 .107 2.36 2.72 .570 .590 14.48 14.99 Emitter Base Notes 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 8. Pin 1 is the emitter, pin 2 is the base. The collector shall be electrically connected to the case. FIGURE 1. Physical dimensions (similar to TO-66). 2 4, 6 6 4 3 3 MIL-PRF-19500/402F MIL-PRF-19500/402F 1.4 Primary electrical characteristics at TA = +25C. Limit hFE1 (1) hFE3 (1) VBE VCE = 10 V dc VCE = 10 V dc VCE = 10 V dc IC = 10 mA dc IC = 100 mA dc IC = 100 mA dc VCE(SAT)2 IC = 250 mA dc IB = 25 mA dc Cobo VCB = 100 V dc VCE = 10 V dc IE = 0 mA dc IC = 100 mA dc f = 10 MHz 100 kHzf1 MHz V dc Min Max 30 V dc 2.5 20 Switching 1 6 ton toff s pF 1 40 200 |hfe| s 1.5 3.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 MIL-PRF-19500. 3 MIL-PRF-19500/402F MIL-PRF-19500/402F 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500 MIL-PRF-19500, MIL-STD-750 MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical characteristics are as specified in 1.3, 1.4 and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this revision to maintain qualification. 4 MIL-PRF-19500/402F MIL-PRF-19500/402F * 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500 MIL-PRF-19500 JANTX and JANTXV levels only (1) 3c Thermal impedance (see 4.3.2) 9 Not applicable 11 hFE2 and ICBO1 12 See 4.3.1 13 Subgroup 2 of table I herein, ICBO1 = 100 percent of initial value or 1 A dc, whichever is greater hFE2 = ±20 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: 2N3739 2N3739 - VCB = 10 - 30 V dc, TJ = +162.5C ±12.5C 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW , (and VH where appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 MIL-PRF-19500 and table I herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV), of MIL-PRF-19500 MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method B3 1037 For solder die attach: VCB 10 V dc, 2,000 cycles. TA +35C. 1026 For eutectic die attach: VCB = 10 V dc, TA +35C adjust PT to achieve TJ = +150C min. Conditions 5 MIL-PRF-19500/402F MIL-PRF-19500/402F * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method C2 2036 Test condition A, weight = 10 lbs, T = 15 seconds. C5 3131 Thermal resistance, see 4.3.2, RJC(max) = 7.5C/W. C6 1037 For solder die attach: VCB 10 V dc, 6,000 cycles. TA +35C. 1026 For eutectic die attach: VCB = 10 V dc, TA +35C adjust PT to achieve TJ = +150C min. Conditions * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 MIL-PRF-19500 and as specified in table II herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750 MIL-STD-750. 6 MIL-PRF-19500/402F MIL-PRF-19500/402F * TABLE I. Group A inspection. Limits MIL-STD-750 MIL-STD-750 Unit Symbol Inspection 1/ Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 Breakdown voltage, collector to emitter 3011 Bias condition D, IC = 5.0 mA dc * Collector to base cutoff current 3036 Bias condition D, VCB = 325 V dc ICBO1 10 A dc * Collector to emitter cutoff current 3041 Bias condition A, VCE = 300 V dc, VBE = 1.5 V dc ICEX 20 A dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6.0 V dc IEBO 0.1 mA dc Base to emitter, non-saturated voltage 3066 Test condition B, VCE = 10 V dc, IC = 100 mA dc; pulsed (see 4.5.1) VBE 1 V dc Collector to emitter voltage (saturated) 3071 IC = 100 mA dc; IB = 10 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.75 V dc Collector to emitter voltage (saturated) 3071 IC = 250 mA dc; IB = 25 mA dc; pulsed (see 4.5.1) VCE(sat)2 2.5 V dc Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) hFE1 30 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 50 mA dc; pulsed (see 4.5.1) hFE2 30 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 100 mA dc; pulsed (see 4.5.1) hFE3 40 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 250 mA dc; pulsed (see 4.5.1) hFE4 25 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE5 10 ZJX See footnotes at end of table. 7 V(BR)CEO °C/W 300 V dc 200 MIL-PRF-19500/402F MIL-PRF-19500/402F * TABLE I. Group A inspection - Continued. Limits MIL-STD-750 MIL-STD-750 Unit Symbol Inspection 1/ Method Conditions Min Max Subgroup 3 High-temperature operation: Collector to base cutoff current TA = +150C 3036 Bias condition D, VCB = 325 V dc ICBO2 150 A dc TA = -55C Low-temperature operation: VCE = 10 V dc; IC = 100 mA dc; pulsed (see 4.5.1) hFE6 Turn-on time VCC = 150 V dc; IC = 500 mA dc; IB = 50 mA dc (see figure 3) ton 1.5 s Turn-off time VCC = 150 V dc; IC = 500 mA dc; IB1 = IB2 = 50 mA dc (see figure 3) toff 3.5 s Forward-current transfer ratio 3076 15 Subgroup 4 Pulse response: Magnitude of common emitter, small-signal short-circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc; IC = 100 mA dc; f = 10 MHz |hFE| 1.0 6 Small-signal short-circuit forward-current transfer ratio 3206 VCE = 20 V dc; IC = 100 mA dc f = 1 kHz hfe 35 300 Open circuit output capacitance 3236 VCB = 100 V dc; IE = 0 mA dc; 100 kHz f 1 MHz Cobo 3051 TC = +25C; t = 1 s; 1 cycle; (see figure 4) Subgroup 5 Safe operating area (continuous dc) Test 1 VCE = 80 V dc; IC = 250 mA dc Test 2 VCE = 290 V dc; IC = 6 mA dc See footnotes at end of table. 