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Part Manufacturer Description Datasheet BUY
JANTX2N3506AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JAN2N3506A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTX2N3506 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN visit Digikey Buy
JANTXV2N3506AL Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTXV2N3506A Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 visit Digikey Buy
JANTXV2N3506 Microsemi Corporation Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, SIMILAR TO TO-39, 3 PIN visit Digikey Buy

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Part : JANTX2N3506 Supplier : Microsemi Manufacturer : Bristol Electronics Stock : 23 Best Price : $13.80 Price Each : $13.80
Part : JANTX2N3506 Supplier : CCSX Manufacturer : Bristol Electronics Stock : 23 Best Price : $18.00 Price Each : $18.00
Part : 2N3506 Supplier : Motorola Manufacturer : basicEparts Stock : 1 Best Price : - Price Each : -
Part : JANTX2N3506 Supplier : Vishay Semiconductors Manufacturer : basicEparts Stock : 60 Best Price : - Price Each : -
Part : 2N3506JANTX Supplier : Microwave Semiconductor Manufacturer : ComSIT Stock : 48 Best Price : - Price Each : -
Part : 2N3506 Supplier : Signetics Manufacturer : Chip One Exchange Stock : 200 Best Price : - Price Each : -
Part : 2N3506 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 447 Best Price : $76.6400 Price Each : $104.4800
Part : 2N3506 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 16 Best Price : $140.4000 Price Each : $193.0500
Part : JANTX2N3506 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 1 Best Price : $170.8200 Price Each : $170.8200
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2N3506 Datasheet

Part Manufacturer Description PDF Type
2N3506 Defense Supply Center Columbus NPN Silicon Switching Transistor Original
2N3506 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3506 Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3506 Semico Type 2N3506 Geometry 1506 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original
2N3506 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N3506 API Electronics Short form transistor data Scan
2N3506 API Electronics 5 Amp NPN Transistors Scan
2N3506 API Electronics Short form transistor data Scan
2N3506 General Semiconductor Low Frequency Silicon Power Transistor (Also available in JAN & JANTX) Scan
2N3506 Motorola Motorola Semiconductor Datasheet Library Scan
2N3506 Motorola European Master Selection Guide 1986 Scan
2N3506 Motorola Power Transistor Selection Guide Scan
2N3506 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3506 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3506 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3506 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3506 N/A Transistor Shortform Datasheet & Cross References Scan
2N3506 N/A Basic Transistor and Cross Reference Specification Scan
2N3506 N/A Shortform Transistor PDF Datasheet Scan
2N3506 N/A Shortform Transistor PDF Datasheet Scan
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2N3506

Catalog Datasheet MFG & Type PDF Document Tags

2N3507 equivalent

Abstract: 2N3506 2N3506 thru 2N3507A NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507A series. RoHS compliant versions , -205AD) Package Also available in: TO-5 package (long-leaded) 2N3506L ­ 2N3507AL APPLICATIONS / BENEFITS · , ) 2N3506U4 ­ 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage
Microsemi
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2N3507 equivalent 2N3507 T4-LDS-0016

2N3507

Abstract: 2N3506 per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A , ) Parameters / Test Conditions Symbol 2N3506 2N3507 Unit Collector-Emitter Voltage VCEO 40 , ) Parameters / Test Conditions Symbol Min. 2N3506 2N3507 V(BR)CEO 40 50 2N3506 2N3507 , 500mAdc, VCE = 1Vdc 2N3506 2N3507 hFE 50 35 250 175 Forward-Current Transfer Ratio IC = 1.5Adc, VCE = 2Vdc 2N3506 2N3507 hFE 40 30 200 150 Forward-Current Transfer Ratio IC =
Microsemi
Original
2N3507L 072040 2N3507 JANTX

2N3506 MOTOROLA

Abstract: 2N3507 Vdc Vdc Vdc Ade Watt m W /X Watts mW/°C °C 2 1 2N3506 2N3507 CASE 79-04, STYLE 1 TO-39 (TO , 100°C) 4.0 Vdc) 4.0 Vdc, Ta = 1008 C) 2N3506 2N3507 'B L 2N3506 2N3507 2N3506 2N3507 2N3506 2N3507 V , c e = 3.0 Vdc) {Ic = 3.0 Ade, V c e = 5.0 Vdc) Collector-Emitter Saturation Voltaged) 2N3506 2N3507 2N35Û6 2N3507 2N3506 2N3507 2N3506 2N3507 (Ic - 500 mAdc, Iß = 50 mAdc) dC = 1*5 Ade, Ib = 150 , 00flb343 2N3506, 2N3S07 S | C j Sym bol M in - - - ELECTRICAL CHARACTERISTICS (continued) (T
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OCR Scan
2N3506 MOTOROLA 2N3507 JAN IN MOTOROLA 2N3507 JAN MHP-F 2N3S06

