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2N3716 Central Semiconductor Corp Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN visit Digikey Buy
2N3716 LEAD FREE Central Semiconductor Corp TRANS NPN 80V 10A TO-3 visit Digikey Buy
JAN2N3716 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN visit Digikey Buy
JANTX2N3716 Microsemi Corporation Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-204AA, 2 PIN visit Digikey Buy

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2N3716 Datasheet

Part Manufacturer Description PDF Type
2N3716 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original
2N3716 Microsemi NPN High Power Silicon Transistor Original
2N3716 On Semiconductor General Purpose Bipolar Transistor, NPN, 80V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original
2N3716 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Original
2N3716 Advanced Semiconductor Silicon Transistors Scan
2N3716 Boca Semiconductor SILICON NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan
2N3716 Central Semiconductor BJT, NPN, Power Transistor, IC 10A - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan
2N3716 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
2N3716 Diode Transistor TO-3 / Various Transistor Selection Guide Scan
2N3716 Diode Transistor 35 to 500V Transistor Selection Guide Scan
2N3716 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N3716 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3716 General Diode Transistor Selection Guide Scan
2N3716 General Transistor Power Transistor Selection Guide Scan
2N3716 Mospec POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=50-150 / fT(Hz)=4M / Pwr(W)=150 Scan
2N3716 Motorola Motorola Semiconductor Datasheet Library Scan
2N3716 Motorola The European Selection Data Book 1976 Scan
2N3716 Motorola European Master Selection Guide 1986 Scan
2N3716 Motorola 10A Power Transistors Silicon NPN Scan
2N3716 Motorola Power Transistor Selection Guide Scan
Showing first 20 results.

2N3716

Catalog Datasheet MFG & Type PDF Document Tags

2N3792

Abstract: 2N3715 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO , IE = 0 IB = 0 IC = 0 Value 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 COMSET SEMICONDUCTORS Unit 80 V 100 60 V 80 7.0 V 1/5
Comset Semiconductors
Original
PNP 2N3791 2N3713/2N3714/2N3715/2N3716

2n3716

Abstract: Qualified Level 2N3715 JAN JANTX JANTXV 2N3716 MAXIMUM RATINGS Ratings Collector-Emitter , 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W W 0 , ) Characteristics Symbol Min. Max. Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 , VBE = 1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N3715, 2N3716 JAN SERIES
Microsemi
Original
MIL-PRF-19500/ 1000C

2N3716

Abstract: 2N3714 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO , 2N3792 2N3714 2N3716 2N3789 2N3791 2N3713 2N3715 2N3790 2N3792 2N3714 2N3716 2N3789 2N3790 2N3791 2N3792 2N3713 2N3714 2N3715 2N3716 Unit 80 V 100 60 V 80 7.0 V 1/5 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP Symbol Ratings IC
Comset Semiconductors
Original
NPN transistor 2n3713

2N3715

Abstract: 2N3792 r z T SGS-THOMSON Ä 7 # RülDeæi[Liera©iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON , 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use , 10 4 150 -65 to 200 200 2N3716 2N3792 100 80 Unit C ollector-B ase V oltage (I e = 0) C o lle , . October 1995 1/4 2N3715/2N3716/2N3791 /2N3792 THERMAL DATA »thj-case Therm al R esistance , 200 mA fo r 2N3715/2N3791 fo r 2N3716/2N3792 Min. Typ. Max. 1 1 10 10 5 Unit < < EE V
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OCR Scan
2N3792, 3715 2n 3950 2N3715AND2N3792 2N3715/2N3716/2N3791 3716/2N3792 2N3716/2N3792 P003N
Abstract: 2N3713 2N3714 2N3715 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN , PD Continuous Base Current Thermal Resistance 2N3714 2N3716 100 VEBO IC Continuous , , 2N3716) IC=5.0A, IB=0.5A (2N3713, 2N3714) MAX 1.0 UNITS mA 10 mA 5.0 mA 60 V 80 V 1.0 V IC=5.0A, IB=0.5A (2N3715, 2N3716) IC=5.0A, IB=0.5A (2N3713, 2N3714) 0.8 V Central Semiconductor
Original

