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2N3700UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 visit Digikey Buy
2N3700 Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN visit Digikey Buy
JANTXV2N3700UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 visit Digikey Buy
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JAN2N3700UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 visit Digikey Buy
JANTX2N3700UB Microsemi Corporation Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 visit Digikey Buy

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2N3700 Datasheet

Part Manufacturer Description PDF Type
2N3700 Microsemi 140 Volts 1 Amp NPN BIPOLAR TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 Microsemi Low Power NPN Silicon Transistor Original
2N3700 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80V 1A TO18 Original
2N3700 Motorola Bipolar Transistor, General Transistors NPN Silicon - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 Semelab High Voltage, Medium Power, NPN Transistor for High Reliability Applications - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 Semico Chip: geometry 4500 polarity PNP - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 Semico Type 2N3700 Geometry 4500 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 STMicroelectronics GENERAL PURPOSE AMPLIFIERS - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Original
2N3700 STMicroelectronics General purpose amplifiers Original
2N3700 STMicroelectronics General purpose amplifiers Original
2N3700 Boca Semiconductor GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Scan
2N3700 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan
2N3700 Central Semiconductor NPN METAL CAN Transistors Scan
2N3700 Continental Device India Semiconductor Device Data Book 1996 Scan
2N3700 Crimson Semiconductor Transistor Selection Guide Scan
2N3700 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N3700 Fairchild Semiconductor NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO18 / Vceo=80 / Ic=1 / Hfe=- / fT(Hz)=100M / Pwr(W)=0.5 Scan
2N3700 General Diode Transistor Selection Guide Scan
2N3700 General Transistor Small Signal Transistor Selection Guide Scan
2N3700 Micro Electronics Semiconductor Device Data Book Scan
Showing first 20 results.

2N3700

Catalog Datasheet MFG & Type PDF Document Tags

2N3700

Abstract: 2N3019 v EBO 2N3019 2N3020 80 140 7.0 1.0 0.8 4.6 5.0 28.6 2N3700 80 140 7.0 1.0 0.5 2.85 1.8 10.6 U n it , perating and Storage Junction Tem perature Range - 6 5 to +200 2N3700* CASE 22 03, STYLE 1 TO-18 (TO , al Resistance, Junction to Case S ym bol RfcJA R«JC 2N3019 2N3020 217 35 2N3700 350 97 U n it T 'W JC W u 1 GENERAL TRANSISTORS NPN SILICON 2 N 3 0 1 9 and 2N3700 are M o to ro la designated , C urrent Gain {IC = 0.1 m Adc, V c e ~ 10 Vdc) hFE 2N3700, 2N3019 2N3020 2N3700, 2N3019 2N3020
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OCR Scan
2N3019 MOTOROLA motorola 2N3019 2N370

2n3019

Abstract: 2n3700 79-04, STYLE 1 TO-39 (TO-205AD) PD PD ^ J ' ^stg 0.8 4.6 5.0 28.6 65 to 2 B ase 2N3700* CASE 22-03, STYLE 1 TO-18 (TO-206AA) ,. , GENERAL TRANSISTORS NPN SILICON 2N 3019 and 2N3700 are M , 2N3700, 2N3019 2N3020 2N3700, 2N 3019 2N3020 2N3700, 2N3019 2N3020 -5 5 X K 1 J 2N3700, 2N3019 2N3700 , - 2N3020 2N3019, 2N3700 400 Motorola S m a ll-S ign a l Transistors, FETs and Diodes Device Data 3 -3 3 2N3019 2N3020 2N3700 ELECTRICAL CHARACTERISTICS (c ontinue d) (T ^ = 25°C unless o
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OCR Scan

2n3700

Abstract: 2N3019 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range 1) 2 , types 2N3057A, 2N3700, & 2N3700UB for TC +250C. Characteristics Symbol Min. Max. Unit ELECTRICAL , , 2N3700, 2N3700UB JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. Unit , TC = 250C, 1 Cycle, t = 10 ms Test 1 2N3019, 2N3019S 2N3057A, 2N3700, 2N3700UB Test 2 2N3019, 2N3019S 2N3057A, 2N3700, 2N3700UB VCE = 10 Vdc IC = 500 mAdc IC = 180 mAdc VCE = 40 Vdc IC = 125 mAdc IC = 45 mAdc
New England Semiconductor
Original
2N3700 JAN JTX 2N3019S MIL-PRF-19500/391

2n3019

Abstract: 2N3700 2N3019S 2N3057A MAXIMUM RATINGS Ratings 2) 2N3700 2N3700S Symbol Collector-Emitter , +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 , 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB , , 2N3700, & 2N3700UB for TC +250C. 3 PIN SURFACE MOUNT* 2N3700UB *See appendix A for package outline , ) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN
Microsemi
Original
2n3019 equivalent 2n3019 transistor test 2N3700 TO-206AB

