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2N3507AU4 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, U4 3 PIN visit Digikey Buy
JAN2N3507 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN visit Digikey Buy
JANTX2N3507A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTX2N3507AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTXV2N3507A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTXV2N3507AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy

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Part : JAN2N3507 Supplier : Microsemi Manufacturer : Future Electronics Stock : - Best Price : $11.90 Price Each : $12.57
Part : JANTX2N3507 Supplier : Microsemi Manufacturer : Future Electronics Stock : 100 Best Price : $13.76 Price Each : $14.57
Part : JAN2N3507 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : JAN2N3507 Supplier : Microsemi Manufacturer : Bristol Electronics Stock : 1 Best Price : - Price Each : -
Part : JANTX2N3507 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 10 Best Price : $14.40 Price Each : $14.40
Part : JANTXV2N3507 Supplier : - Manufacturer : basicEparts Stock : 9 Best Price : - Price Each : -
Part : JANTX2N3507MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 111 Best Price : - Price Each : -
Part : JANTXV2N3507L Supplier : Microsemi Manufacturer : NexGen Digital Stock : 341 Best Price : - Price Each : -
Part : JANTXV2N3507MSC Supplier : Microsemi Manufacturer : NexGen Digital Stock : 1 Best Price : - Price Each : -
Part : JANTX2N3507 Supplier : - Manufacturer : Chip One Exchange Stock : 18 Best Price : - Price Each : -
Part : 2N3507 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 34 Best Price : $173.1600 Price Each : $173.1600
Part : 2N3507A Supplier : Microsemi Manufacturer : Chip1Stop Stock : 201 Best Price : $97.1100 Price Each : $128.7000
Part : JANTX2N3507 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 1,028 Best Price : $100.3900 Price Each : $126.3600
Part : JANTXV2N3507 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 49 Best Price : $167.3100 Price Each : $167.3100
Part : JANTX2N3507 Supplier : Microsemi Manufacturer : New Advantage Stock : 80 Best Price : $16.19 Price Each : $17.15
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2N3507 Datasheet

Part Manufacturer Description PDF Type
2N3507 Defense Supply Center Columbus NPN Silicon Switching Transistor Original
2N3507 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3507 Semico Type 2N3507 Geometry 1506 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3507 Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3507 Semico TRANS GP BJT NPN 50V 3A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=50 / Ic=3 / Hfe=30/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3507 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N3507 API Electronics Short form transistor data Scan
2N3507 API Electronics 5 Amp NPN Transistors Scan
2N3507 API Electronics Short form transistor data Scan
2N3507 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan
2N3507 Motorola Motorola Semiconductor Datasheet Library Scan
2N3507 Motorola Power Transistor Selection Guide Scan
2N3507 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N3507 N/A Semiconductor Master Cross Reference Guide Scan
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2N3507 N/A Vintage Transistor Datasheets Scan
2N3507 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3507 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3507 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3507 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

2N3507

Catalog Datasheet MFG & Type PDF Document Tags

2N3506 MOTOROLA

Abstract: 2N3507 bol M ax 35 175 Unit aC/W Sym bol VCEO VCBO Veb o ic Pd pd 2N3S06 40 60 2N3507 50 80 Unit Vdc Vdc Vdc Ade Watt m W /X Watts mW/°C °C 2 1 2N3506 2N3507 CASE 79-04, STYLE 1 TO-39 (TO , 100°C) 4.0 Vdc) 4.0 Vdc, Ta = 1008 C) 2N3506 2N3507 'B L 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 V , 2N3507 2N35Û6 2N3507 2N3506 2N3507 2N3506 2N3507 (Ic - 500 mAdc, Iß = 50 mAdc) dC = 1*5 Ade, Ib = 150
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2N3506 MOTOROLA 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F 2N3S07

2N3507 equivalent

Abstract: 2N3506 2N3506 thru 2N3507A NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507A series. RoHS compliant versions , -205AD) Package Also available in: TO-5 package (long-leaded) 2N3506L ­ 2N3507AL APPLICATIONS / BENEFITS · , ) 2N3506U4 ­ 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage
Microsemi
Original
2N3507 equivalent T4-LDS-0016