2N3506

Abstract: Data Sheet No. 2N3506 Generic Part Number: 2N3506 Type 2N3506 Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: · General-purpose silicon transistor for switching and amplifier applications. · Housed in TO-39 case. · Also available in chip form using the 1506 chip geometry. · The Min and Max limits shown are per MIL-PRF , +200 o C o C Data Sheet No. 2N3506 Electrical Characteristics TC = 25oC unless
Semicoa Semiconductors
Original

2n3507

Abstract: 2N3506 DATA SHEET 2N3506 2N3507 NPN SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed for general purpose , ,Tstg JA JC 2N3506 60 ` 40 5.0 3.0 1.0 5.0 2N3507 80 50 UNITS V V V A W W °C °C/W °C/W -65 , =100°C 60 40 5.0 0.5 1.0 1.5 1.0 1.4 2.0 80 50 5.0 0.5 1.0 1.5 1.0 1.4 2.0 2N3506 MIN MAX 1.0 150 1.0 150 , (Continued) R1 2N3506 / 2N3507 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CONTINUED (TA
Central Semiconductor
Original

2N3507

Abstract: 2N3506A , NPN, SILICON, SWITCHING, TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507 , 100 mA dc 100 kHz f 1 MHz 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4 2N3506AU4 , impedance graph (RJA) for 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507A, 2N3507L , TJ and TSTG W 2N3506, 2N3506A, 2N3506L, 2N3506AL 2N3506U4 2N3507, 2N3507A, 2N3507L, 2N3507AL , * FIGURE 4. Temperature-power derating for 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3507, 2N3507A
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Original
MIL-PRF-19500/349H MIL-PRF-19500/349G 2N3507U4 MIL-PRF-19500 JANHCA2N3507 JANHCA2N3506
Abstract: LivePerson l l l l Submit ¡ ¡ ¡ 2N3506 Availability Buy 2N3506 at our online store ! 2N3506 Information Cate gory » Transistors Class » Transistors; Bipolar; Si NPN Power Type » Transistors; Bipolar; Si NPN Power 2N3506 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 40 V American Microsemiconductor
Original

2N3507

Abstract: 2N3506 SEMICONDUCTOR! TECHNICAL DATA 2N3506. 2N3507. NPN Silicon Small-Signal Transistors designed , Emitter-Base Voltage Collector Current - Continuous Power Dissipation Symbol VCEO VCBO vebo 2N3506 40 60 , = 5 0 v d c ) (ic » 0.5 Ade. vce V(BR)CEO 2N3506 2N3507 V(BR)CBO 2N3506 2N3507 V(BR)EBO 40 50 60 00 >CEX 2N3506 tiAdc 1.0 1500 1.0 1500 hFE 2N3506 50 40 30 25 25 35 30 25 20 , !1) (IC -t.S A d c , Vc ^ e Symbol ICEX 2N3506 2N3507 »FE 2N3506 2N3507 Mm - Max 10 1.0 200 150
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OCR Scan
2N350

2N3506

Abstract: 2N3506A , SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, JAN, JANTX, JANTXV , Low-temperature operation Forward-current transfer ratio 2N3506, 2N3506L 2N3507, 2N3507L 2N3506A, 2N3506AL , , NPN, SILICON, SWITCHING TYPES 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL , ) PT (3) TA = +25°C VCBO VCEO VEBO TC = +25°C 2N3506 2N3506A 2N3507 2N3507A 2N3506 2N3506A IC TJ and TSTG RJA °C -65 to +200 °C/W 2N3507 2N3507A W W
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/349E MIL-PRF-19500/349D T0-39

2N3506

Abstract: 2N3506 Chip: 5.0V; geometry 1506; polarity NPN 12.34 Transistors Trans. http://store.americanmicrosemiconductor.com/2n3506.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N3506 2N3506 C hip: 5 .0 V; geo m et ry 1 5 0 6 ; po larit y NPN Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2 , Shipping FAQs Manufacturer Partnumber: List Price: Our Price: You Save: Americanmicrosemi 2N3506 $
American Microsemiconductor
Original

2N3506

Abstract: 2N3507 MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV , = 5.0 Vdc) (1c. 0.5Adc,VCE = 1.0 VdC,TA. +"C) hFE 2N3506 (Ic = 500 mAdc,VCE.1.0 V*) (1C= 1.5Adc , 200 150 Min Max lc~ ~EB = 4.$~W{kCE = 40 V*) WEB =,~tdi~g$VCE = 60 V*) 2N3506 2N3507 DC Cu~~ln(l) Mdc - hFE (l&&%#A*, VCE= 2.0 Vdc) ,:. ;~ , ~,., `i> 2N3506 2N3507 , Unit *do q MOTORO~ 2N3506 and 2NW07 SERIES PACWGE DIMENSIONS R i f0,36(0.014
Motorola
Original
2N3507JTX 2NW06 15-ADO 2N850WWD TM05AD 150MA SMALL41GNALCHARACTERISTICS

