Datasheet Search Results			1 - 50 of about 58 for 2N3501
	2N3501	Advanced Semiconductor, Inc.	Silicon Transistor Selection Guide	384.32 Kb,  5 Pages.
	2N3501	Bharat Electronics Ltd	Transistor Selection Guide	56.27 Kb,  1 Pages.
	2N3501	Boca Semiconductor	GENERAL PURPOSE TRANSISTOR (NPN SILICON) - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	166.8 Kb,  5 Pages.
	2N3501	Central Semiconductor	Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	58.37 Kb,  1 Pages.
	2N3501	Central Semiconductor	NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch	341.53 Kb,  3 Pages.
	2N3501	Central Semiconductor	NPN METAL CAN Transistors	341.53 Kb,  3 Pages.
	2N3501	Continental Device India Limited	Metal Can and Epoxy Transistors	377.21 Kb,  4 Pages.
	2N3501	Continental Device India Limited	Semiconductor Device Data Book 1996	90.29 Kb,  1 Pages.
	2N3501	Crimson Semiconductor	Transistor Selection Guide	1453.37 Kb,  36 Pages.
	2N3501	General Diode	Transistor Selection Guide	594.42 Kb,  10 Pages.
	2N3501	Micro Commercial Components	TRANS GP BJT NPN 150V 0.3A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	553.25 Kb,  2 Pages.
	2N3501	Microsemi Corporation	NPN Silicon Transistor	57.68 Kb,  2 Pages.
	2N3501	Microsemi Corporation	150 Volts 500mAmps NPN BIPOLAR TRANSISTOR - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	511.2 Kb,  2 Pages.
	2N3501	Motorola	European Master Selection Guide 1986	67.66 Kb,  2 Pages.
	2N3501	Motorola / Freescale Semiconductor	Power Transistor Selection Guide	317.49 Kb,  6 Pages.
	2N3501	New England Semiconductor	SMALL SIGNAL NPN TRANSISTOR	36.14 Kb,  1 Pages.
	2N3501	PPC Products Corporation	Transistor Short Form Data	241.38 Kb,  1 Pages.
	2N3501	Raytheon Company	Selection Guide 1977	46.68 Kb,  1 Pages.
	2N3501	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	10.56 Kb,  1 Pages.
	2N3501	Semicoa Semiconductor	General Purpose Medium Speed Amplifiers	82.81 Kb,  1 Pages.
	2N3501	Semicoa Semiconductor	Chip: 6.0V geometry 5620 polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	43.01 Kb,  2 Pages.
	2N3501	Semicoa Semiconductor	Chip Type 2C3501 Geometry 5620 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	30.61 Kb,  1 Pages.
	2N3501	Semiconductor Technology, Inc.	High Voltage Silicon Low and Medium Power Transistors	150.31 Kb,  1 Pages.
	2N3501	Semiconductor Technology, Inc.	High Voltage Silicon Low and Medium Power Transistors	150.32 Kb,  1 Pages.
	2N3501	N/A	Shortform Transistor Datasheet Guide	93.24 Kb,  1 Pages.
	2N3501	N/A	Shortform IC and Component Datasheets (Plus Cross Reference Data)	101.39 Kb,  1 Pages.
	2N3501	Motorola	Motorola Semiconductor Datasheet Library	340.28 Kb,  1 Pages.
	2N3501	N/A	Semiconductor Master Cross Reference Guide	111.51 Kb,  1 Pages.
	2N3501	N/A	Vintage Transistor Datasheets	54.72 Kb,  1 Pages.
	2N3501	National Semiconductor	Pro-Electron Transistor Datasheets	23.89 Kb,  1 Pages.
	2N3501CSM4	Semelab	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR	17.81 Kb,  3 Pages.
	2N3501DCSM	Semelab	Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications	22.39 Kb,  2 Pages.
	2N3501J	Semicoa Semiconductor	Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	203.57 Kb,  2 Pages.
	2N3501JAN	Motorola / Freescale Semiconductor	Bipolar Transistor, NPN Silicon Small Signal Transistor	388.92 Kb,  4 Pages.
	2N3501JAN	New England Semiconductor	NPN SILICON TRANSISTOR	57.68 Kb,  2 Pages.
	2N3501JANS	Motorola / Freescale Semiconductor	Bipolar Transistor, NPN Silicon Small Signal Transistor	388.92 Kb,  4 Pages.
	2N3501JANTXV	New England Semiconductor	NPN SILICON TRANSISTOR	57.68 Kb,  2 Pages.
	2N3501JS	Semicoa Semiconductor	Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	203.57 Kb,  2 Pages.
	2N3501JTX	Motorola / Freescale Semiconductor	Bipolar Transistor, NPN Silicon Small Signal Transistor	388.92 Kb,  4 Pages.
	2N3501JTXV	Motorola / Freescale Semiconductor	Bipolar Transistor, NPN Silicon Small Signal Transistor	388.92 Kb,  4 Pages.
	2N3501JV	Semicoa Semiconductor	Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	203.57 Kb,  2 Pages.
	2N3501JX	Semicoa Semiconductor	Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	203.57 Kb,  2 Pages.
	2N3501L	Micro Commercial Components	Bipolar Transistor, Collector-Base Voltage 150V NPN Transistor, TO-39 Package - Pol=NPN / Pkg=TO5 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	553.25 Kb,  2 Pages.
	2N3501L	Microsemi Corporation	NPN Silicon Transistor	57.68 Kb,  2 Pages.