8 20 pF MIL-PRF-19500/402F MIL-PRF-19500/402F * TABLE I. Group A inspection - Continued. Limits MIL-STD-750 MIL-STD-750 Method Conditions Subgroup 5 - Continued Safe operating area (switching) Unit Symbol Inspection 1/ 3053 Load condition C (unclamped inductive load) (see figure 5) TA = +25C; duty cycle 10 percent; Rs = 1; tr = tf 500 ns Test 1 tp approx 8 ms (vary to obtain IC); RBB1 = 100; VBB1 10 V dc; RBB2 = ; VBB2 = 0 V dc; VCC 100 V dc; IC = 500 mA dc; the coil used shall provide a minimum inductance of 3.5 mH at 500 mA with max. dc resistance of 0.5 ohm (for reference only: Acme T58220 T58220, or equivalent) Test 2 tp approx 8 ms (vary to obtain IC); RBB1 = 100; VBB1 10 V dc; RBB2 = ; VBB2 = 0 V dc; VCC 100 V dc; IC = 100 mA dc; the coil used shall provide a minimum inductance of 25 mH at 100 mA with max. dc resistance of 1.0 ohm (for reference only: Triad C-48u, centertapped, or equivalent.) Safe operating area (switching) TA = +25C; duty cycle 10 percent; tp approx 8 ms (vary to obtain IC); VCC 100 V dc; IC = 1 A dc; Rs = 1; clamp voltage = 300 V dc (see figure 6) Electrical measurements See table I, subgroup 2 1/ For sampling plan, see MIL-PRF-19500 MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3, 4, and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. 9 Min Max MIL-PRF-19500/402F MIL-PRF-19500/402F * TABLE II. Group E inspection (all quality levels) - for qualification and re-qualification only. MIL-STD-750 MIL-STD-750 Inspection Method Conditions Sample plan 45 devices c=0 Subgroup 1 Temperature cycling 1051 Hermetic seal Fine leak Gross leak 500 cycles. 1071 Test conditions G or H. Test conditions C or D. See table I, subgroup 2. Electrical measurements Subgroup 2 High temperature reverse bias 1039 Condition A, 1,000 hrs. See table I, subgroup 2. Electrical measurements Sample size N/A Subgroup 4 See MIL-PRF-19500 MIL-PRF-19500. Thermal impedance curves 3 devices c=0 Subgroup 5 Barometric pressure 1001 Condition B, VCBO = 325 V dc. Subgroup 8 Reverse stability 45 devices c=0 45 devices c=0 1033 Condition B. 10 MIL-PRF-19500/402F MIL-PRF-19500/402F Temperature-Power Derating Curve TC=25°C 2N3739 2N3739 DC Operation Maximum Rating (W) 25 20 15 10 5 0 25 50 75 DC Operation Thermal Resistance Junction to Case = 7.5ºC/W 100 125 150 175 200 225 Tc (ºC) (Case) Note: Max Finish-Alloy Temp = 175.0ºC NOTES: 1. Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperature (TJ +200C) and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C where the maximum temperature of electrical test is performed. 4. Derate design curves chosen at TJ +125C and +110C to show power rating where most users want to limit TJ in their application. FIGURE 2. Temperature-power derating graph. 11 MIL-PRF-19500/402F MIL-PRF-19500/402F NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each 20 ns; duty cycle 1 percent; generator source impedance shall be 50 ohms. 2. Output sampling oscilloscope: Zin 100 k; Cin 50 pF; rise time 2.0 ns. FIGURE 3. Pulse response test circuit. 12 MIL-PRF-19500/402F MIL-PRF-19500/402F FIGURE 4. Maximum safe operating area graph (continuous dc). 13 MIL-PRF-19500/402F MIL-PRF-19500/402F FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 14 MIL-PRF-19500/402F MIL-PRF-19500/402F NOTES: 1. Either a clamping circuit or clamping diode may be used. 2. The coil used shall provide a minimum inductance of 25 mH at 1 A with a maximum dc resistance of 1 ohm. For reference only: Triad C-48u (center-tapped), or equivalent (see 4.4.5) 3. RS 1 ohm, 12 W, 1% tolerance max., (noninductive). Procedure: 1. With switch Sl closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero. 3. Perform specified endpoint tests. FIGURE 6. Clamped inductive sweep test circuit. 15 MIL-PRF-19500/402F MIL-PRF-19500/402F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail firstname.lastname@example.org. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at http://assist.daps.dla.mil . 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 16 MIL-PRF-19500/402F MIL-PRF-19500/402F Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2009-027) Review activities: Army - AR, AV, MI, SM Navy - AS, SH Air Force - 19 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at http://assist.daps.dla.mil/ . 17