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2N341 Datasheet

Part Manufacturer Description PDF Type
2N341 Advanced Semiconductor Silicon Transistor Scan
2N341 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N341 Motorola Motorola Semiconductor Datasheet Library Scan
2N341 N/A Transistor Shortform Datasheet & Cross References Scan
2N341 N/A Shortform Transistor PDF Datasheet Scan
2N341 N/A GE Transistor Specifications Scan
2N341 N/A Transistor Replacements Scan
2N341 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N341 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N341 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N341 N/A Semiconductor Master Cross Reference Guide Scan
2N341 N/A Shortform Transistor Datasheet Guide Scan
2N341 N/A Vintage Transistor Datasheets Scan
2N341 Semitronics Silicon Power Transistors Scan
2N3410 Motorola Motorola Semiconductor Datasheet Library Scan
2N3410 N/A Transistor Shortform Datasheet & Cross References Scan
2N3410 N/A Shortform Transistor PDF Datasheet Scan
2N3410 N/A Shortform Transistor PDF Datasheet Scan
2N3410 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N3410 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

2N341

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N341 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. class="hl">2N341 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS , Transistors Buy 2N341 at our online store! 2N341 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N341 Information Did you Know. AMS is a , Quote Test Houses 2N341 Specifications Military/High-Rel : N V(BR)CEO (V) : 85 V(BR)CBO (V) : 125 I American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: st c o n d itio n « m in 0 0 m ax 1 250 2N340 m in m ax 1 2S0 2N341 m in m ox 1 250 2N342 m in m ax 1 , » 30 db Vce = 67.5 v; le = 10 ma Ri = 4 k iî; f = 1 kt 2N341 30 db V, = 0.2 v -
OCR Scan
2N339 2N343
Abstract: MIL-S-19500/31C AMENDMENT 1 4 October 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N341 This amendment forms a part of Military Specification MIL-S-19500/31C, dated 1 June 1972, and is approved for use by all Departments and Agencies of the Department of Defense. t\ _ a if age u TABLE II, Subgroup 3, Shock test: Under details, delete "1500 G, .5 ms" and substitute "'500 G, 1.0 ms". Custodians: Preparing activity: Army - EL Navy - EC Navy - EC Air Force - 17 -
OCR Scan
Abstract: 2N341+JAN Transistors Si PNP Power BJT Military/High-RelY V(BR)CEO (V)85 V(BR)CBO (V)125 I(C) Max. (A)60m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)8.0 @I(C) (A) (Test Condition)20m @I(B) (A) (Test Condition)3.0m h(FE) Min. Current gain.20Ã' h(FE) Max. Current gain. @I(C) (A) (Test Condition)40m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original
Abstract: UNITRODE JAN, JANTX, & JANTXV 2N3418-2N3421 E L E C T R IC A L S P E C IF IC A T IO N S (at 25 , (1.) 2N3418, 2N3420 2N3419, 2N3421 Collector-Em itter Cutoff Current 2N3418, 2N3420 2N3419, 2N3421 Collector-Em itter Cutoff Current 2N3418, 2N3420 2N3419, 2N3421 Em itter-Base Cutoff Current Em itter-Base Cutoff Current D.C. Current Gain (1.) 2N3418, 2N3419 2N3420, 2N3421 D.C. Current Gain (1.) 2N3418, 2N3419 2N3420, 2N3421 D.C. Current Gain (1.) 2N3418, 2N3419 2N3420, 2N 3421 D.C. Current G ain (1.) 2N3418 -
OCR Scan
MIL-S-19500/393
