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Part : 2N3553 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 7,333 Best Price : - Price Each : -
Part : 2N3553 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 2 Best Price : $11.20 Price Each : $11.20
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2N3553 Datasheet

Part Manufacturer Description PDF Type
2N3553 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original
2N3553 Philips Semiconductors Silicon Planar Epitaxial Overlay Transistor Original
2N3553 Philips Semiconductors NPN medium power transistor Original
2N3553 Philips Semiconductors Silicon Epitaxial Planar Overlay Transistors Original
2N3553 Semelab NPN Silicon High Frequency Transistor Original
2N3553 SunLED USA silicon transistors UHF/VHF power transistors Original
2N3553 Advani-Oerlikon Television / Video Devices Scan
2N3553 Continental Device India Metal Can and Epoxy Transistors Scan
2N3553 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N3553 Ferranti Semiconductors RF Diodes and Transistors 1977 Scan
2N3553 ITT Semiconductors Semiconductor Summary 1969 Scan
2N3553 Motorola Motorola Semiconductor Datasheet Library Scan
2N3553 Motorola The European Selection Data Book 1976 Scan
2N3553 Motorola European Master Selection Guide 1986 Scan
2N3553 Motorola Power Transistor Selection Guide Scan
2N3553 Mullard Quick Reference Guide 1977/78 Scan
2N3553 N/A Transistor Shortform Datasheet & Cross References Scan
2N3553 N/A Basic Transistor and Cross Reference Specification Scan
2N3553 N/A Basic Transistor and Cross Reference Specification Scan
2N3553 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

2N3553

Catalog Datasheet MFG & Type PDF Document Tags

2N3553

Abstract: 2N3375 41E D â  711Qö2b 00EÃ033 1 PHILIPS INTERNATIONAL IPHIN 2n3375 2n3553 2n3632 T-33~0? silicon epitaxial planar overlay transistors The 2N3553 is an n-p-n overlay transistor in a TO-39 metai , in T0-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 and the 2N3375 are , Collector-emitter voltaae 2N3553 2N3375 2N3632 -VBE = 1,5V VCEX max. 65 65 65 V Collector-emitter voltage , ) 2N3553 175 2,5 50 2N3375 100 7,5 < 1 >65 2N3375 400 > 3 1 >40 2N3632 175 > 13,5 3
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WE VQE 23 F 2N3553 NPN transistor 2n3553 philips TRANSISTORS 1968 philips 1968 philips 1969 T-33-09 7Z07891 7Z07979 7Z07978 2NI3375

2n3553

Abstract: 2N3375 File No. 386 â¡UCBZra Solid State Division RF Power Transistors 2N3375 2N3553 2N3632 40665 40666 RCA 2N3632, 2N3553, 2N3375, 40665 and40666 are epitaxial silicon n-p-n transistors of the , , frequency multipliers and oscillators. The 2N3375, 2N3553, and 40666 are especially intended for VHF-UHF , , Absolute-Maximum Values: 2N3553 2N3375 2N3632 40666 40665 COLLECTOR-TO-BASE VOLTAGE.VCB0 65 65 65 V , ( «4« 1 1 1 ®§ ^ r > > y I i ; 1 1 â'¢ H-1381 H 1307 2N3553 2N3632 2N3375 40666 40665
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2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375

2n3375

Abstract: 2n3375 transistor b'lE ] â  > bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a , overlay transistors in TO-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 , . QUICK REFERENCE DATA 2N3553 Collector-emitter voltage - V BE = 1,5 V 2N3375 2N3632 V CEX , R.F. performance at V q E = 28 V type number f (MHz) P0 (W) Pi (W) 7) (%) 2N3553
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2n3375 transistor S3R31 7Z07905 7Z07892 7Z07896 7Z07893 7Z07899

2N3553

Abstract: 2N3553 equivalent %20in%20html%20needs%20conversion/2n3553/2N3553.htm (1 of 2) [8/31/01 2:47:52 PM] C B E 2N3553 Parameter Symbol Test , %20in%20html%20needs%20conversion/2n3553/2N3553.htm (2 of 2) [8/31/01 2:47:52 PM] - , 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver stages in VHF
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Original
2N3553 equivalent TO39 Package 7w RF POWER TRANSISTOR NPN RF POWER TRANSISTOR NPN common emitter amplifier npn power amplifier circuit 175MH 3553/2N3553 100MH