	2N3501L	Semelab	Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	10.45 Kb,  1 Pages.
	2N3501L	Semicoa Semiconductor	Type 2N3501L Geometry 5620 Polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	43.01 Kb,  2 Pages.
	2N3501L	Semicoa Semiconductor	Chip: geometry 5620 polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=150 / Ic=0.3 / Hfe=100/300 / fT(Hz)=150M / Pwr(W)=1	30.62 Kb,  1 Pages.
	2N3501LJ	Semicoa Semiconductor	Package = TO-5 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	207.63 Kb,  2 Pages.
	2N3501LJANS	New England Semiconductor	NPN SILICON TRANSISTOR	57.68 Kb,  2 Pages.
	2N3501LJS	Semicoa Semiconductor	Package = TO-5 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20	207.63 Kb,  2 Pages.
	Datasheets per page:  50 | 250 | 500

Fulltext Datasheet Results		1 - 50 of about 75 for 2N3501
	First line: 2n3500 2n3498 2n3501 JANTX Qualified MIL-PRF-19500/366 Devices 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L Qualified Level JANTX JANTXV JANS Abstract: .. 2N3501 2N3501L. JAN JANTX JANTXV JANS. MAXIMUM RATINGS. Ratings. Symbol 2N3498 2N3498 * 2N3499 2N3499 * 2N3500 2N3500 * 2N3501 * Unit. Collector-Emitter Voltage VCEO 100 150 Vdc. Collector-Base Voltage VCBO 100 150 Vdc ..  Tags: 2n3498 2n3500 2N3501 JANTX  2N3501 DATA SHEET  2N3501  2N35*  2N3499   2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L 2N3501 2N3501L	57.68 Kb	2 Pages	Original
	First line: Boca Semiconductor Corp. (BSC) Rating Symbol Value Unit Collector-Emitter Voltage VCEO Collector-Base Voltage vcbo Emitter-Base Voltage vebo Collector Current Continuous mAdc Total Device Dissipation Derate above 5.71 Watt mW/'C Total Device Dissipation Derate above 28.6 Watts mwre Abstract: .. 175 Â �c/w Thermal Resistance, Junction to Case Rejc 35 Â �C/W 2N3500 2N3500 2N3501* CASE 79-04, STYLE 1 TO-39 TO-39 TO-205AD TO-205AD 2 1 GENERAL PURPOSE TRANSISTORS NPN SILICON *2N3501 is a Motorola designated preferred ..  Tags:   datasheet abstract..	185.35 Kb	5 Pages	OCR Scan
	First line: Small Signal Transistor CP195 Amp/Switch Transistor Chip Abstract: .. PRINCIPAL DEVICE TYPES 2N5682 2N5682 2N3501. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R1 15 -November 2001 Process EPITAXIAL PLANAR. Die Size 30 x 30 MILS. Die Thickness 7.0 MILS. Base Bonding Pad ..  Tags: transistor  ny transistor   CP195	58.37 Kb	1 Pages	Original
	First line: 2n3498 2N3499 2N3501UB RADIATION HARDENED SILICON SWITCHING TRANSISTOR Qualified MIL-PRF-19500/366 Abstract: .. 2N3498 2N3498 2N3499 2N3499 2N3500 2N3500 2N3501 JANSM – 3K Rads Si 2N3498L 2N3498L 2N3499L 2N3499L 2N3500L 2N3500L 2N3501L JANSD – 10K Rads Si 2N3501UB JANSP – 30K Rads Si JANSL – 50K Rads Si JANSR – 100K 100K Rads Si ABSOLUTE MAXIMUM RATINGS ..  Tags: 2n3498 2N3501UB  2N3499   LDS-0056	102.32 Kb	3 Pages	Original
	First line: Data Sheet 2C3501 Chip Type 2C3501 Geometry 5620 Polarity Generic Packaged Parts: 2N3498, 2N3499, 2N3500, 2N3501 Chip type 2C3501 Semicoa Semiconductors provides performance similar these devices. Abstract: .. 2N3498 2N3498 , 2N3499 2N3499 , 2N3500 2N3500 , 2N3501. Chip type 2C3501 2C3501 by Semicoa Semi-conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N3498 2N3498 , 2N3498L 2N3498L , 2N3499 2N3499 , 2N3499L 2N3499L ..  Tags: 2N3499   2N3498 2N3499 2N3500 2N3501	30.62 Kb	1 Pages	Original
	First line: Small Signal Transistor Amp/Switch Transistor Chip CP195 Abstract: .. PRINCIPAL DEVICE TYPES 2N5682 2N5682 2N3501. GEOMETRY. PROCESS DETAILS. BACKSIDE COLLECTOR. R2 1 -August 2002 Process EPITAXIAL PLANAR. Die Size 30 x 30 MILS. Die Thickness 7.0 MILS. Base Bonding Pad Area ..  Tags:   CP195	194.34 Kb	2 Pages	Original
	First line: 2n3500 2n3498 SILICON PLANAR TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR RF TRANSISTORS 2N3498 2N3498 , 2N3499 2N3499 , 2N3500 2N3500 , 2N3501. TO-39 TO-39 . Metal Can Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION ..  Tags: 2n3498 2n3500   2N3498 2N3499 2N3500 2N3501	248.04 Kb	5 Pages	Original
