2N3506L MIL-PRF-19500 2N3506LJ 2N3506LJX 2N3506LJV 2N3506LJS MIL-STD-750

Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching

2N3506L 2N3506L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E · JAN level (2N3506LJ 2N3506LJ) · JANTX level (2N3506LJX 2N3506LJX) · JANTXV level (2N3506LJV 2N3506LJV) · JANS level (2N3506LJS 2N3506LJS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Features · · · · Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 MIL-PRF-19500/349 Benefits · Qualification Levels: JAN, JANTX, JANTXV and JANS · Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 40 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 3 A PT 1 5.71 5 28.6 RJA 175 W mW/°C W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. E PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3506L 2N3506L Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 60 Units Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 40 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 5 Volts Collector-Emitter Cutoff Current ICEX1 VCE = 40 Volts, VEB = 4 Volts 1 µA Collector-Emitter Cutoff Current ICEX2 VCE = 40 Volts, VEB = 4 Volts, TA = 150°C 1.5 mA Max 250 200 Units On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 VCEsat1 VCEsat2 VCEsat3 Test Conditions IC = 500 mA, VCE = 1 Volts IC = 1.5 A, VCE = 2 Volts IC = 2.5 A, VCE = 3 Volts IC = 3.0 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA Min 50 40 30 25 25 Min Typ 0.5 1.0 1.5 1.0 1.3 2.0 0.8 Volts Volts Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol Delay Time td Test Conditions VCE = 5 Volts, IC = 100 mA, f = 20 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 3 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IC = 1.5 A, IB1 = 150 mA Rise Time tr IC = 1.5 A, IB1 = 150 mA 30 ns Storage Time ts IC = 1.5 A, IB1=IB2 = 150 mA 55 ns Fall Time tf IC = 1.5 A, IB1=IB2 = 150 mA 35 ns |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 3 Max Units 15 40 pF 300 pF 15 ns Switching Characteristics Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2