2N3501L MIL-PRF-19500 2N3501LJ 2N3501LJX 2N3501LJV 2N3501LJS MIL-STD-750

Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: · General purpose ·

2N3501L 2N3501L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: · General purpose · Low power · NPN silicon transistor · Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E · JAN level (2N3501LJ 2N3501LJ) · JANTX level (2N3501LJX 2N3501LJX) · JANTXV level (2N3501LJV 2N3501LJV) · JANS level (2N3501LJS 2N3501LJS) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 MIL-STD-750 method 2072 for JANTXV and JANS · Radiation testing (total dose) upon request Features · · · · Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 5620 Reference document: MIL-PRF-19500/366 MIL-PRF-19500/366 Benefits · Qualification Levels: JAN, JANTX, JANTXV and JANS · Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 150 Collector-Base Voltage VCBO 150 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts IC 300 mA PT 1 5.71 RJA 175 W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Collector Current, Continuous O Power Dissipation, TA = 25 C Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright© 2004 Rev. H.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3501L 2N3501L Silicon NPN Transistor D a ta S h e e t ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions IC = 10 mA Min Typ Max Units Volts 150 Collector-Base Cutoff Current ICBO1 ICBO2 ICBO3 VCB = 150 Volts VCB = 75 Volts VCB = 75 Volts, TA = 150°C 10 50 50 Collector-Emitter Cutoff Current ICEO VCE = 120 Volts 1 µA nA µA µA Emitter-Base Cutoff Current IEBO1 IEBO2 VEB = 6 Volts VEB = 4 Volts 10 25 µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0% On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE7 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 1500 mA, VCE = 10 Volts IC = 300 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA Min 35 50 75 100 20 45 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 10 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 0.5 mA, f = 1 kHz, Rg = 1 k VCE = 10 Volts, IC = 0.5 mA, f = 10 kHz, Rg = 1 k Min Typ Max Units 300 0.8 1.2 0.2 0.4 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO NF1 Noise Figure NF2 Typ 1.5 8 75 375 8 pF 80 pF 16 dB 6 Switching Characteristics Saturated Turn-On Time tON Saturated Turn-Off Time tOFF Copyright© 2004 Rev. H.2 VEB = 5 Volts, IC = 150 mA, IB1 = 15 mA IC = 150 mA, IB1=IB2=15 mA 115 ns 1,150 ns Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2