2N3507

Abstract: 2N3506A 2N3507, 2N3507A, 2N3507L, 2N3507AL, 2N3507U4 2N3507AU4 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4 2N3506AU4 2N3507, 2N3507A, 2N3507L, 2N3507AL, 2N3507U4 2N3507AU4 V dc Min Max 40 , , 2N3507L, 2N3507A, 2N3507AL, 2N3507U4, AND 2N3507AU4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP , derating for 2N3506, 2N3506A, 2N3506L, 2N3506AL,2N3507, 2N3507A, 2N3507L, and 2N3507AL. 20 MIL-PRF , TJ and TSTG W 2N3506, 2N3506A, 2N3506L, 2N3506AL 2N3506U4 2N3507, 2N3507A, 2N3507L, 2N3507AL
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Original
MIL-PRF-19500/349H MIL-PRF-19500/349G MIL-PRF-19500 JANHCA2N3507 JANHCA2N3506 JANKCA2N35306

2n3507

Abstract: 2N3506 DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose , ,Tstg JA JC 2N3506 60 ` 40 5.0 3.0 1.0 5.0 2N3507 80 50 UNITS V V V A W W °C °C/W °C/W -65 , 2N3507 MIN MAX UNITS µA µA µA µA V V V V V V V V V IC=100µA IC=10mA IE=10µA IC=500mA, IB=50mA IC , (Continued) R1 2N3506 / 2N3507 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TA
Central Semiconductor
Original

2N3507

Abstract: 2N3507 Chip: 5.0V; 3.0A; geometry 1506; polarity NPN 8.75 Transistors. http://store.americanmicrosemiconductor.com/2n3507.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3507 2N3507 C hip: 5 .0 V; 3 .0 A; geo m et ry 1 5 0 6 ; po larit y NPN Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to , Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3507 $ 10.94 $ 8.75 $ 2.19
American Microsemiconductor
Original

2N3507

Abstract: 2N3506 per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 , ) Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V(BR)CEO 40 50 2N3506 2N3507 , 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC =
Microsemi
Original
072040 2N3507 JANTX
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 2N3507 Availability Buy 2N3507 at our online store ! 2N3507 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3507 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 50 V American Microsemiconductor
Original

2N3506

Abstract: 2N3506A , SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, JAN, JANTX, JANTXV , , NPN, SILICON, SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL , ) PT (3) TA = +25°C VCBO VCEO VEBO TC = +25°C 2N3506 2N3506A 2N3507 2N3507A 2N3506 2N3506A IC TJ and TSTG RJA °C -65 to +200 °C/W 2N3507 2N3507A W W , 2N3506 2N3507 2N3506A 2N3507A 2N3506A 2N3507A |hfe| Cobo IC = 1.5 A dc IB = 150 mA dc f =
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/349E MIL-PRF-19500/349D T0-39

2n3507

Abstract: p semcofl ¿ 8888 88888 |M iw Bffi .rfHHHHM iHB HHHHh . m sssBP itittn n n hh h k n n h h h -. >>iftBh , °C Operating Junction Temperature Storage Temperature & semicofl Data Sheet No. 2N3507 s S , S e M IC
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2N3507

Abstract: Data Sheet No. 2N3507 Generic Part Number: 2N3507 Type 2N3507 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: · General-purpose silicon transistor for switching and amplifier applications. · Housed in TO-39 case. · Also available in chip form using the 1506 chip geometry. · The Min and Max limits shown are per MIL-PRF , o C Data Sheet No. 2N3507 Electrical Characteristics o TC = 25 C unless otherwise
Semicoa Semiconductors
Original