	First line: 2n3498 SILICON PLANAR TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Package Abstract: .. NPN SILICON PLANAR RF TRANSISTORS 2N3498 2N3498 , 2N3499 2N3499 , 2N3500 2N3500 , 2N3501. TO-39 TO-39 . Metal Can Package. ABSOLUTE MAXIMUM RATINGS Ta=25oC 25oC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION ..  Tags: 2n3498 TO-39 CASE  2N3501  2N3499   2N3498 2N3499 2N3500 2N3501	187.13 Kb	5 Pages	Original
	First line: 2n3498 2n3501 JANTX documentation process conversion measures necessary comply with this document shall completed November 2010. INCH-POUND MIL-PRF-19500/366N August 2010 SUPERSEDING MIL-PRF-19500/366M October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLI Abstract: .. , 2N3499 2N3499 , 2N3499L 2N3499L , 2N3499U4 2N3499U4 , 2N3500 2N3500 , 2N3500L 2N3500L , 2N3500U4 2N3500U4 , 2N3501, 2N3501L, 2N3501UB, AND 2N3501U4, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG ..  Tags: 2n3501 JANTX 2n3498   2N3498 2N3498L 2N3498U4 2N3499 2N3499L 2N3499U4 2N3500 2N3500L 2N3500U4 2N3501 2N3501L 2N3501UB 2N3501U4	504.54 Kb	36 Pages	Original
	First line: 2N3501 BIPOLAR TRANSISTOR Volts 500mAmps TO-39 Package SYMBOL VCEO VCBO VEBO MAX. 5.71 28.6 +200 +200 Watts Abstract: .. 2N3501. 150 Volts 500mAmps 500mAmps . Features • Meets MIL-S-19500 MIL-S-19500 /366 • Collector-Base Voltage 150V 150V • Collector Current: 500 mA • Fast Switching 1265 nS. RATING SYMBOL MAX. UNIT. Collector-Emitter Voltage ..  Tags: 2N3501   2N3501	503.95 Kb	2 Pages	Original
	First line: 2N3501 Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: Fast Switching 1265 Abstract: .. 2N3501. 150 Volts 500mAmps 500mAmps . Features • Meets MIL-S-19500 MIL-S-19500 /366 • Collector-Base Voltage 150V 150V • Collector Current: 500 mA • Fast Switching 1265 nS. RATING SYMBOL MAX. UNIT. Collector-Emitter Voltage ..  Tags:   2N3501	553.25 Kb	2 Pages	Original
	First line: 2N3501 Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: Fast Switching 1265 Abstract: .. 2N3501. 150 Volts 500mAmps 500mAmps . Features • Meets MIL-S-19500 MIL-S-19500 /366 • Collector-Base Voltage 150V 150V • Collector Current: 500 mA • Fast Switching 1265 nS. RATING SYMBOL MAX. UNIT. Collector-Emitter Voltage ..  Tags: 2N3501   2N3501	511.19 Kb	2 Pages	Original
	First line: 2n3501 JANTX 2N2222A motorola 2N2484 motorola CV8616 2N3440 MOTOROLA METAL SMALL-SIGNAL TRANSISTORS (continued) Choppers Devices listed decreasing V(qr)ebo- Package Device V(BR)EBO V(BR)ECO hFE(inv) Offset Voltage vEC(ofs) (mV) On-State Resistance rec(on) (il) TO-46 2N2946 2N2946A 2N5230 2N5231 2N29 Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: 2N3440 MOTOROLA CV8616 2N2484 motorola 2N2222A motorola 2n3501 JANTX   datasheet abstract..	44.76 Kb	1 Pages	OCR Scan
	First line: 2N3501 Dimensions (inches). Abstract: .. 2N3501. Bipolar NPN Device. VCEO = 150V 150V IC = 0.3A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ..  Tags: 2N3501 JANTX  2N3501   2N3501	10.56 Kb	1 Pages	Original
	First line: 2n3501 JANTX 2N3501 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N3501J) JANTX level (2N3501JX) JANTXV level (2N3501JV) JANS level (2N3501JS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) u Abstract: .. 2N3501 Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E. • JAN level 2N3501J • JANTX level 2N3501JX ..  Tags: 2N3501 JANTX  2N3501   2N3501 2N3501J 2N3501JX 2N3501JV 2N3501JS	203.57 Kb	2 Pages	Original
	First line: 2N3501 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N3501J) JANTX level (2N3501JX) JANTXV level (2N3501JV) JANS level (2N3501JS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) upon request Abstract: .. 2N3501 Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 MIL-PRF-19500 Appendix E. • JAN level 2N3501J • JANTX level 2N3501JX ..  Tags:   2N3501 2N3501J 2N3501JX 2N3501JV 2N3501JS	56.84 Kb	2 Pages	Original
	First line: 2N3501 MECHANICAL DATA Dimensions (inches) Abstract: .. 2N3501. VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage IB = 0 VEBO Emitter – Base Voltage IB = 0 IC Collector Current. PD Total Device Dissipation TA = 25 �C. PD Derate above 25 �C. Tstg ..  Tags:   2N3501	20.85 Kb	3 Pages	Original