Abstract: SPECIFICATIONS 64 nm _ UNITRODE JAN, JANTX, & JANTXV 2N3418-2N3421 ELECTRICAL SPECIFICATIONS (at 25Â , Breakdown Voltage (1.) BVCEO A-2 3011 lc = 50mAdc, Cond. D 2N3418, 2N3420 60 _ Vdc 2N3419, 2N3421 , Current 'ceo A-2 3041 Cond. D 2N3418, 2N3420 â'" 5.0 /iAdc VCE = 45Vdc 2N3419, 2N3421 â'" 5.0 , -3 3076 lc = lOOmAdc, VCE = 2Vdc 2N3418, 2N3419 20 â'" â'" 2N3420, 2N3421 40 â'" D.C. Current Gain (1.) hfE A-3 3076 lc = IAdc, VCE = 2Vdc 2N3418, 2N3419 20 60 â'" 2N3420, 2N3421 40 120 â -
OCR Scan
JANTXV2N3418 Unitrode transistors data To5 N3421 A23041 2N3421 JANTX 200-C 861-654D
Abstract: 2N315 2N340 2N401 2N456B 2N492A 2N264 2N315A 2N341 2N402 2N4 57 2N492B 2N2 65 2N316 2N342 2N403 2N457A -
OCR Scan
2N384 2N388 2N441 2N301 2N489A 2N491 2N458 2n448 2N404 transistor 2N456A 2N235 2N280 2N327A 2N381 2N414A 2N466
Abstract: 2N341 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)85 V(BR)CBO (V)125 I(C) Max. (A)60m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150Ãu I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)8.0 @I(C) (A) (Test Condition)20m @I(B) (A) (Test Condition)3.0m h(FE) Min. Current gain.20Ã' h(FE) Max. Current gain. @I(C) (A) (Test Condition)40m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test American Microsemiconductor
Original
Abstract: plane. 4. Drill Angle. * FIGURE 2. Gage for lead and tab location for transistor type 2N341. 3 , MIL-S-19500 '31C 1 June 1972 SUPERSEDING MIL-S-19500/31B 21 January 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER TYPE 2N341 This specification is approved for use by all Departments and Agencies of the Department of Defense." 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a NPN, silicon, low-power transistor. 1.2 Physical dimensions. See -
OCR Scan
2N3413 A1u marking a1u marking 6 a1u transistor MIL-S-1950U transistor c 3206
Abstract: 2N341 30 db -vw. iti 100 SI ì_fi â'¢Mat« JEDEC njlit.r«! Ma Gp«-I0 log 15« f7»' RL \V. POWER -
OCR Scan
2N139 IA171 ScansUX7 1963-REVISED 2N34I 2NS43
Abstract: IUNIT JAN, JANTX, & JANTXV 2N3418 JAN, JANTX, & JANTXV 2N3419 JAN, JANTX, & JANTXV 2N3420 JAN , â'"65°C to + 200°C . MECHANICAL SPECIFICATIO NS JAN, JANTX, & JANTXV 2N3418-2N3421 Z , 2N3418-2N3421 SYMBOL TEST Visual and Mechanical- â  - Collector-Emitter Breakdown Voltage (1.) 2N3418, 2N3420 2N3419, 2N3421 Collector-Emitter Cutoff Current 2N3418, 2N3420 2N3419, 2N3421 Collector-Emitter Cutoff Current 2N3418, 2N3420 2N3419, 2N3421 Emitter-Base Cutoff Current Emitter-Base Cutoff -
OCR Scan
2n3411 DG1SM77 1003C T347T T-33-07
Abstract: 5 5 6 7 20 30 T05 T05 T05 T05 2N339 2N340 2N341 2N342 NPN NPN NPN NPN 1.00 1.00 1.00 1.00 .020 .020 -
OCR Scan
2N3638 2N3643 2N3568 2N3569 2N2406 2N702 2N2539 2N3565 2N329A 2N332 2N333 2N334 2N335 2N336
Abstract: .010 .010 5 5 5 5 6 7 20 30 T05 T05 T05 T05 2N339 2N340 2N341 2N342 NPN NPN NPN NPN 1.00 1.00 1.00 -
OCR Scan
2N3644 2N3645 2N1506 2N1069 2N1389 2N3566 2N2405A 2N337 2N338 2N478 2N479 2N479A 2N480
Abstract: /GE 2N339 Texas Instr 2N339A Semicoa 2N340 Texas Instr 2N340A CSR Indus 2N341 Texas Instr 2N341A 2N342 Space Power Electronics
Original
BC337-10 2n185 BC3 csr 2N326 Delco BC337-16-5 BC337-16-18 2N2523 MPS929 MPS930 BC485 BC485-18 BC485-5
Abstract: Texas Instr 2N338A GnrlElec/GE 2N339 Texas Instr 2N339A Semicoa 2N340 Texas Instr 2N340A CSR Indus 2N341 Texas Instr 2N341A 2N342 Texas Instr 2N342A Texas Instr 2N342B 2N343 CSR Indus 2N343A Semitronics 2N343B Short Form Catalog
Original
