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2N3055 silicon

Catalog Datasheet MFG & Type PDF Document Tags

2n3055

Abstract: hfe 2n3055 Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 20­70 @ IC = 4 Adc , www.jmnic.com 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , =10V 2.5 MHz Is/b fT 2 70 Product Specification www.jmnic.com 2N3055 Silicon NPN , Product Specification www.jmnic.com 2N3055 Silicon NPN Power Transistors 4 JMnic
JMnic
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hfe 2n3055 2N3055 silicon 2n3055 amplifier 2n3055 pin 2n3055 IC 2N3055 specification

2N3055

Abstract: 2n3055 pin SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20­70 @ IC = 4 Adc , Product Specification 2N3055 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless , Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N3055 SavantIC Semiconductor Product Specification 2N3055 Silicon NPN Power
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2n3055 datasheet 2n3055 complement J 2N3055 t 2N3055 2n3055 25 2N3055 equivalent
Abstract: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , 1.1 3.0 UNISONIC TECHNOLOGIES CO. LTD V 1 UTC 2N3055 SILICON NPN TRANSISTOR Unisonic Technologies
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2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER
Unisonic Technologies
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2N3055 NPN Transistor 2N3055 transistor equivalent NPN Transistor 2N3055 2n3055 transistor Transistor 2n3055 2n3055 npn power transistor

2N3055

Abstract: 2N3055 NPN Transistor UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , TECHNOLOGIES CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN TRANSISTOR PARAMETER SYMBOL
Unisonic Technologies
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power transistor 2n3055 2N3055 power circuit 2N3055 series voltage regulator
Abstract: UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM , V mA mA mA 70 1.1 3.0 CO. LTD V 1 QW-R205-003,A UTC 2N3055 SILICON NPN -
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2n3055 sgs

Abstract: 2n3055 SCS-THOMSON dD©oeilLIiêîi®iQ©i 2N3055 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol , June 1997 1/2 77 2N3055 THERMAL DATA Rthj case Thermal Resistance Junction-case Max 1.5 JC/W
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2n3055 sgs sgs 2n3055 2N3055 schematic diagram TRANSISTOR L 287 A data transistor 2n3055 internal schematic diagram for 2n3055

rca 2n3055

Abstract: SN3055 DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor Intended for a wide variety of medium-voltage , Power Transistors _._ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly , CHARACTERISTICS, At Case Temperature (Tc) = 25°C Unlet! Otherwlie Specllled 2N3055 CHARACTERISTIC TEST , .J t COLLECTOR CURRENT lc (A) Fig. 1 - Power dissipation vs. temperature derating curve lor 2N3055. Fig. 2 - Typical dc-bela characteristics lor 2N3055. Ol DE |3fl7SDûÃ" 0D17354 b J" 0 1E 17354 D
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RCA-2N3055 SN3055 rca 2n3055 2n3055 voltage regulator 2N3055 RCA 2n3055 collector characteristic curve 92CS-27516

RCA-2N3055

Abstract: rca 2n3055 operating area TERMINAL DESIGNATIONS The RCA-2N3055 silicon n-p-n transistor intended for a wide , ~ T -3 3 -/3 General-Purpose Power Transistors_ 2N3055 File Number 1699 , General-Purpose Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS, At Case Temperature , (A) Fig. 1 - Power dissipation vs. temperature derating curve fo r 2N3055. Fig . 2 - Typical dc-beta characteristics (o r 2N3055. DE | 3 A 7 S D Û l ' D D 1 7 3 5 4 b 3875081 G E
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KCS-27516 2N3055 typical applications 2N3055 curve 2n3055 RCA data RCA 2N3055 transistor transistors 2n3055 rca2n3055 TQ-204AA/TO-3

2N3055

Abstract: 2n3055 malaysia 2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power , 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA R thj -ca se , I CEV Min . V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 TO-3 (H , P003N 3/4 2N3055 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
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2n3055 malaysia 2N3055 TO-3 datasheet of ic 555 2N305 2n3055 circuit diagram 2N3055 power amplifier circuit