	First line: 2n3495 2N3501 MOTOROLA 2N5229 2N2368 METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each package type. V(BR Abstract: .. 30 1.0 30 6 110 30 BSW68A BSW68A 150 2000 30 500 1.0 500 150 — — 2N3114 2N3114 150 200 30 30 1.0 50 5.0 40 30 2N3501* 150 300 100 150 0.4 150 15 150 20 Exists under CECC BSW67A BSW67A 120 2000 30 500 1.0 500 150 — — 2 N5682 N5682 120 ..  Tags: 2N2368 2N5229 2N3501 MOTOROLA 2n3495   datasheet abstract..	86.15 Kb	2 Pages	OCR Scan
	First line: SOLID STATE DEVICES, SFTX3501-3X-16Q 14849 Firestone Boulevard Mirada.CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 TRIPLE UNCOMMITTED 300mA Volt TRANSISTOR Designer's Data Sheet FEATURES: Eutectic Attach, Hermetic Package Electrical performance similar 2N3501 package QU^^^^^^^^ CHARACTE Abstract: .. : Eutectic Die Attach, Hermetic Package Electrical performance similar to 3 X 2N3501 in one package 16 PIN QU^^^^^^^^ MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Collector-Emitter Voltage ..  Tags:   datasheet abstract..	196.92 Kb	2 Pages	OCR Scan
	First line: 2n3497 2n3495 BSW68A METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each package type. V(BR)CEO (sat) Devic Abstract: .. 30 1.0 30 6 110 30 BSW68A BSW68A 150 2000 30 500 1.0 500 150 — — 2N3114 2N3114 150 200 30 30 1.0 50 5.0 40 30 2N3501* 150 300 100 150 0.4 150 15 150 20 Exists under CECC BSW67A BSW67A 120 2000 30 500 1.0 500 150 — — 2 N5682 N5682 120 ..  Tags: BSW68A 2n3495 2n3497   datasheet abstract..	60.81 Kb	1 Pages	OCR Scan
	First line: LCC3 weight 2N3501CSM4 MECHANICAL DATA Dimensions (inches) HIGH VOLTAGE, MEDIUM POWER, TRANSISTOR HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE HIGH RELIABILITY APPLICATIONS Abstract: .. Hermetically sealed surface mount version of the popular 2N3501 for high reliability / space applications requiring small size and low weight devices. VCBO Collector ‐ Base Voltage VCEO Collector ..  Tags: LCC3 weight  2N3501   2N3501CSM4	17.81 Kb	3 Pages	Original
	First line: 2N3016 PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST DEVICE CASE EAKDOV OLTAGE Min. Max. VOLTA ax.) 2N2991 TO-5 0.05 2N2992 TO-5 0.05 2N2993 TO-5 0.05 2N2994 TO-5 0.05 2N3016 TO-5 0.75 2N3017 TO-5 0.75 2N3018 TO-61/1 0.75 Abstract: .. 100 10 5 5 30 90 5 0.1 0.3 2 2N3500 2N3500 TO-5 150 150 6 10 0.15 40 120 0.15 0.015 0.4 1 2N3501 TO-5 150 150 6 10 0.15 100 300 0.15 0.015 0.4 1 2N3583 2N3583 TO-66 TO-66 250 175 6 10 0.75 40 200 0.75 0.125 5 1 2N3584 2N3584 TO-66 TO-66 375 250 6 2 ..  Tags: 2N3016   datasheet abstract..	259.9 Kb	1 Pages	OCR Scan
	First line: 2N2243 2N2440 TO-39 Metal-Can Transistors (NPN) Electrical Characteristics Unless Otherwise Specified) Type VCBO ^CEO ^EBO 'cm 'cBO 'ces Freq (UA) 0(V) (MA) (mA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N2243 0.01 0.35 Abstract: .. 10 0.2 0.8 10 8 150 20 25 1 10 0.25 0.9 50 35 10 10 0.4 1.2 150 40 120 150 10 15 300 10 15 500 10 2N3501 150 150 6 1 0.3 0.05 75 35 0.1 10 0.4 1.2 150 8 150 20 50 1 10 0.2 0.8 10 100 300 150 10 0.25 0.9 50 20 300 10 75 10 10 20 ..  Tags: 2N2440 2N2243   datasheet abstract..	108.78 Kb	1 Pages	OCR Scan
	First line: 2N2222A motorola 2N2484 motorola CV8616* transistor motorola 2n3053 METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers These transistors designed amplifier applications, general-purpose switching applications, complementary circuitry. Devices listed decreasing order V(br)CEO withi Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: transistor motorola 2n3053 CV8616* 2N2484 motorola 2N2222A motorola   datasheet abstract..	83.38 Kb	2 Pages	OCR Scan
	First line: CV8616* 2N2904 transistor 2N2904A METAL SMALL-SIGNAL TRANSISTORS (continued) General-Purpose Amplifiers (continued) v(BR)CEO Device Volts Comments Package Type TO-18 N3963 0.01 N4026 1000 2N4029 1000 Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: 2N2904A 2N2904 transistor CV8616*   datasheet abstract..	86.67 Kb	2 Pages	OCR Scan