2N3716

Abstract: 2N3791 MOTOROLA Pd 0JC TJ' Tstg 2N3715 60 80 7.0 10 4.0 150 1.17 - 6 5 t o +200 2N3716 80 100 7.0 10 4.0 150 1.17 U , °C) Collector-Emitter Sustaining Voltage (1) (IC - 200 mAdc, I b - 0) Symbol Ie b o All Types ICEX 2N3715 2N3716 2N3715 2N3716 VCEO(sus)' 2N3715 2N3716 t'FE* 2N3715, 2N3716 2N3715,2N3716 VCE(sat)' 2N3715, 2N3716 v BE(sat)* 2N3715, 2N3716 Vb e * All Types hfe All Types Typ US Min - Max 5.0 Unit mAdc mAdc 1.0 1.0 , must fall within the applicable Safe Area to avoid causing a collector-emitter Figura 13. 2N3716
-
OCR Scan
2N3791 MOTOROLA 3715 transistor 175-C

2N3716 MOTOROLA

Abstract: 2N3715 MOTOROLA Symbol 2N3715 2N3716 Unit VCEO 60 80 Volts Collector­Base Voltage VCB 80 , . These devices feature: 2N3715 2N3716 Silicon NPN Power Transistors NPN SEMICONDUCTOR , hfe 4.0 - - 2N3715, 2N3716 Base­Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) Unit 2N3715, 2N3716 2N3715, 2N3716 Collector­Emitter Saturation Voltage (1) (IC = , = 3.0 Adc, VCE = 2.0 Vdc) Min IEBO 2N3715, 2N3716 hFE* - 2N3715 2N3716
Motorola
Original
2N3716 MOTOROLA 2N3715 MOTOROLA motorola 2n3716 2N3715/D

2N3715

Abstract: 2N2716 2N3715 2N3716 NPN SILICON TRANSISTOR JEDEC TO-3 CASE description MAXIMUM RATINGS (TC , Dissipation Operating and Storage Temperature Thermal Resistance 2N3713 2N3714 SYMBOL 2N3715 2N3716 UNIT , =0.5A (2N3713, 2N3714) 1.0 VCE(SAT) lC=5.0A, lB=0.5A (2N3715, 2N3716) 0.8 VBE(ON) VCE=2.0V, lc=3.0A 1.5 VBE(SAT) lC=5.0A, Ib=0.5A (2N3713, 2N3714) 2.0 VBE(SAT) lC=5.0A, Ib=0.5A (2N3715, 2N3716) 1.5 hFE VCE=2.0V, IQ=1.0A (2N3713, 2N3714) 40 120 hFE VCE=2.0V, IQ=1.0A (2N3715, 2N3716) 50 150 hFE
-
OCR Scan
2N2716 lc50a

2N3716

Abstract: 2N3713 Thru 2N3716 Characteristic Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage vCBO 80 100 , ://www.bocasemi.com 2N3713 Thru 2N3716 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , mA, lB= 0 ) 2N3713, 2N3715 2N3714, 2N3716 ^CEO (sus) 60 80 V Collector -Emitter Cutoff Current (VCE , , VBE(off)= -1,5V,Tc= 150 C ) 2N3713, 2N3715 2N3714, 2N3716 2N3713, 2N3715 2N3714, 2N3716 'cEX O O O o , Current Gain (IC=1.0A,VCE=2.0V) (lc=3.0A, VCE= 2.0 V) 2N3713, 2N3714 2N3715, 2N3716 2N3713, 2N3714 2N3715
-
OCR Scan

2N3714

Abstract: 2n2715 2N3713 thru 2N3716 NPN SILICON NPN POWER TRANSISTORS. . . . designed for medium-speed , . 0 Rating Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage VC8 80 100 Volts , 1.050 Collector connected to case. CASE 11 01 (TO-3) 3-26 2N3713 thru 2N3716 NPN ELECTRICAL , . 2N3716 VCEO(sus)* 60 ao I Vdc DC Current Gain * (Ic * I Adi'. Vce = 2 Vdc) (Ic = 3 Adc. VC£ = 2 Vdc) 2N3713, 2N3714 2NT3715, 2N3716 2N3713, 2N3714 2N3715, 2N371S hFE* 25 50 15 30 90 150 Collector-Emitter
-
OCR Scan
2n2715 2M371 2N3789-92 T71ER