2N344 2n261 rca 2N301G 2N277 2n257 2N244 diode s2m 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545
Abstract: jomitronicr semiconductors Semitronics Corp. silicon transistors cont'd discrete devices silicon power transistors Type Polarity Power Dissipation @ 25°C (Watts) tj bvcbo CC) (volts) BVce-(volts) il fe @ ic vce (sat ) @ lc (Min.) (Max.) (Amps) (volts) (Amps) fâ'" (MHz) Case Style 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2N389 2N389A 2N424 2N424A , 0.15 â'" 175 a) TO-5 2N3416 NPN 1.0 (C) 100 85 60 (0) 20 60 1.0 0.25 1.0 â'" 40 (T) TO-5 2N3419 NPN -
OCR Scan
2N1018 2N1620 2N3916 2N3920 2N4244 2N4245 2n1478 2N2204 2N2202 2N1899 2N497 2N498 2N298A 2NS45 2N546 2N547
Abstract: 2N3253 2N3418 2N3419 PNP NPN NPN NPN NPN 1.0 1.0 1.0 1.0 1.0 (A) (A) A) ici 200 200 200 100 100 50 60 75 , 2N339A 2N340 2N340A 2N341 NPN NPN NPN NPN NPN 1.0 (Ç) 3.0 (A) 1.0 (0 3.0) (A)-1.0 (C) 150 200 150 200 , ) 0.9 (B) 10 â 10 (T) (T) TO-11 TO-U TO-11 TO-11 TO-II 2N341A 2N342 2N342A 2N343 2N343A NPN NPN NPN -
OCR Scan
Transistors 2n551 2N1904 2N5068 Heat Sink to-39 2N2995 2N2203 T0-53 2N497A 2N498A 2NS47 2N548 2N549
Abstract: jomitronicr semiconductors Semitronics Corp. silicon transistors cont'd discrete devices silicon power transistors Type Polarity Power Dissipation @ 25°C (Watts) tj bvcbo CC) (volts) BVce-(volts) il fe @ ic vce (sat ) @ lc (Min.) (Max.) (Amps) (volts) (Amps) fâ'" (MHz) Case Style 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2N389 2N389A 2N424 2N424A , 0.15 â'" 175 a) TO-5 2N3416 NPN 1.0 (C) 100 85 60 (0) 20 60 1.0 0.25 1.0 â'" 40 (T) TO-5 2N3419 NPN -
OCR Scan
2N551 2NS404 2N2951 2NA14 2N2196 2n1467 2NS48 2N550 2N562 2N656 2N656A
Abstract: Dissipation @ 25°C (Watts) NOTE 1 2N3SB 2N3S8A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N943A 2K388 , 2N3144 2N3145 2N3149 2N3150 2N3151 2N3244 2N3245 2N3252 2N3253 2N3418 2N3419 2N3420 2N3421 2N3441 2N3442 -
OCR Scan
2N2004 2N648 2N1079 to-53 2n4307 2N29SA 2N2860 2N941 2N942 2N943 2N944 2N945 2N946
Abstract: -17, 2N696-697-717-734-735-1420. CV8602, OC123. CV8599. CV10041. CV9300. CV9872 , . 2N34-109-403, AC124-128-132-152. 2N34-109-403, AC124-128-132-152. 2N34-109-403, AC124-128-132-152. OC58, 2N34-105-402. OC58, 2N105-217-402. OC58, 2N105-217-402. OC74-318, 2SA219, AC105-117-122-125-151-153. OC74 , . 2N29-35-98-99-117-118-119-120-160-170. OC72-308-604S, NKT214, , 2S32, AC117-122-125-151 153 , , , AC122-125-128-162. OC70-303-602, NKT224, 2N189-226-381-408, 2SB219, AC122-125-128-162. OC71 -
OCR Scan
AC127 2SB415 ad142 ac128 HJ17D CV7089 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C
Abstract: /GE 2N339 Texas Instr 2N339A Semicoa 2N340 Texas Instr 2N340A CSR Indus 2N341 Texas Instr 2N341A 2N342 -
OCR Scan
2n3642 BC138 2N3567 bc136 2N3641 BC268 150MH T0-105 250MH
Abstract: 2N340 2N340A 2N341 2N34U 2N342 2N342A 2N342B NS58 NS58 NS58 NS58 NS58 NS58 NS58 NS58 NS58 NS58 NS58 , ,2N3438.CD010011.CDQ10015,C D Q 10045 2N339»2N340# 2N340A,2N34 3,2N343B,2N735,2N956 2N341,CDQ10012,COQ10013 2N340,C0Q10013 2N341,C0010013,C0Q10034 2N342A,2N342B -
OCR Scan
2N2856 7182N 2N567 n4877 2N1252 2N1506A 2N1715 2N1721 2N1725 2N1890
Abstract: Texas Instr 2N338A GnrlElec/GE 2N339 Texas Instr 2N339A Semicoa 2N340 Texas Instr 2N340A CSR Indus 2N341 -
OCR Scan
ST25C transistor transistor 2N4 TFK 808 2N407 transistor GE2 TRANSISTOR 2N1177
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