	First line: bc107 transistor 2N2222A JANTX BSS52 METAL SMALL-SIGNAL TRANSISTORS (continued) Darlington Transistors These transistors characterized very high gain input impedance applications. Devices monolithic construction. V(BR) (sat) Device Volts Volts Package Type TO-18 MM6427 5000 TO-39 BSS52 1000 2000 100 Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: BSS52 2N2222A JANTX bc107 transistor   datasheet abstract..	92.46 Kb	2 Pages	OCR Scan
	First line: 2N3444 TO-39 Case (Continued) type description vcbo vceo VeBO 'cbo vcbo vce(sa <=ob (HA) <ma) (mA) (MHz) (pf) (ns) (ns) (dB) *vcer *'ceo "Ices "*'cev 2n3444 CORE DRIVER 0.50 1.20 1,000 2n3467 CORE DRIVER 0.10 0.30 2n3468 CORE DRIVER 0.10 0.35 2n3494 AMPUSWITCH 0.10 0.30 Abstract: .. 2n3501 NPN HIGH VOLTAGE 150 150 6.0 0.05 75 100 300 150 10 0.40 150 150 8.0 .. .. .. 2n3502 2n3502 PNP AMPL/SWITCH 45 45 5.0 0.01" 30 100 300 150 10 0.40 150 200 8.0 .. .. .. 2n3503 2n3503 PNP AMPL/SWITCH ..  Tags: 2N3444   datasheet abstract..	81.84 Kb	1 Pages	OCR Scan
	First line: 2N3439 MOTOROLA Metal Small-Signal Transistors Motorola Small-Signal Metal Transistors designed General-Purpose Amplifiers, High-Speed Switches, High-Voltage Amplifiers, Low-Level/ Low-Noise Amplifiers, High-Frequency Oscillators, Choppers, Darlingtons. These devices manufactured variety packages, i Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: 2N3439 MOTOROLA   datasheet abstract..	104.5 Kb	2 Pages	OCR Scan
	First line: transistor 2N3725 2N3501 JANTX 2N3019A* 2N3019A 2N5682 ENGLAND SEMICONDUCTOR SMALL SIGNAL TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VCEO (sus) VOLTS (max) AMPS min/max mA/V ^CE(sat) @IC/IB mA/mA (MHz) TO-5 T0205AD 2N697 40/120@ 150/10 1.5@150/15 2N1711 100/300@150/10 1.5@150/15 2N1613A 40/12 Abstract: .. 2N3019 2N3019 " 2N3020 2N3020 TO-39 TO-39 2N3053A 2N3053A 2N3114 2N3114 2N3300 2N3300 2N349S 2N349S " 2N3499 2N3499 " 2N3500 2N3500 " 2N3501" 2N3724 2N3724 2N3725 2N3725 2NS6S1 2NS682 2NS682 . Ie max AMPS 0.8 1.0 O.S. h FE @Ic/VCE. sus VOLTS 40h 50 h. minImax @mAIV 40/120@150/10 100 ..  Tags: 2N5682 2N3019A 2N3019A* 2N3501 JANTX transistor 2N3725   datasheet abstract..	54.64 Kb	1 Pages	OCR Scan
	First line: 2N3444 TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 0.50 0.10 0.10 0.10 0.10 0.50 0.50 0.50 0.50 0.01** 0.01** ---0.10 0.10 0.10 1.20 0.10 0.50 0.50 0.10 0.10 -0.50 0.50 -0.20 0.20 0.30 -----20* 1.00*** 1.00*** 0.01 -2.00** 2.00** ---100 -----28 --120 --200 1500 1500 1,00 Abstract: .. 2N3501 NPN HIGH VOLTAGE 150 150 6.0 0.50 75 100 300 150 10 0.40 150 150 8.0 - - - - - - 2N3502 2N3502 PNP AMPL/SWITCH 45 45 5.0 0.01* 30 100 300 150 10 0.40 150 200 8.0 - - - - - - 2N3503 2N3503 PNP AMPL/SWITCH 60 60 5 ..  Tags: 2N3444   2N3444 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502 2N3503 2N3506 2N3507 2N3554 2N3634 2N3635 2N3637 2N3660 2N3661 2N3665 2N3666 2N3671 2N3678 2N3719 2N3720 2N3722	82.27 Kb	1 Pages	Original
	First line: Metal Small-Signal Transistors Motorola Small-Signal Metal Transistors designed General-Purpose Amplifiers, High-Speed Switches, High-Voltage Amplifiers, Low-Level/ Low-Noise Amplifiers, High-Frequency Oscillators, Choppers, Darlingtons. These devices manufactured variety packages, i.e., TO-18, TO-3 Abstract: .. 30 1.0 30 6 110 30 BSW68A BSW68A 150 2000 30 500 1.0 500 150 — — 2N3114 2N3114 150 200 30 30 1.0 50 5.0 40 30 2N3501* 150 300 100 150 0.4 150 15 150 20 Exists under CECC BSW67A BSW67A 120 2000 30 500 1.0 500 150 — — 2 N5682 N5682 120 ..  Tags:   datasheet abstract..	120.54 Kb	2 Pages	OCR Scan
	First line: METAL SMALL-SIGNAL TRANSISTORS (continued) High-Voltage/High-Current Amplifiers (continued) following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices listed decreasing order V(br)qeq within each package type. V(BR)CEO (sat) Device Volts Volts Comment Abstract: .. 30 1.0 30 6 110 30 BSW68A BSW68A 150 2000 30 500 1.0 500 150 — — 2N3114 2N3114 150 200 30 30 1.0 50 5.0 40 30 2N3501* 150 300 100 150 0.4 150 15 150 20 Exists under CECC BSW67A BSW67A 120 2000 30 500 1.0 500 150 — — 2 N5682 N5682 120 ..  Tags:   datasheet abstract..	102.72 Kb	2 Pages	OCR Scan