PT8811

Abstract: PT8740 CD1616 2N5945 MM8003 SD1006 MSC82003 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M , -1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 , 2N6166 SD1019-5 BLX68 2N5946 DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 , J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61 2N4427 J03040 SD 1488
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MM1669 PT8811 PT8828 2N6095 PT9383 BFS51 PT8740 transistor pt4544 RF Transistor S10-12 BAM20 B25-12 2N6082 2N6084 MSC2304 TH2304

2N3553

Abstract: 2N3375 b*îE D â  bbS3T31 â¡QEtî7bb 3Tb N AMER PHILIPS/DISCRETE I I â  APX A 2N3375 2N3553 2N3632 SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO , transistors in T0-60 metal envelopes with the electrodes insulated from the studs. The 2N3553 and the 2N3375 , DATA Collector-emitter voltage -VBE = 1,5 V 2N3553 2N3375 2N3632 VCEX max. 65 65 65 V , MHz MHz R.F. performance at Vqe = 28 V type number f (MHz) P0 (W) Pi (W) T) (%) 2N3553 175 2,5
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ic 2n35 data inductor 4312 020 36640 Transistor 2n3375 4312 020 36640 ic 2n35 2N35 S3T31 7Z07895 N3632

mrf245

Abstract: SD1416 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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2N4072 BLY94 2N4932 SD1416 PT8710 SD1238 mrf245 PT9788 CB-305 CB-298 CB-2901 CB-293 CB-308 CB-297

SD1076

Abstract: MRF245 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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SD1076 2n918 PT9780 MRF510 2N5711 CM45-12A PT8809 SD1134 2N5689 SD1014 BAM40 2N5643

2N918

Abstract: SD1076 CD1616 2N5945 MM8003 SD1006 MSC82003 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M , -1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 , 2N6166 SD1019-5 BLX68 2N5946 DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 , J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61 2N4427 J03040 SD 1488
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sd-1076 s8012 transistor BLY60 2N3563 BFW46 B25-28 SD1015 MSC2307 TH2307 PT8810 SD1135

2N3553

Abstract: TRANSISTOR 2n3553 DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor , transistor 2N3553 APPLICATIONS DESCRIPTION · The 2N3553 is intended for use in VHF and UHF , epitaxial overlay transistor 2N3553 LIMITING VALUES In accordance with the Absolute Maximum Rating , Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor 2N3553 , . Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor 2N3553
Philips Semiconductors
Original
MGC929 Planar choke MBB199 MSA241

MRF245

Abstract: CM45-12A TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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SD1451 BLY22 J03055 S100-28 BLY34 SD1256 XO-72 PT5749 N5636 2N4040 2N5636 BLY90

MRF245

Abstract: SD1076 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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2N5944 BLX66 lt2001 MM1681 TP1045 SD1278 MM1550 MRF618 SD1429-3 PT5750 2N4041 2N5635

PT8740

Abstract: PT8811 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD 1244 2N5714 2 N5643 BFW98 2N5944 CD 1802 , PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD , TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421 MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 , 2N3927 BLY60 2N3632 J03030 SD 1488 MRF502 SD 1300 PT5656 SD 1202 2 N3294 SD1310 40290 2N3553 BLY61
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2N5913 BM70-12 replace for 2N918 THOMSON-CSF PRODUCTS transistor c282 BAM80 B30-12 MM1680 N6080 MSC4000 TH4200

PCR 406 J transistor

Abstract: transistor PCR 406 HM data 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER `his smclficctim is mcfhtory for , . Pj- P~ TA * 25"c Tc * 25° C nw VCBO w 2N3375, 2N4440 2.611 2N3553 , =100mAdc 2N3375 2N4440 Ic. 250 mAdc IIC. 50mAck 2N3553 1.0 -6S to .200 + 200 -65 to -200 .200 , . ~ad material, for type 2N3553 only, shafl be Kovaz or tiloy 52 and [inal finish shall be gold-plated , .- 200 tAdc -. -. . . -. I -. 2N4440 Power output 2N3553 Collector
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PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j W0/341A

MRF245

Abstract: PT8828 TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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J0303 CM-501 2N6096 2N6368 j04070 1546 transistor cross reference CB-403 CB-410 CB-303 CB-4111 CB-306 CB-407