2N3716

Abstract: 2N3714 \ 0 25 50 75 100 125 150 175 200 Tc , TEMPERATURE(°C) NPN 2N3713 Thru 2N3716 Characteristic Symbol 2N3713 2N3715 2N3714 2N3716 Unit Collector-Base Voltage VCBO 80 100 V Collector-Emitter Voltage , H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N3713 Thru 2N3716 NPN ELECTRICAL , Collector-Emitter Sustaining Voltage (1) (lc= 200 mA, lB= 0 ) 2N3713, 2N3715 2N3714, 2N3716 ^CEO (sus) 60 80 V , (off)= -1.5V,Tc= 150°C ) (VCE= 80 V, VBE(off)= -1,5V,Tc= 150 C ) 2N3713, 2N3715 2N3714, 2N3716 2N3713
-
OCR Scan

2N3716

Abstract: 2N3715 2N3715/2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS n 2N3715 AND 2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN 2N3715 2N3716 , 1995 1/4 2N3715/2N3716/2N3791/2N3792 THERMAL DATA R thj -ca se Thermal Resistance , mA 5 for 2N3715/2N3791 for 2N3716/2N3792 o T c = 150 C for 2N3715/2N3791 for 2N3716/2N3792
STMicroelectronics
Original
2N3715/2N3716 2N3715/2N3716/2N3791/2N3792

2N3715

Abstract: 2N3716 Qualified Level 2N3715 JAN JANTX JANTXV 2N3716 MAXIMUM RATINGS Ratings Collector-Emitter , 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc W W 0 , ) Characteristics Symbol Min. Max. Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 , VBE = 1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 120101 Page 1 of 2 2N3715, 2N3716 JAN SERIES
Microsemi
Original
MIL-PRF-19500/408

2N3716

Abstract: 2N3716 JAN 2N3716. 12 10 MIL-PRF-19500/408J NOTES: 1. The input waveform is supplied by a pulse , 2N3716. The MIL-PRF-19500/622 is preferred over the MIL-PRF-19500/408 whenever interchangeability is not a problem. For new design use 2N7368 instead of 2N3716. The 2N3716 only is inactive for new design , , HIGH-POWER, TYPES 2N3715 AND 2N3716, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by , 4.0 10 10 -65 to +200 -65 to +200 5.0 117 80 60 2N3715 1.5 5.0 117 100 80 2N3716
-
Original
2N3716 JAN 2N3715 JANTX equivalent jan,tx series semiconductors C-2688 MIL-PRF-19500/408H MIL-PRF-19500

2N3716

Abstract: NPN Power Silicon Transistor 2N3715 & 2N3716 Features · · Available in JAN, JANTX, and JANTXV per , 2N3716 80 100 Units Vdc Vdc Vdc Adc Adc W W °C 5.0 117.0 -65 to +200 Operating & Storage , 60 Vdc VCB = 80 Vdc 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 Symbol V(BR)CEO Mimimum , ICES - Adc Revision Date: 3/1/2012 New Product 1 2N3715 & 2N3716 Electrical , 0.9 Adc 2N3715 2N3716 (3) Pulse Test: Pulse Width = 300 s, Duty Cycle ~ 2.0 %. Outline Drawing
Aeroflex / Metelics
Original
41--SEMI 888-641-SEMI

2857 transistor

Abstract: 2N3715 TECHNICAL DATA MIL-PRF 2N3715 JAN, JTX, JTXV 2N3716 JAN, JTX, JTXV QPL DEVICES , 2N3715 2N3716 Units VCEO VCBO VEBO IB IC PT 60 80 80 100 Vdc Vdc Vdc Adc Adc , . Unit 2N3715 2N3716 V(BR)CEO 60 80 2N3715 2N3716 ICBO 10 10 µAdc IEBO 1.0 , 2N3715 2N3716 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)-794-1666 / (978) Fax: (978) 689-0803 Vdc 03/98 REV: E Page 1 of 2 2N3715, 2N3716 JAN SERIES ELECTRICAL CHARACTERISTICS
New England Semiconductor
Original
2857 transistor