	First line: 2N3680* 2N2979DCSM* 2N3809 T072* QGOQMBb 02e) SMLB BI-POLAR TRANSISTORS (CECC HIGH REL) HIGH ENERGY Typs Number Code Package Vceo (cont) Vce/lc 2N3501 T039 100-300 10/0.15 150M 2N3506 T039 -200 2/1.5 2N3507 T039 2/1.5 2N3508 T046 -160 l/10m 500M 2N3509 T0A6 100-200 l/10m 500M 2N3511 T052 15min 1/lm Abstract: .. & HIGH ENERGY Typs Number Rei Code Pol Package Vceo le cont Hfe @ Vce/lc fr Pd 2N3501 HR NPN T039 T039 150 0.3 100-300 10/0.15 150M 150M 5 2N3506 2N3506 HE NPN T039 T039 60 3 A0- -200 2/1.5 60M 1 2N3507 2N3507 HR NPN T039 T039 80 3 30- ■ ..  Tags: T072* 2N3809 2N2979DCSM* 2N3680*   datasheet abstract..	198.85 Kb	2 Pages	OCR Scan
	First line: CV8616 Metal Small-Signal Transistors Motorola Small-Signal Metal Transistors designed General-Purpose Amplifiers, High-Speed Switches, High-Voltage Amplifiers, Low-Level/ Low-Noise Amplifiers, High-Frequency Oscillators, Choppers, Darlingtons. These devices manufactured variety packages, i.e., TO-1 Abstract: .. 2N1613 2N1613 CECC 2N2369 2N2369 CECC 2N3440 2N3440 CECC 2N1711 2N1711 CECC 2N2369A 2N2369A CECC 2N3501 CECC 2N1893 2N1893 CECC 2N2484 2N2484 CECC 2N4033 2N4033 CECC 2N2218 2N2218 CECC 2N2894 2N2894 CECC 2N5415 2N5415 CECC 2N2218A 2N2218A CECC 2N2904 2N2904 ..  Tags: CV8616   datasheet abstract..	146.39 Kb	3 Pages	OCR Scan
	First line: SEMICONDUCTOR TECHNOLOGY fll3bWSfl ODODS1? SEMICONDUCTOR TECHNOLOGY, INC. r_if_0/ HIGH VOLTAGE SILICON MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 (407) 283-4500 510-953-7b' NPN&PNP 407-286-8514 Power Dissipation (watts) vCBO (volts) VCER (volts) <CBO hFE< VCE(SAT.) Vbe(SAT. CASE Type P Abstract: .. .90 1.3 200 200 10 10 50 50 50 10 10 10 30 30 30 30 15 T0-5 T0-5 TO-5 TO-5 T0-5 2N3440 2N3440 2N3500 2N3500 2N3501 2N3589 2N3589 2N3590 2N3590 NPN NPN NPN NPN NPN 1.0 1.0 1.0 2.0 2.0 350 150 150 200 200 350 150 150 200 200 300 75 75 110 110 ..  Tags:   datasheet abstract..	168.82 Kb	1 Pages	OCR Scan
	First line: 2N3444 TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (µA) *ICEO **ICES ***ICEV ****ICER 0.50 0.10 0.10 0.10 0.10 0.50 0.50 0.50 0.50 0.01** 0.01** ---0.10 0.10 1.20 0.10 0.50 0.50 0.10 0.10 -0.50 0.50 -0.20 0.20 0.30 -----20* 1.00*** 1.00*** 0.01 -2.00** 2.00** ---100 -----28 --120 --200 1500 150 Abstract: .. 2N3501 NPN HIGH VOLTAGE 150 150 6.0 0.50 75 100 300 150 10 0.40 150 150 8.0 - - - - - -. 2N3502 2N3502 PNP AMPL/SWITCH 45 45 5.0 0.01* 30 100 300 150 10 0.40 150 200 8.0 - - - - - -. 2N3503 2N3503 PNP AMPL/SWITCH 60 60 5.0 0.01 ..  Tags: 2N4001  2N3923  2n3762  2N3735  2N3734  2N3666  2N3495*  2n3467  2n3444   2N3444 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502 2N3503 2N3506 2N3507 2N3554 2N3634 2N3635 2N3660 2N3661 2N3665 2N3666 2N3671 2N3678 2N3719 2N3720 2N3722	20.25 Kb	1 Pages	Original
	First line: BEL BF200 BEL100N VCEO VCBO Vebo Plot ICBO (Sat) Device Volts Volts Votls bias Volts Volts Package /max SWITCHING TRANSISTORS 2N2218 40/120 toff nsec 285max 2218A 40/120 2219 100/300 Abstract: .. 05 .4 150 49. 2N3501 150 150 6 100/300 150 10 300 1000 .05 .4 150 50. 2N3501TV 115 185 5 20min 20min . 30 20 50 600 .05 — 120 51. BD 115 180 245 5 22min 22min . 50 100 200 800 .05 — 120 52. 2N657 2N657 100 100 8 30/90 200 10 500 800 ..  Tags: BEL100N BEL BF200   datasheet abstract..	162.01 Kb	1 Pages	OCR Scan
	First line: CDIL BD139 C5198 bd139 smd 2N2907A smt bd140 SMD equivalent Transistors Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors Worldwide Reach Product Profile Transistors Product Range Abstract: .. 2N3501 2N3502 2N3502 2N3503 2N3503 2N3635 2N3635 2N3636 2N3636 2N3637 2N3637 2N3678 2N3678 2N3724 2N3724 2N3725 2N3725 2N3742 2N3742 2N4030 2N4030 ..  Tags: bd140 SMD equivalent 2N2907A smt bd139 smd C5198 CDIL BD139   datasheet abstract..	724.82 Kb	4 Pages	Original