2N3507

Abstract: 2N3506 SEMICONDUCTOR! TECHNICAL DATA 2N3506. 2N3507. NPN Silicon Small-Signal Transistors designed , 5.0 3.0 2N3507 50 80 Unit Vdc Vdc Vdc Ade Watts m W /'C Watts W /C C ·c PT (§> Ta = 25 , = 5 0 v d c ) (ic » 0.5 Ade. vce V(BR)CEO 2N3506 2N3507 V(BR)CBO 2N3506 2N3507 V(BR)EBO 40 50 , 250 200 = 1 0 v d c - t a = _55 c ' 2N3507 (lc = 500 mAdc, Vc e = 1 0 vd c| (ic - 1 5 Ade, V c , !1) (IC -t.S A d c , Vc ^ e Symbol ICEX 2N3506 2N3507 »FE 2N3506 2N3507 Mm - Max 10 1.0 200 150
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2N350

1506

Abstract: 2N3507 Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and core driver applications. 2N3506, 2N3506L, 2N3507, 2N3507L Features: High current and high speed capability Mechanical Specifications Metallization Bonding Pad Size Top Backside
Semicoa Semiconductors
Original
1506 chip type geometry 22KA

2N3507 JAN

Abstract: 2N3507 2N3507 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3507J) · JANTX level (2N3507JX) · JANTXV level (2N3507JV) · JANS level (2N3507JS) · QCI to the applicable level · 100% die visual inspection , 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3507 Silicon NPN Transistor Data Sheet
Semicoa Semiconductors
Original
MIL-STD-750

2N3506

Abstract: 2N3507 MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for , ,VCE = 2.0 Vdc) (IC = 2.5 Adc, VCE = 3.0 Vdc) 50 40 30 25 25 35 30 25 20 17 2N3507 , 200 150 Min Max lc~ ~EB = 4.$~W{kCE = 40 V*) WEB =,~tdi~g$VCE = 60 V*) 2N3506 2N3507 DC Cu~~ln(l) Mdc - hFE (l&&%#A*, VCE= 2.0 Vdc) ,:. ;~ , ~,., `i> 2N3506 2N3507
Motorola
Original
2NW06 15-ADO 2N850WWD TM05AD 2NW07 150MA SMALL41GNALCHARACTERISTICS

2N3507

Abstract: 2N3507J 2N3507 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3507J) · JANTX level (2N3507JX) · JANTXV level (2N3507JV) · JANS level (2N3507JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD , www.SEMICOA.com Page 1 of 2 2N3507 Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS
Semicoa Semiconductors
Original
Abstract: 2N3507 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: â'¢ General purpose switching transistor â'¢ Low power â'¢ NPN silicon transistor â'¢ Screening and processing per MIL-PRF-19500 â'¢ JAN level (2N3507J) â'¢ JANTX level (2N3507JX) â'¢ JANTXV level (2N3507JV) â'¢ JANS level (2N3507JS) â'¢ QCI to the applicable level â'¢ 100% die visual , 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA Semicoa Semiconductors
Original
Abstract: 2N3507 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3507J) · JANTX level (2N3507JX) · JANTXV level (2N3507JV) · JANS level (2N3507JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request , Page 1 of 2 www.SEMICOA.com 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL Semicoa Semiconductors
Original
Abstract: 2N3507+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original
Abstract: 2N3507 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 · JAN level (2N3507J) · JANTX level (2N3507JX) · JANTXV level (2N3507JV) · JANS level (2N3507JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications · General , Page 1 of 2 www.SEMICOA.com 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL Semicoa Semiconductors
Original
Abstract: 2N3507+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)50 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)1.5 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq60M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2N3506

Abstract: General 5 ^ Sem iconductor » Industries, Inc. DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These devices are designed fo r use in h ig h -c u rren t, high-speed, s aturated s w itc hing and core d river applic a tio n s. T h e latest technologies are used to o ffe r th e highest degree o f r e lia b ility . J A N , J A N T X , & J A N T X V to M IL -S -1 9 5 0 0 / 3 4 9 are available. 2N3506 2N3507 N PN S I L IC O N S W IT C H I N G T R A N SIST O R S FEATURES · Fast Switching · Low
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