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RG2012N-3571-B-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.125W, 3570ohm, 100V, 0.1% +/-Tol, 10ppm/Cel, Surface Mount, 0805, CHIP, HALOGEN FREE AND ROHS COMPLIANT visit Digikey Buy
RG2012N-3571-W-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 3570ohm, 150V, 0.05% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
RG2012N-3571-W-T1 Susumu Co Ltd Fixed Resistor, Metal Film, 0.125W, 3570ohm, 100V, 0.05% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
RG2012N-3571-D-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 3570ohm, 150V, 0.5% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy

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Part : RG2012N-3571-B-T5 Supplier : Susumu Manufacturer : Future Electronics Stock : - Best Price : $0.1810 Price Each : $0.1810
Part : 2N3571 Supplier : SSI Technologies Manufacturer : Bristol Electronics Stock : 51 Best Price : $1.8750 Price Each : $3.00
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2N3571 Datasheet

Part Manufacturer Description PDF Type
2N3571 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3571 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N3571 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N3571 Motorola Motorola Semiconductor Datasheet Library Scan
2N3571 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3571 N/A Semiconductor Master Cross Reference Guide Scan
2N3571 N/A Shortform Electronic Component Datasheets Scan
2N3571 N/A Shortform Transistor Datasheet Guide Scan
2N3571 N/A Vintage Transistor Datasheets Scan
2N3571 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3571 N/A Transistor Shortform Datasheet & Cross References Scan
2N3571 N/A Basic Transistor and Cross Reference Specification Scan
2N3571 N/A Shortform Transistor PDF Datasheet Scan
2N3571 SGS-Thomson Transistor Datasheet Scan
2N3571 SGS-Thomson Class A Low Noise Transistors for Small Signal Applications Scan
2N3571 Texas Instruments Supply Division Product Catalogue 1978/79 Scan
2N3571 Texas Instruments Discrete Devices 1978 Scan
2N3571 Texas Instruments Semiconductor and Components Data Book 1967/8 Scan
2N3571 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan
2N3571 Thomson-CSF Condensed Data Book 1977 Scan
Showing first 20 results.

2N3571

Catalog Datasheet MFG & Type PDF Document Tags

2N3571

Abstract: 2N4252 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" ZIXJO/^ HriN 1 \J ! ¿. 1 o i) 5 ¿.U JVV
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OCR Scan
BFT32 BFT33 BFT34 BFT35 BFT36 BFT37 2N4252 2N4253 2N3570 2N3571 NPN 2n918

2n3571

Abstract: 2N3570 TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: · · · description These transistors are ideally suited fo r such applications as , X S 0 12 · D A L L A S . T E X A S 75222 4-233 TY P ES 2N3570, 2N3571. 2N3572 N -P-N S ILIC O , itter Voltage (See N ote 1) 2N 3570 2N3571 30 V 25 V 15 V 15 V 2N3572 25 V 13 V Emitter-Base Voltage
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OCR Scan
Abstract: 2N3571 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original

2N3511

Abstract: 2N3440S 2N3467 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3680 2N3701 2N3702 2N3703 2N3704
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OCR Scan
B133167 2N3420 2N3421 2N3421LP 2N3425 2N3439

2N2857 Model

Abstract: 2N3570 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683 2N2857* 2N5179 2N5053 2N3572 Test Frequency (MHz) 60 60 60 60
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OCR Scan
2N2857 Model MA42020 MA42021 MA42022 MA42023 MA42024 MA42025

2N3571

Abstract: RF diodes T018 2N3571 25 15 50 20 200 5 - â'"
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OCR Scan
BFY90 2N2708 RF diodes T018 T072 Transistors 1000M 2N2102 2N4036

S-parameter 2N5179

Abstract: s-parameter 2N2857 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683
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OCR Scan
S-parameter 2N5179 s-parameter 2N2857 bipolar transistor s-parameter NPN transistor mhz s-parameter IS21EI2 IS22ER

FMT1061

Abstract: MD918A -72 10 2N3571 â'" â'" 15 1200 (0.85) 4.0 450 250 TO-72 11 2N3572 â'" 13 1000 (0.85) 6.0 450
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OCR Scan
FMT2090 2N5770 PN3563 PN918 FMT1061 FMT1061A MD918A se3002 fairchild to-106 Dual Transistors TO-78 fairchild to106 SE3002

2N3571

Abstract: 2N5651 Silicon Low Noise Bipola Transistors MODEL NUMBER 2N 2857 2N 3570 2N3571 2N 3572 2N 3683 2N 3839 2N 38 80 . 2N 3953 2N5031 2N 5032 2N5053 2N5054 2N 51 79 2N5651 2N 5662 2N6618 2N 6665 MA42001 M A 42 00 2 . M A42003 M A42004 MA42005 M A 42 00 6 . M A42008 M A 42 00 9 . . M A 4 2 0 1 0-510 M A 4 2 0 1 0-509 . . M A 4 2 0 1 1-309 . M A 4 2 0 1 1-310 M A42012 M A42014 M A42015 . M A 42 01 6 M A42020
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OCR Scan
MA42141 A42022 A42024 MA42051 A42052 A42056 A42121-508

High frequency transistors

Abstract: RF diodes - â'"
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OCR Scan
High frequency transistors ZT92 ZT91 ZT93