3570 1301

Abstract: MRF245 2n3553 cd1617 2n5946 m m8006 sd 1300 msc82005 th2005 pt9734 sd 1244 2n5714 2 n5643 bfw98 2n5944 cd 1802 , pt9795 sd1229-1 2n5835 sd1300 bfy44 2n3553 cm25-12 sd1422 mm8011 2n4428 pt2677b sd1012 pt9795a sd1229 2n5841 sd1345 bfy70 2n3553 cm30-12a sd1488 mm8012 sd 1005-4 pt3500 2n3553 pt9796 sd 1290-3 2n5842 sd , tpv596 th596 2n6197 2n3553 blx96 th596 dm30-12ba sd1421 mrf238 sd1272 pt4556 sd1018 tpv597 th597 2n6198 , 2n3927 bly60 2n3632 j03030 sd 1488 mrf502 sd 1300 pt5656 sd 1202 2 n3294 sd1310 40290 2n3553 bly61
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3570 1301 ad 40282 BLY93A D128 transistor 1521e J02015A BFT50 BFQ22 CB-233 BFP92 BFQ63

2N3553

Abstract: 2N3553 NPN 2N3553 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) The 2N3553 is designed for amplifier and , ://www.semelab.co.uk Document Number 5619 Issue 1 2N3553 ELECTRICAL CHARACTERISTICS (TA = 25°C unless
Semelab
Original
high gain low capacitance NPN transistor 2N3553 datasheet 205AD

9033 transistor

Abstract: PT8828 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD 1244 2N5714 2 , 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 SD 1080 , -12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421 MRF238
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9033 transistor BLW27 sd1315 THOMSON-CSF MICROWAVE TRANSISTORS 2N3563 REPLACEMENT transistor 2N3563 BLY91A 2N5641 MM1551 2N5637 MRF619 PT5751

BFY70

Abstract: CM45-12A TH2003 PT9733 SD1219 2N5713 2N5642 BFW47 2N3553 CD1617 2N5946 M M8006 SD 1300 MSC82005 TH2005 PT9734 SD , CM20-12A SD 1422 MM8010 2N4428 MSC83005 TH3005 PT9795 SD1229-1 2N5835 SD1300 BFY44 2N3553 CM25-12 SD1422 MM8011 2N4428 PT2677B SD1012 PT9795A SD1229 2N5841 SD1345 BFY70 2N3553 CM30-12A SD1488 MM8012 SD 1005-4 PT3500 2N3553 PT9796 SD 1290-3 2N5842 SD 1345 BFY90 SD1300 CM40-12 SD1488 MRA0913-2 SD1378 PT3501 , DM20-12BA SD1421 MRF237 SD1127 PT4544 SD1143 TPV596 TH596 2N6197 2N3553 BLX96 TH596 DM30-12BA SD1421
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THB598 PT4572A 2N3924 msc80264 2N5846 BLY92A MM1552 SD1019 MRF620 PT5788 SD1487

multi-emitter transistor

Abstract: 2NS553 , for UHF operation. Absolute Maximum Ratings (25°C except where noted) 2N3553 VCBO VCEO VCBV
New Jersey Semiconductor
Original
2NS553 multi-emitter transistor 400MC

2N3553

Abstract: 2N3375 ) 362-8500 TWX 510-661-7299 2N 3375 2N 3632 2N3553 2N 3733 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V , E R A T U R E ( T c ) = 2 5 ° C w (P o u x )_ W A T T S h 2N3553 POWER OUTPUT VS FREQUENCY , B TE E OUT Z l =50 O H M S IN = 50 O H M S 2N3632 (175 mHz OPERATION) 2N3553 (175 mHz OPERATION , mHz OPERATION) + VC C = 2 8 V < 2STUB TUNER STUB TUN ER BIAS Z, =50 O HM S 2N3553 c -2 5 "i
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2N3733 2N 3375 7T2TE37

t 3866 power transistor

Abstract: transistor 571 2N3553 SILICON NPN VHF POWER TRANSISTOR _571 HIGH GAIN DRIVER FOR 28 V FM APPLICATIONS â'¢ 2.5 Wat 175 MHz â'¢ Minimum Gain 10 dB mechanical data t -T- â'"6,6â'" -12,7 mm- J T I , Instruments 2- 2N3553 SILICON NPN VHF POWER TRANSISTOR electrical characteristics at 25 °C case , ^300 fls. 2-306 Texas Instruments 2N3553 SILICON NPN VHF POWER TRANSISTOR TYPICAL CHARACTERISTICS , FIGURE 3 Texas Instruments 2-307 2N3553 SILICON NPN VHF POWER TRANSISTOR ABSOLUTE MAXIMUM AREA OF
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t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor t 3866 T0-60CE 25PEP 20PEP 40PEP 80PEP
Showing first 20 results.