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RG2012N-3570-W-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 357ohm, 150V, 0.05% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
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Part : 2N3570 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 907 Best Price : - Price Each : -
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2N3570 Datasheet

Part Manufacturer Description PDF Type
2N3570 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original
2N3570 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3570 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N3570 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N3570 Motorola Motorola Semiconductor Datasheet Library Scan
2N3570 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3570 N/A Semiconductor Master Cross Reference Guide Scan
2N3570 N/A Shortform Electronic Component Datasheets Scan
2N3570 N/A Shortform Transistor Datasheet Guide Scan
2N3570 N/A Vintage Transistor Datasheets Scan
2N3570 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3570 N/A Transistor Shortform Datasheet & Cross References Scan
2N3570 N/A Basic Transistor and Cross Reference Specification Scan
2N3570 N/A Shortform Transistor PDF Datasheet Scan
2N3570 N/A Short Form Datasheet and Cross Reference Data Scan
2N3570 N/A Transistor Replacements Scan
2N3570 SGS-Thomson Transistor Datasheet Scan
2N3570 SGS-Thomson Class A Low Noise Transistors for Small Signal Applications Scan
2N3570 Texas Instruments Supply Division Product Catalogue 1978/79 Scan
2N3570 Texas Instruments Discrete Devices 1978 Scan
Showing first 20 results.

2N3570

Catalog Datasheet MFG & Type PDF Document Tags

2n3570

Abstract: Transistor D 798 2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 500 C/W O O O O O 1 = EMITTER 3 = COLLECTOR O CHARACTERISTICS SYMBOL 2 = BASE 4 = CASE NONE O TC = 25 C TEST CONDITIONS
Advanced Semiconductor
Original
Transistor D 798

2N3571

Abstract: 2N4253 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz
-
OCR Scan
BFT32 BFT33 BFT34 BFT35 BFT36 BFT37 2N3571 2N4253 2N3571 NPN 2N4252 2n918
Abstract: 2N3570 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original

2n3571

Abstract: 2N3570 TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: · · · description These transistors are ideally suited fo r such applications as am plifiers, oscillators, and mixers. The guaranteed m inim um gain-bandwidth products range fro m 1 , X S 0 12 · D A L L A S . T E X A S 75222 4-233 TY P ES 2N3570, 2N3571. 2N3572 N -P-N S ILIC O
-
OCR Scan

2N3571

Abstract: RF diodes 700 2
-
OCR Scan
BFY90 2N2708 RF diodes T018 T072 Transistors 1000M 2N2102 2N4036

High frequency transistors

Abstract: RF diodes 200 T072 2N2708 35 20 â'" 30 200 2 700 2
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OCR Scan
High frequency transistors ZT92 ZT91 ZT93

S-parameter 2N5179

Abstract: s-parameter 2N2857 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953 2N5032 2N3880 2N3839 2N3571 2N5054 2N3683
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OCR Scan
S-parameter 2N5179 s-parameter 2N2857 bipolar transistor s-parameter NPN transistor mhz s-parameter MA42020 2N2857 MA42021 MA42022 MA42023 2N5179

2N2857 Model

Abstract: 2N3570 ' Number MA42020 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953
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OCR Scan
2N2857 Model 2N5053

2N4252

Abstract: pnp hfe 70 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
BFT79 BFT69 pnp hfe 70 048J bc143 BFT80 BFT70 BFT81 BFT71

BF225

Abstract: 2n3984 400 â'" â'" â'" A.G.C. DEVICE NPN UHF 2N3570 TQ72 PE 30 15 3 005 0-20 5 20 150 5 1500 N.F.
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OCR Scan
2N915 2N916 2N2865 2S733 2N3983 TI407 BF225 2n3984 2N2539 2N4255 TIS37 TI-407 2S102 2S103 2S104

BF178

Abstract: BF177 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
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OCR Scan
BF178 BFQ36 BC325 BF177 bf179 2N2219 2N2905 BFT60 BF179 8FT57 BFT58 BFT59

BF480

Abstract: Avantek S 2SC2806 ME3001 ME3002 2N6304 BFXB9 2N3570 2N50S4 2SC3137 2N2857 2SC2353 2SC2353 S01303 S~1303 ~~g~~g5
American Microsemiconductor
Original
BF480 Avantek S 2SC988 R950 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597

