500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
OMAP1611 Texas Instruments Applications Processor visit Texas Instruments
OMAP1610 Texas Instruments Applications Processor visit Texas Instruments
OMAP310 Texas Instruments Applications Processor visit Texas Instruments
XOMAP3503CCUS Texas Instruments Applications Processor 423-FCBGA visit Texas Instruments
XOMAP3515CCUS Texas Instruments Applications Processor 423-FCBGA visit Texas Instruments
STELLARIS-3P-ZHAW-INESPTP-PGRT Texas Instruments InES PTP v2 application visit Texas Instruments

2N3055 typical applications

Catalog Datasheet MFG & Type PDF Document Tags

RCA-2N3055

Abstract: rca 2n3055 variety of madium-voltage, high-current applications. Typical applications tor this transistor include , (A) Fig. 1 - Power dissipation vs. temperature derating curve fo r 2N3055. Fig . 2 - Typical , Typical c o lle cto r-to -e m itte r saturation voltage characteristics to r type 2N3055. Fig. 4 - Typical base-to-em itter saturation voltage as a fun ctio n o f co lle cto r current fo r type 2N3055 , ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699
-
OCR Scan
RCA-2N3055 KCS-27516 rca 2n3055 2n3055 voltage regulator 2N3055 typical applications 2N3055 curve 2N3055 series voltage regulator TQ-204AA/TO-3

rca 2n3055

Abstract: SN3055 DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor Intended for a wide variety of medium-voltage, high-current applications. Typical applications for this transistor include power-switching circuits, audio , . Fig. 2 - Typical dc-bela characteristics lor 2N3055. Ol DE |3fl7SDûÃ" 0D17354 b J" 0 1E 17354 D , _ 2N3055 0 01 0 03 0 1 0 3 1 3 10 COLLECTOR CURRENT lc (A) Fig. 3 - Typical collector-to-emitter , Power Transistors _._ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly
-
OCR Scan
SN3055 2N3055 RCA 2n3055 collector characteristic curve power transistor 2n3055 RCA 2N3055 transistor 2N3055 transistor 92CS-27516

2N3055 power amplifier circuit

Abstract: 2n3055 applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY , ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handling
ON Semiconductor
Original
2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 MJ2955 mj2955 transistor 204AA 2N3055/D

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0
Motorola
Original
2N3055 MOTOROLA MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055/MJ2955 pin out TRANSISTOR 2n3055

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , , IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , ) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 µs 250 µs 2N3055, MJ2955
ON Semiconductor
Original
2N3055 power circuit 2n3055 equal 2N3055 JAPAN DC variable power with 2n3055 MJ2955 mexico 2N3055-1

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise
ON Semiconductor
Original
MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2N3055 equivalent transistor NUMBER

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , may occur and reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package , Industries, LLC, 2005 1 May 5, 2005 - Rev. 5 Publication Order Number: 2N3055/D 2N3055(NPN
ON Semiconductor
Original
2n3055 pin out diagram NPN Transistor 2N3055

2N3055

Abstract: 2n3055 motorola MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 , switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , overall value. © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0
Motorola
Original
2N3055-D 2n3055 pnp hfe 2n3055

2n3055

Abstract: 2N3055G 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , -204AA 100 Units / Tray MJ2955G 0 Package 2N3055 20 TO-204AA (Pb-Free) 100 Units / Tray , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 There are
ON Semiconductor
Original
pnp transistor 2N3055 2N30

2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 , . ORDERING INFORMATION Package Shipping 2N3055 TO-204AA 100 Units / Tray 2N3055G TO , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC
ON Semiconductor
Original
OF transistor 2n3055 to-3 package 2N3055H

2N3055 power amplifier circuit

Abstract: 2n3055 motorola . "Typical" param eters can and do vary in different applications. All operating param eters, including , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · · · , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. (2N3055) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15
-
OCR Scan
TRANSISTOR 2n3055 TRANSISTOR MJ2955 J2955

2n3055 motorola

Abstract: L 3055 motorola incidental damages. `Typical "parameters can and do vary indifferent applications. All operating parameters , Silicon Pow er Transistors . . . designed for general-purpose switching and amplifier applications. · · · , recommended choices tor future use and best overall value. © Motorola, Inc. 1995 (M) MOTOROLA 2N3055 , id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR
-
OCR Scan
L 3055 motorola motorola 2n3055 motorola power transistor 2N3055 J 2N3055

M8149

Abstract: 2N4355 DC TO DC COHVERTER TRANSFORMERS APPLICATIONS: · Portable Radiation M onitors · Infra-Red D etectors · O p-A m p Pow er Supplies · DC Isolation · G eodetic-O ceanographic-M edical Equipm ent · M , 2N3054 2N3055 1.25DX.75H-0.140Cl Hole .875D x .531H Molded Toroid P.C. MoldedToroid B E , 15 15 2000 2000 20k 20k 2N3055 2N3055 1.25DX.75H- 0.140 Cl Hole 1.25D x .75H- , . TYPICAL DC-DC CONVERTER TRANSFORMER CIRCUITS .1 SCHEMATIC 1 SCHEMATIC 2 SCHEMATIC 3 SCHEMATIC 4 T
-
OCR Scan
M8149 M8050 M8072 M8121 2N1305 2N414 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit m8050 transformer 2N670 M8073 M8074

westinghouse transistors

Abstract: Westinghouse Semiconductor POüJEREX IN C TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This , regulator applications. The temperature range to 200*C permits reliable operation in high ambients, and , Westinghouse JEDEC-type silicon power semiconductors, the 2N3055 carries the Westinghouse Lifetime Guarantee
-
OCR Scan
westinghouse transistors Westinghouse Semiconductor C/2116/DB C/2117