1506

Abstract: 2N3507 Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and core driver applications. 2N3506, 2N3506L, 2N3507, 2N3507L Features: High current and high speed capability Mechanical Specifications Metallization Bonding Pad Size Top Backside
Semicoa Semiconductors
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1506 chip type geometry 22KA

2N3506

Abstract: 2N3506J 2N3506 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · General purpose switching transistor · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3506J) · JANTX level (2N3506JX) · JANTXV level (2N3506JV) · JANS level (2N3506JS) · QCI to the applicable level · 100% die visual inspection , Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3506
Semicoa Semiconductors
Original
MIL-STD-750
Abstract: 2N3506 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N3506J) · JANTX level (2N3506JX) · JANTXV level (2N3506JV) · JANS level (2N3506JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3506 Silicon NPN Transistor Data Sheet Semicoa Semiconductors
Original

chip die npn transistor

Abstract: 2N3506 Silicon NPN Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 · JAN level (2N3506J) · JANTX level (2N3506JX) · JANTXV level (2N3506JV) · JANS level (2N3506JS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Applications · General , 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3506 Silicon NPN Transistor Data Sheet
Semicoa Semiconductors
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chip die npn transistor
Abstract: applications. (leaded) 2N3506 â'" 2N3507A U4 package (surface mount) 2N3506U4 â'" 2N3507AU4 MAXIMUM RATINGS Parameters / Test Conditions Symbol 2N3506L 2N3507L Unit Collector-Emitter Voltage , 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON , family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature low saturation , our website http://www.microsemi.com. FEATURES â'¢ JEDEC registered 2N3506 through 2N3507 Microsemi
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T4-LDS-0016-1
Abstract: 2N3506L 2N3507L 2N3506L 2N3507L 2N3506AL 2N3507AL h FE h FE h FE h FE h FE h FE V CE(sat) V CE(sat) V CE , 2N3506L thru 2N3507AL NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature low , ://www.microsemi.com. FEATURES · · · · · JEDEC registered 2N3506 through 2N3507 series. RoHS compliant versions , available in: TO-39 (TO-205-AD) package (leaded) 2N3506 ­ 2N3507A APPLICATIONS / BENEFITS · · General Microsemi
Original
Abstract: p semcofl ¿888888888 |M iwi B f i HBf m sssBP .f rHHHHHHHH h. M itittnnnnn h hhhhhk. > >itH -
OCR Scan
Abstract: 2N3506 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: â'¢ General purpose switching transistor â'¢ Low power â'¢ NPN silicon transistor â'¢ Screening and processing per MIL-PRF-19500 â'¢ JAN level (2N3506J) â'¢ JANTX level (2N3506JX) â'¢ JANTXV level (2N3506JV) â'¢ JANS level (2N3506JS) â'¢ QCI to the applicable level â'¢ 100% die visual , of 2 2N3506 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics Semicoa Semiconductors
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2N3506

Abstract: MOTOROLA SC -CDIODES/OPTO} ~ 3M DE | f c , 3 b ? 2 S S 0 0 3 ? 'ifl5 1 |~~ 6 3 6 7 2 5 5 MOTOROLA SC < DIODES/OPTO) 34C 37985 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) T - 3 5" D IE NO. - NPN LINE SO U R C E - DSL22 2C3506 Si T h is die provides perform ance similar to that of the following device types: 2N3506 2N3507 D esig ned for core driver applications. METALLIZATION - Top
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OCR Scan

2N3506

Abstract: General 5 ^ Sem iconductor » Industries, Inc. DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR These devices are designed fo r use in h ig h -c u rren t, high-speed, s aturated s w itc hing and core d river applic a tio n s. T h e latest technologies are used to o ffe r th e highest degree o f r e lia b ility . J A N , J A N T X , & J A N T X V to M IL -S -1 9 5 0 0 / 3 4 9 are available. 2N3506 2N3507 N PN S I L IC O N S W IT C H I N G T R A N SIST O R S FEATURES · Fast Switching · Low
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OCR Scan

2N3507U4

Abstract: and JANTXV U4 Package Also available in: TO-39 package (leaded) 2N3506 ­ 2N3507A Important , Characteristics table) 2N3506 A U4 (e3) RoHS Compliance e3 = RoHS compliant (available on commercial
Microsemi
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LDS-0016-2
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