2N2708

Abstract: Ferranti ZT84 2N2708 35 20 â'" 30 200 2 700 2
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OCR Scan
ZT189 ZT211 Ferranti ZT84 ferranti 2N2907a ZT86 ZT88 BCY65E BCY77 2N2484 ZT210

C495 transistor

Abstract: c735 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
-
OCR Scan
C495 transistor c735 c644 2N1893 equivalent C735 O 2N2222 hfe BS9300 2N2221 2N2906- 2N2221A- 2N2906A- 2N2222A

2N290

Abstract: bc143 Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
-
OCR Scan
2N290 F1-36 2N3053 equivalent 2N4037 equivalent F13S BS9365 F112 BS9365 BS93G5 BFT61 BFT62 BFI79 BCW34

N2222

Abstract: 2N222A -72 T3AII 2N3570 30 15 3 0 200 20 150 7 0» 0 -75 â'". 60* 1500 TO-18 T3AII 2N3571 25 15 3 0 200 20 200
-
OCR Scan
BFS59 BFS60 BFS61 BFX84 BFY50 BFY51 N2222 2N222A 2N222-A 2N222 Scans-00109883 BFS96-98

C495 transistor

Abstract: BF194 . f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output
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OCR Scan
BF594 BF194 BF595 BF195 BF597 BF197 2N4996 BF194 equivalent bf357

BFQ35

Abstract: F13S Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
-
OCR Scan
BFQ35 BC177 pnp transistor transistor bc303 transistor t05 2n3440 equivalent bc304 equivalent BCW35 SS9365F136 BS9365F136 BC177 BC179 BF257

2N3609

Abstract: 2N3633 2N3569 Carter Semi CSR Indus Horizon PPC Product Raytheon Co SemiconTech 2N3570 Texas Instr 2N3571 Texas
Space Power Electronics
Original
2SC1330 2N3609 2N3633 2N3520 transitron 2N3618 motorola RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171

C736

Abstract: C495 transistor Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
-
OCR Scan
C736 bc303 equivalent 2N2222A 026 bc143 equivalent 2N2905A T018 BFY52 equivalent 2N2907A 2N2222 2N2907 2N2218 8S9300 2N2219

2N3571

Abstract: 2N3572 TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: · · · description These transistors are ideally suited fo r such applications as am plifiers, oscillators, and mixers. The guaranteed m inim um gain-bandwidth products range fro m 1 , X S 0 12 · D A L L A S . T E X A S 75222 4-233 TY P ES 2N3570, 2N3571. 2N3572 N -P-N S ILIC O
-
OCR Scan
2n 3570 3571 3572 3570

3570 1301

Abstract: BFP92 700 2
-
OCR Scan
BFT50 BFQ22 BFP92 BFQ63 3570 1301 SD1309 CB-233

npn transistors,pnp transistors

Abstract: J.BC211 400 â'" â'" â'" A.G.C. DEVICE NPN UHF 2N3570 TQ72 PE 30 15 3 005 0-20 5 20 150 5 1500 N.F.
-
OCR Scan
BC211 npn transistors,pnp transistors J.BC211 J 2N918 transistor amplifier VHF/UHF

3570 1301

Abstract: MRF245 ' Number MA42020 MA42021 MA42022 MA42023 MA42024 MA42025 MA42026 MA42027 MA42028 2N5031 2N3570 2N3953
-
OCR Scan
MRF245 ad 40282 PT8828 2N4932 BLX66 CM45-12A

4392

Abstract: 4392 ic equivalent Metal Can o. Case Outlines Collector i 4-95J0 0-76 0-480 -1 2-7h min Dimensions in mm TO-18 High Frequency Transistors >â'¢ Maximum ratin as Device re BV BV BV hFE1 * NF fT VCE (sat) Type o a. Case CBO CEO EBO ICM Ic max. min. Ic Notes V V V mA mA min. max. f dB MHz mA V 2N3570 NPN T072 30 15 3 50 5 20 150 1000 7 1500 â'" â'" Oscillator power output typically 60mW at 1 GHz 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" 2N3572 NPN T072 25 13 3 50
-
OCR Scan
4392 4392 ic equivalent TE4392 canal 2N4393 4392 a ic CB-145 A2N918
Showing first 20 results.