2N3700

Abstract: test 2N3700 2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN , 2N3700 2N3700 TO-18 Bag 1/7 2N3700 Electrical ratings 1 Electrical ratings , junction-case Thermal resistance junction-ambient _max _ max 2N3700 2 Electrical , 300 us, duty cycle 1 % 3/7 Package mechanical data 3 2N3700 Package mechanical data , trademark. 4/7 2N3700 Package mechanical data TO-18 MECHANICAL DATA mm DIM. MIN. A
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Original
JESD97

2N3700

Abstract: 2N3701 DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier , 2N3700 2N3701 140 80 7.0 1.0 500 1.8 UNITS V V V A mW W TJ,Tstg JA JC -65 to +200 , =10V, IC=500mA VCE=10V, IC=1.0A 2N3700 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 50 90 100 , 120 30 100 15 UNITS nA uA nA V V V V V V (Continue) R0 2N3700 and 2N3701 NPN
Central Semiconductor
Original
transistor 45 f 122

test 2N3700

Abstract: , visit our website http://www.microsemi.com. FEATURES · · JEDEC registered 2N3700. RHA level JAN , JANS_2N3700 RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 , other high-reliability applications. UB package (leaded) JANS_2N3700UB TO-39 (TO-205AD) (leaded , ) ©2012 Microsemi Corporation Page 1 of 7 JANS_2N3700 MECHANICAL and PACKAGING · · · · · CASE , Rads (Si) 2N3700 JEDEC type number Symbol f IB IE TA TC V CB V CE V EB SYMBOLS & DEFINITIONS
Microsemi
Original
T4-LDS-0263
Abstract: , visit our website http://www.microsemi.com. FEATURES · · JEDEC registered 2N3700. RHA level JAN , JANS_2N3700 RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 , other high-reliability applications. UB package (leaded) JANS_2N3700UB TO-39 (TO-205AD) (leaded , ) ©2012 Microsemi Corporation Page 1 of 7 JANS_2N3700 MECHANICAL and PACKAGING · · · · · CASE , Rads (Si) 2N3700 JEDEC type number Symbol f IB IE TA TC VCB VCE VEB SYMBOLS & DEFINITIONS Microsemi
Original

2N3053

Abstract: 2N3019 MAXIMUM RATINGS Rating Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VcEO 80 80 Vdc , Characteristic Symbol 2N3019 2N3020 2N3700 Unit Thermal Resistance, Junction to Ambient R0JA 217 350 T/W , -205AD) 3 Collector 1 Emitter 2N3700* CASE 22-03, STYLE 1 TO-18 (TO-206AA) 3 ' 2 " 1 GENERAL TRANSISTORS NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) â˜2N3019 and 2N3700 are Motorola , CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, Vce = 10 Vdc) 2N3700, 2N3019 2N3020 hFE 50 30 100 â'" Uc = 10 mAdc
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OCR Scan
2N3053 2N3053A motorola 2N3020 2N3053 motorola 336 motorola
Abstract: 2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN , 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 2N3700 , °C/W °C/W ro P 2N3700 2 Electrical characteristics Electrical characteristics , 2N3700 Package mechanical data 3 Package mechanical data In order to meet environmental , bs O 4/7 bs O 2N3700 Package mechanical data TO-18 MECHANICAL DATA mm DIM. MIN STMicroelectronics
Original

2N3019 and applications

Abstract: 2N3019S 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features · MIL-PRF-19500/391 , Continuous Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT Value , 1 2N3019S TO-18 CASE 206AA STYLE 1 2N3700 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 Thermal Resistance, Junction to Case 2N3019, 2N3019S
ON Semiconductor
Original
2N3019 and applications jantx2n3019 205AA 205AB JAN2N3019 JANTX2N3019 JANTXV2N3019 JAN2N3019S

2n3019 equivalent

Abstract: test 2N3700 2N3700 Qualified Levels: JAN, JANTX, JANTXV, and JANS Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 DESCRIPTION This 2N3700 NPN transistor , · · · · JEDEC registered 2N3700 number. JAN, JANTX, JANTXV and JANS qualifications are available per , . Lightweight. Low power. Military and other high-reliability applications. (surface mount) 2N3700UB TO , T4-LDS-0185-2, Rev. 1 (121563) ©2013 Microsemi Corporation Page 1 of 6 2N3700 MECHANICAL and
Microsemi
Original