2N4252

Abstract: pnp hfe 70 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
BFT79 BFT69 pnp hfe 70 048J bc143 BFT80 BFT70 BFT81 BFT71

2N3055

Abstract: 2N3055H 2N3439 2N3440 2N3441 2N3571 2N3583 2N3584 2N3585 2N3637 2N36S0 2N3713 2N3715 2N3716 2N3716S 2N3725
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OCR Scan
U3158 2N2891 2N3055 BDY25C BSW68A BUV26 2N3055H bu103a bu102 TRANSISTOR 2N1890 2N1893 2N2060 2N2102LL 2N2192

2N372A

Abstract: 2N3680 4ÃE D â  Ã1331Ã7 QGOQMBb 02e) â  SMLB BI-POLAR TRANSISTORS (CECC AND HIGH REL) & HIGH ENERGY Typs Number Rei Code Pol Package Vceo le (cont) Hfe @ Vce/lc fr Pd 2N3501 HR NPN T039 150 0.3 100-300 10/0.15 150M 5 2N3506 HE NPN T039 60 3 A0- -200 2/1.5 60M 1 2N3507 HR NPN T039 80 3 30- â 150 2/1.5 60M 1 2N3508 HR NPN T046 20 0.5 A0- -160 l/10m 500M O.A 2N3509 HR NPN T0A6 20 0.5 100-200 l/10m 500M O.A 2N3511 HR NPN T052 40 0.5 15min 1/lm 0.36 2N3571 REQ NPN T072 15 50m 20min 6/5m 1.2G
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OCR Scan
AO-200 2N372A 2N2979DCSM 2N3809 150M T046 2N3734 2N363A 2N3635 2N3636 2N3665 2N3676

BF225

Abstract: 2n3984 1000 Mc/s Amplifiers 2N3571 T072 PE 25 15 3 005 0-20 5 20 200 5 1200 â'" â'" â'" N.F.
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OCR Scan
2N915 2N916 2N2865 2S733 2N3983 TI407 BF225 2n3984 2N2539 2N4255 TIS37 TI-407 2S102 2S103 2S104

BF178

Abstract: BF177 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
BF178 BFQ36 BC325 BF177 bf179 2N2219 2N2905 BFT60 BF179 8FT57 BFT58 BFT59

2N3563

Abstract: BF163 ) 7.0 1000 250 TO-72 10 2N3571 â'" â'" 15 1200 (0.85) 4.0 450 250 TO-72 11 2N3572 â'" 13 1000
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OCR Scan
BF159 BF163 PE5025 FTR118 BF167 PE5030B 2N3563 se5020 Fairchild 2N2857

BF480

Abstract: Avantek S BFR92R BFR92R BFR92R ~~~~;71 65 2N3572 2N3571 2SC3841 2SC3841 S01309 S01309 BFS17AR MRF904 70
American Microsemiconductor
Original
BF480 Avantek S 2SC988 R950 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597

2N2708

Abstract: Ferranti ZT84 1000M 0 -75 6 60mW 1000 T018 2N3571 25 15 50 20 200 5 - â'"
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OCR Scan
ZT189 ZT211 Ferranti ZT84 ferranti 2N2907a ZT86 ZT88 BCY65E BCY77 2N2484 ZT210

C495 transistor

Abstract: c735 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
C495 transistor c735 c644 2N1893 equivalent C735 O 2N2222 hfe BS9300 2N2221 2N2906- 2N2221A- 2N2906A- 2N2222A

2N290

Abstract: bc143 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
2N290 F1-36 2N3053 equivalent 2N4037 equivalent F13S BS9365 F112 BS9365 BS93G5 BFT61 BFT62 BFI79 BCW34

2N3571

Abstract: 2N3572 TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: · · · description These transistors are ideally suited fo r such applications as , itter Voltage (See N ote 1) 2N 3570 2N3571 30 V 25 V 15 V 15 V 2N3572 25 V 13 V Emitter-Base Voltage , X S 0 12 · D A L L A S . T E X A S 75222 4-233 TY P ES 2N3570, 2N3571. 2N3572 N -P-N S ILIC O
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OCR Scan
2n 3570 3571 3572 3570

3570 1301

Abstract: BFP92 2N3440S 2N3467 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3680 2N3701 2N3702 2N3703 2N3704
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OCR Scan
BFT50 BFQ22 BFP92 BFQ63 3570 1301 SD1309 CB-233

4392

Abstract: 4392 ic equivalent T018 2N3571 25 15 50 20 200 5 - â'"
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OCR Scan
4392 4392 ic equivalent TE4392 canal 2N4393 4392 a ic CB-145 A2N918

npn transistors,pnp transistors

Abstract: J.BC211 - â'"
-
OCR Scan
BC211 npn transistors,pnp transistors J.BC211 J 2N918 transistor amplifier VHF/UHF

SO3572R

Abstract: transistors BFW30 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683 2N2857* 2N5179 2N5053 2N3572 Test Frequency (MHz) 60 60 60 60
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OCR Scan
BFW30 SO3572R transistors BFW30 BFR 450 SO3570 BFR 50 G1 BL CB-166

3570 1301

Abstract: MRF245 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683
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OCR Scan
MRF245 ad 40282 PT8828 2N4932 BLX66 CM45-12A
Showing first 20 results.