2n3055 transistor

Abstract: 2N3055 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended , Collector Current A 115 W -65 to 200 o C 200 o C 1/4 2N3055 THERMAL DATA , Current (V BE = -1.5V) Min. V 50 75 145 250 70 1.6 2.5 MHz 2.87 A 2N3055 , 1.193 A P C O N B V E G U D R P003F 3/4 2N3055
STMicroelectronics
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transistor 1547 b 2N3055 JAPAN 2n3055 circuit

2n3055 malaysia

Abstract: 2N3055 NPN Transistor 2N3055 SILICON NPN TRANSISTOR . STM PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended tor power , Junction T em perature V CEO V ebo lc Ib Plot Tstg Tj °c °c 1/4 June 1998 2N3055 , 2/4 2N3055 TO-3 MECHANICAL DATA mm DIM. MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 , 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 inch P003F 3/4 2N3055 Information
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2N3055 ST 2N3055 MEXICO transistor B 892 value of 2n3055 ST 2N3055

2n3055 malaysia

Abstract: 2N3055 schematic diagram 2N3055 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO
STMicroelectronics
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BUY69A

2n3055 collector characteristic curve

Abstract: 2N3055 curve Power Transistors T-33- 1 3 File Number 2N3055 1699 HARRIS SEMICOND SECTOR 27E D , ) < 1.1 V, @ ic= 4 A, I b=0.4 A E xcellent sale operating area TERMINAL DESIGNATIONS The 2N3055 silicon n-p-n ^ra nsistor intended fo r a w ide variety'of medium^voltage, hig h -cu rre n t applications , Transistors 4 HHAS T~33-'3 ELECTRICAL CHARACTERISTICS, A t Case Tem perature (T c ) " \ 2N3055 , . 2-29 Power Transistors b HAS 2N3055 T ~ 3 S V3 BE(sal) C 4302271 OOl^ö
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M302271

2n3055

Abstract: 2N3055 NPN Transistor 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalâ'purpose switching and amplifier applications , '¢ Collectorâ'Emitter Saturation Voltage â' â'¢ â'¢ 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS , 0 Package 2N3055 20 TOâ'204AA (Pbâ'Free) 100 Units / Tray TC, CASE TEMPERATURE , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Ã Ã Ã Ã Ã Ã
ON Semiconductor
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2N3055 power amplifier circuit diagram 2n3055 application note 2N3055/D

2N3055 power amplifier circuit

Abstract: 2n3055 Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ , Registration. (2N3055) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2
ON Semiconductor
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2n3055 application 2N3055 MJ2955 mj2955 transistor pin out TRANSISTOR 2n3055 MJ2955 mexico 2N3055-1

2N3055

Abstract: DC variable power with 2n3055 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Junction Temperature Range TJ, Tstg ­ 65 to + 200 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , reliability may be affected. 160 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO , © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. 4 Publication Order Number: 2N3055
ON Semiconductor
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DC variable power with 2n3055 2n3055h mj2955 safe operating area Mj2955 power transistor OF transistor 2n3055 to-3 package MJ2955 2n3055 200 watts amplifier diagram

2N3055

Abstract: 2n3055 malaysia 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , types voltage and current values are negative. 2/4 1 3 V V 1.8 V 70 2N3055
STMicroelectronics
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pnp transistor 2N3055 complementary npn-pnp complementary npn-pnp power transistors 2n3055 pnp

2N3055L-T30-Y

Abstract: UNISONIC TECHNOLOGIES CO., LTD 2N3055 NPN SILICON TRANSISTOR SILICON NPN TRANSISTORS  DESCRIPTION The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power , of 3 QW-R205-003.B 2N3055 NPN SILICON TRANSISTOR UTC assumes no responsibility for , www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R205-003.B 2N3055  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( TA=25ï'°C ,unless otherwise specified ) PARAMETERS
Unisonic Technologies
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2N3055L-T30-Y

2N3055 power amplifier circuit

Abstract: 2N3055 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation , Semiconductor isc Silicon NPN Power Transistors 2N3055 ELECTRICAL CHARACTERISTICS TC=25 unless , Websitewww.iscsemi.cn 2 MAX UNIT 70 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Websitewww.iscsemi.cn 3 2N3055 INCHANGE Semiconductor
INCHANGE Semiconductor
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isc 2n3055 transistor isc MJ2955 transistor equivalent transistor 2n3055 2n3055 IC data sheet
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