2N3713

Abstract: 2N3714 TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR , temperature (unless otherwise noted) 2N3713 2N3714 2N371S 2N3716 *Collector-Base V o lt a g e , 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS "electrical , 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS switching , E B O X 9012 D A L L A S . T E X A S 752 2 2 5-101 TYPES 2N3713, 2N3714, 2N3715, 2N3716
-
OCR Scan
2SC 9012 9012 transistor k130k1
Abstract: NPN Power Silicon Transistor 2N3715 & 2N3716 Features â'¢ Available in JAN, JANTX, and JANTXV , 2N3715 2N3716 Units 60 80 Vdc Collector - Base Voltage VCEO VCBO 80 100 , 2N3715 2N3716 V(BR)CEO 60 80 - Vdc 2N3715 2N3716 ICBO - 10 10 µAdc , Current VBE = -1.5 Vdc, VCE = 60 Vdc VBE = -1.5 Vdc, VCE = 80 Vdc 2N3715 2N3716 ICEX - 10 10 µAdc Collector - Emitter Cutoff Current VCB = 60 Vdc VCB = 80 Vdc 2N3715 2N3716 Aeroflex / Metelics
Original

NPN transistor SST 117

Abstract: 2N3713 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON POWER TRANSISTORS T'JJwJ FEBRUARY 1968 - REVISED OCTOBER 1984 , 2N3716 â'¢Collector-base voltage 80 V 100V 80 V 100V â'¢Collector-emitter voltage II3 = 0) 60 V 80 V 60 , } "ts DÃ~|fl1b].7ab D03bS72 E -Ã"961726 TEXAS INSTR (OPTO) 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON , ) PARAMETER test conditions 2N3715 2N3716 UNIT MIN TYP MAX MIN TYP MAX v(BR)CEO lc = 0.2 A, Ib = 0, See , ,2N3714,2N3715,2N3716 1 N-P-N SILICON POWER TRANSISTORS â  thermal characteristics PARAMETER MIN TYP
-
OCR Scan
NPN transistor SST 117 J01B L72B 235CC T-33-/3

2N3715

Abstract: Vceo 80V Ic 0.5A PARAMETER VALUE 2N3715 100 2N3715 VCEO 80 2N3716 VCBO 60 Collector-Base Voltage V Collector-Emitter Voltage V 2N3716 VEBO UNIT 80 Emitter-Base Voltage 7 V , ) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 60 IC= 200mA ; IB= 0 2N3716 V 80 , 10 2N3716 VCE= 100V; VBE(off)= -1.5V VCE= 80V; VBE(off)= -1.5V, TC=150 1.0 10 5.0 ICEX
INCHANGE Semiconductor
Original
Vceo 80V Ic 0.5A NPN Transistor VCEO 80V 100V 2N3715/3716 2N3791/3792

mje15033 replacement

Abstract: BD262 DARLINGTON MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442
Motorola
Original
mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 BD262A DARLINGTON 2N3055 2N6576 2N6577 2N6578 MJ15012 MJE15030

BU108

Abstract: MJ3055 to220 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442
Motorola
Original
BU108 MJ3055 to220 2N6277 2SC1943 transistor Bc 574 2n6107 MOTOROLA BUV21 2N6339 2N6341 2N6497 MJ15011 MJ15016

BU108

Abstract: 2N3055 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
BU100 BDV64 AN415A BDX54 BU326 MJE2955T ST MJE2955T MJE3055T 220AB BU208A MJE16106 MJ16012

pin configuration transistor bd140

Abstract: 2SD669 equivalent 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD136 BD138 BD140 BD140-10 MJ10009 TIP101

texas 2n3055

Abstract: BU108 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
texas 2n3055 2N5655 equivalent 2n3055 replacement 2n3055 MJ15003 2N3055/2N3055 transistor equivalent to220 2N5981 pnp transistor MJ2955 204AA TIP102 TIP106 TIP107 TIP31C

tip3055 equivalent

Abstract: IC 3526 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
tip3055 equivalent IC 3526 transistor MJ15024 RCA1C13 Mj21194 2N3791 equivalent BD802 TIP32C TIP120 TIP121 TIP122 TIP125

BDV65B equivalent

Abstract: BU108 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
BDV65B equivalent buv48 equivalent tip127 pin details mje340 2SD424 BDV65B BDV64B TIP126 TIP127 TIP73B TIP74

TIP36

Abstract: BD413 175 175 175 175 NPN 2N3715 MJ3000(2) PNP 2N3791 MJ2500(2) 2N3792 80 2N3716 2N5878 MJ3001
Motorola
Original
TIP36 BD413 2SC331 2sc2159 BD419 2SD364 MJ410 TIP74A TIP74B TIP75 TIP75A TIP75B
Showing first 20 results.