	First line: BT2222 BT2222A Discrete Devices Beam Lead Chips Transistor Chips 100% Probed Parameters (Partial List) Mech. Outline Owg. Function Polarity Type Similar bvcbo bvceo bvebo VcE(Sat) Ic/lb Ident. Type Volts Volts Volts Min/Max Volts mA/mA Code1 Level BT929 2N929 40/120 0.01 0.35 1/0.1 Amplifier BT930 2 Abstract: .. RJ NPN BT3227 BT3227 2N3227 2N3227 40 20 6 100/300 10 0.5 100/10 500 1 RJ High-Voltage NPN BT3501 BT3501 2N3501 140 140 6 100/300 150 0.5 150/15 100 2 RF Switches PNP BT 3835 2N3635 2N3635 140 140 6 100/300 150 0.5 150115 100 2 SF Core ..  Tags: BT2222A BT2222   datasheet abstract..	65.17 Kb	1 Pages	OCR Scan
	First line: CONTINENTAL DEVICE INDIA 23033=14 OOQOOab CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type vcbo VcEO VEBO <CBO VCE(Sat)& "ces 'off NFOFreq (MA) (mA) (mA) (MA) (PF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10 Abstract: .. .25 0.90 50 35 10.000 10.0 0.40 1.20 150 40 120 150.000 10.0 15 300.000 10.0 15 500.000 10.0 2N3501 150 150 6 0.050 75 35 0.100 10.0 0.40 1.20 150 8 150 20 50 1.000 10.0 0.20 0.80 10 100 300 150.000 10.0 0 ..  Tags:   datasheet abstract..	404.56 Kb	5 Pages	OCR Scan
	First line: 2n22a* CENTRAL SEMICONDUCTOR fl'T^b3 ODDDai? 1969963 CENTRAL SEMICONDUCTOR_61C 00217 T'3^'0! METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VcE(s) 'CBO CASE 2N3302 TO-18 2N3326 TO-5 2N3388 TO-5 2N3418 .100 TO-5 2N3419 .100 TO-5 Abstract: .. 05 150 TO-5 2N3501 150 150 6 100 300 .150 10 .4 15 150 150 80 .05 150 TO-5 2N3665 2N3665 120 80 10 40 120 150 10 .5 15 150 60 12 .05 60 TO-5 2N3666 2N3666 120 80 10 100 300 150 10 .5 15 150 60 12 .05 60 TO-5 2 N3678 N3678 75 55 6 40 120 150 ..  Tags: 2n22a*   datasheet abstract..	360.44 Kb	3 Pages	OCR Scan
	First line: CENTRAL SEMICONDUCTOR fl'T^b3 ODDDai? 1969963 CENTRAL SEMICONDUCTOR_61C 00217 T'3^'0! METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VcE(s) 'CBO CASE 2n3302 to-18 2n3326 to-5 2n3388 to-5 2n3418 .100 to-5 2n3419 .100 to-5 Abstract: .. 05 150 to-5 2n3501 150 150 6 100 300 .150 10 .4 15 150 150 80 .05 150 to-5 2n3665 2n3665 120 80 10 40 120 150 10 .5 15 150 60 12 .05 60 to-5 2n3666 2n3666 120 80 10 100 300 150 10 .5 15 150 60 12 .05 60 to-5 2 n3678 n3678 75 55 6 40 120 150 ..  Tags:   datasheet abstract..	360.43 Kb	3 Pages	OCR Scan
	First line: MM4003 Metal Small-Signal Transistors Motorola Small-Signal Metal Transistors designed General-Purpose Amplifiers, High-Speed Switches, High-Voltage Amplifiers, Low-Level/ Low-Noise Amplifiers, High-Frequency Oscillators, Choppers, Darlingtons. These devices manufactured variety packages, i.e., TO-1 Abstract: .. .0 30 6 110 30 BSW68A BSW68A 150 2000 30 500 1.0 500 150 — — 2N3114 2N3114 150 200 30 30 1.0 50 5.0 40 30 2N3501* 150 300 100 150 0.4 150 15 150 20 Exists under CECC BSW67A BSW67A 120 2000 30 500 1.0 500 150 — — 2 N5682 N5682 120 1000 40 250 ..  Tags: MM4003   datasheet abstract..	162.43 Kb	3 Pages	OCR Scan
	First line: BT2222A* BT2222A Transistors (Cont.) Discrete Devices Ultra High-Speed Logic Switches Type Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat) lC/lB tOFF Min/Max Volts mA/mA 2N706 20/- 10/1 TO-18 2N706A 20/60 10/1 TO-18 2N706B 20/60 10/1 TO-18 Abstract: .. NPN BT3227 BT3227 2N3227 2N3227 40 20 6 100/300 10 0.5 100/10 500 1 RJ High-Voltage NPN BT3501 BT3501 2N3501 140 140 6 100/300 150 0.5 150/15 100 2 RF Switches PNP BT 3835 2N3635 2N3635 140 140 6 100/300 150 0.5 150115 100 2 SF Core ..  Tags: BT2222A BT2222A*   datasheet abstract..	95.96 Kb	2 Pages	OCR Scan
	First line: 2N22 BT2222A BT2222* Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. RJ NPN BT3227 BT3227 2N3227 2N3227 40 20 6 100/300 10 0.5 100/10 500 1 RJ High-Voltage NPN BT3501 BT3501 2N3501 140 140 6 100/300 150 0.5 150/15 100 2 RF Switches PNP BT 3835 2N3635 2N3635 140 140 6 100/300 150 0.5 150115 100 2 SF Core ..  Tags: BT2222* BT2222A 2N22   datasheet abstract..	110.38 Kb	2 Pages	OCR Scan
	First line: 8134693 1.13 DDDQ133 ~D\ GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS (Cont'd) Maximum Ratings Electrical Characteristics Type Ambient Volts Volts Volts VcE(Sat) Ic/lB Case Min/Max Volts mA/mA 2N3498 2N3499 2N2201 2N2008 2N3923 1000 1000 2000 40/120 100/300 30/90 40/120 30/120 150/15 150/15 200/40 25/5 2 Abstract: .. 5 150 150 50 40 50 12 12 60 15 3.5 TO-5 TO-5 F-8 TO-5 TO-5 2N3712 2N3712 2N3114 2N3114 2K4925 2K4925 2N3500 2N3500 2N3501 1000 800 1000 1000 1000 150 150 150 150 150 150 150 150 150 150 5 5 5 6 6 30/150 30/120 40/200 40/120 100/300 30 ..  Tags: 2N2201   datasheet abstract..	192.22 Kb	1 Pages	OCR Scan