2n3019

Abstract: 2N3700 , JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 , @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range QML DEVICES 2N3019, 2N3019S TO , 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C. 3) Derate linearly , Vdc Page 1 of 2 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES ELECTRICAL
New England Semiconductor
Original
2N3019S JAN 600C

2N3700UB

Abstract: 2n3019 equivalent per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JAN , 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp , 2N3057A; 2.85 mW/°C for type 2N3700; 6.6 mW/°C for type 2N3700UB for TA +25°C 2) Derate linearly 28.6 mW/°C for type 2N3019 and 2N3019S; 10.3 mW/°C for types 2N3057A, 2N3700 & 2N3700UB for TC +25°C. , , 2N3700, 2N3700UB IC = 180mAdc Test 2 VCE = 40Vdc 2N3019, 2N3019S IC = 125mAdc 2N3057A
Microsemi
Original
000-inch to-206aa T4-LDS-0185
Abstract: -19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV , = +25°C (1) 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 0.8 0.5 0.5 W 5.0 1.8 1.0 N/A -65 to +200 W , TC = +25°C (2) PT 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range , 2N3019S; 2.3 mW/°C for type 2N3057A; 2.85 mW/°C for type 2N3700; 6.6 mW/°C for type 2N3700UB for TA +25°C , AREA DC Tests TC = 25°C, 1cycle, t = 10ms Test 1 2N3019, 2N3019S 2N3057A, 2N3700, 2N3700UB Test 2 Microsemi
Original

2N3019

Abstract: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features â'¢ MILâ'PRFâ'19500/391 , Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT Operating and Storage Junction Temperature Range TJ, Tstg mW 800 500 W , Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 RqJA Thermal Resistance, Junction to Case 2N3019, 2N3019S 2N3700 RqJC 1 EMITTER TOâ'5 CASE 205AA STYLE 1 2N3019 TOâ
ON Semiconductor
Original
2N3019/D
Abstract: 2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN , 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 2N3700 , junction-ambient _max _ max 2N3700 2 Electrical characteristics Electrical characteristics , mechanical data 3 2N3700 Package mechanical data In order to meet environmental requirements, ST , : www.st.com 4/7 2N3700 Package mechanical data TO-18 MECHANICAL DATA mm inch DIM. MIN. A STMicroelectronics
Original

2N3019

Abstract: 2N3019S 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features · MIL-PRF-19500/391 , Continuous Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT Value , 1 2N3019S TO-18 CASE 206AA STYLE 1 2N3700 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 Thermal Resistance, Junction to Case 2N3019, 2N3019S
ON Semiconductor
Original
JANTX2N3019S JANTXV2N3019S

2N3019 MOTOROLA

Abstract: 2N3019 Boca Semiconductor Corp. MAXIMUM RATINGS Rating Symbol 2N3019 2N3020 2N3700 Unit , -6510 +200 °c THERMAL CHARACTERISTICS Characteristic Symbol 2N3019 2N3020 2N3700 Unit , 35 97 °C/W 2N3019* 2N3020 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 2 "1 2 Base â -à 2N3700 , CHARACTERISTICS 0a = 25 , DC Current Gain (ic = 0.1 mAdc, Vce = 10 Vdc) 2N3700, 2N3019 2N3020 h fe 50 30 100 â'" dC = 10 mAdc
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OCR Scan
2N301 2N3700 MOTOROLA 2N3019-2N3020

2N3019 motorola

Abstract: 2N3700 MOTOROLA COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS Rating 2N3019 2N3700 Unit VCEO 80 80 Vdc , ­205AD) °C 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol 2N3019 2N3700 Thermal Resistance, Junction to Ambient RqJA 217 350 °C/W RqJC 35 97 2N3700 CASE 22­03 , © Motorola, Inc. 1996 1 2N3019 2N3700 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Motorola
Original
MOTOROLA TO205AD

2N3700

Abstract: 2N3019S 2N3057A MAXIMUM RATINGS Ratings 2) 2N3700 2N3700S Symbol Collector-Emitter , +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 , * (TO-206AA) 2N3700 W TO-46* (TO-206AB) 2N3057A 0 C Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB , , 2N3700, & 2N3700UB for TC +250C. 3 PIN SURFACE MOUNT* 2N3700UB *See appendix A for package outline
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OCR Scan

2N3701

Abstract: 2N3700 2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN , 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 2N3700 , °C/W °C/W ro P 2N3700 2 Electrical characteristics Electrical characteristics , 2N3700 Package mechanical data 3 Package mechanical data In order to meet environmental , bs O 4/7 bs O 2N3700 Package mechanical data TO-18 MECHANICAL DATA mm DIM. MIN
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OCR Scan
IC 3700
Showing first 20 results.