2N3055 transistor equivalent to220

Abstract: 12v 10A car battery charger wiring diagram used as a post-regulator in many different applications covering up to 5A maximum current. An , voltage. Figure 1. L4955 Typical Application. µP PG INH VIN IN 1 CL 4 OUT , automotive applications. Min dropout is: Vbe1 + Vbe2 + Vcesat3. Able to reduce the dropout to values lower , element is close to saturation. This causes efficiency problems in applications supplied with batteries , , sets the requested current limiting threshold to a typical value given by : Ilim = 4/24 39.69
STMicroelectronics
Original
2N3055 transistor equivalent to220 12v 10A car battery charger wiring diagram 2N3055 equivalent mosfet 2N3055 pin out connections smd transistor 2N3055 2N3055 transistor equivalent AN932

smd transistor 2N3055

Abstract: TRANSISTOR 2n3055 used as a post-regulator in many different applications covering up to 5A maximum current. An , voltage. Figure 1. L4955 Typical Application. µP INH VIN IN PG 3 1 CL 4 OUT , automotive applications. Min dropout is: Vbe1 + Vbe2 + Vcesat3. Able to reduce the dropout to values lower , element is close to saturation. This causes efficiency problems in applications supplied with batteries , requested current limiting threshold to a typical value given by : Ilim = 4/24 39.69 [A] RCL
STMicroelectronics
Original
2n3055 use in battery charger 2N3055 CHARGER schematic diagram 12v car battery charger wiring diagram 2N3055 equivalent equivalent transistor 2n3055 1004CL

12v 10A car battery charger wiring diagram

Abstract: 2N3055 CHARGER schematic diagram used as a post-regulator in many different applications covering up to 5A maximum current. An , voltage. Figure 1. L4955 Typical Application. µP INH VIN IN PG 3 1 CL 4 OUT , automotive applications. Min dropout is: Vbe1 + Vbe2 + Vcesat3. Able to reduce the dropout to values lower , element is close to saturation. This causes efficiency problems in applications supplied with batteries , requested current limiting threshold to a typical value given by : Ilim = 4/20 39.69 [A] with
STMicroelectronics
Original
2N3055 diagram with power supply pin configuration transistor 2n3055 NPN Transistor 2N3055 darlington 2N3055 12V 2N3055 TO-220 smd 2n3055 D97IN610A

uA723PC

Abstract: 2n3055 motorola ­14 Figure 2. Typical Circuit Connection (7 < VO < 37) 12 11 RSC 10 2 Vin Figure 3. Typical , IC DEVICE DATA 12k 4 6 5 VO VO = +15Vdc IL = 2Adc max 2N3055 or Equiv Rev 5 , Figure 16. Typical Connection for 2 < VO < 7 10 12 +Vin RSC 12 11 MC1723C R1 R3 4 , Negative Regulator 0.33 11 10 11 10 12 2N3055 or Equiv 12 1000pF 7 Figure 20 , Figure 17. Foldback Connection Vout = ­15 V 2N3055 or Equiv 5 MC1723C Figure 22. +12V, 1.0 A
Motorola
Original
MC1723CP uA723PC lm723cn ic lm723cn 2n3055 uA723pc circuit Application Notes 2n3055 Amplifier MC1723C/D MC1723CD LM723CN A723PC MC1723

LM723

Abstract: 2n3055 motorola ­14 Figure 2. Typical Circuit Connection (7 < VO < 37) 12 11 RSC 10 2 Vin Figure 3. Typical , IC DEVICE DATA 12k 4 6 5 VO VO = +15Vdc IL = 2Adc max 2N3055 or Equiv Rev 5 , Figure 16. Typical Connection for 2 < VO < 7 10 12 +Vin RSC 12 11 MC1723C R1 R3 4 , Negative Regulator 0.33 11 10 11 10 12 2N3055 or Equiv 12 1000pF 7 Figure 20 , Figure 17. Foldback Connection Vout = ­15 V 2N3055 or Equiv 5 MC1723C Figure 22. +12V, 1.0 A
Motorola
Original
LM723 2N3055* motorola ic lm723CN LM723CN MOTOROLA mc1723cp regulator mc1723C ic

2N3055 equivalent transistor NUMBER

Abstract: Y2w TRANSISTOR applications as linear and rotary actuator drivers, stepper motor drivers, servo motor drivers, power supplies , ±11V) from an op amp and boosts them to ± 30V to drive power transistors, (e.g. 2N3055 (NPN) and 2N3789 (PNP , WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR USE. NOTE AS typical values have been , THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR USE. NOTE: AS typical values , . INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR USE. NOTE- AM typical
-
OCR Scan
ICL8063 Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 transistor Y2W ICL8063 circuit diagram ICL8063 equivalent T-19-23 ICHB510/8520/8530
Showing first 20 results.