	First line: Transistors (Cont.) Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts hfe@ VCE(Sat) tOFF Min/Max Volts mA/mA 2N3134 100/300 150/15 TO-39 2N3135 40/120 150/15 TO-18 2N3136 100/300 150/15 TO-18 Abstract: .. NPN BT3227 BT3227 2N3227 2N3227 40 20 6 100/300 10 0.5 100/10 500 1 RJ High-Voltage NPN BT3501 BT3501 2N3501 140 140 6 100/300 150 0.5 150/15 100 2 RF Switches PNP BT 3835 2N3635 2N3635 140 140 6 100/300 150 0.5 150115 100 2 SF Core ..  Tags:   datasheet abstract..	100.9 Kb	2 Pages	OCR Scan
	First line: 2N2440 BSY52 bc140 transistor 2n2270 2n1840 TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Type VCBO vceo Vebo (Sal) (Sal) 'ces Freq (ma) (nriA) (mA) (MA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10.0 0.50 1.30 2N3742 0.200 3.000 10. Abstract: .. .25 0.90 50 35 10.000 10.0 0.40 1.20 150 40 120 150.000 10.0 15 300.000 10.0 15 500.000 10.0 2N3501 150 150 6 0.050 75 35 0.100 10.0 0.40 1.20 150 8 150 20 50 1.000 10.0 0.20 0.80 10 100 300 150.000 10.0 0 ..  Tags: 2n1840 transistor 2n2270 bc140 BSY52 2N2440   datasheet abstract..	306.82 Kb	6 Pages	OCR Scan
	First line: jan 2n5582 military,ic 2N2484 motorola MIL-QUALIFIED Motorola 2N3792 MOTOROLA MOTOROLA (XSTRS/R b3b7S54 00^0857 MIL-QUALIFIED PRODUCTS Motorola qualified components ordered adding suffix JAN, JTX, JTXV JANS part numbers indicated following tables. Although Motorola will continue supply components sp Abstract: .. 0.5 50 4 2N3440 2N3440 250 1000 40/160 20 0.5 50 4 2N3500 2N3500 " 150 300 40/120 150 0.4 150 15 2N3501" 150 300 100/300 150 0.4 150 15 2N3498 2N3498 " 100 500 40/120 150 0.6 300 30 2N3499 2N3499 " 100 500 100/300 150 0.6 300 30 PNP TO-205AD TO-205AD ..  Tags: 2N3792 MOTOROLA MIL-QUALIFIED Motorola 2N2484 motorola military,ic jan 2n5582   datasheet abstract..	336.14 Kb	6 Pages	OCR Scan
	First line: ujt 2N6027 mj15003 equivalent power transistor 2n3055 MJE13003 transistor 2N4033 Page Small Signal Transistors Bipolar Power Transistors. Programmable Small Signal MOSFET Junction FETs. Switching Diodes Schottky Diodes Leakage Diodes Ultra Leakage (Pico Amp) Diodes Zener Diodes. Monolithic Isolated Abstract: .. CP195 CP195 2N3501 150 150 6.0 50 75 100 300 10 150 0.4 150 8.0 150 – – CP191V CP191V 2N2222A 2N2222A 75 40 6.0 10 60 100 300 10 150 1.0 500 8.0 300 4.0 285. CP225 CP225 2N2221A 2N2221A 75 40 6.0 10 60 40 120 10 150 0.3 150 8.0 250 – 285. CP192V CP192V 2N3904 2N3904 ..  Tags: transistor 2N4033 power transistor 2n3055 mj15003 equivalent ujt 2N6027  tip41c tip42c  RF Bipolar Transistor 2N35*  RF 2N3866  quad 2n3019  pnp for 2n3019  MPS751  MPS455  MJE15030  mje13009  MJE13003   datasheet abstract..	371.72 Kb	10 Pages	Original
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Specsheet Results
	2N3501	N/A	Medium Power, High Voltage, General Purpo	Specification
	2N3501CSM4	N/A	Medium Power, High Voltage, General Purpo	Specification
	2N3501DCSM	N/A	Dual	Specification
	2N3501J	N/A	Si NPN Power HF BJT	Specification
	2N3501+JAN	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501+JANS	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501+JANTX	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501+JANTXV	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501L	N/A	Medium Power, High Voltage, General Purpo	Specification
	2N3501L+JAN	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501L+JANS	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501L+JANTX	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501L+JANTXV	Defense Supply Center Columbus	Si NPN Power HF BJT	Specification
	2N3501S	N/A	Medium Power, High Voltage, General Purpo	Specification
	2N3501TV	N/A	Si NPN Power HF BJT	Specification

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