2N3055 P003F - Datasheet Archive

SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN

2N3055 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CER Collector-Emitter Voltage (R BE = 100) 70 V V CEO Collector-Emitter Voltage (I B = 0) 60 V V EBO Emitter-Base Voltage (I C = 0) IC IB o P tot Total Dissipation at T c 25 C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature V A 7 Base Current 7 15 Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 2N3055 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Test Conditions I CEO Collector Cut-off Current (I B = 0) V CE = 30 V I EBO Emitter Cut-off Current (I C = 0) 1 5 V EB = 7 V V CEO(sus) Collector-Emitter Sustaining Voltage I C = 200 mA V CER(sus) Collector-Emitter Sustaining Voltage I C = 200 mA o T j = 150 C V CE(sat) V BE Base-Emitter Voltage IC = 4 A DC Current Gain IC IC IC IC IC IC V CE V CE V CE V CE VCE V CE = = = = = = 4 4 4 4 4 4 V V V V V V I C = 0.5 A VCE = 4 V 1 3 4 5 6 7 20 35 60 120 20 5 Transition frequency IC = 1 A Second Breakdown Collector Current V CE = 40 V Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % V V 1.5 Group Group Group Group V CE = 4 V I s/b 2/4 V V CE = 4 V h FE fT mA V I B = 400 mA I B = 3.3 A h FE1 /h FE1 DC Current Gain mA 70 R BE = 100 IC = 4 A I C = 10 A 0.5 A 0.5 A 0.5 A 0.5 A 4A 10 A mA mA 60 Collector-Emitter Saturation Voltage = = = = = = Unit 5 V CE = 100 V V CE = 100 V Typ. Max. 0.7 Collector Cut-off Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F P003F 3/4 2N3055 2N3055 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4